SEARCH · Search NASA

Results for “atomic patterning”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,441 records · Page 80

All sources NASA NTRS DOE OSTI

DOE OSTI2019

An investigation of {sup 60}Co gamma radiation-induced effects on the properties of nanostructured α-MoO{sub 3} for the application in optoelectronic and photonic devices

Gamma ray has sufficient energy to ionize and displace of atoms when interacts with optoelectronic and photonic devices that are placed at γ-radiation exposure environment, can be exposed to gamma radiation, resulting the alteration of the physical properties and hence the performances of devices. A comprehensive investigation of physical properties of the semiconductor materials under the influence of gamma radiation is essential for the effective design of devices for the application in the radiation exposure environment. In this article, a potential candidate for optoelectronic and photonic devices, orthorhombic MoO{sub 3} nanoparticles with average crystallite size of 135.31 nm successfully synthesized by hydrothermal method. Then, the properties of nanoparticles exposed to low (10 kGy) and high (120 kGy) absorbed dose of γ-rays from {sup 60}Co source were characterized by XRD, FESEM, FTIR and UV–Vis–NIR spectrophotometer and effects of absorbed doses was investigated for the first time. A significant change is observed in different physical properties of α-MoO{sub 3} nanoparticles after gamma exposure. The XRD patterns reveal the average crystallite size, intensity and the degree of crystallinity decrease for low dose (10 kGy) and increases for high dose (120 kGy). The calculated average crystallite size exposed to low and high doses are 127.79 nm and 136 nm, respectively. The lattice strain and dislocation density, however, shows the opposite trend of crystallite size with absorbed doses. This result is good evidence for the deterioration of crystallinity for low dose and improvement for high dose. The FESEM results reveal the significant effects of gamma doses on the micrographs of layered structure and on grain size. The optical studies disclose that band gap increases gradually from 2.78 to 2.90 eV, this behavior is associated with the reduction of electronic localized states. These results suggest that α-MoO{sub 3} nanoparticles could tolerate high doses of gamma radiation, making it a promising candidate for optoelectronic and photonic devices for γ-ray exposure environment applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2016

Direct-write liquid phase transformations with a scanning transmission electron microscope

The highly energetic electron beam from a scanning transmission electron microscope (STEM) can induce local changes in the state of matter, ranging from local knock-out and atomic movement, to amorphization/crystallization, and chemical/electrochemical reactions occuring at localized liquid-solid and gas-solid interfaces. To date, fundamental studies of e-beam induced phenomena and practical applications have been limited by conventional e-beam rastering modes that allow only for uniform e-beam exposures. Here we develop an automated liquid phase nanolithography method that is capable of directly writing nanometer scaled features within silicon nitride encapsulated liquid cells. An external beam control system, connected to the scan coils of an aberration-corrected STEM, is used to precisely control the position, dwell time, and scan velocity of a sub-nanometer STEM probe. Site-specific locations in a sealed liquid cell containing an aqueous solution of H 2 PdCl 4 are irradiated to controllably deposit palladium onto silicon nitride membranes. We determine the threshold electron dose required for the radiolytic deposition of metallic palladium, explore the influence of electron dose on the feature size and morphology of nanolithographically patterned nanostructures, and propose a feedback-controlled monitoring method for active control of the nanofabricated structures through STEM detector signal monitoring. As a result, this approach enables both fundamental studies of electron beam induced interactions with matter, as well as opens a pathway to fabricate nanostructures with tailored architectures and chemistries via shape-controlled nanolithographic patterning from liquid phase precursors.

43 PARTICLE ACCELERATORS↗

DOE OSTI2015

Electrical and thermal properties of polycrystalline Si thin films with phononic crystal nanopatterning for thermoelectric applications

Electrical and thermal properties of polycrystalline Si thin films with two-dimensional phononic patterning were investigated at room temperature. Electrical and thermal conductivities for the phononic crystal nanostructures with a variety of radii of the circular holes were measured to systematically investigate the impact of the nanopatterning. The concept of phonon-glass and electron-crystal is valid in the investigated electron and phonon transport systems with the neck size of 80 nm. The thermal conductivity is more sensitive than the electrical conductivity to the nanopatterning due to the longer mean free path of the thermal phonons than that of the charge carriers. The values of the figure of merit ZT were 0.065 and 0.035, and the enhancement factors were 2 and 4 for the p-doped and n-doped phononic crystals compared to the unpatterned thin films, respectively, when the characteristic size of the phononic crystal nanostructure is below 100 nm. The greater enhancement factor of ZT for the n-doped sample seems to result from the strong phonon scattering by heavy phosphorus atoms at the grain boundaries.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Low-temperature atomic layer deposition of TiO{sub 2} thin layers for the processing of memristive devices

Atomic layer deposition (ALD) represents one of the most fundamental techniques capable of satisfying the strict technological requirements imposed by the rapidly evolving electronic components industry. The actual scaling trend is rapidly leading to the fabrication of nanoscaled devices able to overcome limits of the present microelectronic technology, of which the memristor is one of the principal candidates. Since their development in 2008, TiO{sub 2} thin film memristors have been identified as the future technology for resistive random access memories because of their numerous advantages in producing dense, low power-consuming, three-dimensional memory stacks. The typical features of ALD, such as self-limiting and conformal deposition without line-of-sight requirements, are strong assets for fabricating these nanosized devices. This work focuses on the realization of memristors based on low-temperature ALD TiO{sub 2} thin films. In this process, the oxide layer was directly grown on a polymeric photoresist, thus simplifying the fabrication procedure with a direct liftoff patterning instead of a complex dry etching process. The TiO{sub 2} thin films deposited in a temperature range of 120–230 °C were characterized via Raman spectroscopy and x-ray photoelectron spectroscopy, and electrical current–voltage measurements taken in voltage sweep mode were employed to confirm the existence of resistive switching behaviors typical of memristors. These measurements showed that these low-temperature devices exhibit an ON/OFF ratio comparable to that of a high-temperature memristor, thus exhibiting similar performances with respect to memory applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2016

Millimeter/submillimeter spectroscopy of Tio (X{sup 3}Δ{sub r}): the rare titanium isotopologues

Pure rotational spectra of the rare isotopologues of titanium oxide, {sup 46}TiO, {sup 47}TiO, {sup 49}TiO, and {sup 50}TiO, have been recorded using a combination of Fourier transform millimeter-wave (FTmmW) and millimeter/submillimeter direct absorption techniques in the frequency range 62–538 GHz. This study is the first complete spectroscopic characterization of these species in their X {sup 3}Δ{sub r} ground electronic states. The isotopologues were created by the reaction of N{sub 2}O or O{sub 2} and titanium vapor, produced either by laser ablation or in a Broida-type oven, and observed in the natural Ti isotopic abundances. Between 10 and 11 rotational transitions J + 1 ↔ J were measured for each species, typically in all 3 spin–orbit ladders Ω = 1, 2, and 3. For {sup 47}TiO and {sup 49}TiO, hyperfine structure was resolved, originating from the titanium-47 and titanium-49 nuclear spins of I = 5/2 and 7/2, respectively. For the Ω = 1 and 3 components, the hyperfine structure was found to follow a classic Landé pattern, while that for Ω = 2 appeared to be perturbed, likely a result of mixing with the nearby isoconfigurational a {sup 1}Δ state. The spectra were analyzed with a case (a) Hamiltonian, and rotational, spin–orbit, and spin–spin parameters were determined for each species, as well as magnetic hyperfine and electric quadrupole constants for the two molecules with nuclear spins. The most abundant species, {sup 48}TiO, has been detected in circumstellar envelopes. These measurements will enable other titanium isotopologues to be studied at millimeter wavelengths, providing Ti isotope ratios that can test models of nucleosynthesis.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2015

Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

We utilized temperature dependent photoluminescence (PL) techniques to investigate 1, 3 and 5 stack InGaAs quantum dots (QDs) grown on cross-hatch patterns. PL mapping can well reproduce the QDs distribution as AFM and position dependency of QD growth. It is possible to observe crystallographic dependent PL. The temperature dependent spectra exhibit the QDs energy distribution which reflects the size and shape. The inter-dot carrier coupling effect is observed and translated as a red shift of 120mV on the [1–10] direction peak is observed at 30K on 1 stack with regards to 3 stacks samples, which is assigned to lateral coupling.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2015

Generation of localized strain in a thin film piezoelectric to control individual magnetoelectric heterostructures

Experimental results demonstrate the ability of a surface electrode pattern to produce sufficient in-plane strain in a PbZr0.52Ti0.48O3 (PZT) thin film clamped by a Si substrate to control magnetism in a 1000 nm diameter Ni ring. The electrode pattern and the Ni ring/PZT thin film heterostructure were designed using a finite element based micromagnetics code. The magnetoelectric heterostructures were fabricated on the PZT film using e-beam lithography and characterized using magnetic force microscopy. Application of voltage to the electrodes moved one of the “onion” state domain walls. This method enables the development of complex architectures incorporating strain-mediated multiferroic devices.

Cui, Jizhai↗

DOE OSTI2016

Milky Way kinematics. II. A uniform inner galaxy H I terminal velocity curve

Using atomic hydrogen (H i) data from the VLA Galactic Plane Survey, we measure the H i terminal velocity as a function of longitude for the first quadrant of the Milky Way. We use these data, together with our previous work on the fourth Galactic quadrant, to produce a densely sampled, uniformly measured, rotation curve of the northern and southern Milky Way between 3 kpc<R<8 kpc. We determine a new joint rotation curve fit for the first and fourth quadrants, which is consistent with the fit we published in McClure-Griffiths and Dickey and can be used for estimating kinematic distances interior to the solar circle. Structure in the rotation curves is now exquisitely well defined, showing significant velocity structure on lengths of ∼200 pc, which is much greater than the spatial resolution of the rotation curve. Furthermore, the shape of the rotation curves for the first and fourth quadrants, even after subtraction of a circular rotation fit shows a surprising degree of correlation with a roughly sinusoidal pattern between 4.2<R<7 kpc.

79 ASTRONOMY AND ASTROPHYSICS↗

DOE OSTI2014

High-reliability passivation of hydrogen-terminated diamond surface by atomic layer deposition of Al{sub 2}O{sub 3}

Although the two-dimensional hole gas (2DHG) of a hydrogen-terminated diamond surface provides a unique p-type conducting layer for high-performance transistors, the conductivity is highly sensitive to its environment. Therefore, the surface must be passivated to preserve the 2DHG, especially at high temperature. We passivated the surface at high temperature (450 °C) without the loss of C-H surface bonds by atomic layer deposition (ALD) and investigated the thermal reliability of the Al{sub 2}O{sub 3} film. As a result, C-H bonds were preserved, and the hole accumulation effect appeared after the Al{sub 2}O{sub 3} deposition by ALD with H{sub 2}O as an oxidant. The sheet resistivity and hole density were almost constant between room temperature and 500 °C by the passivation with thick Al{sub 2}O{sub 3} film thicker than 38 nm deposited by ALD at 450 °C. After the annealing at 550 °C in air The sheet resistivity and hole density were preserved. These results indicate the possibility of high-temperature application of the C-H surface diamond device in air. In the case of lower deposition temperatures, the sheet resistivity increased after air annealing, suggesting an insufficient protection capability of these films. Given the result of sheet resistivity after annealing, the increase in the sheet resistivity of these samples was not greatly significant. However, bubble like patterns were observed in the Al{sub 2}O{sub 3} films formed from 200 to 400 °C by air annealing at 550 °C for 1 h. On the other hand, the patterns were no longer observed at 450 °C deposition. Thus, this 450 °C deposition is the sole solution to enabling power device application, which requires high reliability at high temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2025

Demonstration and Concept of Operations for a Zero-Knowledge Protocol Passive Imaging Measurement for Arms Control

Here, we present an imaging system that employs zero-knowledge protocols to protect sensitive geometrical information, along with procedures to increase confidence in the result. The goal of this work is to enable the inclusion of warhead confirmation measurements in future arms control treaties. We present a demonstration of both true positive and true negative measurements that validate models and establish authenticating procedures toward meeting acceptance requirements for use in nuclear facilities. We use a two-dimensional time-encoded fast neutron imaging system with an anti-symmetric mask pattern; the fast neutron count values exceeding minimum or maximum thresholds indicate that two measured items are not identical. Laboratory measurements over twenty trials show that alarm rates for negative confirmation measurements are within uncertainties of model predictions. Positive confirmation measurements indicate that alarm rates are large enough to encourage treaty compliance.

Sweany, Melinda Dominique [Sandia National Laborat↗

DOE OSTI2021

Entanglement rearrangement in self-consistent nuclear structure calculations

Background: Entanglement plays a central role in a diverse array of increasingly important research areas, including quantum computation, simulation, measurement, sensing, and communication. Extensive suites of investigations have been performed to better understand entanglement in atomic and molecular quantum many-body systems, while the exploration of entanglement in the structure of nuclei and their reactions is presently in its infancy. Purpose: The goal of this work is to begin investigating the entanglement properties of nuclei from first-principles nuclear many-body calculations. We attempt to identify common features and emergent structures of entanglement that could ultimately lead to new and natural many-body schemes. With an eye toward quantum accelerators in future hybrid-supercomputers, criteria for partitioning nuclear many-body calculations into quantum and classical components may provide advantages in future large-scale computations. Along the way we look for explanations of the relative success of phenomenological models such as the nuclear shell model, and for better ways to match to low-energy nuclear effective field theories and lattice QCD calculations to nuclear many-body techniques that are based upon entanglement. Method: We explore the entanglement between single-particle states in 4 He and 6 He. The patterns of entanglement emerging from different single-particle bases are compared, and possible links with the convergence of observables are explored, in particular, ground-state energies. The nuclear wave functions are obtained by performing active-space no-core configuration-interaction calculations using a two-body nucleon-nucleon interaction derived from chiral effective field theory. Entanglement measures within single-particle bases exhibiting different degrees of complexity are determined, in particular, harmonic oscillator (HO), Hartree-Fock (HF), natural (NAT) and variational natural (VNAT) bases. Specifically, single-orbital entanglement entropy, two-orbital mutual information, and negativity are studied. Results: The entanglement structures in 4 He and 6 He are found to be more localized within NAT and VNAT bases than within a HO basis for the optimal HO parameters we have worked with. In particular a core-valence structure clearly emerges from the full no-core calculation of 6 He. Here, the two-nucleon mutual information shows that the VNAT basis, which typically exhibits good convergence properties, effectively decouples the active and inactive spaces. Conclusions: Measures of one- and two-nucleon entanglement are found to be useful in analyzing the structure of nuclear wave functions, in particular the efficacy of basis states, and may provide useful metrics toward developing more efficient schemes for ab initio computations of the structure and reactions of nuclei, and quantum many-body systems more generally.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2025

Development of a wide bandwidth heterodyne dispersion interferometer for electron density measurement of atmospheric pressure plasmas

One of the challenges of electron density measurements of an atmospheric pressure plasma (APP) with a laser interferometer is the significant and unwanted phase shift caused by changes in the neutral gas density. These unwanted phase shifts can be mitigated and plasma density measured using an interferometer architecture called a dispersion interferometer (DI). A DI is composed of two nonlinear orientation patterned GaAs crystals for frequency doubling and measures the phase shift induced by a plasma in the interference signal between two second-harmonic beams. Measurement of plasma dynamics or a short plasma pulse in less than a millisecond is enabled with heterodyne detection in a DI using an acousto-optic cell with a frequency of 40 MHz. This heterodyne DI (HDI) is targeted to measure APPs in an electron density range of 10 20 –10 24 m −3 . Finally, the HDI achieves a line-integrated density resolution of 2 × 10 15 m −2 (a phase resolution of 0.005°) with a time constant of 1 μs using ensemble averaging techniques.

atmospheric pressure plasma↗

DOE OSTI2024

From phase decomposition to evaporation: A multi-modal evaluation of thermally degraded model lightweight high-entropy alloy

Lightweight high-entropy alloys (LHEAs) have the potential to replace conventional lightweight materials due to their superior mechanical properties and thermal stability. However, the thermal degradation pattern of LHEAs from phase decomposition to evaporation is not clear. We develop a new Al-based dual phase (FCC + HCP) LHEA—AlTi 0.45 CuZn, and further investigate its thermal degradation behavior for potential high-temperature structural applications. Using multimodal advanced characterization techniques such as differential scanning calorimetry/thermogravimetric analysis, scanning/transmission electron microscopy, and synchrotron X-ray diffraction/pair distribution function (XRD/PDF), a sequence of thermal degradation events beyond the thermal phase stability limit—between 250 and 360 °C—is observed. These include phase decomposition at ~360 °C, Zn evaporation at ~750 °C, and LHEA melting at 880 °C which results in ~25% cumulative weight loss. The formation of Al-Ti phase off the AlTi 0.45 CuZn matrix is due to the largest negative mixing enthalpy for Al-Ti than other binary pairs. Similarly, Zn evaporation from AlTi 0.45 CuZn LHEA is due to its faster evaporation rate than other constituent elements. The high-resolution synchrotron XRD and PDF results support the aforementioned observations; in addition, they reveal local atomic arrangements, local strain, and sluggish grain growth in the LHEA. Among other LHEAs of close density range (5.55 ≤ ρ ≤ 5.85 g/cc), the investigated LHEA exhibits outstanding nano-indentation hardness values due to the coupled grain size effect and HCP phase strengthening of the FCC matrix. As the search for LHEAs for lightweight applications grows, this study shows the potential use of AlTi 0.45 CuZn LHEA for structural applications even at elevated temperatures.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2018

Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation

Area-selective atomic layer deposition (ALD) is envisioned to play a key role in next-generation semiconductor processing and can also provide new opportunities in the field of catalysis. In this work, we developed an approach for the area-selective deposition of metal oxides on noble metals. Using O 2 gas as co-reactant, area-selective ALD has been achieved by relying on the catalytic dissociation of the oxygen molecules on the noble metal surface, while no deposition takes place on inert surfaces that do not dissociate oxygen (i.e., SiO 2 , Al2O 3 , Au). The process is demonstrated for selective deposition of iron oxide and nickel oxide on platinum and iridium substrates. Characterization by in situ spectroscopic ellipsometry, transmission electron microscopy, scanning Auger electron spectroscopy, and X-ray photoelectron spectroscopy confirms a very high degree of selectivity, with a constant ALD growth rate on the catalytic metal substrates and no deposition on inert substrates, even after 300 ALD cycles. We demonstrate the area-selective ALD approach on planar and patterned substrates and use it to prepare Pt/Fe 2 O 3 core/shell nanoparticles. Finally, the approach is proposed to be extendable beyond the materials presented here, specifically to other metal oxide ALD processes for which the precursor requires a strong oxidizing agent for growth.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2014

Unusual flaring activity in the blazar PKS 1424-418 during 2008-2011

Context. Blazars are a subset of active galactic nuclei (AGN) with jets that are oriented along our line of sight. Variability and spectral energy distribution (SED) studies are crucial tools for understanding the physical processes responsible for observed AGN emission. Aims. We report peculiar behaviour in the bright γ-ray blazar PKS 1424-418 and use its strong variability to reveal information about the particle acceleration and interactions in the jet. Methods. Correlation analysis of the extensive optical coverage by the ATOM telescope and nearly continuous γ-ray coverage by the Fermi Large Area Telescope is combined with broadband, time-dependent modeling of the SED incorporating supplemental information from radio and X-ray observations of this blazar. Results. We analyse in detail four bright phases at optical-GeV energies. These flares of PKS 1424-418 show high correlation between these energy ranges, with the exception of one large optical flare that coincides with relatively low γ-ray activity. Although the optical/ γ-ray behaviour of PKS 1424-418 shows variety, the multiwavelength modeling indicates that these differences can largely be explained by changes in the flux and energy spectrum of the electrons in the jet that are radiating. We find that for all flares the SED is adequately represented by a leptonic model that includes inverse Compton emission from external radiation fields with similar parameters. Conclusions. Detailed studies of individual blazars like PKS 1424-418 during periods of enhanced activity in different wavebands are helping us identify underlying patterns in the physical parameters in this class of AGN.

Buson, S.↗

DOE OSTI2014

Development of nanodiamond foils for H- stripping to Support the Spallation Neutron Source (SNS) using hot filament chemical vapor deposition

Thin diamond foils are needed in many particle accelerator experiments regarding nuclear and atomic physics, as well as in some interdisciplinary research. Particularly, nanodiamond texture is attractive for this purpose as it possesses a unique combination of diamond properties such as high thermal conductivity, mechanical strength and high radiation hardness; therefore, it is a potential material for energetic ion beam stripper foils. At the ORNL Spallation Neutron Source (SNS), the installed set of foils must be able to survive a nominal five-month operation period, without the need for unscheduled costly shutdowns and repairs. Thus, a small foil about the size of a postage stamp is critical to the operation of SNS and similar sources in U.S. laboratories and around the world. We are investigating nanocrystalline, polycrystalline and their admixture films fabricated using a hot filament chemical vapor deposition (HFCVD) system for H- stripping to support the SNS at Oak Ridge National Laboratory. Here we discuss optimization of process variables such as substrate temperature, process gas ratio of H2/Ar/CH4, substrate to filament distance, filament temperature, carburization conditions, and filament geometry to achieve high purity diamond foils on patterned silicon substrates with manageable intrinsic and thermal stresses so that they can be released as free standing foils without curling. An in situ laser reflectance interferometry tool (LRI) is used for monitoring the growth characteristics of the diamond thin film materials. The optimization process has yielded free standing foils with no pinholes. The sp3/sp2 bonds are controlled to optimize electrical resistivity to reduce the possibility of surface charging of the foils. The integrated LRI and HFCVD process provides real time information on the growth of films and can quickly illustrate growth features and control film thickness. The results are discussed in the light of development of nanodiamond foils that will be able to withstand a few MW proton beam and hopefully will be able to be used after possible future upgrades to the SNS to greater than a 3MW beam.

Vispute, R D↗

DOE OSTI2019

Effects of growth temperatures on the structural and optoelectronic properties of sputtered zinc sulfide thin films for solar cell applications

The role of various substrate temperatures on the structural and optoelectronic properties of sputtered zinc sulfide (ZnS) thin films has been investigated in this work. The study of prepared film characterization has been done by XRD, AFM, UV–Vis spectrometry and Hall-effect measurement analysis. XRD patterns of the room temperature grown films reveal an amorphous nature, while the films deposited at 100 °C, 200 °C. 300 °C and 400 °C are found to be polycrystalline having the (111) preferential orientation. The optical bandgap values are found in the range of 3.18–3.61 eV depending on the substrate temperatures. The bulk and surface carrier densities are found in the order of 10{sup 12} cm{sup −3} and 10{sup 7} cm{sup −3}, respectively. The growth temperatures are also observed to have a significant effect on the electrical characteristic of the deposited films.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2012

Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing

A technique is presented to selectively graphitize regions of SiC by ion implantation and pulsed laser annealing (PLA). Nanoscale features are patterned over large areas by multi-ion beam lithography and subsequently converted to few-layer graphene via PLA in air. Graphitization occurs only where ions have been implanted and without elevating the temperature of the surrounding substrate. Samples were characterized using Raman spectroscopy, ion scattering/channeling, SEM, and AFM, from which the degree of graphitization was determined to vary with implantation species, damage and dose, laser fluence, and pulsing. Contrasting growth regimes and graphitization mechanisms during PLA are discussed.

36 MATERIALS SCIENCE↗