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At least 145 records · Page 8

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NASA NTRS2011

Atomic Data for Neutron-capture Elements I. Photoionization and Recombination Properties of Low-charge Selenium Ions

We present multi-configuration Breit-Pauli AUTOSTRUCTURE calculations of distorted-wave photoionization (PI) cross sections. and total and partial final-state resolved radiative recombination (RR) and dielectronic recombination (DR) rate coefficients for the first six ions of the trans-iron element Se. These calculations were motivated by the recent detection of Se emission lines in a large number of planetary nebulae. Se is a potentially useful tracer of neutron-capture nucleosynthesis. but accurate determinations of its abundance in photoionized nebulae have been hindered by the lack of atomic data governing its ionization balance. Our calculations were carried out in intermediate coupling with semi re1ativistic radial wavefunctions. PI and recombination data were determined for levels within the ground configuration of each ion, and experimental PI cross-section measurements were used to benchmark our results. For DR, we allowed (Delta)n = 0 core excitations, which are important at photoionized plasma temperatures. We find that DR is the dominant recombination process for each of these Se ions at temperatures representative of photoionized nebulae (approx.10(exp 4) K). In order to estimate the uncertainties of these data, we compared results from three different configuration-interaction expansions for each ion, and also tested the sensitivity of the results to the radial scaling factors in the structure calculations. We find that the internal uncertainties are typically 30-50% for the direct PI cross sections and approx.10% for the computed RR rate coefficients, while those for low-temperature DR can be considerably larger (from 15-30% up to two orders of magnitude) due to the unknown energies of near-threshold autoionization resonances. These data are available at the CDS, and fitting coefficients to the total RR and DR rate coefficients are presented. The results are suitable for incorporation into photoionization codes used to numerically simulate astrophysical nebulae, and will enable robust determinations of nebular Se abundances.

Sterling, N. C.↗

NASA NTRS2018

Enhanced Quasiparticle Lifetime in a Superconductor by Selective Blocking of Recombination Phonons with a Phononic Crystal

When quasiparticles in a BCS (Bardeen-Cooper-Schrieffer) superconductor recombine into Cooper pairs, phonons are emitted within a narrow band of energies above the pairing energy at 2 delta. We show that a phonon band gap restricting the escape of recombination phonons from a superconductor can increase the quasiparticle recombination lifetime by more than an order of magnitude. A phonon band gap can be realized and matched to the recombination energy with a phononic crystal, a periodically patterned dielectric membrane. We discuss in detail the nonequilibrium quasiparticle and phonon distributions that arise in a superconductor due to a phonon band gap and a pair-breaking photon signal. Although intrinsically a nonequilibrium effect, the lifetime enhancement in the small-signal regime is remarkably similar to an estimate from an equilibrium formulation. The equilibrium estimate closely follows exp (Omega (sub bg) divided by k (sub B)T (sub b)), where Omega (sub bg) is the phonon band gap energy bandwidth above 2 and T (sub b) is the phonon bath temperature of the coupled electron-phonon system. We discuss the impact of a phononic band gap on the performance of a superconducting circuit element and propose a microwave resonator to measure the enhancement in the quasiparticle lifetime.

Rostem, K.↗

DOE OSTI2022

Evaluating Recombination Mechanisms in RbF Treated Cu(In${}_\mathrm{x}$Ga$_\mathrm{1-x}$)Se$_{2}$ Solar Cells

Rubidium fluoride (RbF) postdeposition treatment (PDT) has been shown to improve the performance of Cu(In x Ga 1-x )Se 2 (CIGS) photovoltaic devices. Here, in this study, temperature-dependent current voltage (JVT) and time-resolved photoluminescence (TRPL) experiments were combined with modeling using the solar cell capacitance simulator (SCAPS) computer code to investigate the effect of the RbF PDT. Two devices, one as-deposited and one with RbF PDT, were deposited by a three stage coevaporation process. JVT measurements suggest the dominant recombination mechanism may be tunneling-enhanced recombination via bandtail states, but that defect states in the bandgap can also be important. RbF PDT is shown to decrease the characteristic energy of the bandtails. TRPL data show an increase in the minority carrier lifetime after RbF PDT, leading to an improved open-circuit voltage. SCAPS modeling indicates that the dominant recombination mechanism is dependent on the specific defect makeup of a device, suggesting that small changes in processing conditions can impact device behavior. This explains the observation that, for some devices, defect states in the gap dominate while others, as is the case here, appear to be dominated by bandtails.

14 SOLAR ENERGY↗

DOE OSTI2026

Understanding Recombination Pathways of CdSeTe/CdTe Devices Using Temperature Dependence of Fill Factor

Understanding the temperature dependence of photovoltaic parameters is critical for identifying performance limiting mechanisms in CdTe-based solar cells. In this study, we investigate the temperature dependence of fill factor (FF(T)) in CdSeTe/CdTe solar cells using a combination of experimental current density-voltage (JV) measurements and numerical simulations. The measured FF(T) exhibits a nonlinear response with temperature, peaking at moderate temperature values (10–30°C). Through numerical modeling, we reveal that this peaking behavior in FF(T) arises when the dominant recombination mechanism transitions from bulk to interface with increasing temperature. This transition is primarily driven by low hole mobility (0.6–1.2 cm2/V·s), while electron mobility, interface recombination velocities, and carrier lifetime also contribute to the effect. Our findings demonstrate that FF(T) analysis is a promising diagnostic tool for distinguishing recombination pathways and guiding the optimization of thin-film CdTe solar cells under real-world conditions.

CdTe photovoltaics↗

DOE OSTI2022

High-yield recombinant bacterial expression of 13 C-, 15 N-labeled, serine-16 phosphorylated, murine amelogenin using a modified third generation genetic code expansion protocol

Amelogenin constitutes ~ 90% of the enamel matrix in the secretory stage of amelogenesis, a still poorly understood process that results in the formation of the hardest and most mineralized tissue in vertebrates – enamel. Most biophysical research with amelogenin uses recombinant protein expressed in Escherichia coli. In addition to providing copious amounts of protein, recombinant expression allows 13 C- and 15 N-labelling for detailed structural studies using NMR spectroscopy. However, native amelogenin is phosphorylated at one position, Ser-16 in murine amelogenin, and a lingering question overshadowing decades of enamel research with recombinant amelogenin is the effect of phosphorylation on its biophysical properties. Using a modified genetic code expansion protocol we have expressed and purified uniformly 13 C-, 15 N-labeled murine amelogenin (pS16M179) with ~95% of the protein being correctly phosphorylated. Homogeneous phosphorylation was achieved using commercially available, enriched, 13 C-, 15 N-labeled media and protein expression was induced with isopropyl β-D-1-thiogalactopyranoside at 310 K. Phosphoserine incorporation was verified from one-dimensional 31P NMR spectra, comparison of 1 H- 15 N HSQC spectra, Phos-tag SDS PAGE, and mass spectrometry. Phosphorus-31 NMR spectra for pS16M179 under conditions known to trigger amelogenin self-assembly into nanospheres confirm nanosphere models with buried N-termini. Lambda phosphatase treatment of these nanospheres results in the dephosphorylation of pS16M179, confirming that smaller oligomers and monomers with exposed N-termini are in equilibrium with nanospheres. Such 13 C-, 15 N-labeling of amelogenin with accurately encoded phosphoserine incorporation will accelerate biomineralization research to understand amelogenesis and stimulate the expanded use of genetic code expansion protocols to introduce phosphorylated amino acids into proteins.

31P-NMR↗

DOE OSTI2023

Nonradiative Recombination Dominates Voltage Losses in Cu(In,Ga)Se 2 Solar Cells Fabricated using Different Methods

Voltage losses reduce the photovoltaic conversion efficiency of thin‐film solar cells and are a primary efficiency limitation in Cu(In,Ga)Se 2 . Herein, voltage loss analysis of Cu(In,Ga)Se 2 solar cells fabricated at three institutions with variation in process, bandgap, absorber structure, postdeposition treatment (PDT), and efficiency is presented. Nonradiative voltage losses due to Shockley–Read–Hall charge carrier recombination dominate and constitute >75% of the total compared to <25% from radiative voltage losses. The radiative voltage loss results from nonideal absorption and carriers in band tails that stem from local composition‐driven potential fluctuations. It is shown that significant bulk lifetime improvements are achieved for all alkali PDT processed absorbers, chiefly associated with reductions in nonradiative recombination. Primary voltage loss contributions (radiative and nonradiative) change little across fabrication processes, but variation in submechanisms (bulk lifetime, net acceptor concentration, and interface recombination) differentiate nonradiative loss pathways in this series of solar cells.

14 SOLAR ENERGY↗

DOE OSTI2021

Recombinant expression of computationally designed peptide-bundlemers in Escherichia coli

Computational design of fully artificial peptides is extensively researched by material scientists and engineers for the construction of novel nanostructures and biomaterials. Such design has yielded a peptide-based building block or bundlemer, a coiled coil peptide assembly that undergoes further physical-covalent interactions to form 1D, 2D and, potentially, 3D hierarchical assemblies and displays targeted and biomimetic material properties. Recombinant expression is a convenient, flexible tool to synthesize such artificial and modified peptides in large quantities while also enabling economical synthesis of isotopically labeled peptides and longer protein-like artificial peptides. This report describes the protocol for recombinant expression of a 31-amino acid, computationally designed bundlemer-forming peptide in Escherichia coli. Peptide yields of 10 mgs per liter of media were achieved which highlights complementary advantages of recombinant expression technique relative to conventional laboratory-scale synthesis, such as solid-phase peptide synthesis.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Recombination between 13 C and 2 H to Form Acetylide ( 13 C 2 2 H – ) Probes Nanoscale Interactions in Lipid Bilayers via Dynamic Secondary Ion Mass Spectrometry: Cholesterol and GM 1 Clustering

Although it is thought that there is lateral heterogeneity of lipid and protein components within biological membranes, probing this heterogeneity has proven challenging. The difficulty in such experiments is due to both the small length scale over which such heterogeneity can occur, and the significant perturbation resulting from fluorescent or spin labeling on the delicate interactions within bilayers. Atomic recombination during dynamic nanoscale secondary ion imaging mass spectrometry (NanoSIMS) is a non-perturbative method for examining nanoscale bilayer interactions. Atomic recombination is a variation on conventional NanoSIMS imaging, whereby an isotope on one molecule combines with a different isotope on another molecule during the ionization process, forming an isotopically enriched polyatomic ion in a distance-dependent manner. In this work, we show that the recombinant ion, 13 C 2 2 H – , is formed in high yield from 13 C- and 2 H-labeled lipids. The low natural abundance of triply labeled acetylide also makes it an ideal ion to probe GM 1 clusters in model membranes and the effects of cholesterol on lipid–lipid interactions. We find evidence supporting the cholesterol condensation effect as well as the presence of nanoscale GM 1 clusters in model membranes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

First-Principles Approach for Assessing Cold Electron Injection Efficiency of Dye-Sensitized Solar Cell: Elucidation of Mechanism of Charge Injection and Recombination

The adequacy of the inclusion of spacer units in the metal-free D-π–A organic dyes pertaining to the augmentation of dye-sensitized solar cell (DSSC) efficiency has been examined through the excited-state simulations of the charge injection and recombination processes at the dye–semiconductor interface. Within the framework of the time-dependent density functional theory, the proposed computational studies focus on the precise evaluation of pivotal factors controlling the rates of photoinduced charge-transfer and energy-transfer processes, including electronic coupling, reorganization energy, and threshold energy barrier in the semiclassical Marcus formalism. The estimation of the fluorescent state appears to be the crucial step while explaining the ultrafast electron injection process and the charge recombination at the Marcus inverted region, as revealed by the obtained results. The retardation of charge recombination is facilitated by the insertion of a thiophene moiety between the π-bridge and the acceptor units. The estimated cold electron injection efficiencies deploying the Onsager–Braun theory, that rely on the computations of cold electron injection lifetime and cold electron lifetime, show a linear correlation with the experimental photovoltaic parameters of the DSSC comprising short-circuit current density, open-circuit voltage, and power conversion efficiency. The outcomes of the present investigation establish a basis for unraveling the mechanism of intricate dynamical processes upon photoexcitation of the sensitizers, as well as devising plausible routes for functional DSSC materials.

14 SOLAR ENERGY↗

DOE OSTI2021

PCET-Based Ligand Limits Charge Recombination with an Ir(III) Photoredox Catalyst

Upon photoinitiated electron transfer, charge recombination limits the quantum yield of photoredox reactions for which the rates for the forward reaction and back electron transfer are competitive. Taking inspiration from a proton-coupled electron transfer (PCET) process in Photosystem II, here a benzimidazole-phenol (BIP) has been covalently attached to the 2,2'-bipyridyl ligand of [Ir(dF(CF 3 )ppy) 2 (bpy)][PF 6 ] (dF(CF 3 )ppy = 2-(2,4-difluorophenyl)-5-(trifluoromethyl)pyridine; bpy = 2,2'-bipyridyl). Excitation of the [Ir(dF(CF 3 )ppy) 2 (BIP-bpy)][PF 6 ] photocatalyst results in intramolecular PCET to form a charge-separated state with oxidized BIP. Subsequent reduction of methyl viologen dication (MV 2+ ), a substrate surrogate, by the reducing moiety of the charge separated species demonstrates that the inclusion of BIP significantly slows the charge recombination rate. The effect of ~24-fold slower charge recombination in a photocatalytic phthalimide ester reduction resulted in a greater than 2-fold increase in reaction quantum efficiency.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

DOE OSTI2021

Slow Auger Recombination of Trapped Excitons Enables Efficient Multiple Electron Transfer in CdS–Pt Nanorod Heterostructures

We report solar-to-fuel conversion reaction often requires multiple proton-coupled electron transfer (PCET) processes powered by the energetic electrons and/or holes generated by the absorption of multiple photons. The effective coupling of multiple electron transfer from the light absorber with the multiple PCET reactions at the catalytic center is one of the key challenges in efficient and selective conversion of solar energy to chemical fuels. In this paper, we examine the dynamics of multiple electron transfer in quantum confined CdS nanorods with a Pt tip, in which the CdS rod functions as the light absorber and the Pt tip the catalytic center. By excitation-fluence-dependent transient absorption spectroscopic measurements, we show that the multiexciton Auger recombination rate in CdS rods follows a carrier-collision model, k n A = n 2 (n – 1)/4k 2 A , with a biexciton lifetime (1/k 2 A ) of 2.0 ± 0.2 ns. In CdS–Pt nanorods, electron transfer kinetics from the CdS conduction band edge to the Pt show negligible dependence on the excitation fluence, occurring with a half-life time of 5.6 ± 0.6 ps. The efficiency of multiple exciton dissociation by multiple electron transfer to Pt decreases from 100% in biexciton states to ~41% at 22 exciton state due to the competition with Auger recombination. The half-lifetime of the n-charge separated state recombination (with n electrons in the Pt and n holes in the CdS) decreases from 10 μs in the single charge separated state to 42 ns in nine charge separated states. Our findings suggest the possibility of driving multielectron photocatalytic reactions under intense illumination and controlling product selectivity through multielectron transfer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Impact of doped barriers on the recombination coefficients of c -plane InGaN/GaN single quantum well light-emitting diodes

Differential carrier lifetime measurements were performed on c-plane InGaN/GaN single quantum well (QW) light-emitting diodes (LEDs) of different QW indium compositions as well as with and without doped barriers. Mg-doped p-type and Si-doped n-type barriers close to the QW were used to reduce the net internal electric field in the QW, thereby improving the electron–hole wavefunction overlap on the LEDs. LEDs with doped barriers show short lifetimes and low carrier densities in the active region compared to the reference LEDs. The recombination coefficients in the ABC model were estimated based on the carrier lifetime and quantum efficiency measurements. The improvement in the radiative coefficients in the LEDs with doped barriers coupled with the blueshift of the emission wavelengths indeed indicates an enhancement in wavefunction overlap and a reduction of quantum confined Stark effect as a result of the reduced internal electric field. However, doped barriers also introduce non-radiative recombination centers and thereby increase the Shockley–Read–Hall (SRH) coefficient, although the increment is less for LEDs with high indium composition QWs. As a result, at high indium composition (22%), LEDs with doped barriers outperform the reference LEDs even though the trend is reversed for LEDs with lower indium composition (13.5%). In conclusion, despite the trade-off of higher SRH coefficients, doped barriers are shown to be effective in reducing the internal electric field and increasing the recombination coefficients.

42 ENGINEERING↗

DOE OSTI2023

Effect of Mg doping on carrier recombination in GaN

Time-resolved photoluminescence measurements have been performed on Mg-doped GaN for Mg concentrations in the low- to mid-10 19 cm -3 . As-grown and annealed (600–675 °C) samples were studied. In the as-grown samples, the nonradiative carrier lifetime was found to be about 200 ps and nearly independent of the Mg concentration. Upon annealing, the carrier lifetimes shorten to ~150 ps but, again, show little dependence on the annealing temperature. The analysis of possible Shockley–Read–Hall recombination centers and their behavior during doping and annealing suggests that the main nonradiative recombination center is the Mg–nitrogen vacancy complex. The weak dependence of the PL decay times on temperature indicates that carrier capture into this center has a very low potential barrier, and the nonradiative recombination dominates even at low temperatures.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs

The nonuniform hole distribution between InGaN quantum wells (QWs) of light emitting diodes (LEDs) has a negative impact on LED efficiency. The uniformity can be increased by using lateral hole injection through sidewalls of V-defects, which form at threading dislocations. However, the inherent coupling between the V-defects and dislocations might affect efficiency of the hole injection and nonradiative recombination. In this work, we have tested the possible impact of the dislocations on the injection and recombination by means of scanning near-field electroluminescence and photoluminescence spectroscopy on single green-emitting InGaN QW LEDs containing large (∼0.5 μm) V-defects. The measurements have not provided any evidence of a lower hole injection efficiency or enhanced nonradiative recombination at the dislocations located at the V-defect facets or their apexes. This shows that large V-defects are excellent volumetric injectors for long wavelength InGaN LEDs. Furthermore, it was established that V-defects are preferential hole injectors even in single quantum well devices. Compared to vertical injection, the V-defect injection allows lowering the operating voltage, which should contribute to an enhanced wall plug efficiency.

42 ENGINEERING↗

DOE OSTI2022

High-resolution mapping reveals hotspots and sex-biased recombination in Populus trichocarpa

Abstract Fine-scale meiotic recombination is fundamental to the outcome of natural and artificial selection. Here, dense genetic mapping and haplotype reconstruction were used to estimate recombination for a full factorial Populus trichocarpa cross of 7 males and 7 females. Genomes of the resulting 49 full-sib families (N = 829 offspring) were resequenced, and high-fidelity biallelic SNP/INDELs and pedigree information were used to ascertain allelic phase and impute progeny genotypes to recover gametic haplotypes. The 14 parental genetic maps contained 1,820 SNP/INDELs on average that covered 376.7 Mb of physical length across 19 chromosomes. Comparison of parental and progeny haplotypes allowed fine-scale demarcation of cross-over regions, where 38,846 cross-over events in 1,658 gametes were observed. Cross-over events were positively associated with gene density and negatively associated with GC content and long-terminal repeats. One of the most striking findings was higher rates of cross-overs in males in 8 out of 19 chromosomes. Regions with elevated male cross-over rates had lower gene density and GC content than windows showing no sex bias. High-resolution analysis identified 67 candidate cross-over hotspots spread throughout the genome. DNA sequence motifs enriched in these regions showed striking similarity to those of maize, Arabidopsis, and wheat. These findings, and recombination estimates, will be useful for ongoing efforts to accelerate domestication of this and other biomass feedstocks, as well as future studies investigating broader questions related to evolutionary history, perennial development, phenology, wood formation, vegetative propagation, and dioecy that cannot be studied using annual plant model systems.

59 BASIC BIOLOGICAL SCIENCES↗

DOE OSTI2020

Iodine interstitials as a cause of nonradiative recombination in hybrid perovskites

The identification of deep-level defects that act as detrimental nonradiative recombination centers is critical for optimizing the optoelectronic performance of hybrid perovskites. Although extensive studies have been devoted to revealing the nature of deep-level defects in hybrid perovskites, it is still unclear what defects are responsible for the experimentally observed nonradiative recombination rates. Employing first-principles approaches, we quantitatively show that the iodine interstitial is a dominant nonradiative recombination center in methylammonium-lead iodide. Finally, this important insight points to a target for defect engineering in order to further improve the performance of hybrid perovskites.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Anomalous Auger Recombination in PbSe

Using first-principles approaches we find that the Auger recombination in PbSe is anomalous in three distinct ways. First, the direct Auger coefficient is 4 orders of magnitude lower than that of other semiconductors with similar band gaps, a result that can be attributed to the lack of involvement of a heavy-hole band. Second, phonon-assisted indirect Auger recombination prevails, contrary to the common belief that direct Auger is dominant in narrow-gap semiconductors. Third, an unexpectedly weak temperature dependence of the Auger coefficient is observed, which we can now attribute to the indirect nature of the Auger process. The widely accepted explanation of this behavior in terms of an unusual temperature dependence of the band gap is only a secondary effect. Furthermore, our results elucidate the mechanisms underlying the anomalous Auger recombination in IV-VI semiconductors in general, which is critical for understanding and engineering carrier transport.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology

Semiconductor–insulator interfaces play an important role in the reliability of integrated devices; however, the impact of these interfaces on the physical mechanisms related to single-event effects has not been previously reported. We present experimental data that demonstrate that single-event charge collection can be impacted by changes in interface quality. The experimental data, combined with simulations, show that single-event response may depend on surface recombination at interface defects. The effect depends on strike location and increases with increasing linear energy transfer (LET). Surface recombination can affect single-event charge collection for interfaces with a surface recombination velocity (SRV) of 1000 cm/s and is a dominant charge collection mechanism with SRV >10 5 cm/s.

42 ENGINEERING↗