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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

Circuit and Method for Communication Over DC Power Line

A circuit and method for transmitting and receiving on-off-keyed (OOK) signals with fractional signal-to-noise ratios uses available high-temperature silicon- on-insulator (SOI) components to move computational, sensing, and actuation abilities closer to high-temperature or high-ionizing radiation environments such as vehicle engine compartments, deep-hole drilling environments, industrial control and monitoring of processes like smelting, and operations near nuclear reactors and in space. This device allows for the networking of multiple, like nodes to each other and to a central processor. It can do this with nothing more than the already in-situ power wiring of the system. The device s microprocessor allows it to make intelligent decisions within the vehicle operational loop and to effect control outputs to its associated actuators. The figure illustrates how each node converts digital serial data to OOK 18-kHz in transmit mode and vice-versa in receive mode; though operations at lower frequencies or up to a megahertz are within reason using this method and these parts. This innovation s technique modulates a DC power bus with millivolt-level signals through a MOSFET (metal oxide semiconductor field effect transistor) and resistor by OOK. It receives and demodulates this signal from the DC power bus through capacitive coupling at high temperature and in high ionizing radiation environments. The demodulation of the OOK signal is accomplished by using an asynchronous quadrature detection technique realized by a quasi-discrete Fourier transform through use of the quadrature components (0 and 90 phases) of the carrier frequency as generated by the microcontroller and as a function of the selected crystal frequency driving its oscillator. The detected signal is rectified using an absolute-value circuit containing no diodes (diodes being non-operational at high temperatures), and only operational amplifiers. The absolute values of the two phases of the received signal are then summed and hard limited (digitized) by comparing them to a reference level and are then input into a microprocessor as a serial bit stream. The quasi-discrete Fourier transform is performed in high-temperature components (operational amplifiers, analog switches, resistors, and capacitors). The demodulated signal is a serial data stream that is input to the UART (universal asynchronous receiver transmitter) receiver pin of the microprocessor. The OOK of the carrier frequency uses the output of the UART pin as an enabling signal that drives the gate of the MOSFET. Logic low bits enable the carrier frequency (realized by using the 0 phase signal from the microcontroller, though either phase may be used) to be DC-coupled to the power supply bus through a current-limiting resistor mounted between the MOSFET drain and the supply rail. The presence of logic lows on the power supply rail is realized by carrier bursts while logic highs are realized by the absence of bursts.

Krasowski, Michael J.↗
NASA NTRS2014

Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for Single-Event Gate Rupture and Single-Event Burnout

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture's data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data. Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most commonly used power transistor. MOSFETs are typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single-event gate rupture (SEGR) or single-event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. See [1] through [5] for more information. The objective of this effort was to investigate the SEGR and SEB responses of two power MOSFETs recently produced. These tests will serve as a limited verification of these parts. It is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Scheick, Leif↗
DOE OSTI2024

Soft X-ray quantum efficiency of a commercial CMOS imaging sensor

The demonstrated performance and cost-effectiveness of complementary metal-oxide-semiconductor (CMOS) sensors make them a potentially attractive option for low-cost space-based X-ray observatories. We have previously reported on the performance of a commercially available backside-illuminated Sony IMX290LLR-C CMOS sensor and found it to offer X-ray spectral resolutions comparable to the charged coupled devices (CCDs) aboard Suzaku and Chandra and to have a sufficient radiation hardness for use in low Earth orbit. Here, in this work, we report on the quantum efficiency (QE) of this sensor, an essential metric for modeling the sensitivity of an instrument as an X-ray detector. Using the Advanced Photon Source at Argonne National Laboratory, we measure the soft X-ray QE of this CMOS sensor to be 0.28 ± 0.02 at a photon energy of 490.5 eV. This energy was chosen for its proximity to the astrophysically important O VII triplet emission lines (~574 eV) studied by the HaloSat mission. Although not surpassing that of the back-illuminated CCDs aboard Suzaku and Chandra, this QE compares favorably to that of the front-illuminated CCDs aboard the same observatories and is competitive with that of the silicon drift detectors used aboard HaloSat, making it a strong candidate for use on future X-ray small satellite (SmallSat) missions.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Light sources with bias tunable spectrum based on van der Waals interface transistors

Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage –by suitably selecting the material forming the interfaces– and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods.

36 MATERIALS SCIENCE↗
NASA NTRS1981

Proton-induced noise in digicons

The Space Telescope, which carries four Digicons, will pass several times per day through a low-altitude portion of the radiation belt called the South Atlantic Anomaly. This is expected to create interference in what is otherwise anticipated to be a noise-free device. Two essential components of the Digicon, the semiconductor diode array and the UV transmitting window, generate noise when subjected to medium-energy proton radiation, a primary component of the belt. These trapped protons, having energies ranging from 2 to 400 Mev and fluences at the Digicon up to 4,000 P+/sec-sq cm, pass through both the window and the diode array, depositing energy in each. In order to evaluate the effect of these protons, engineering test models of Digicon tubes to be flown on the High Resolution Spectrograph were irradiated with low-flux monoenergetic proton beams at the University of Maryland cyclotron. Electron-hole pairs produced by the protons passing through the diodes or the surrounding bulk caused a background count rate. This is the result of holes diffusing over a distance of many diode spacings, causing counts to be triggered simultaneously in the output circuits of several adjacent diodes. Pulse-height spectra of these proton-induced counts indicate that most of the bulk-related counts overlap the single photoelectron peak. A geometrical model will be presented of the charge collection characteristics of the diode array that accounts for most of the observed effects.

Smith, L. C.↗
DOE OSTI2023

Chapter 14: Surface plasmon resonance enhanced artificial photosynthesis of chemical fuels for energy storage

Nanostructured noble metals such as Au, Ag, and Cu have interesting optical properties because of the oscillation motions of their surface electrons upon strong coupling with light under resonance conditions. This resonant oscillation motion of conduction electrons refers to surface plasmon resonance (SPR) and localized SPR (LSPR) when localized near the surface of a nanoparticle. The extinction spectrum of a solution of plasmonic nanoparticles has tunable wavelength responses from UV to NIR due to strong light scattering and absorption which are highly sensitive to the permittivity of the nanoparticles, their sizes and shapes, and chemical environment. Strong light scattering due to the LSPR of plasmonic nanoparticles creates a strong localized and far-field intensity capable of enhancing light absorption characteristics of a chromophore near a plasmonic surface. Engineering the chromophores’ radiative decay dynamics can be done by 1) increasing its radiative decay rate to increase its photoluminescence intensity and 2) increasing its nonradiative decay rates associated to direct charge transfer to the metal surface. Such interesting photophysical properties of a chromophore can be extended to other light-absorbing materials such as semiconductor thin films and nanostructures. This plasmonic effect on the photophysics of a light-absorbing material can be theoretically and experimentally validated. The phenomenon has also been applied to advanced optoelectronic devices such as organic light-emitting diodes (OLED)1 and organic photovoltaics (OPV).2-4 The local field created by the SPR can provide an intense EM field to enhance photoluminescence emission of an organic chromophore5-8 and Raman scattering of an organic molecule, and single-molecule Raman9-10 can be detected on specially designed LSPR substrate. (Figure 1 on SPR for energy) Recent studies suggest that LSPR can be incorporated in light-harvesting and conversion systems to increase energy conversion in a solar cell and photoelectrochemical cell and chemical transformations of CO2 to chemical fuels.11-12 Plasmonic active metals naturally exhibit catalytic activities for electrochemical fuel conversion that can be enhanced by engineering their structures to form unique catalytic structures such as symmetry-broken Au-Cu Janus nanocrystals.13 These studies are critical to addressing the global challenges of energy14-15 and CO2 emission from nonrenewable sources such as coal, petroleum, and natural gas.16-17 Electrochemical systems comprised of unique photonic structures and functions that enable efficient and affordable energy harvesting/conversion/storage are highly desired for providing safe and environment-friendly energy sources. This chapter reviews our recent work of LSPR enabled photoelectrochemical water splitting and recent advances in LSPR-enabled CO2 reduction and photochemical reactions reported in the literature. Scientific and technical challenges of applying LSPR to enhance these energy conversion and storage systems are discussed at the conclusion of this chapter.

Pan, Shanlin↗
DOE OSTI2024

Photovoltaic effect on silicon–alumina–ferromagnet tunnel junction providing insights about spin-dependent molecular spintronics solar cells

The study focuses on the observation of the photovoltaic (PV) effect on Si/AlOx/FM semiconductor–insulator–ferromagnetic metal (SIFM) structure. Utilization of ~10 nm NiFe film as the top ferromagnet (FM) layer was permeable for sufficient light radiation necessary for reaching the silicon substrate for the generation of electron–hole pairs upon photoexcitation. The effect of light intensity and magnetic field was studied on the SIFM’s PV response. We also investigated the role of silicon doping and the AlOx tunnel barrier between Si and FM in exploring suitable band bending necessary for separating the electron–hole pairs. Increasing the dopant density in Si and a damaged AlOx tunnel barrier quenched the PV effect. Ferromagnet/Insulator/Ferromagnet (FMIFM) was also studied to gain deeper mechanistic insights into the spin-dependent photovoltaic effect observed on FM/AlOx/FM tunnel junction-based molecular spintronics devices. Bridging of magnetic molecules between the Si and FM electrodes of SIFM increased the overall device current by establishing additional parallel conduction channels along with the AlOx tunnel barrier. However, SIFM with molecular conduction channels did not produce a PV effect. This study reported the PV effect on well-designed SIFM and opened possibilities for exploring new systems. More importantly, this paper provided insights into the role of molecule-induced exchange coupling in transforming an ordinary, cheap, and widely available ferromagnet into a semiconductor-like material capable of showing PV.

14 SOLAR ENERGY↗
NASA NTRS1989

Total dose effect on soft error rate for dynamic metal-oxide-semiconductor memory cells

A simple model for the soft error rate for dynamic metal-oxide-semiconductor random access memories due to normal galactic radiation was devised and then used to calculate the rate of decrease of the single-event-upset rate with total radiation dose. The computation shows that the decrease in the soft error rate is less than 10 percent per day if the shielding is 0.5 g/sq cm and the spacecraft is in a geosynchronous orbit. The decrease is considerably less in a polar orbiting device.

Benumof, Reuben↗
DOE OSTI2020

Development of Lattice-Mismatched GaInAsP for Radiation Hardness

We develop lattice-mismatched GaInAsP as an alternative alloy to pure As-based alloys currently used in III-V multijunction solar cells. Increasing the alloy phosphorous and indium content while maintaining an optimal bandgap may allow high efficiency multijunction devices with increased radiation hardness. Here, 1.0-eV GaInAsP is developed and implemented into single and multijunction solar cell devices. The lattice-mismatched GaInAsP must be grown strain free, and the subcell thickness must be maintained below the thickness where surface-driven phase separation occurs. As observed in transmission electron microscopy and cathodoluminescence imaging, phase separation strengthens in the GaInAsP layer and leads to interfacial defect formation when the cell thickness is too great. We show single junction 1.0-eV Ga 0.5 In 0.5 As 0.7 P 0.3 with excellent carrier collection and a bandgap-voltage offset of 0.40 V. This material quality approaches that of 1.0-eV Ga 0.7 In 0.3 As used in inverted metamorphic multijunction devices, but has increased phosphorus content and consequently is expected to have a higher radiation resistance. We incorporate the 1.0-eV GaInAsP subcell into a 3-junction inverted metamorphic solar cell to test the performance of the subcell in a multijunction. No additional loss is observed upon integration into a multijunction cell: both the carrier collection and voltage of the GaInAsP subcell are unchanged from single junction devices. While further materials development and radiation testing is still required, these preliminary results indicate that lattice-mismatched GaInAsP can be effectively used in multijunction solar cells to replace radiation-soft materials.

14 SOLAR ENERGY↗
DOE OSTI2021

Ultrafast all-optical diffraction switching using semiconductor metasurfaces

Ultrafast all-optical switching using Mie resonant metasurfaces requires both on-demand tunability of the wavefront of the light and ultrafast time response. However, devising a switching mechanism that has a high contrast between its “on” and “off” states without compromising speed is challenging. Here, we report the design of a tunable Mie resonant metasurface that achieves this behavior. Our approach utilizes a diffractive array of semiconductor resonators that support both dipolar and quadrupolar Mie resonances. By balancing the strengths of the dipole and quadrupole resonances, we can suppress radiation into the first diffraction order, thus creating a clearly delineated “off”-state at the operating wavelength. Then, we use optical injection of free- carriers to spectrally shift the multipoles and rebalance the multipole strengths, thereby enabling radiation into the diffraction order—all on an ultrafast timescale. We demonstrate ultrafast off-to-on switching with I on /I off ≈ 5 modulation of the diffracted intensity and ultrafast on-to-off switching with Ion/Ioff ≈ 9 modulation. Furthermore, both switches exhibit a fast τ tr ≈ 2.7 ps relaxation time at 215 μJ cm -2 pump fluence. Further, we show that for higher fluences, the temporal response of the metasurface is governed by thermo-optic effects. This combination of multipole engineering with lattice diffraction opens design pathways for tunable metasurface-based integrated devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2007

WGM-Based Photonic Local Oscillators and Modulators

Photonic local oscillators and modulators that include whispering-gallery mode (WGM) optical resonators have been proposed as power-efficient devices for generating and detecting radiation at frequencies of the order of a terahertz. These devices are intended especially to satisfy anticipated needs for receivers capable of detecting lowpower, narrow-band terahertz signals to be used for sensing substances of interest in scientific and military applications. At present, available terahertz-signal detectors are power-inefficient and do not afford the spectral and amplitude resolution needed for detecting such signals. The proposed devices would not be designed according to the conventional approach of direct detection of terahertz radiation. Instead, terahertz radiation would first be up-converted into the optical domain, wherein signals could be processed efficiently by photonic means and detected by optical photodetectors, which are more efficient than are photodetectors used in conventional direct detection of terahertz radiation. The photonic devices used to effect the up-conversion would include a tunable optical local oscillator and a novel electro-optical modulator. A local oscillator according to the proposal would be a WGM-based modelocked laser operating at a desired pulserepetition rate of the order of a terahertz. The oscillator would include a terahertz optical filter based on a WGM microresonator, a fiber-optic delay line, an optical amplifier (which could be either a semiconductor optical amplifier or an erbium-doped optical fiberamplifier), and a WGM Ka-band modulator. The terahertz repetition rate would be obtained through harmonic mode locking: for example, by modulating the light at a frequency of 33 GHz and locking each 33d optical mode, one would create a 1.089-THz pulse train. The high resonance quality factors (Q values) of WGM optical resonators should make it possible to decrease signal-generation threshold power levels significantly below those of other optical-signal-generation devices.

Matsko, Andrey↗
NASA NTRS2000

Modeling of Optoelectronic Devices

Ultrafast modulation of semiconductor quantum well (QW) laser is of technological importance for information technology. Improvement by order(s) of magnitude in data transfer rate is possible as terahertz (THz) radiation is available for heating the laser at picosecond time scale. Optical gain modulation in the QW is achieved via temperature modulation of electron-hole plasma (EHP). Applications include free-space THz communication, optical switching, and pulse generation. The EHP in the semiconductor QW is described with a two-band model. Semiconductor Bloch equations with many-body effects are used to derive a hydrodynamical model for the active QW region. Because of ultrafast carrier-carrier scatterings in the order of 50 fs, EHP follows quasiequilibrium Fermi-Dirac distributions and THz field interacts incoherently with it. Carrier-longitudinal optical (LO) phonon scatterings and coherent laser-EHP interaction are treated microscopically in our physical model. A set of hydrodynamical equations for plasma density, temperature, and laser envelop amplitude are derived and Runge-Kutta method is adopted for numerical simulation. A typical 8 nm GaAs/Al(0.3)Ga(0.7) As single QW at 300 K is used. Additional information is contained in the original extended abstract.

Li, Jian-Zhong↗
NASA NTRS2019

Inclusion of Radiation Environment Variability for Reliability Estimates for SiC Power MOSFETs

Variability of the solar energetic particle environment is investigated for single-event-burnout reliability of silicon-carbide power metal-oxide-semiconductor field effect transistors. A probabilistic assessment of failure evaluates the benefits of de-rating voltage, shielding, and mission length. The Prediction of Solar particle Yields for Characterizing Integrating Circuits code is used to calculate a cumulative density function for the fluence of the environment. The lethal ion method is then used to determine what proportion of the environment will cause single-event-burnout. The operating voltage determines the lowest linear-energy-transfer particle that will cause single-event-burnout and that should be included in the environment distribution. The shielding and mission length also determine the final environment distribution of the mission fluence. Through calculating the reliability for different operating voltages, shielding, and mission length for a specific device, it is shown that shielding thickness and operating voltage have a large effect on reliability and can be traded off during the design.

Heavy ion↗
NASA NTRS2002

Novel High Efficient Organic Photovoltaic Materials: Appendix for Summary of Research

There are many different kinds of conjugated polymers that may be useful in photovoltaic devices. So far, the most popular and successful conjugated polymers used in photovoltaic devices include poly(1,4-)phenylenevinylenes (PPV), C60 and their derivatives. The discovery of electro-luminescence in PPV has stimulated a great deal of interest in developing "plastic" solid-state semiconductor devices. The overall synthetic methodology for the preparation of PPV can be divided into three main categories: (1) side chain derivatization, (2) precursor approach, and (3) in-situ polymerization. In this project, the first method was adopted. As discussed in project proposal and literatures, the overall efficiency of photovoltaic devices containing conjugated polymers is determined by the materials ability to generate excitons from incoming radiation, and then to separate the charges at donor/acceptor interfaces, and then to transport charges to respective electrodes. Given that effective exciton diffusion range are typical less then 30 nm, unique morphological structures are needed. This need led to several research groups to the idea that interpenetrating or bi-continuous networks of donor (electron donating) and acceptor (electron withdrawing) polymers should give better results. One approach involved the use of functionalized PPV. The attachment of electron withdrawing cyano groups to a PPV forms the CN-PPV, making it a strong electron acceptor. Underivatized PPV is a generally considered a hole-transporting material. Using blends of MEH-PPV, a soluble donor PPV derivative, as a hole transporter and CN-PPV as an electron transporter, a quantum efficiencies of up to 6% was achieved.

Sun, Sam↗
DOE OSTI2023

Determination of Thermal Damage Threshold in THz Photomixers Using Raman Spectroscopy

The increase of device lifetime and reliability of THz photomixers will play an essential role in their possible future application. Therefore, their optimal work conditions/operation range, i.e., the maximal incident optical power should be experimentally estimated. We fabricated and tested THz photomixer devices based on nitrogen-implanted GaAs integrated with a Bragg reflector. Raman spectroscopy was applied to investigate the material properties and to disclose any reversible or irreversible material changes. The results indicate that degradation effects in the photomixer structures/material could be avoided if the total optical power density does not exceed levels of about 0.7 mW/µm 2 for 100 min of operation. Furthermore, the investigations performed during 1000 min of optical exposure on the photomixer devices’ central region comprising interdigitated metal-semiconductor-metal (MSM) structures suggest a reversible “curing” mechanism if the power density level of ~0.58 mW/µm 2 is not exceeded. Long-term operation (up to 1000 h) reveals that the photomixer structures can withstand an average optical power density of up to ~0.4 mW/µm 2 without degradation when biased at 10 V. Besides the decrease of the position of the A1g (LO) Raman mode from ~291 cm -1 down to ~288 cm -1 with increasing optical power density and operation time, broad Raman modes evolve at about 210 cm -1 , which can be attributed to degradation effects in the active photomixer/MSM area. In addition, the performed carrier lifetime and photomixer experiments demonstrated that these structures generated continuous wave sub-THz radiation efficiently as long as their optimal work conditions/operation range were within the limits established by our Raman studies.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Investigating the Effects of Individual Neutron-Induced Defects in Bipolar Junction Transistors

Here, this study investigates neutron-induced displacement damage in Bipolar Junction Transistors (BJTs) using TCAD models informed by Deep-Level-Transient-Spectroscopy (DLTS) data. These models are calibrated and validated against experimental measurements performed at various neutron fluences. Both npn and pnp transistor configurations are studied to analyze the effects of individual traps on carrier recombination and base leakage currents. In npn transistors, deep traps (0.42 eV from the conduction band) dominate at low voltages, while shallow traps (0.17 eV from the conduction band) become prominent at higher voltages. Conversely, pnp transistors have base leakage current predominantly due to deep-level traps. The study observes a notable trend in trap density versus fluence, characterized by a linear relationship on a log-log scale. These insights into defect evolution under radiation conditions are crucial for optimizing semiconductor device reliability and performance in radiation-prone environments.

42 ENGINEERING↗
DOE OSTI2020

Solid-state laser refrigeration of a composite semiconductor Yb:YLiF 4 optomechanical resonator

Photothermal heating represents a major constraint that limits the performance of many nanoscale optoelectronic and optomechanical devices including nanolasers, quantum optomechanical resonators, and integrated photonic circuits. Here, we demonstrate the direct laser refrigeration of a semiconductor optomechanical resonator >20 K below room temperature based on the emission of upconverted, anti-Stokes photoluminescence of trivalent ytterbium ions doped within a yttrium-lithium-fluoride (YLF) host crystal. Optically-refrigerating the lattice of a dielectric resonator has the potential to impact several fields including scanning probe microscopy, the sensing of weak forces, the measurement of atomic masses, and the development of radiation-balanced solid-state lasers. In addition, optically refrigerated resonators may be used in the future as a promising starting point to perform motional cooling for exploration of quantum effects at mesoscopic length scales, temperature control within integrated photonic devices, and solid-state laser refrigeration of quantum materials.

42 ENGINEERING↗
DOE OSTI2025

Gallium oxide (Ga2O3) as a radiation detector distinguishing neutrons and gammas

Gallium oxide (Ga2O3) is a promising ultrawide bandgap semiconductor for radiation detection with the potential of integrating electronic and scintillation functions within a single crystal device. This study establishes the scintillation response of β-Ga2O3 gamma irradiation from yttrium-88 (88Y). Then, californium-252 (252Cf) is used as a spontaneous fission source of mixed neutron and gamma radiation field to measure scintillation signals. Pulse shape discrimination and constant fraction discrimination techniques were used to separate neutron and gamma interaction events. Further investigation indicates that the prompt temporal responses of β-Ga2O3 for gammas and neutrons may enable discrimination of the two by prompt pulse fitting methods, focused around the initial peak. For gamma irradiation, we observed a rise time (τr) of 2.1 ns, decay time (τd) of 9.5 ns, and a full width at half maximum (FWHM) of 6.2 ns. For neutrons, it showed a τr of 2.3 ns, a τd of 12.1 ns, 9.4 ns FWHM, and reduced peak intensity. A diamond detector exhibited a more symmetrical τr and τd for both gamma and neutron signals and therefore is less effective at discriminating between the two by this method. This draws attention to β-Ga2O3’s ability to distinguish neutron and gamma particles. These findings showcase Ga2O3’s potential as a next-generation semiconductor for applications in nuclear safety and medical imaging, where precise discrimination between neutron and gamma interactions is essential.

Valdes, D. J. (ORCID:0000000304373720)↗