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At least 1,441 records · Page 80

Ion Implantatiion Improves Bearing-Surface Properties

Selected ions fired into rolling elements to increase resistance to rolling-contact fatique. Mask strips confine implantation to 105 degree arcs on cylindrical surfaces. Specimens kept cool by copper block through which refrigerant is circulated. Implanting nitrogen or titanium ions in metals improves resistance to fatigue, corrosion, and wear without altering bulk properties. Unlike such surface treatments as conventional nitriding, conventional carburizing, and coating, ion implantation is low-temperature process, requires no finishing operations, and produces highly-alloyed surface layer. Implantation process also helps conserve such strategic materials as chromium and cobalt by using them only where needed.

Misra, M. S.↗

Phase transformations in ion-irradiated silicides

The present investigation has three objectives. The first is concerned with the phase transformation of CoSi2 under ion implantation and the subsequent crystallization characteristics during annealing, taking into account epitaxial and nonepitaxial recrystallization behavior. The second objective is related to a study of the general trend of implantation-induced damage and crystallization behavior for a number of commonly used silicides. The last objective involves a comparison of the recrystallization behavior of cosputtered refractory silicides with that of the ion-implanted silicides. It was found that epitaxial regrowth of ion-irradiated CoSi2 occurred for samples with an epitaxial seed left at the Si/CoSi2 interface. A structural investigation of CoSi2 involving transmission electron microscopy (TEM) showed that after high-dose implantation CoSi2 is amorphous.

Hewett, C. A.↗

Amorphization and recrystallization of epitaxial ReSi2 films grown on Si(100)

The effects of implantation damage and the chemical species of the implant on structural and electrical properties of epitaxial ReSi2 films on Si(100) implanted with Si-28 or Ar-40 ions, at doses ranging from 10 to the 13th/sq cm to 10 to the 15th/sq cm, were investigated using the backscattering spectrometry, XRD, and the van der Pauw techniques. Results showed that ion implantation produces damage in the film, which increases monotonically with dose; the resistivity of the film decreases monotonically with dose.

Kim, Kun HO↗

Shape optimization of tibial prosthesis components

NASA technology and optimal design methodologies originally developed for the optimization of composite structures (engine blades) are adapted and applied to the optimization of orthopaedic knee implants. A method is developed enabling the shape tailoring of the tibial components of a total knee replacement implant for optimal interaction within the environment of the tibia. The shape of the implant components are optimized such that the stresses in the bone are favorably controlled to minimize bone degradation, to improve the mechanical integrity of the implant/interface/bone system, and to prevent failures of the implant components. A pilot tailoring system is developed and the feasibility of the concept is demonstrated and evaluated. The methodology and evolution of the existing aerospace technology from which this pilot optimization code was developed is also presented and discussed. Both symmetric and unsymmetric in-plane loading conditions are investigated. The results of the optimization process indicate a trend toward wider and tapered posts as well as thicker backing trays. Unique component geometries were obtained for the different load cases.

Saravanos, D. A.↗

Helium and neon in lunar ilmenites of different antiquities

Helium and neon were extracted from individual lunar ilmenite grains, approximately 100 micrometers in diameter, using a pulsed step-heating technique. Grains from lunar samples 71501 and 79035, believed to have been exposed to solar corpuscular radiation at greatly different times, were studied. The results found were consistent with the hypothesis that in addition to solar-wind-implanted gas, a second more deeply implanted component was present in both species of grains. Average isotopic ratios were determined giving equal weight to each of the particles. As found in depth studies employing chemical etching, both the He-3/He-4 and Ne-20/Ne-22 ratios were lower in the more deeply implanted gas than in the solar wind component. The He-3/He-4 ratio in the solar wind component of the more ancient grains was lower than that in the more recently exposed ones, whereas no difference was found for the more deeply embedded He. In the deeply embedded component of the ancient grains, the He-4/Ne-20 ratio was approx. 2x that found in the more recently exposed grains. In the shallowly implanted component, the ratio varied greatly from grain to grain, preventing comparison with the solar wind elemental composition.

Nier, A. O.↗

Diffusion of Na and K in the uppermost regolith of Mercury

We examine the conditions under which ions impacting the Hermean surface can act as a regional source of enhanced atmospheric column through ion implantation and subsequent release at the surface. At most latitudes, energetic (a few keV) Na or K ions which impact the nightside surface, are released quickly (well before noon) upon warming of the surface. We show that the relative sunrise/sunset difference produced by ion implantation is ((n)(sub SR) - (n)(sub SS)/(n)(sub Ave) = f, where f is the fraction of the photo-ions recycled, (n)(sub SR) is the average zenith column above the sunrise portion of the illuminated hemisphere, (n)(sub SS) is the average zenith column in the sunset portion, and (n)(sub Ave) is the average column over the sunlit disk. Thus, to produce a large sunrise/sunset difference via ion implantation and subsequent release requires efficient (close to total) recycling. We show that the most extensive set of available data reduced to Na column abundance does not show any sunrise enhancement. We argue that the K data do not permit an unambiguous interpretation in favor of sunrise/sunset differences. We further find that if an efficient surface loss process for the alkali is not operating after sunrise, the initial Na and K distribution will relax into the bulk of the solid. Preserved abundance gradients of Na and K in lunar glasses that the Arrhenius coefficients for impact glasses are likely more modest than those for laboratory glasses derived from rock by nonimpact processes, but the effect of the more modest diffusion rates is only to delay the efficient loss of Na by a few Earth days. We argue that implantation can lead to observable regional increases in the observed Na or K column densities only if it occurs at very high latitudes, where diffusion is slow. It is typically lower energy ions which impact at high latitude and these are both more numerous than the high energy ions and possess smaller average penetration depths; thus there are additional reasons to favor a high-latitude locus for any possible prompt return related increases in zenith column. We find that we cannot rule out sputtering as a source process, as the low-energy ions are efficient sputterers. Finally, we argue that the observed Na/K ratio in the atmopshere may be the expression of their different asymptotic rates of loss from the interiors of the regolith grains. If so, this allows us to fix the importance of sputtering and photon stimulated desorption relative to impact vaporization.

Killen, R. M.↗

Three Paradigms of Lunar Regolith Evolution

Integration of diverse datasets on the Moon may render some paradigms of lunar science either better-defended or vulnerable. We will consider three paradigms commonly used for understanding the processes of lunar regolith evolution in light of new and accumulated data. Our premise is that all data-sets should converge to a single interpretation if a concept or model is to be accepted as a paradigm. If a convergence is lacking, the paradigm needs fresh scrutiny. SteadyState: Lunar regolith evolution is currently understood in terms of comminution, agglutination, and replenishment as described by McKay and coworkers). Briefly, the model envisages continued micrometeoritic bombardment to comminute exposed soil particles to finer sizes while continued agglutination consumes finer sizes to produce larger constructional particles. Eventually, a balance between these two opposing processes achieves a steady state; soils at steady state maintain their mean grain size (M(sub z)). Episodic higher-energy impacts excavate fresh coarse material from below the soil cover, disturb the steady state, and restart the process to achieve a new steady state. It follows that the thickness of the regolith at any site would control the frequency of replenishment; indeed, the thickness of the regolith at Apollo landing sites was predicted by McKay et al. from the average M(sub z) of local soils. However, replenishment may come also from disintegrating boulders and cobbles at the lunar surface, and rates of comminution and agglutination may depend on the properties of target material. Regression between M(sub z) and I(sub s)/Fe(sup 0) (a measure of maturity or total surface exposure) of Apollo soils at different sites shows the following relations and estimated M(sub z) at a high maturity of I(sub s)/Fe(sup 0)= 100. It is possible that Apollo 12 and 15 sites have the thickest regolith and the Apollo 16 site has the thinnest. It is also possible that Apollo 12 and 15 basalts are comminuted faster than Apollo 16 highland rocks and Apollo 14 and 17 soils are products of mixed parentage. If a soil becomes continually finer as it matures until agglutination catches up, and if comminution is differential-dependent on the physical properties of the constituents, then the composition of the bulk soil has to match the composition of some "fulcrum" grain size fraction, say X Grain size fractions >X and <X will complement each other; their mass balance is the bulk soil. It appears that the 10-20-micron size fraction may be the fulcrum. In general, trace-element chemistry and IR reflectance spectra of this size fraction are closest to that of the bulk soil, regardless of maturity that is surprising. Disaggregated products of regolith breccias may also show similar relationships. If the 10-20 gm is the fulcrum (i.e., X as above) for many soil properties (e.g., major element composition, FMR, solar-wind-implanted elements), then this may be the ultimate mean grain size of lunar soils at steady state. However, different properties of soils may find steady states at different grain size fractions. The steady state of solar-wind-implanted elements, on the other hand, will climb up the grain-size scale as agglutinates transfer surface-correlated components into volume correlated components until a saturation level is reached or the rates of replenishment and implantation become equal. The same will be the case with vapor-deposited reduced metals as they too are incorporated inside constructional particles. Properties that are directly affected by soil-maturation processes will thus have different pathways of achieving steady states. Maturity, i.e., cumulative surface exposure, of lunar soils is best quantified by the amount of nanophase superparamagnetic Fe(sup 0) (np-Fe(sup 0)) normalized to Fe content (=I(sub s)/Fe(sup 0). The majority consensus (paradigm?) for the production of np-Fe(sup 0) is associated with the production of agglutinates. Because large doses of solar-wind H are implanted in all lunar soils upon exposure, any melting (e.g., during agglutinate production) triggers a chemical reduction of Fe-bearing minerals resulting in np-Fe(sup 0) production. The quantity of np-Fe(sup 0) is thus dependent on melting events, (i.e., exposure), and limited by the Fe content of the soil. All freshly produced np-Fe(sup 0) resides in agglutinitic glass, as new TEM images show. Apparently, the correction procedure developed by Lucey et al. to estimate the Fe content of the lunar surface from IR-reflectance spectra depends on accepting the above. However, the process of producing np-Fe(sup 0) may be physical rather than chemical. All np-Fe(sup 0) could be deposits from a vapor produced by micrometeoritic impact on lunar soils. If metal-O bonds in target phases are broken, O being "most volatile" will escape leaving an O-deficient vapor to facilitate the production of np-Fe(sup 0). If so, the quantity of np-Fe(sup 0) is dependent on the vaporizing events, (i.e., exposure), and limited by the efficiency of breaking metal-O bonds and the escape of 0. To the extent that strengths of metal-O bonds are dependent on the local crystal field, production of np-Fe(sup 0) may be limited by the mineral composition of target soils and not by their total Fe content. According to this model, vapor-deposited np-Fe(sup 0) should be found at any retentive sites on lunar soil grains. Indeed, TEM images show np-Fe(sup 0) on plagioclase and ilmenite. Incorporation of such pre-irradiated np-Fe(sup 0)-bearing grains into agglutinates may account for eventual increased emplacement of np-Fe(sup 0) in agglutinates. Such a paradigm shift in understanding the origin of np-Fe(sup 0) will raise questions ranging from the unquestionable use of Is/FeO as the universal maturity parameter of lunar soils to global elemental maps of the Moon from remote-sensing data. Additional information is contained in the original.

Basu, A.↗

Behavioral and Physiological Analyses of Parturition In Pregnant Rats: Insights Derived from Intrauterine Telemetry

During labor and birth, fetuses are exposed to considerable physical stimulation associated with labor contractions and expulsion from the womb These forces are important for the neonates' adaptation to tile extrauterine environment. To further our understanding of the relationship between labor and postpartum outcome, we developed a novel method for measuring intrauterine pressure (IUP) in freely-moving, late pregnant and parturient rats that enables us to make precise, reliable measures of the forces experienced by rat fetuses during parturition. A small (1.25 x 4 cm) telemetric blood pressure sensor was fitted within a fluid-filled balloon, similar in size to a full term rat fetus. On Gestational day (G) 19 of the rats' 22/23 day pregnancy, each dam was anesthetized and a balloon/sensor unit surgically implanted within the uterus following removal of two fetuses. Comparisons were made between sensor-implanted dams (IMPL) and a control conditions: 1) LAP-R, laparotomy with two fetuses removed or 2) LAP-NR, laparotomy with no fetuses removed. IUP signals were sampled at 10s intervals from the IMPL dams during labor and birth. Dams in all three conditions were videorecorded enabling us to analyze the effect of the implant on behavioral expressions of parturition. Contraction frequency, duration, pup-to-pup birth intervals and pup-oriented activities of the dams measured from one hour prior to the first pup birth until the birth of the third pup were unaffected by the sensor implant. Intrauterine telemetry of freely-moving dams offers significant advantages over conventional hardwired IUP measurement techniques. These findings establish and validate intrauterine telemetry as a reliable, non-invasive technique for quantifying pressures associated with parturition.

Villareal, J.↗

Compact Radiative Control Structures for Millimeter Astronomy

We have designed, fabricated, and tested compact radiative control structures, including antireflection coatings and resonant absorbers, for millimeter through submillimeter wave astronomy. The antireflection coatings consist of micromachined single crystal silicon dielectric sub-wavelength honeycombs. The effective dielectric constant of the structures is set by the honeycomb cell geometry. The resonant absorbers consist of pieces of solid single crystal silicon substrate and thin phosphorus implanted regions whose sheet resistance is tailored to maximize absorption by the structure. We present an implantation model that can be used to predict the ion energy and dose required for obtaining a target implant layer sheet resistance. A neutral density filter, a hybrid of a silicon dielectric honeycomb with an implanted region, has also been fabricated with this basic approach. These radiative control structures are scalable and compatible for use large focal plane detector arrays.

Brown, Ari D.↗

CMOS Imager Has Better Cross-Talk and Full-Well Performance

A complementary metal oxide/semiconductor (CMOS) image detector now undergoing development is designed to exhibit less cross-talk and greater full-well capacity than do prior CMOS image detectors of the same type. Imagers of the type in question are designed to operate from low-voltage power supplies and are fabricated by processes that yield device features having dimensions in the deep submicron range. Because of the use of low supply potentials, maximum internal electric fields and depletion widths are correspondingly limited. In turn, these limitations are responsible for increases in cross-talk and decreases in charge-handling capacities. Moreover, for small pixels, lateral depletion cannot be extended. These adverse effects are even more accentuated in a back-illuminated CMOS imager, in which photogenerated charge carriers must travel across the entire thickness of the device. The figure shows a partial cross section of the structure in the device layer of the present developmental CMOS imager. (In a practical imager, the device layer would sit atop either a heavily doped silicon substrate or a thin silicon oxide layer on a silicon substrate, not shown here.) The imager chip is divided into two areas: area C, which contains readout circuits and other electronic circuits; and area I, which contains the imaging (photodetector and photogenerated-charge-collecting) pixel structures. Areas C and I are electrically isolated from each other by means of a trench filled with silicon oxide. The electrical isolation between areas C and I makes it possible to apply different supply potentials to these areas, thereby enabling optimization of the supply potential and associated design features for each area. More specifically, metal oxide semiconductor field-effect transistors (MOSFETs) that are typically included in CMOS imagers now reside in area C and can remain unchanged from established designs and operated at supply potentials prescribed for those designs, while the dopings and the lower supply potentials in area I can be tailored to optimize imager performance. In area I, the device layer includes an n+ -doped silicon layer on which is grown an n-doped silicon layer. A p-doped silicon layer is grown on top of the n -doped layer. The total imaging device thickness is the sum of the thickness of the n+, n, and p layers. A pixel photodiode is formed between a surface n+ implant, a p implant underneath it, the aforementioned p layer, and the n and n+ layers. Adjacent to the diode is a gate for transferring photogenerated charges out of the photodiode and into a floating diffusion formed by an implanted p+ layer on an implanted n-doped region. Metal contact pads are added to the back-side for providing back-side bias.

Pain, Bedabrata↗

Laser Subdivision of the Genesis Concentrator Target Sample 60000

The Genesis Allocation Committee received a request for ~ 1 square centimeter of the diamond-like-carbon (DLC) concentrator target for the analysis of solar wind nitrogen isotopes. The target consists of a single crystal float zone (FZ) silicon substrate having a thickness on the order of 550 micrometers with a 1.5-3.0 micrometer-thick coating of DLC on the exposed surface. The solar wind is implanted shallowly in the front side DLC. The original target was a circular quadrant with a radius of 3.1 cm; however, the piece did not survive intact when the spacecraft suffered an anomalous landing upon returning to Earth on September 8, 2004. An estimated 75% of the DLC target was recovered in at least 18 fragments. The largest fragment, Genesis sample 60000, has been designated for this allocation and is the first sample to be subdivided using our laser scribing system Laser subdivision has associated risks including thermal diffusion of the implant if heating occurs and unintended breakage during cleavage. A careful detailed study and considerable subdividing practice using non-flight FZ diamond on silicon, DOS, wafers has considerably reduced the risk of unplanned breakage during the cleaving process. In addition, backside scribing reduces the risk of possible thermal excursions affecting the implanted solar wind, implanted shallowly in the front side DLC.

Lauer, Howard V., Jr.↗

TEM characterization of a simultaneously neutron-irradiated and helium-injected PM2000 ODS alloy

Transmission electron microscopy (TEM) discs of PM2000 were coated on one side with a ~4 µm thick NiAl film and irradiated in HFIR to a neutron displacement damage dose of 21.2 dpa at 500°C. The dpa are primarily produced by fast neutrons, while the in situ He injection (ISHI) to 1230 appm derives from the thermal neutron two-step 59 Ni(n,α) reaction. A uniform He injection profile extends up to about 8 µm below the NiAl coating, hence the remaining material experiences only dpa damage (21.2 dpa at 500°C). This report summarizes analytical TEM analyses to compare the two different regions, i.e., simultaneous He-injection/displacement damage versus displacement damage only, or high and very low He/dpa ratios, respectively. TEM analyses of the He implanted region reveals a high density of small (<2 nm) He bubbles predominantly associated with dislocation loops in the matrix. Because of a very large grain size, no grain or subgrain boundaries were observed in the samples prepared by focused ion beam (FIB) micromachining. The only voids formed were associated with large ODS particles, all of which were amorphous, irrespective of particle size and level of He. The ODS particles range in size from 15-30 nm, and most particles have a single faceted void attached to it that ranges in size from 5 to 15 nm. On the non-implanted side of the sample, no He bubbles could be detected, and faceted voids were found on ~10% of the ODS particles. The He-implanted side contains both <100>{100} and ½<111>{111} dislocation loops and a low density of line dislocations, whereas the un-implanted side possesses predominantly line dislocations with a lower density of dislocation loops. In both regions, nanoscale fcc precipitates exhibiting a cube-on-cube orientation relationship with the bcc matrix were observed. Chemical analysis using energy dispersive x-ray spectroscopy (EDS) indicates this phase is rich in Al and Ti. It was also noted that substantial Cr segregation occurs around the dislocation loops, concurrent with Fe depletion. The clusters of fcc precipitates that do not appear to be associated with the existing loops or line dislocations. The amorphous Y-Al-O particles contain a high Al concentration (>20 at%) and Cr segregation/Fe-depletion at the periphery.

Jung, Hee Joon↗

Modification of electrical properties of topological insulators

Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Rapid pulse annealing of CdZnTe detectors for reducing electronic noise

A combination of doping, rapid pulsed optical and/or thermal annealing, and unique detector structure reduces or eliminates sources of electronic noise in a CdZnTe (CZT) detector. According to several embodiments, methods of forming a detector exhibiting minimal electronic noise include: pulse-annealing at least one surface of a detector comprising CZT for one or more pulses, each pulse having a duration of .about.0.1 seconds or less. The at least one surface may optionally be ion-implanted. In another embodiment, a CZT detector includes a detector surface with two or more electrodes operating at different electric potentials and coupled to the detector surface; and one or more ion-implanted CZT surfaces on or in the detector surface, each of the one or more ion-implanted CZT surfaces being independently connected to one of the two or more electrodes and the surface of the detector. At least two of the ion-implanted surfaces are in electrical contact.

47 OTHER INSTRUMENTATION↗

Plasma process optimization for N-type doping applications

Plasma doping (PLAD) has been adopted across the implant technology space and into high volume production for both conventional DRAM and NAND doping applications. PLAD has established itself as an alternative to traditional ion implantation by beamline implantation. The push for high doping concentration, shallow doping depth, and conformal doping capability expand the need for a PLAD solution to meet such requirements. The unique doping profile and doping characteristics at high dose rates allow for PLAD to deliver a high throughput, differentiated solution to meet the demand of evolving transistor technology. In the PLAD process, ions are accelerated to the wafer as with a negative wafer bias applied to the wafer. Competing mechanisms, such as deposition, sputtering, and etching inherent in plasma doping require unique control and process optimization. In this work, we look at the distinctive process tool control and characterization features which enable an optimized doping process using n-type (PH{sub 3} or AsH{sub 3}) chemistries. The data in this paper will draw the relationship between process optimization through plasma chemistry study to the wafer level result.

36 MATERIALS SCIENCE↗

Thermoelectric Properties of Nanocrystalline Silicon Films Prepared by Hot-Wire and Plasma-Enhanced Chemical-Vapor Depositions

We report thermoelectric measurements over a temperature range of 80 K to 300 K of heavily boron-doped nanocrystalline silicon films prepared by hot-wire and plasma-enhanced chemical-vapor depositions. The nanocrystalline silicon films were doped by either gaseous deposition precursors or post-deposition ion implantation, resulting in boron concentrations ranging from 1 -2 x 10 20 cm -3 to 3 x 10 21 cm -3 . Reasonable values of the Seebeck coefficient and electrical conductivity were obtained at 300 K, comparable to many other research work. We also report thermal conductivity measurements on these films before doping, which we use to estimate their prospective thermoelectric efficiency. These measurements show values as low as 0.76 W/mK at 300 K which depend highly upon the grain sizes of the nc-Si films. We find that post-deposition doping by ion-implantation is more effective at enhancing the power factor than gaseous doping, and the power factor is only weakly dependent upon doping concentration for the films doped by ion implantation. We conclude that improvements of the thermoelectric efficiency of nc -Si films may depend more on a reduction of their thermal conductivity than doping optimization. The small grain sizes and the low thermal conductivity of the undoped nc -Si films accomplished in this work are therefore encouraging developments.

14 SOLAR ENERGY↗

Electrochemical Behavior of Biomedical Titanium Alloys Coated with Diamond Carbon in Hanks’ Solution

Biomedical implants in the knee and hip are frequent failures because of corrosion and stress on the joints. To solve this important problem, metal implants can be coated with diamond carbon, and this coating plays a critical role in providing an increased resistance to implants toward corrosion. In this study, we have employed diamond carbon coating over Ti-6Al-4V and Ti-13Nb-13Zr alloys using hot filament chemical vapor deposition method which is well-established coating process that significantly improves the resistance toward corrosion, wears and hardness. The diamond carbon-coated Ti-13Nb-13Zr alloy showed an increased microhardness in the range of 850 HV. Electrochemical impedance spectroscopy and polarization studies in SBF solution (simulated body fluid solution) were carried out to understand the in vitro behavior of uncoated as well as coated titanium alloys. The experimental results showed that the corrosion resistance of Ti-13Nb-13Zr alloy is relatively higher when compared with diamond carbon-coated Ti-6Al-4V alloys due to the presence of β phase in the Ti-13Nb-13Zr alloy. Electrochemical impedance results showed that the diamond carbon-coated alloys behave as an ideal capacitor in the body fluid solution. Moreover, the stability in mechanical properties during the corrosion process was maintained for diamond carbon-coated titanium alloys.

36 MATERIALS SCIENCE↗

Metal hypersensitivity in the context of connective tissue disease – An opportunity for practice prevention

Highlights: • Metal implants are association with metal hypersensitivity reactions of the skin. • American Contact Dermatitis Society endorses nickel allergy testing. • Metal dental appliances may trigger cutaneous reactions. • Alternative include stainless steel, fiber composite, plastic, and resin-coated. • Alternatives may improve symptoms of fibromyalgia and connective tissue disease. Metal hypersensitivity reactions (MHR) are not associated with metal containing orthodontic implants unless there is a positive history of dermatitis from a high nickel-release item (piercing post, earring, watch). We wish to present this letter to highlight evidence surrounding orthodontic-related nickel hypersensitivity and to bring to the readers attention current American Contact Dermatitis Society (ACDS) guidelines that endorse the importance of addressing metal hypersensitivity reactions in the setting of implantable dental devices.

54 ENVIRONMENTAL SCIENCES↗