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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Monolithic InP/Ga0.47In0.53As tandem solar cells for space

A review is provided of progress made in the development of InP/Ga(0.47)In(0.53)As monolithic tandem solar cells since the last SPRAT conference. Improved one-sun, three terminal tandem designs have resulted in Air Mass Zero (AM0) efficiencies as high as 23.9 pct. at 25 C. Additionally, high efficiency concentrator versions of the three terminal device were developed. The best concentrator tandem has a peak AM0 efficiency of 28.8 pct. under 40.3 suns at 25 C. For the concentrator tandems, the subcell performance parameter temperature coefficients are reported as a function of the concentration ratio. Results from a computer modeling study are presented which provide a clear direction for improving the efficiency of the concentrator tandem. The prospects for fabricating high efficiency, series connected (i.e., two terminal) InP/Ga(0.47)In(0.53)As monolithic tandem cells are also discussed.

Wanlass, M. W.↗
NASA NTRS1989

Thin film molybdenum silicide as potential temperature sensors for turbine engines

Temperature measurements of Mo-Si-based thin-film resistance thermometers were studied. Annealing in an argon ambient at a temperature above 1000 C for at least 1 h is required to form the stable tetragonal MoSi2 phase. With a crack-free 2-micron-thick AlN barrier layer on top, a sensor was tested up to 1200 C. The resistivity vs temperature characteristic shows the room temperature resistivity and temperature coefficient of resistivity (TCR) of the sensor to be approximately 350 microohm and 0.01195 K, respectively. No film adhesion problems were observed for at least four testing cycles.

Ho, C. H.↗
NASA NTRS1990

An electronically tuned, stable 8415 MHz dielectric resonator FET oscillator for space applications

A voltage-controlled 8415-MHz FET oscillator stabilized by a dielectric resonator is described. The oscillator provides over 3.2-MHz linear electronic tuning range with a flat power output equal to +1.8 dBm (27 C, nominal), a single-sideband noise-to-carrier ratio of -68 dBc/Hz at 1 kHz off carrier, and a frequency-temperature coefficient of 0.54 parts per million/C over a -24 C to 75 C range. The oscillator withstood 150 Krads (Si) of gamma radiation with no significant performance degradation. The overall performance of the FET oscillator is far superior in many ways to that of an equivalent bipolar oscillator for space applications. For space applications, the FET dielectric resonator oscillator (DRO) is preferred over bipolar DRO because of its lower DC power consumption, better thermal frequency stability, linear electronic tunability, and higher RF output power capability.

Mysoor, Narayan R.↗
NASA NTRS1992

User's Manual for Aerofcn: a FORTRAN Program to Compute Aerodynamic Parameters

The computer program AeroFcn is discussed. AeroFcn is a utility program that computes the following aerodynamic parameters: geopotential altitude, Mach number, true velocity, dynamic pressure, calibrated airspeed, equivalent airspeed, impact pressure, total pressure, total temperature, Reynolds number, speed of sound, static density, static pressure, static temperature, coefficient of dynamic viscosity, kinematic viscosity, geometric altitude, and specific energy for a standard- or a modified standard-day atmosphere using compressible flow and normal shock relations. Any two parameters that define a unique flight condition are selected, and their values are entered interactively. The remaining parameters are computed, and the solutions are stored in an output file. Multiple cases can be run, and the multiple case solutions can be stored in another output file for plotting. Parameter units, the output format, and primary constants in the atmospheric and aerodynamic equations can also be changed.

Conley, Joseph L.↗
NASA NTRS1992

The crystallization and crystalline properties of LARC-TPI

LARC-TPI, a thermoplastic polyimide, has been studied in order to develop an understanding of its crystalline phase transition. Our experiments suggest that samples synthesized in different laboratories apparently had different degrees of imidization and their thermal behaviors differed accordingly. When the most crystalline of these polyimides was studied in some detail, we found that it melted irreversibly in that once a sample was completely melted it would not recrystallize. A polymer that did not recrystallize displayed a glass transition, which increased in temperature upon subsequent cooling and reheating. Solubility experiments indicated that heating above the crystalline melting temperature led to network formation in the polymer, a conclusion that is consistent with other behavior just mentioned. Differential calorimetric studies revealed that annealing at slow heating rates or under isothermal conditions resulted in dual melting transitions. These studies, supported by X-ray diffraction results, strongly indicate that the annealing process involves a solid-liquid-solid transformation. From an existing phenomenological model for the kinetics of phase transitions, kinetic parameters for these crystallizations have been evaluated. The Avrami exponents n increased with the annealing temperature in the protocol used in this study. Their values were about 2 or lower, thus indicating that crystallization may have followed a mechanism that included heterogeneous nucleation of a low dimensional order in which all the embryonic crystallites formed at the beginning of the process. A positive temperature coefficient for these crystallizations indicated that diffusion may have had a rate controlling influence and affected the values of n.

Theil, Michael H.↗
NASA NTRS1993

Thermocapillary convection in two immiscible liquid layers with free surface

Thermocapillary convection is studied in two immiscible liquid layers with one free surface, one liquid/liquid interface, and differential heating applied parallel to the interfaces. An analytical solution is introduced for infinite horizontal layers. The defining parameter for the flow pattern is lambda, the ratio of the temperature coefficient of the interfacial tension to that of the surface tension. Four different flow patterns exist under zero gravity conditions. 'Halt' conditions which halt the fluid motion in the lower encapsulated liquid layer have been found. A numerical experiment is carried out to study effects of vertical end walls on the double layer convection in a 2D cavity. The halt condition obtained from the analytical study is found to be valid in the limit of small Reynolds numbers. The flow in the encapsulated liquid layer can be suppressed substantially.

Doi, Takao↗
NASA NTRS1993

Ultrastable reference frequency distribution utilizing a fiber optic link

The Frequency Standards Laboratory at the Jet Propulsion Laboratory (JPL) is responsible for the generation and distribution of ultra-stable reference frequency in NASA's Deep Space Network (DSN). Certain assemblies and components of the Radio Science and VLBI systems are located in the cones of tracking antennas hundreds of meters from the Frequency and Timing Subsystem's frequency standards. The very stringent requirements of these users challenge the performance of state-of-the-art frequency sources as well as the associated signal distribution system. The reference frequency distribution system described is designed around a low temperature coefficient of delay (TCD) optical fiber. On-site measurements of the fiber optic link alone indicate 100 MHz phase noise performance on the order of -120 dBc at 1 Hz from the carrier and Allan deviation on the order of parts in 10(exp 16) at 1000 seconds averaging time. The measured phase noise and stability of the link indicate that the performance characteristics of the hydrogen maser frequency standards are not degraded by the distribution system. Thus, optical fibers and electro-optic devices as distribution media appear to be a viable alternative to the classical coaxial cable distribution systems.

Calhoun, Malcolm↗
NASA NTRS1993

Radiation effects in Ga(0.47)In(0.53)As solar cells

The effects of irradiating Ga(0.47)In(0.53)As p-i-n junctions with 1 MeV electrons were measured using Deep Level Transient Spectroscopy (DLTS) and both dark and illuminated (1 sun, air mass zero (AM0)) current-voltage (I-V) measurements. The I-V measurements were made over the range 100K less than T less than 350K. Temperature coefficients of the Ga(0.47)In(0.53)As photovoltaic parameters are presented which follow the same general behavior as other solar cell materials (e.g. Si and GaAs). Fits of the dark I-V data to the two term diode equation before irradiation were satisfactory, yielding an estimated band-gap energy of 0.79 eV. The recombination component of the dark current was found to increase linearly with fluence. DLTS detected two radiation-induced defect levels one shallow (E(sub c)-0.10 eV) and one near mid-gap (E(sub c)-0.29 eV), and it is the near mid-gap level which is expected to be the cause of the dark current increase. The radiation-induced degradation of the open circuit voltage is shown to be accurately predicted from the dark I-V measurements. The degradation of the open circuit voltage dominated the radiation response of the photovoltaic parameters while the short circuit current was only moderately degraded. This behavior is qualitatively explained in terms of the base thickness and dopant level. Appropriate changes in the device structure are suggested which should increase the radiation resistance. Isochronal thermal annealing induced recovery in the photovoltaic parameters at approximately 400K, coinciding with an annealing stage of the near mid-gap defect level.

Walters, R. J.↗
NASA NTRS1993

Results of thermal vacuum tests for the PASP+ flight modules

The PASP PLUS (Photovoltaic Array Space Power Plus Diagnostics) program is a photovoltaic experiment which will be flown on the Air Force satellite APEX (Advanced Photovoltaic And Electronic Experiment). APEX will be launched with a Pegasus during the summer of 1993. There are two other small experiments on APEX but PASP+ is the largest, uses the most power, and accounts for over 90 percent of the data requirements. The orbit is elliptical with apogee and perigee of 1050 and 190 nautical miles respectively. The inclination is 70 deg. The two main objectives of PASP+ are to determine the interactions between high voltage arrays and the space plasma environment and to determine the radiation damage characteristics of several newer types of solar cells. In order to determine the interactions with the space plasma, several of the individual cell strings will be biased to voltages up to plus or minus 500 V, and leakage currents and arcing rates will be measured. The radiation degradation characteristics will be determined by the continuous monitoring of I-V data for all of the cell strings. As part of an overall testing program, the PASP+ panels and controller were put through a thermal vacuum test in order to check the thermal analysis, obtain temperature coefficients for the individual modules, and have an end-to-end test of the entire PASP+ experiment. This thermal vacuum test is described briefly and the results obtained during that testing are discussed.

Curtis, Henry↗
NASA NTRS1994

InGaAs PV Device Development for TPV Power Systems

Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

Wilt, David M.↗
NASA NTRS1994

Design of high-efficiency, radiation-hard, GaInP/GaAs solar cells

In recently years, Ga(0.5)In((0.5)P/GaAs cells have drawn increased attention both because of their high efficiencies and because they are well suited for space applications. They can be grown and processed as two-junction devices with roughly twice the voltage and half the current of GaAs cells. They have low temperature coefficients, and have good potential for radiation hardness. We have previously reported the effects of electron irradiation on test cells which were not optimally designed for space. From those results we estimated that an optimally designed cell could achieve 20 percent after irradiation with 10(exp 15) cm(exp -2) 1 MeV electrons. Modeling studies predicted that slightly higher efficiencies may be achievable. Record efficiencies for EOL performance of other types of cells are significantly lower. Even the best Si and InP cells have BOL efficiencies lower than the EOL efficiency we report here. Good GaAs cells have an EOL efficiency of 16 percent. The InP/Ga(0.5)In(0.5)As two-junction, two-terminal device has a BOL efficiency as high as 22.2 percent, but radiation results for these cells were limited. In this study we use the previous modeling and irradiation results to design a set of Ga(0.5)In(0.5)P/GaAs cells that will demonstrate the importance of the design parameters and result in high-efficiency devices. We report record AMO efficiencies: a BOL efficiency of 25.7 percent for a device optimized for BOL performance and two of different designs with EOL efficiencies of 19.6 percent (at 10(exp 15) cm(exp -2) 1MeV electrons). We vary the bottom-cell base doping and the top-cell thickness to show the effects of these two important design parameters. We get an unexpected result indicating that the dopant added to the bottom-cell base also increases the degradation of the top cell.

Kurtz, Sarah R.↗
NASA NTRS1994

InGaAs PV device development for TPV power systems

Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 on Indium phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high rack currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

Wilt, David M.↗
NASA NTRS1995

The progress of large area GaInP2/GaAs/Ge triple junction cell development at Spectrolab

In this paper we report the successful fabrication of large area, monolithic triple junction, n on p, GaInP2/GaAs/Ge cells. The highest open circuit voltage and cell efficiency (cell area: 4.078 sq cm) were measured at 2.573 V and 23.3%, respectively, under 1 sun, AMO illumination. To our knowledge, this is the highest single crystal, monolithic, two terminal triple junction cell efficiency demonstrated. In addition, excellent uniformity across a 3 inch diameter Ge substrates has also been achieved. An average cell efficiency of 22.8% across the 3 inch diameter wafer has been measured. We have also successfully fabricated welded cell-interconnect-cover (CIC) assemblies using these triple junction devices. The highest CIC efficiency was 23.2% (bare cell efficiency was 23.3%). The average efficiency for 25 CICs was 21.8%, which is very comparable to the 22.0% average bare cell efficiency before they were fabricated into the CICs. Finally, we have measured temperature coefficient and 1 MeV electron irradiation data. These will be presented in the paper.

Chiang, P. K.↗
NASA NTRS1995

Determination of the electrical conductivity of liquid Ge(0.95)Si(0.05)

We have measured the electrical conductivity of molten germanium-silicon Ge(0.95)Si(0.05) from the liquidus temperature (1050 C) up to 1220 C. The data were acquired with a unique apparatus which utilizes the standard four-probe technique. The basic unit consists of a fused silica enclosure that contains hermetic glass-to-tungsten seals that can support vacuum pressures down to 10(exp -7) Torr. With calibration, the measurement error for the low vapor pressure materials of this study was typically less than 7%. The temperature dependence of the electrical conductivity of a Ge(0.95)Si(0.05) melt was found to vary from approximately 22,300/ohm/cm at the liquidus temperature down to approximately 16,000/ohm/cm at 1220 C. The negative temperature coefficient as well as the magnitude of these data clearly indicate that the molten material is metallic in nature despite the semiconducting properties of the solid.

Rolin, T. D.↗
NASA NTRS1995

A polyimide molecular composite

A polyimide is a hard and sturdy thermoplastic made from the combination of tetracarboxylic dianhydrides and diamines in a polar aprotic solvent. A series of polyimide blends comprising of a tough moldable, wholly aromatic polyimide and a highly crystalline rigid polyimide were prepared. The flexible polyimide was based on LaRC-SI with a 2% offset, and the rigid polyimide as based on para-phenylenediamine and biphenyltetracarboxylic dinnhydride encapped with pthalic anhydride. The polyimide blends were cast as films and cured at 100, 200, and 300 C in air. These films were characterized by finding their glass-transition temperature, melting temperature, coefficient of thermal expansion, tensile modulus, tensile strength, and percent elongation. These characterizations found out which polyimide blend had exceptional mechanical and thermal properties. Experimental results showed the following: (1) A blend with increasing amounts of flexible polyimide produced a better film; (2) A blend with increasing amounts of rigid polyimide produced a brittle film; (3) LaRC-SI (2% offset) tended to phase separate during film casting; (4) Most of the films produced were brittle; and (5) There was an inability to obtain mechanical and thermal properties due to having brittle film. These conclusions demonstrate the difficulty in producing a polyimide blend comprising two physically distinct polyimides. Combining a polysmide with a poly(amic acid) thermosett could be the next phase of research in polyimide synthesis.

Hart, Aprill J.↗
NASA NTRS1999

Modeling of SiC Lateral Resonant Devices Over a Broad Temperature Range

Finite-element analysis (FEA) modal results of 3C-SiC lateral resonant devices anchored to a Si substrate are presented as resonant frequency versus temperature. The suspended elements are etched from a 2 micron, 3C-SiC film grown at 1600 K on a 500 micron-thick, Si substrate. The analysis includes, temperature-dependent properties, shape change due to volume expansion with temperature, and thermal stress caused by differential thermal expansion of different materials. Two designs are considered: type I has anchor locations close to the geometric centroid and a small shuttle; type 11 has a large shuttle with anchors far from the centroid, The resonant frequency decreases approximately 3.5% over a 1000 K temperature increase for the type-I device, and behaves according to theory. The resonant frequency of the type-11 device decreases by 2% over the first 400 K, then rises slightly over the remaining 600 K. This device deviates from theory because of the high thermal stress induced in the beams. The thermal stress is caused by the differential thermal expansion of the suspended element relative to the substrate. The results show that the device geometry must be properly chosen if the resonant frequency of that device will be used to calculate the temperature coefficient of Young's modulus. These results apply only to resonators of one material on a substrate of a different material.

DeAnna, Russell G.↗
NASA NTRS1999

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p(sup +)n Junction Diodes--Part II: Dynamic Breakdown Properties: Dynamic Breakdown Properties - Part 2

This paper outlines the dynamic reverse-breakdown characteristics of low-voltage (<250 V) small-area <5 x 10(exp -4) sq cm 4H-SiC p(sup +)n diodes subjected to nonadiabatic breakdown-bias pulsewidths ranging from 0.1 to 20 microseconds. 4H-SiC diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities approximately five times larger than the average failure power density of reliable silicon pn rectifiers. This result indicates that highly reliable low-voltage SiC rectifiers may be attainable despite the presence of elementary screw dislocations. However, the impact of elementary screw dislocations on other more useful 4H-SiC power device structures, such as high-voltage (>1 kV) pn junction and Schottky rectifiers, and bipolar gain devices (thyristors, IGBT's, etc.) remains to be investigated.

Neudeck, Philip G.↗
NASA NTRS1994

InGaAs PV Device Development for TPV Power Systems

lndium Gallium Arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2% (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8% efficiency under a 1500 K blackbody with a projected efficiency of 29.3%. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8% and 6% respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

Wilt, David M.↗