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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

High Dose Rate Irradiations of Enduray Vision System for Nuclear Inspections

Higher radiation-hardened video cameras are needed in the operation and remote handling of equipment in nuclear reactor inspection and refueling applications. Vega Wave Systems, Inc. has developed a radiation-hardened vision system for nuclear energy applications. This vision system has been developed under several small business innovative research programs (SBIRs) from the U.S. Department of Energy, and the previous GAIN voucher program at Argonne National Laboratory (ANL) was successful in demonstrating that a prototype of the camera is radiation-hard up to at least 525 kGy (5.25 × 106 rad, Si equivalent) at dose rates of 10 kGy/hr with no measurable degradation in image quality and no measurable radiation-induced noise (RIN). Vega Wave Systems has developed a new version of the camera with more than 3X the resolution using a new design and new components, and this new design requires radiation-hardness qualification for marketplace acceptance. The program described in this report provided high radiation-hardness testing of this redesigned high-resolution vision system using the Argonne Low-Energy Accelerator Facility (LEAF). This report presents the results of irradiation tests performed on Vega Wave System’s redesigned high resolution vision system at a dose rate of 9.3 kGy/hr and up to total doses of 1823 kGy. This was an accumulation of 197 hours of irradiation. The results were excellent, providing proof of the redesigned high-resolution vision system’s immunity to high levels of radiation.

42 ENGINEERING↗
NASA NTRS2021

Systems Engineering and Assurance Modeling (SEAM): A Web-Based Solution for Integrated Mission Assurance

We present an overview of the Systems Engineering and Assurance Modeling (SEAM) platform, a web-browser-based tool which is designed to help engineers evaluate the radiation vulnerabilities and develop an assurance approach for electronic parts in space systems. The SEAM framework consists of three interconnected modeling tools, a SysML compatible system description tool, a Goal Structuring Notation (GSN) visual argument tool, and Bayesian Net and Fault Tree extraction and export tools. The SysML and GSN sections also have a coverage check application that ensures that every radiation fault identified on the SysML side is also addressed in the assurance case in GSN. The SEAM platform works on space systems of any degree of radiation hardness but is especially helpful for assessing radiation performance in systems with commercial-off-the-shelf (COTS) electronic components.

SEAM↗
NASA NTRS2007

Miniature L-Band Radar Transceiver

A miniature L-band transceiver that operates at a carrier frequency of 1.25 GHz has been developed as part of a generic radar electronics module (REM) that would constitute one unit in an array of many identical units in a very-large-aperture phased-array antenna. NASA and the Department of Defense are considering the deployment of such antennas in outer space; the underlying principles of operation, and some of those of design, also are applicable on Earth. The large dimensions of the antennas make it advantageous to distribute radio-frequency electronic circuitry into elements of the arrays. The design of the REM is intended to implement the distribution. The design also reflects a requirement to minimize the size and weight of the circuitry in order to minimize the weight of any such antenna. Other requirements include making the transceiver robust and radiation-hard and minimizing power demand. Figure 1 depicts the functional blocks of the REM, including the L-band transceiver. The key functions of the REM include signal generation, frequency translation, amplification, detection, handling of data, and radar control and timing. An arbitrary-waveform generator that includes logic circuitry and a digital-to-analog converter (DAC) generates a linear-frequency-modulation chirp waveform. A frequency synthesizer produces local-oscillator signals used for frequency conversion and clock signals for the arbitrary-waveform generator, for a digitizer [that is, an analog-to-digital converter (ADC)], and for a control and timing unit. Digital functions include command, timing, telemetry, filtering, and high-rate framing and serialization of data for a high-speed scientific-data interface. The aforementioned digital implementation of filtering is a key feature of the REM architecture. Digital filters, in contradistinction to analog ones, provide consistent and temperature-independent performance, which is particularly important when REMs are distributed throughout a large array. Digital filtering also enables selection among multiple filter parameters as required for different radar operating modes. After digital filtering, data are decimated appropriately in order to minimize the data rate out of an antenna panel. The L-band transceiver (see Figure 2) includes a radio-frequency (RF)-to-baseband down-converter chain and an intermediate- frequency (IF)-to-RF up-converter chain. Transmit/receive (T/R) switches enable the use of a single feed to the antenna for both transmission and reception. The T/R switches also afford a built-in test capability by enabling injection of a calibration signal into the receiver chain. In order of decreasing priority, components of the transceiver were selected according to requirements of radiation hardness, then compactness, then low power. All of the RF components are radiation-hard. The noise figure (NF) was optimized to the extent that (1) a low-noise amplifier (LNA) (characterized by NF < 2 dB) was selected but (2) the receiver front-end T/R switches were selected for a high degree of isolation and acceptably low loss, regardless of the requirement to minimize noise.

McWatters, Dalia↗
DOE OSTI2023

Development of local-power-free, remote α -particle detection using optical fibers

We demonstrate the application of fluorescence optical fiber coupled to a telecom grade fiber as a sensor for alpha particles using alpha-specific ZnS(Ag) scintillation materials whose wavelength is down-shifted into a low-loss region of the telecom grade fiber transmission band. Telecom-grade fiber optics offer a solution for sensing alpha radiation in deep repositories and cask storage for radioactive materials due to the stability of SiO 2 under normal environmental conditions and its relative radiation hardness at low radiation doses. Long-term nuclear waste storage facilities require sensors for the detection of leakage of radioactive materials that are maintenance-free, do not require power and can survive with no ‘wear out’ mechanisms for decades. By accomplishing the wavelength transformation, we maximize efficiencies in the detection of α-particles and signal transport and can detect alpha scintillation at distances on the order of >1 km with a sensor that is ~3% efficient and can be easily scaled as a sensor array. This paper describes the construction and testing of the sensor including manufacture of the controlled thickness films, verification of the wavelength shift from 450 to 620 nm and optimization of the sensitivity as a function of thickness. We also model the relative sensitivity of the film as a function of film thickness, and we demonstrate a signal-to-noise ratio of 10 at a range of greater than 1 km.

alpha particles↗
NASA NTRS1986

1986 Annual Conference on Nuclear and Space Radiation Effects, 23rd, Providence, RI, July 21-23, 1986, Proceedings

The present conference on the effects of nuclear and space radiation on electronic hardware gives attention to topics in the basic mechanisms of radiation effects, dosimetry and energy-dependent effects, electronic device radiation hardness assurance, SOI/SOS radiation effects, spacecraft charging and space radiation, IC radiation effects and hardening, single-event upset (SEU) phenomena and hardening, and EMP/SGEMP/IEMP phenomena. Specific treatments encompass the generation of interface states by ionizing radiation in very thin MOS oxides, the microdosimetry of meson energy deposited on 1-micron sites in Si, total dose radiation and engineering studies, plasma interactions with biased concentrator solar cells, the transient imprint memory effect in MOS memories, mechanisms leading to SEU, and the vaporization and breakdown of thin columns of water.

Ellis, Thomas D.↗
NASA NTRS1989

Vacuum microelectronics for beam power and rectennas

Vacuum Microelectronic devices can be described as vacuum transistors or micro-miniature vacuum tubes, as one chooses. The fundamental reason behind this new technology is the very large current densities available from field emitters, namely as high as 10(8) A/sq cm. Array current densities as high as 1000 A/sq cm have been measured. Total electron transit times from source to drain for 1 micron feature size devices have been predicted to be about 150fs. This very short transit time implies the possibility of submillimeter wave transmitters and rectennas in devices which can operate with reasonably high voltages and which are small in size and are lightweight. In addition, they are expected to be extremely radiation hard and very temperature insensitive. That is, they are expected to have radiation hardness characteristics similar to vacuum tubes, and both the high temperature and low temperature limits should be determined by the package. That is, there should be no practical intrinsic temperature or carrier freezeout problems for devices based on metals or composites. But the technology is difficult to implement at the present time because it is based on 300 to 500 angstrom radius field emitters which must be relatively uniform. There is also the need to understand the non-equilibrium transport physics in the near-surface regions of the field emitters.

Gray, Henry F.↗
NASA NTRS2013

Radiation Tests of Single Photon Avalanche Diode for Space Applications

Single photon avalanche diodes (SPADs) have been recently studied as photodetectors for applications in space missions. In this presentation we report the results of radiation hardness test on large area SPAD (actual results refer to SPADs having 500 micron diameter). Dark counts rate as low as few kHz at −10 degC has been obtained for the 500 micron devices, before irradiation. We performed bulk damage and total dose radiation tests with protons and gamma-rays in order to evaluate their radiation hardness properties and their suitability for application in a Low Earth Orbit (LEO) space mission. With this aim SPAD devices have been irradiated using up to 20 krad total dose with gamma-rays and 5 krad with protons. The test performed show that large area SPADs are very sensitive to proton doses as low as 2×10(exp 8) (1 MeV eq) n/cm2 with a significant increase in dark counts rate (DCR) as well as in the manifestation of the "random telegraph signal" effect. Annealing studies at room temperature (RT) and at 80 degC have been carried out, showing a high decrease of DCR after 24-48 h at RT. Lower protons doses in the range 1-10×10(exp 7) (1 MeV eq) n/cm(exp 2) result in a lower increase of DCR suggesting that the large-area SPADs tested in this study are well suitable for application in low-inclination LEO, particularly useful for gamma-ray astrophysics.

radiation hardness↗
NASA NTRS2000

Quantitative Analysis of Charge Injection and Discharging of Si Nanocrystals and Arrays by Electrostatic Force Microscopy

NASA requirements for computing and memory for microspacecraft emphasize high density, low power, small size, and radiation hardness. The distributed nature of storage elements in nanocrystal floating-gate memories leads to intrinsic fault tolerance and radiation hardness. Conventional floating-gate non-volatile memories are more susceptible to radiation damage. Nanocrystal-based memories also offer the possibility of faster, lower power operation. In the pursuit of filling these requirements, the following tasks have been accomplished: (1) Si nanocrystal charging has been accomplished with conducting-tip AFM; (2) Both individual nanocrystals on an oxide surface and nanocrystals formed by implantation have been charged; (3) Discharging is consistent with tunneling through a field-lowered oxide barrier; (4) Modeling of the response of the AFM to trapped charge has allowed estimation of the quantity of trapped charge; and (5) Initial attempts to fabricate competitive nanocrystal non-volatile memories have been extremely successful.

Bell, L. D.↗
DOE OSTI2025

Prediction of Alpha-Particle-Immune Gate-All-Around Field-Effect Transistors (GAA-FET) Based SRAM Design

Alpha particles are known to be a major source of particles creating soft errors in semiconductor devices, such as content flipping in Static Random-Access Memory (SRAM). Recent advancements in transistor nodes have led to the introduction of Gate-All-Around Field Effect Transistors (GAA-FETs), which have better gate control, thus better electrostatics. Moreover, the introduction of bottom dielectric isolation (BDI) eliminates substrate leakage and thus is expected to enhance its radiation hardness. It is thus important to explore if one can design an SRAM that is completely radiation-hard to alpha particles. In this paper, using 3D Technology Computer-Aided-Design (TCAD) simulations, we show that it is possible to design an SRAM using GAA-FET technology so that it is immune to single alpha particle radiation error. In other words, with the design, there will be no single-event upset (SEU) due to alpha particles. We first use ab initio calculations in PHITS to show that there is a maximum linear energy transfer (LET), LET max , for the alpha particle in Si and Si x Ge 1-x . Based on that, by de signing a sub-7nm GAA-FET-based SRAM with BDI, we show that the SRAM does not flip even if the particle strike is in the worst-case scenario for LET > LET max .

42 ENGINEERING↗
DOE OSTI2024

A prototype scintillator real‐time beam monitor for ultra‐high dose rate radiotherapy

Background: FLASH Radiotherapy (RT) is an emergent cancer RT modality where an entire therapeutic dose is delivered at more than 1000 times higher dose rate than conventional RT. For clinical trials to be conducted safely, a precise and fast beam monitor that can generate out-of-tolerance beam interrupts is required. This paper describes the overall concept and provides results from a prototype ultra-fast, scintillator-based beam monitor for both proton and electron beam FLASH applications. Purpose: A FLASH Beam Scintillator Monitor (FBSM) is being developed that employs a novel proprietary scintillator material. The FBSM has capabilities that conventional RT detector technologies are unable to simultaneously provide: (1) large area coverage; (2) a low mass profile; (3) a linear response over a broad dynamic range; (4) radiation hardness; (5) real-time analysis to provide an IEC-compliant fast beam-interrupt signal based on true two-dimensional beam imaging, radiation dosimetry and excellent spatial resolution. Methods: The FBSM uses a proprietary low mass, less than 0.5 mm water equivalent, non-hygroscopic, radiation tolerant scintillator material (designated HM: hybrid material) that is viewed by high frame rate CMOS cameras. Folded optics using mirrors enable a thin monitor profile of ∼10 cm. A field programmable gate array (FPGA) data acquisition system generates real-time analysis on a time scale appropriate to the FLASH RT beam modality: 100–1000 Hz for pulsed electrons and 10–20 kHz for quasi-continuous scanning proton pencil beams. An ion beam monitor served as the initial development platform for this work and was tested in low energy heavy-ion beams ( 86 Kr +26 and protons). A prototype FBSM was fabricated and then tested in various radiation beams that included FLASH level dose per pulse electron beams, and a hospital RT clinic with electron beams. Results: Results presented in this report include image quality, response linearity, radiation hardness, spatial resolution, and real-time data processing. Furthermore, the HM scintillator was found to be highly radiation damage resistant. It exhibited a small 0.025%/kGy signal decrease from a 216 kGy cumulative dose resulting from continuous exposure for 15 min at a FLASH compatible dose rate of 237 Gy/s. Measurements of the signal amplitude versus beam fluence demonstrate linear response of the FBSM at FLASH compatible dose rates of >40 Gy/s. Comparison with commercial Gafchromic film indicates that the FBSM produces a high resolution 2D beam image and can reproduce a nearly identical beam profile, including primary beam tails. The spatial resolution was measured at 35–40 µm. Tests of the firmware beta version show successful operation at 20 000 Hz frame rate or 50 µs/frame, where the real-time analysis of the beam parameters is achieved in less than 1 µs. Conclusions: The FBSM is designed to provide real-time beam profile monitoring over a large active area without significantly degrading the beam quality. A prototype device has been staged in particle beams at currents of single particles up to FLASH level dose rates, using both continuous ion beams and pulsed electron beams. Using a novel scintillator, beam profiling has been demonstrated for currents extending from single particles to 10 nA currents. Radiation damage is minimal and even under FLASH conditions would require ≥50 kGy of accumulated exposure in a single spot to result in a 1% decrease in signal output. Beam imaging is comparable to radiochromic films, and provides immediate images without hours of processing. Real-time data processing, taking less than 50 µs (combined data transfer and analysis times), has been implemented in firmware for 20 kHz frame rates for continuous proton beams.

2D beam imaging↗
NASA NTRS1985

Depletion layer recombination effects on the radiation damage hardness of gallium arsenide cells

The significant effect of junction depletion layer recombination on the efficiency of windowed GaAs cells was demonstrated. The effect becomes more pronounced as radiation damage occurs. The depletion is considered for 1 MeV electron fluences up to 10 to the 16th power e/sq m. The cell modeling separates damage in emitter and base or buffer layers using different damage coefficients is reported. The lower coefficient for the emitter predicts less loss of performance at fluences greater than 10 to the 15th power e/sq cm. A method for obtaining information on junction recombination effects as damage proceeds is described; this enables a more complete diagnosis of damage to be made.

Garlick, G. F. J.↗
NASA NTRS2000

Quantitative analysis of charge injection and discharging of Si nanocrystals and arrays by electrostatic force microscopy

NASA requirements for computing and memory for microspacecraft emphasizes high density, low power, small size, and radiation hardness. The distributed nature of a storage elements in nanocrystal floating-gate memories leads to instrinsic fault tolerance and radiation-hardness. Nanocrystal-based memories also offer the possibility of a faster, lower power operation.

atomic↗
DOE OSTI2020

Annual LDRD Report (FY2019)

The performance of Nuclear Deterrence (ND) systems could be improved by adopting advanced commercial CMOS technologies. However, the radiation hardness of these ND systems must be assured. This project quantified dose rate upset thresholds, allowing us to evaluate whether advanced commercial technologies can be used in rad hard applications. This project also evaluated the susceptibility of advanced commercial technologies to neutron displacement damage and single event effects, and developed hardness assurance methods. As a result of this work, Sandia is now collaborating more closely with DoD agencies and their contractors to understand and improve the radiation hardness of advanced commercial technologies. Sandia Capabilities (SPHINX, lon Beam Lab, FPGA test capabilities) were developed and are being utilized by other programs. Staff were trained to do radiation survivability testing and developed proposals that were funded. Internal and external collaborations and partnerships were developed, including with Georgia Tech. This project received the Best Paper award at the 2019 Hardened Electronics And Radiation Technology (HEART) Conference.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Effects of trapped charge on the signal formation and detection efficiency for subsequent pulses in irradiated silicon sensors

Envisaged high energy physics experiments like the Future Circular Collider require unprecedented radiation hardness of the detectors, as well as short readout time due to high luminosity and occupancy. Silicon has proven to be extremely radiation hard. Sufficient signals can be recorded even at fluences close to 1 ∙ 1 0 16 n e q / cm 2 . Here, the signal formation was studied in silicon strip sensors, irradiated and annealed until the phenomenon of charge multiplication occurred. ATLAS12EC R0 mini sensors were tested by means of edge TCT measurements at temperatures around –20 °C. It was observed that the detection of subsequent signals separated up to several microseconds is altered by the charge trapped during the preceding pulses. The effects of trapped charge on the electrical configuration of a sensor are well known as a polarization or pumping effect in larger band-gap materials like diamond, but is often neglected for silicon at this relatively high temperature. The investigation of the effect created by trapped charges in silicon sensors using subsequent pulses allows to gain information on important parameters such as de-trapping times. Furthermore, it shows a severe impact on the sensor performance in a pile-up scenario. The irradiation fluence and hence the effective doping concentration, the temperature and the amount of initially created charge have a large impact on this phenomenon. The measurements presented help to characterize this phenomenon; particular attention was paid to the application point of view.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Resilience of High-Efficiency CdSeTe:As and CdSeTe:Cu Solar Cells to Proton Irradiation

Power generation in space is currently dominated by expensive III-V multi-junction photovoltaic (PV) devices and cheap crystalline silicon (c-Si) PV devices. Both of these technologies degrade rapidly in proton-radiation-rich space environments, such as the Van Allen belt. The present study of cadmium selenide telluride- (CdSeTe-) based PV devices exposed to 150-to-1500 keV proton irradiation with fluences up to 9 x 1013 cm-2 reveal a more radiation-hard alternative to III-V and c-Si PV technologies. We report on measurement and analysis of current density vs voltage (JV), external quantum efficiency (EQE), external radiative efficiency, and capacitance vs voltage (CV) characteristics. JV characteristics of As-doped CdSeTe devices show 80% remaining power conversion efficiency (PCE) relative to unexposed controls when exposed to 650 keV protons at a fluence of 1012 cm-2. Under these same irradiation conditions, Cu-doped CdSeTe devices demonstrate an even better 95% PCE retention compared with unirradiated control devices. Evidence of radiation-induced absorber p-type doping compensation is observed in the glass-side EQE at 0 V and CV characteristics of most of the irradiated CdSeTe:As devices, but clear compensation is evident only for the most heavily irradiated CdSeTe:Cu devices. Elevated blue-green photocurrent in the film-side 0 V EQE suggests a buried junction in the most heavily irradiated CdSeTe:As devices. Although CdSeTe:Cu devices are the more resilient of the CdSeTe structures, both CdSeTe-based technologies are radiation-hard when compared to c-Si and III-V multi-junction PV.

14 SOLAR ENERGY↗
NASA NTRS1991

Non-volatile, high density, high speed, Micromagnet-Hall effect Random Access Memory (MHRAM)

The micromagnetic Hall effect random access memory (MHRAM) has the potential of replacing ROMs, EPROMs, EEPROMs, and SRAMs because of its ability to achieve non-volatility, radiation hardness, high density, and fast access times, simultaneously. Information is stored magnetically in small magnetic elements (micromagnets), allowing unlimited data retention time, unlimited numbers of rewrite cycles, and inherent radiation hardness and SEU immunity, making the MHRAM suitable for ground based as well as spaceflight applications. The MHRAM device design is not affected by areal property fluctuations in the micromagnet, so high operating margins and high yield can be achieved in large scale integrated circuit (IC) fabrication. The MHRAM has short access times (less than 100 nsec). Write access time is short because on-chip transistors are used to gate current quickly, and magnetization reversal in the micromagnet can occur in a matter of a few nanoseconds. Read access time is short because the high electron mobility sensor (InAs or InSb) produces a large signal voltage in response to the fringing magnetic field from the micromagnet. High storage density is achieved since a unit cell consists only of two transistors and one micromagnet Hall effect element. By comparison, a DRAM unit cell has one transistor and one capacitor, and a SRAM unit cell has six transistors.

Wu, Jiin C.↗
DOE OSTI2022

Exploring Functional Materials by Understanding Beam‐Sample Interactions

Abstract Ultra‐low‐dose electron diffraction is performed with a double metal cyanide catalyst (DMC) to understand how electron irradiation stimulates structural alterations in functional materials. The commonly fading diffraction patterns with dose accumulation depend on the irradiated area and the beam current even when below 50 femto Amperes. Heat generation is observed and modeled by statistical, inelastic scattering events to describe how phonon excitations modulate radiation hardness. Specifically, the characteristic 1/e‐decay of Bragg intensities from DMC is delayed from 6 to 30 eÅ −2 at room temperature, which is comparable to the effect of embedding radiation soft matter in ice. DMC's radiation hardness is enhanced by a latency dose that forms during a phase transformation. This unifying model predicts that a critical dose rate exists for any material that varies between 0.1 and 10 4 eÅ −2 s −1 because of a material dependent competition of heat generation and spread. It shows that Brillouin scattering causes time dependent perturbations in electron irradiated solids that trigger time‐temperature‐transformations on a time scale of nanoseconds to microseconds at room temperature, which is not included in traditional models describing the decay of Bragg intensities by radiolysis.

Kisielowski, Christian↗
DOE OSTI2025

The ladder and readout cables of intermediate silicon strip detector for sPHENIX

A new silicon-strip-type detector was developed for precise charged-particle tracking in the central rapidity region of heavy ion collisions. A new detector and collaboration at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory is sPHENIX, which is a major upgrade of the PHENIX detector. The intermediate tracker (INTT) is part of the advanced tracking system of the sPHENIX detector complex together with a CMOS monolithic-active-pixel-sensor based silicon-pixel vertex detector, a time-projection chamber, and a micromegas-based detector. The INTT detector is barrel shaped and comprises 56 silicon ladders. Two different types of strip sensors of 78 micron pitch and 320 micron thick are mounted on each half of a silicon ladder. Each strip sensor is segmented into 8 × 2 and 5 × 2 blocks with lengths of 16 and 20 mm. Strips are read out with a silicon strip-readout (FPHX) chip. In order to transmit massive data from the FPHX to the down stream readout electronics card (ROC), a series of long and high speed readout cables were developed. This document focuses on the silicon ladder, the readout cables, and the ROC of the INTT. The radiation hardness is studied for some parts of the INTT devices in the last part of this document, since the INTT employed some materials from the technology frontier of the industry whose radiation hardness is not necessarily well known.

43 PARTICLE ACCELERATORS↗