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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,441 records · Page 80
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Effect of substrate temperature and gas flow ratio on the nanocomposite TiAlBN coating

Nanocomposite TiAlBN (nc-TiAlBN) coatings were successfully deposited via RF magnetron sputtering by varying the nitrogen-to-total gas flow ratio (R{sub N}), and substrate temperature (T{sub S}). All coatings were deposited on AISI 316 substrates using single Ti-Al-BN hot-pressed disc as a target. The grain size, phases, and chemical composition of the coatings were evaluated using glancing angle X-ray diffraction analysis (GAXRD) and X-ray photoelectron spectroscopy (XPS). Results showed that the grains size of the deposited nc-TiAlBN coatings were in the range of 3.5 to 5.7 nm and reached a nitride saturation state as early as 15 % R{sub N}. As the nitrogen concentration decreases, boron concentration increased from 9 at.% to 16.17 at.%. and thus, increase the TiB{sub 2} phase within the coatings. The T{sub S}, however, showed no significant effect either on the crystallographic structure, grain size, or in the chemical composition of the deposited nc-TiAlBN coating.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Synthesis micro-scale boron nitride nanotubes at low substrate temperature

High temperature synthesis methods produce defects in 1D nanomaterials, which ultimately limit their applications. We report here the synthesis of micro-scale boron nitride nanotubes (BNNT) at low substrate temperature (300 {sup o}C) using a pulsed CO{sub 2} laser deposition technique in the presence of catalyst. The electron microscopic analyses have shown the nanotubes distributed randomly on the surface of the substrate. The average diameter (∼0.25 μm) of a nanotube, which is the highest reported value to date, is estimated by SEM data and confirmed by TEM measurements. These nanotubes are promising for high response deep-UV photo-luminescent devices. A detailed synthesis mechanism is presented and correlated with the experimental results.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates

Air-void structure was introduced in GaN-based blue light-emitting diodes (LED) with one-step growth on periodic laser drilling patterned sapphire substrate, which free of any photolithography or wet/dry etching process. The influence of filling factors (FF) of air-void on crystal quality and optical performance were investigate. Transmission electron microscopy images and micro-Raman spectroscopy indicated that the dislocation was bended and the partially compressed strain was released. When FF was 55.43%, compared with the LED structure grown on flat sapphire substrate, the incorporation of air-void was observed to reduce the compressed stress of ∼20% and the luminance intensity has improved by 128%. Together with the simulated reflection intensity enhancement by finite difference time-domain (FDTD) method, we attribute the enhanced optical performance to the combined contribution of strong back-side light reflection of air-void and better GaN epitaxial quality. This approach provides a simple replacement to the conventional air-void embedded LED process.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Spin relaxation in graphene nanoribbons in the presence of substrate surface roughness

In this work, spin transport in corrugated armchair graphene nanoribbons (AGNRs) is studied. We survey combined effects of spin-orbit interaction and surface roughness, employing the non-equilibrium Green's function formalism and multi-orbitals tight-binding model. Rough substrate surfaces have been statistically generated and the hopping parameters are modulated based on the bending and distance of corrugated carbon atoms. The effects of surface roughness parameters, such as roughness amplitude and correlation length, on spin transport in AGNRs are studied. The increase of surface roughness amplitude results in the coupling of σ and π bands in neighboring atoms, leading to larger spin flipping rate and therefore reduction of the spin-polarization, whereas a longer correlation length makes AGNR surface smoother and increases spin-polarization. Moreover, spin diffusion length of carriers is extracted and its dependency on the roughness parameters is investigated. In agreement with experimental data, the spin diffusion length for various substrate ranges between 2 and 340 μm. Our results indicate the importance of surface roughness on spin-transport in graphene.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

We report on realization of the InGaAs/GaAs/AlGaAs quantum well laser grown by metallorganic chemical vapor deposition on a virtual Ge-on-Si(001) substrate. The Ge buffer layer has been grown on a nominal Si(001) substrate by solid-source molecular beam epitaxy. Such Ge buffer possessed rather good crystalline quality and smooth surface and so provided the subsequent growth of the high-quality A{sub 3}B{sub 5} laser structure. The laser operation has been demonstrated under electrical pumping at 77 K in the continuous wave mode and at room temperature in the pulsed mode. The emission wavelengths of 941 nm and 992 nm have been obtained at 77 K and 300 K, respectively. The corresponding threshold current densities were estimated as 463 A/cm{sup 2} at 77 K and 5.5 kA/cm{sup 2} at 300 K.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Optical properties of VO{sub 2} films at the phase transition: Influence of substrate and electronic correlations

Thin films of VO{sub 2} on different substrates, Al{sub 2}O{sub 3} and SiO{sub 2}/Si, have been prepared and characterized from room temperature up to 360 K. From the band structure in the rutile metallic phase and in the monoclinic insulating phase, the optical properties are calculated and compared with reflection measurements performed as a function of temperatures. Various interband transitions can be assigned and compared with previous speculations. We extract the parameters of the metallic charge carriers that evolve upon crossing the insulator-to-metal phase transition and find effects by the substrate. The influence of electronic correlations becomes obvious at the phase transition.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤500 nm) were processed in a silicon oxide (SiO{sub 2}) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Laser-induced modification of graphene in the presence of ethanol on a graphene – substrate interface

We have studied the effect that the substitution of an organic substance (ethanol) for water adsorbate on a CVD graphene–SiO{sub 2}/Si interface has on the laser-induced modification of graphene and graphene structures on the SiO{sub 2} film. Scanning probe microscopy has been used to analyse changes in the electronic properties of graphene structures on a hydrophilic substrate in the presence of ethanol and as a result of a laser-induced spatial redistribution of a water–alcohol adsorbate on the interface. It has been demonstrated experimentally that ethanol substitution for water adsorbate leads to an increase in the surface potential of the graphene, which is equivalent to a reduction in its work function with respect to the original level under normal conditions at a relative humidity of air from 30% to 60%. In the laser irradiation zone, we observe an additional increase in surface potential by 30–50 mV. Thus, ethanol makes it possible to tune the laser-induced electronic properties of graphene on a substrate. In addition, it has been shown that the intercalation of ethanol molecules leads to severe temporal instability of the physical properties of graphene structures produced by local laser irradiation. We have demonstrated the possibility of information ‘rewriting’ by low-intensity laser pulses in microregions with a changed surface potential in the presence of ethanol. (interaction of laser radiation with matter. laser plasma)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Modification of a graphene – copper substrate in vacuum by femtosecond laser radiation

The effect of intense femtosecond laser radiation on single-layer graphene fixed on a copper fine-meshed grid is studied using a compact femtosecond electron diffractometer. A modification of the graphene – copper substrate is found. The composition of the resulting compounds is analysed. It is shown that the main new products are copper oxides. The prospects of using such a substrate in the method of ultrafast electron diffraction and microscopy are analysed. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

NHC-based Self-assembled Monolayers on Solid Gold Substrates

Thin films of 1,3-diethylbenzimidazol-2-ylidene (BIEt) were fabricated from THF solution on solid gold substrates and characterised by high-resolution X-ray photoelectron and near-edge X-ray absorption fine structure spectroscopy. The surface-analytical data are in accord with the formation of self-assembled monolayers of BIEt molecules exhibiting an approximately vertical orientation on the substrate. The crystal structure of (BIEt){sub 2} was also determined.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Bacillus anthracis Prolyl 4-Hydroxylase Modifies Collagen-like Substrates in Asymmetric Patterns

Proline hydroxylation is the most prevalent post-translational modification in collagen. The resulting product trans-4-hydroxyproline (Hyp) is of critical importance for the stability and thus function of collagen, with defects leading to several diseases. Prolyl 4-hydroxylases (P4Hs) are mononuclear non-heme iron α-ketoglutarate (αKG)-dependent dioxygenases that catalyze Hyp formation. Although animal and plant P4Hs target peptidyl proline, prokaryotes have been known to use free L -proline as a precursor to form Hyp. The P4H from Bacillus anthracis (BaP4H) has been postulated to act on peptidyl proline in collagen peptides, making it unusual within the bacterial clade, but its true physiological substrate remains enigmatic. Here we use mass spectrometry, fluorescence binding, x-ray crystallography, and docking experiments to confirm that BaP4H recognizes and acts on peptidyl substrates but not free l -proline, using elements characteristic of an Fe(II)/αKG-dependent dioxygenases. We further show that BaP4H can hydroxylate unique peptidyl proline sites in collagen-derived peptides with asymmetric hydroxylation patterns. We note the cofactor-bound crystal structures of BaP4H reveal active site conformational changes that define open and closed forms and mimic “ready” and “product-released” states of the enzyme in the catalytic cycle. These results help to clarify the role of BaP4H as well as provide broader insights into human collagen P4H and proteins with poly- L -proline type II helices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2012

Ferroelectric Domain Scaling and Switching in Ultrathin BiFeO3 Films Deposited on Vicinal Substrates

We report on electrically switchable polarization and ferroelectric domain scaling over a thickness range of 5-100 nm in BiFeO{sub 3} films deposited on [110] vicinal substrates. The BiFeO{sub 3} films of variable thickness were deposited with SrRuO{sub 3} bottom layer using the pulsed laser deposition technique. The domains are engineered into preferentially oriented patterns due to substrate vicinality along the [110] direction. The domain width scales closely with the square root of film thickness, in agreement with the Landau-Lifschitz-Kittel (LLK) law. Switching spectroscopy piezo-response force microscopy provides clear evidence for the ferroelectric switching behavior in all the films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Site 2 of the Yersinia pestis substrate-binding protein YfeA is a dynamic surface metal-binding site

The substrate-binding protein YfeA (also known as YPO2439 or y1897) is a polyspecific metal-binding protein that is crucial for nutrient acquisition and virulence in Yersinia pestis, the causative microbe of plague. YfeA folds into a monomeric c-clamp like other substrate-binding proteins and has two metal-binding sites (sites 1 and 2). Site 2 is a bidentate surface site capable of binding Zn and Mn atoms and is a unique feature of YfeA. Occasionally, the site 2 residues of two YfeA molecules will cooperate with the histidine tag of a third YfeA molecule in coordinating the same metal and lead to metal-dependent crystallographic packing. Here, three crystal structures of YfeA are presented at 1.85, 2.05 and 2.25 Å resolution. A comparison of the structures reveals that the metal can be displaced at five different locations ranging from ~4 to ~16 Å away from the canonical site 2. These observations reveal different configurations of site 2 that enable cooperative metal binding and demonstrate how site 2 is dynamic and freely available for inter-protein metal coordination.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2018

Nanoscale Investigation of Grain Boundary Characteristics of Single-Crystalline-Like GaAs Films and Solar Cells on Flexible Metal Substrates

High-resolution imaging with nanometer spatial resolution was carried out to unravel the grain and grain boundary (GB) properties of single-crystalline-like n-type GaAs films and single-junction solar cells on epi-ready flexible metal substrates. Electron Back Scattered Diffraction studies revealed ultra-low angle GBs with the presence of twin boundaries. The pn junction carrier collection properties were directly imaged using cross-sectional Electron Beam Induced Current measurements. Low-temperature Cathodoluminescence imaging indicated a strong component of optical emission from the GBs. Comprehensive studies of the structural, chemical, optical and electrical properties were carried out to unravel the fundamental GB properties of flexible GaAs films on metal substrates.

14 SOLAR ENERGY↗
DOE OSTI2014

Influence of seed layers on the vertical growth of ZnO nanowires by low-temperature wet chemical bath deposition on ITO-coated glass substrate

Aligned ZnO nanowires (NWs) were synthesized by low-temperature wet chemical bath deposition (CBD) technique on indium tin oxide (ITO)-coated glass substrates using c-axis orientated ZnO and AZO (Al-doped ZnO) seed layers through the RF sputtering deposition process under different conditions. The growth direction of ZnO NW was controlled by using the two different seed layers. Results showed single-crystalline structure of the ZnO NWs with the highest peak intensity in (002) crystalline direction. In addition, NWs seeding form AZO layer, grown on ITO coated glass, were vertically aligned and uniformly distributed on the substrate. The effects of precursor concentration, growth temperature, and seed layer on NW morphology were investigated in two different seed layers systematically. The intensity of broad emissions at 500–600 nm emission was observed in room temperature photoluminescence (PL) spectra for samples prepared under optimized parameters. In addition, the green emission intensity of ZnO NWs growth on the ZnO seed layer was much weaker than that of AZO seed layer. The experimental results indicate that the selection of seed layers, precursor concentration, and the growth temperature are key parameters to vertical growth of NWs for the application of nanoscale devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Role of plasma enhanced atomic layer deposition reactor wall conditions on radical and ion substrate fluxes

Chamber wall conditions, such as wall temperature and film deposits, have long been known to influence plasma source performance on thin film processing equipment. Plasma physical characteristics depend on conductive/insulating properties of chamber walls. Radical fluxes depend on plasma characteristics as well as wall recombination rates, which can be wall material and temperature dependent. Variations in substrate delivery of plasma generated species (radicals, ions, etc.) impact the resulting etch or deposition process resulting in process drift. Plasma enhanced atomic layer deposition is known to depend strongly on substrate radical flux, but film properties can be influenced by other plasma generated phenomena, such as ion bombardment. In this paper, the chamber wall conditions on a plasma enhanced atomic layer deposition process are investigated. The downstream oxygen radical and ion fluxes from an inductively coupled plasma source are indirectly monitored in temperature controlled (25–190 °C) stainless steel and quartz reactors over a range of oxygen flow rates. Etch rates of a photoresist coated quartz crystal microbalance are used to study the oxygen radical flux dependence on reactor characteristics. Plasma density estimates from Langmuir probe ion saturation current measurements are used to study the ion flux dependence on reactor characteristics. Reactor temperature was not found to impact radical and ion fluxes substantially. Radical and ion fluxes were higher for quartz walls compared to stainless steel walls over all oxygen flow rates considered. The radical flux to ion flux ratio is likely to be a critical parameter for the deposition of consistent film properties. Reactor wall material, gas flow rate/pressure, and distance from the plasma source all impact the radical to ion flux ratio. These results indicate maintaining chamber wall conditions will be important for delivering consistent results from plasma enhanced atomic layer deposition systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Fabrication of Sr silicate buffer layer on Si(100) substrate by pulsed laser deposition using a SrO target

The authors fabricated 2 × 1 Sr-reconstructed Si(100) substrates using thin SrO layers, and used them to direct growth of crystalline perovskite oxide on Si. The SrO layers used to reconstruct the Si(100) substrates were grown by pulsed laser deposition from a SrO single crystal target, followed by postdeposition-annealing (PDA) of the SrO/Si(100) structure. In situ observations of reflective high-energy electron diffraction during PDA confirmed a 2 × 1 reconstruction of the Si surface and x-ray photoemission spectroscopy of the annealed samples confirmed the existence of Sr atoms in a silicate phase, which indicated that a 2 × 1 Sr-reconstructed Si surface was achieved. The optimal fabrication conditions were annealing at 720 °C for 1 min and an equivalent SrO layer thickness (ML{sub eq}) of 2.5 ML{sub eq}. The temperature condition was very narrow, at 720 ± 20 °C, for an acceptable product. Subsequently, the authors demonstrated the growth of crystalline SrTiO{sub 3} films on the 2 × 1 Sr-reconstructed Si(100) surfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Distribution of ion current density on a rotating spherical cap substrate during ion-assisted deposition

The uniformity of ion density is critical for applications relying on the ion assisted deposition technique for the fabrication of the high quality thin films. The authors propose and describe here a method allowing one to calculate the ion density distribution on spherical substrate holders under stationary and rotating conditions for different positions of the ion source. The ion beam shape was approximated by a cos{sup n} function, and the ion current density was represented by a function inversely proportional to the distance from the ion source in accordance with our experimental results. As an example, a calculation of the current density distribution on the spherical cap substrate was performed for a broad beam ion source operated with an anode current of 3 A. The authors propose an approach for process optimization with respect to the ion source position and its inclination, in terms of uniformity and absolute value of the ion current density.

42 ENGINEERING↗