Search NASA⌕ Search

SEARCH · Search NASA

Results for “switching device”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 145 records · Page 8

Implementation and Demonstration of P4 Software for Improving ICS Protocol Visibility and Control [Slides]

No prior enabling funded work applicable to this proposal. Programming Protocol-independent Packet Processors (P4) is an open source, domain-specific programming language for network switching devices. P4 complements traditional Software Defined Networking (SDN) which is primarily concerned with the management of packets (e.g. routing/dropping decisions) rather than how each packet is processed. The introduction of P4 provided new capabilities (e.g. firewall, load balancing, enhanced security) but has primarily been deployed in data centers. This effort investigates ways to expand P4 into other niches such as ICS networks.

97 MATHEMATICS AND COMPUTING↗

Scanning means for Cassegrainian antenna

Mechanical antenna beam switching device detects weak signals over atmospheric and equipment noise sources in microwave antennas. It periodically nutates the paraboloidal subdish in a Cassegrainian reflector system.

Giandomenico, A.↗

A transformer of closely spaced pulsed waveforms

Passive circuit, using diodes, transistors, and magnetic cores, transforms the voltage of repetitive positive or negative pulses. It combines a pulse transformer with switching devices to effect a resonant flux reset and can transform various pulsed waveforms that have a nonzero average value and are relatively cosely spaced in time.

Niedra, J.↗

Mercury capillary interrupter Patent

Interrupter switching device utilizing electrodes and mercury filled capillary tubes in which current flow vaporizes mercury as circuit breaker

Heckler, C. H.↗

Electronic switching circuit uses complementary non-linear components

Inherent switching properties of saturable inductors and storage diodes are combined to perform large variety of electronic functions, such as pulse shaping, gating, and multiplexing. Passive elements replace active switching devices in generation of complex waveforms.

Zucker, O. S.↗

Radiation sensitive solid state switch

A mechanically operable solid state switch suited for use in achieving a variable circuit-switching function is described. This switch is characterized by an annular array of photoresponsive switching devices, disposed in communication with an included source of radiation, and a plurality of interchangeable, mechanically operable interrupter disks. Each disk has a predetermined pattern of transparent and opaque portions. Operative displacement of each disk serves to make and break selected electrical circuits through the photo responsive devices of said array.

Hutto, R. J.↗

Fast pressure-sensor system

Miniature silicon-diaphragm sensors and signal multiplexer are mounted to ganged zero-operate-calibrate pressure selector switches. Device allows in-situ calibration, can be computer controlled, and measures at approximately 10,000 readings per second.

Gross, C.↗

Battery single-cell protection system

Protective circuit consists of solid state comparator switch and high current switching device combined into single module, which can be mounted directly on each cell as part of cell or battery case construction. System prohibits driving cells beyond set voltage limits and allows deeper discharge without cell reversal.

Thomas, R. D.↗

Microelectronic components and metallic oxide studies and applications

The project involved work in two basic areas: (1) Evaluation of commercial screen printable thick film conductors, resistors, thermistors and dielectrics as well as alumina substrates used in hybird microelectronics industries. Results of tests made on materials produced by seven companies are presented. (2) Experimental studies on metallic oxides of copper and vanadium, in an effort to determine their electrochemical properties in crystalline, powder mixtures and as screen printable thick films constituted the second phase of the research effort. Oxide investigations were aimed at finding possible applications of these materials as switching devices memory elements and sensors.

Williams, L., Jr.↗

Multi-cell battery protection system

A multi-cell battery protection system is described wherein each cell has its own individual protective circuit. The protective circuits consist of a solid state comparator unit and a high current switching device such as a relay. The comparator units each continuously monitor the associated cell and when the cell voltage either exceeds a predetermined high level or falls below a predetermined low level, the relay is actuated whereby a bypass circuit is completed across the cell thereby effectively removing the cell from the series of cells.

Thomas, R. D.↗

Multi-chamber controllable heat pipe

A temperature controllable heat pipe switching device is reported. It includes separate evaporating and condensing chambers interconnected by separate vapor flow and liquid return conduits. The vapor flow conduit can be opened or closed to the flow of vapor, whereas the liquid return conduit blocks vapor flow at all times. When the vapor flow path is open, the device has high thermal conductivity, and when the vapor flow path is blocked the device has low thermal conductivity.

Shlosinger, A. P.↗

System for use in conducting wake investigation for a wing in flight

A system supported by a wing in flight is described which has a reference total pressure port in spaced relation with a wake as the wake is generated by the wing, a reference static pressure port supported in spaced relation with the wake, and a probe adapted to be displaced along an accurate path through the wake including a total pressure port and static pressure ports. A differential pressure transducer and a pressure switching device are interposed between the ports and the transducer is provided for selectively connecting pairs of the ports to the transducer in opposed relation, whereby a single transducer is utilized to obtain differential pressure measurement for the wake with enhanced accuracy.

Bikle, P. F.↗

Crossbar switching requirements for future multibeam TDMA communications satellites

Requirements for microwave switching in space, based on a frequency translating satellite are discussed. A 100 x 100 switch with a bandwidth of 2.5 GHz is considered for the more than 70 U.S. metropolitan areas with populations over half of a million. Switch architectures are outlined and switching devices, logic requirements, and reliability are described.

Hoffman, M.↗

An SCR inverter for electric vehicles

An inverter for an electric vehicle propulsion application has been designed and constructed to excite a polyphase induction motor from a fixed propulsion battery source. The inverter, rated at 35kW peak power, is fully regenerative and permits vehicle operation in both the forward and reverse directions. Thyristors are employed as the power switching devices arranged in a dc bus commutated topology. This paper describes the major role the controller plays in generating the motor excitation voltage and frequency to deliver performance similar to dc systems. Motoring efficiency test data for the controller are presented. It is concluded that an SCR inverter in conjunction with an ac induction motor is a viable alternative to present dc vehicle propulsion systems on the basis of performance and size criteria.

Latos, T.↗

Variable N-type negative resistance in an injection-gated double-injection diode

Double-injection (DI) switching devices consist of p+ and n+ contacts (for hole and electron injection, respectively), separated by a near intrinsic semiconductor region containing deep traps. Under proper conditions, these devices exhibit S-type differential negative resistance (DNR) similar to silicon-controlled rectifiers. With the added influence of a p+ gate appropriately placed between the anode (p+) and cathode (n+), the current-voltage characteristic of the device has been manipulated for the first time to exhibit a variable N-type DNR. The anode current and the anode-to-cathode voltage levels at which this N-type DNR is observed can be varied by changing the gate-to-cathode bias. In essence, the classical S-type DI diode can be electronically transformed into an N-type diode. A first-order phenomenological model is proposed for the N-type DNR.

Kapoor, A. K.↗