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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS2017

High Performance High Temperature Thermoelectric Composites with Metallic Inclusions

The present invention provides a composite thermoelectric material. The composite thermoelectric material can include a semiconductor material comprising a rare earth metal. The atomic percent of the rare earth metal in the semiconductor material can be at least about 20%. The composite thermoelectric material can further include a metal forming metallic inclusions distributed throughout the semiconductor material. The present invention also provides a method of forming this composite thermoelectric material.

Ma, James M.↗
NASA NTRS2014

Alumina Paste Sublimation Suppression Barrier for Thermoelectric Device

Alumina as a sublimation suppression barrier for a Zintl thermoelectric material in a thermoelectric power generation device operating at high temperature, e.g. at or above 1000K, is disclosed. The Zintl thermoelectric material may comprise Yb.sub.14MnSb.sub.11. The alumina may be applied as an adhesive paste dried and cured on a substantially oxide free surface of the Zintl thermoelectric material and polished to a final thickness. The sublimation suppression barrier may be finalized by baking out the alumina layer on the Zintl thermoelectric material until it becomes substantially clogged with ytterbia.

Paik, Jong-Ah↗
DOE OSTI2023

Half-Heusler alloys as emerging high power density thermoelectric cooling materials

Abstract To achieve optimal thermoelectric performance, it is crucial to manipulate the scattering processes within materials to decouple the transport of phonons and electrons. In half-Heusler (hH) compounds, selective defect reduction can significantly improve performance due to the weak electron-acoustic phonon interaction. This study utilized Sb-pressure controlled annealing process to modulate the microstructure and point defects of Nb 0.55 Ta 0.40 Ti 0.05 FeSb compound, resulting in a 100% increase in carrier mobility and a maximum power factor of 78 µW cm −1 K −2 , approaching the theoretical prediction for NbFeSb single crystal. This approach yielded the highest average zT of ~0.86 among hH in the temperature range of 300-873 K. The use of this material led to a 210% enhancement in cooling power density compared to Bi 2 Te 3 -based devices and a conversion efficiency of 12%. These results demonstrate a promising strategy for optimizing hH materials for near-room-temperature thermoelectric applications.

36 MATERIALS SCIENCE↗
NASA NTRS2009

Method of Suppressing Sublimation in Advanced Thermoelectric Devices

A method of applying a physical barrier to suppress thermal decomposition near a surface of a thermoelectric material including applying a continuous metal foil to a predetermined portion of the surface of the thermoelectric material, physically binding the continuous metal foil to the surface of the thermoelectric material using a binding member, and heating in a predetermined atmosphere the applied and physically bound continuous metal foil and the thermoelectric material to a sufficient temperature in order to promote bonding between the continuous metal foil and the surface of the thermoelectric material. The continuous metal foil forms a physical barrier to enclose a predetermined portion of the surface. Thermal decomposition is suppressed at the surface of the thermoelectric material enclosed by the physical barrier when the thermoelectric element is in operation.

Sakamoto, Jeffrey S.↗
DOE OSTI2023

ZrCoBi based half Heuslers with high thermoelectric conversion efficiency

A method of thermoelectric power generation by converting heat to electricity via the use of a ZrCoBi-based thermoelectric material, wherein a thermoelectric conversion efficiency of the ZrCoBi-based thermoelectric material is greater than or equal to 7% at a temperature difference of up to 800 K.

Ren, Zhifeng↗
DOE OSTI2022

First-Principles Calculations of Thermoelectric Transport Properties of Quaternary and Ternary Bulk Chalcogenide Crystals

Chalcogenide crystals have a wide range of applications, especially as thermoelectric materials for energy conversion. Thermoelectric materials can be used to generate an electric current from a temperature gradient based on the Seebeck effect and based on the Peltier effect, and they can be used in cooling applications. Using first-principles calculations and semiclassical Boltzmann theory, we have computed the Seebeck coefficient, electrical conductivity, electronic thermal conductivity, power factor, and figure of merit of 30 chalcogenide crystals. A Quantum Espresso package is used to calculate the electronic properties and locate the Fermi level. The transport properties are then calculated using the BoltzTraP code. The 30 crystals are divided into two groups. The first group has four crystals with quaternary composition (A 2 BCQ 4 ) (A = Tl; B = Cd, Hg; C = Si, Ge, Sn; Q = S, Se, Te). The second group contains 26 crystals with the ternary composition (A’B’Q 2 ) (A’ = Ag, Cu, Au, Na; B’ = B, Al, Ga, In; Q = S, Se, Te). Among these 30 chalcogenide crystals, the results for 11 crystals: Tl 2 CdGeSe 4 , Tl 2 CdSnSe 4 , Tl 2 HgSiSe 4 , Tl 2 HgSnS 4 , AuBSe 2 , AuBTe 2 , AuAlTe 2 , AuGaTe 2 , AuInTe 2 , AgAlSe 2 , and AgAlTe 2 are revealed for the first time. In addition, temperature-dependent transport properties of pure and doped AgSbSe 2 and AgSbTe 2 crystals with dopant compositions of AgSb 0.94 Cd 0.06 Te 2 and AgSbTe 1.85 Se 0.15 were explored. These results provide an excellent database for bulk chalcogenides crucial for a wide range of potential applications in renewable energy fields.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1983

Refractory materials for high-temperature thermoelectric energy conversion

Theoretical work of two decades ago adequately explained the transport behavior and effectively guided the development of thermoelectric materials of high conversion efficiencies of conventional semiconductors (e.g., SiGe alloys). The more significant contributions involved the estimation of optimum doping concentrations, the reduction of thermal conductivity by solid solution doping and the development of a variety of materials with ZT approx. 1 in the temperature range 300 K to 1200 K. ZT approx. 1 is not a theoretical limitation although, experimentally, values in excess of one were not achieved. Work has continued with emphasis on higher temperature energy conversion. A number of promising materials have been discovered in which it appears that ZT 1 is realizable. These materials are divided into two classes: (1) the rare-earth chalcogenides which behave as itinerant highly-degenerate n-type semiconductors at room-temperature, and (2) the boron-rich borides, which exhibit p-type small-polaronic hopping conductivity.

Wood, C.↗
NASA NTRS1984

Refractory materials for high-temperature thermoelectric energy conversion

Theoretical work of two decades ago adequately explained the transport behavior and effectively guided the development of thermoelectric materials of high conversion efficiencies of conventional semiconductors (e.g., SiGe alloys). The more significant contributions involved the estimaiation of optimum doping concentrations, the reduction of thermal conductivity by solid solution doping and the development of a variety of materials with ZT approx. 1 in the temperature range 300 K to 1200 K. ZT approx. 1 is not a theoretical limitation although, experimentally, values in excess of one were not achieved. Work has continued with emphasis on higher temperature energy conversion. A number of promising materials have been discovered in which it appears that ZT 1 is realizable. These materials are divided into two classes: (1) the rare-earth chalcogenides which behave as itinerant highly-degenerate n-type semiconductors at room-temperature, and (2) the boron-rich borides, which exhibit p-type small-polaronic hopping conductivity.

Wood, C.↗
NASA NTRS1985

Computerized data acquisition and analysis for measuring thermal diffusivity

JPL has been leading a concentrated effort to develop improved thermoelectric materials for space applications. Thermoelectric generators are an attractive source of electrical energy for space power because of lack of moving parts and slow degradation of performance. Thermoelectric material is characterized by: Seebeck coefficient, electrical resistivity and thermal conductivity. To measure the high temperature thermal conductivity is experimentally very difficult. However, it can be calculated from the specific heat and thermal diffusivity which are easier to measure at high temperatures, especially using the flash method. Data acquisition and analysis for this experiment were automated at JPL using inexpensive microcomputer equipment. This approach is superior to tedious and less accurate manual analysis of data. It is also preferred to previously developed systems utilizing expensive minicomputers or mainframes.

Chmielewski, A.↗
NASA NTRS2014

Uncertainty Analysis of Seebeck Coefficient and Electrical Resistivity Characterization

In order to provide a complete description of a materials thermoelectric power factor, in addition to the measured nominal value, an uncertainty interval is required. The uncertainty may contain sources of measurement error including systematic bias error and precision error of a statistical nature. The work focuses specifically on the popular ZEM-3 (Ulvac Technologies) measurement system, but the methods apply to any measurement system. The analysis accounts for sources of systematic error including sample preparation tolerance, measurement probe placement, thermocouple cold-finger effect, and measurement parameters; in addition to including uncertainty of a statistical nature. Complete uncertainty analysis of a measurement system allows for more reliable comparison of measurement data between laboratories.

Seebeck effect↗
NASA NTRS2009

A Model for Predicting Thermoelectric Properties of Bi2Te3

A parameterized orthogonal tight-binding mathematical model of the quantum electronic structure of the bismuth telluride molecule has been devised for use in conjunction with a semiclassical transport model in predicting the thermoelectric properties of doped bismuth telluride. This model is expected to be useful in designing and analyzing Bi2Te3 thermoelectric devices, including ones that contain such nano - structures as quantum wells and wires. In addition, the understanding gained in the use of this model can be expected to lead to the development of better models that could be useful for developing other thermoelectric materials and devices having enhanced thermoelectric properties. Bi2Te3 is one of the best bulk thermoelectric materials and is widely used in commercial thermoelectric devices. Most prior theoretical studies of the thermoelectric properties of Bi2Te3 have involved either continuum models or ab-initio models. Continuum models are computationally very efficient, but do not account for atomic-level effects. Ab-initio models are atomistic by definition, but do not scale well in that computation times increase excessively with increasing numbers of atoms. The present tight-binding model bridges the gap between the well-scalable but non-atomistic continuum models and the atomistic but poorly scalable ab-initio models: The present tight-binding model is atomistic, yet also computationally efficient because of the reduced (relative to an ab-initio model) number of basis orbitals and flexible parameterization of the Hamiltonian.

Lee, Seungwon↗
NASA NTRS2008

Development Status and Plans of the Advanced Thermoelectric Converter (ATEC) Project

Advances in thermoelectric materials with high ZT in mid-90's, revived interest in advanced thermoelectric materials at DOE, DOD and NASA NASA. JPL, in collaboration with Universities, identified promising high temperature thermoelectric materials for potential use in next generation RTGs nder DOD and NASA funding (1995 to 2005). Based on these advances the ATEC project was initiated in January 2006 to develop an advanced converter by 2010 (10-12% couple efficiency). ATEC is a technology maturation project with an off-ramp to a proposed Advanced RTG (ARTG) providing 6-8 W/kg and 8-10% system efficiency to support potential future SMD missions as early as 2017. In addition, work is continuing on advancing the TE materials technology to support development of an RTG with 12-14 W/kg and 15 to 20% efficiency by 2020.

zintl metallization↗
NASA NTRS2018

Plans and Concepts for a New Generation of RTGs for Planetary Science Missions

Of the six types of radioisotope thermoelectric generators NASA has flown in space, only the Multi-Mission Radioisotope Thermoelectric Generator (MMRTG) is currently available for spaceflight, and it relies on technology first used for RTGs in the 1970s. The MMRTG is a rugged power system capable of delivering 110W at launch. NASA is considering future missions with higher power demands however, and sponsored a study to identify concepts and plans to address those needs. The Director of NASA’s Planetary Sciences Division was briefed on a potential enhancement to the MMRTG in late-2012, just a couple of days after the landing of the Mars Science Laboratory rover, Curiosity, on Mars. NASA subsequently funded system-level engineering and technology maturation tasks for a proposed enhanced MMRTG, or eMMRTG, in fiscal year 2013. There was no plan to build a complete generator, rather the engineering of one, and the transfer of technology from laboratories at the Jet Propulsion Laboratory to industry were begun. NASA has now formed a Project to take the eMMRTG from technology to a qualification unit. This would form the first of a new generation of RTGs in 50 years. NASA has also formed a Project for a Next-Generation RTG concept based upon a study led by this author and a large team. NASA’s Radioisotope Power Systems (RPS) Program set the objective for the study to explore what possible options NASA has for Next-Generation-RTGs. The scope and breadth of the study included many possible destinations within the solar system, and traded a variety of RTG conceptual designs, and risk rated a variety of thermoelectric materials and couple configurations. Requirements were defined for the RTG concepts, a variety of thermoelectric materials were evaluated to find the most mature candidates, and performance was estimated for each RTG concept that could use the most mature of these new thermoelectric materials. The study relied upon mission concepts outlined in the latest Planetary Science Decadal Survey (2011), other more recent mission studies completed throughout the agency, and recent analyses of potential missions to ocean worlds to identify requirements that were not applied to previous RTGs but might prove valuable to these NG-RTGs. RTG concepts with maximal potential utility were identified as being modular and ranging in power output from 50 to 500W. A variety of RTG design concepts with several distinguishing characteristics were formulated. The plans and concepts for a new generation of RTGs (the eMMRTG and NG-RTG) will be discussed.

Woerner, David F.↗
DOE OSTI2020

Ultralow thermal conductivity from transverse acoustic phonon suppression in distorted crystalline α-MgAgSb

Low thermal conductivity is favorable for preserving the temperature gradient between the two ends of a thermoelectric material, in order to ensure continuous electron current generation. In high-performance thermoelectric materials, there are two main low thermal conductivity mechanisms: the phonon anharmonic in PbTe and SnSe, and phonon scattering resulting from the dynamic disorder in AgCrSe2 and CuCrSe2, which have been successfully revealed by inelastic neutron scattering. Using neutron scattering and ab initio calculations, we report here a mechanism of static local structure distortion combined with phononanharmonic-induced ultralow lattice thermal conductivity in α-MgAgSb. Since the transverse acoustic phonons are almost fully scattered by the compound’s intrinsic distorted rocksalt sublattice, the heat is mainly transported by the longitudinal acoustic phonons. The ultralow thermal conductivity in α-MgAgSb is attributed to its atomic dynamics being altered by the structure distortion, which presents a possible microscopic route to enhance the performance of similar thermoelectric materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1994

High-Performance Thermoelectric Semiconductors

Figures of merit almost double current state-of-art thermoelectric materials. IrSb3 is semiconductor found to exhibit exceptional thermoelectric properties. CoSb3 and RhSb3 have same skutterudite crystallographic structure as IrSb3, and exhibit exceptional transport properties expected to contribute to high thermoelectric performance. These three compounds form solid solutions. Combination of properties offers potential for development of new high-performance thermoelectric materials for more efficient thermoelectric power generators, coolers, and detectors.

Fleurial, Jean-Pierre↗
NASA NTRS2003

Surface-Micromachined Planar Arrays of Thermopiles

Planar two-dimensional arrays of thermopiles intended for use as thermal-imaging detectors are to be fabricated by a process that includes surface micromachining. These thermopile arrays are designed to perform better than do prior two-dimensional thermopile arrays. The lower performance of prior two-dimensional thermopile arrays is attributed to the following causes: The thermopiles are made from low-performance thermoelectric materials. The devices contain dielectric supporting structures, the thermal conductances of which give rise to parasitic losses of heat from detectors to substrates. The bulk-micromachining processes sometimes used to remove substrate material under the pixels, making it difficult to incorporate low-noise readout electronic circuitry. The thermoelectric lines are on the same level as the infrared absorbers, thereby reducing fill factor. The improved pixel design of a thermopile array of the type under development is expected to afford enhanced performance by virtue of the following combination of features: Surface-micromachined detectors are thermally isolated through suspension above readout circuitry. The thermopiles are made of such high-performance thermoelectric materials as Bi-Te and Bi-Sb-Te alloys. Pixel structures are supported only by the thermoelectric materials: there are no supporting dielectric structures that could leak heat by conduction to the substrate.

Foote, Marc C.↗