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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,441 records · Page 80
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Phase diagrams of single-layer two-dimensional transition metal dichalcogenides: Landau theory

We report single layer (SL) two-dimensional transition metal dichalcogenides (TMDs), such as MoS 2 , ReS 2 , WSe 2 , and MoTe 2 have now become the focus of intensive fundamental and applied research due to their intriguing and tunable physical properties. These materials exhibit a broad range of structural phases that can be induced via elastic strain, chemical doping, and electrostatic field effect. These transformations, in turn, can open and close the band gap of SL-TMDs, leading to metal-insulator transitions, and lead to emergence of more complex quantum phenomena. These considerations necessitate detailed understanding of the mesoscopic mechanisms of these structural phase transitions. Here we develop a Landau-type thermodynamic description of SL-TMDs on a sample of the SL-(MoS 2 ) 1-x -(ReS 2 ) x system and analyze the free energy surfaces, phase diagrams, and order parameter behavior. Our results predict the existence of multiple structural phases with two-, six- and 12-fold degenerated energy minima for in-plane and out-of-plane order parameters. This analysis suggests that out-of-plane ferroelectricity can exist in many of these phases, with the switchable polarization being proportional to the out-of-plane order parameter. We further predict that the domain walls in SL-(MoS 2 ) 1-x -(ReS 2 ) x should become conductive above a certain strain threshold.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Synthesis and structure of undoped and indium-doped thermoelectric lead telluride nanoparticles

Undoped and indium (In)-doped lead telluride (PbTe) nanostructures were synthesized via solvothermal/hydrothermal route. The crystalline structure of the as-prepared undoped and In-doped PbTe samples was examined by X-ray diffraction (XRD) which indicated the formation of face-centered single-phase cubic crystal. A first principle calculation on indium doping shows that the indium atoms are more likely to replace lead (Pb) rather than to take the interstitial sites. Laser-induced breakdown spectroscopy (LIBS) analysis confirms that indium is incorporated into the PbTe matrix of the indium-doped PbTe samples. The effects of surfactant and synthesis temperature on the structure and morphology of the undoped PbTe were also investigated; it was found that PbTe nanostructures synthesized with the addition of surfactants exhibited uniform shapes and their size increased with the synthesis temperature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

From Fundamental Understanding To Predicting New Nanomaterials For High Capacity Hydrogen/Methane Storage and Carbon Capture

On-board hydrogen/methane storage in fuel cell-powered vehicles is a major component of the national need to achieve energy independence and protect the environment. The main obstacles in hydrogen storage are slow kinetics, poor reversibility and high dehydrogenation temperatures for the chemical hydrides; and very low desorption temperatures/energies for the physisorption materials (MOF’s, porous carbons). Similarly, the current methane storage technologies are mainly based on physisorption in porous materials but the gravimetric and volumetric storage capacities are below the target values. Finally, carbon capture, a critical component of the mitigation of CO 2 emissions from industrial plants, also suffers from similar problems. The solid-absorbers such as MOFs are either not stable against real flue-gas conditions and/or do not have large enough CO 2 capture capacity to be practical and cost effective. In this project, we addressed these challenges using a unique combination of computational, synthetic and experimental methods. The main scope of our research was to achieve fundamental understanding of the chemical and structural interactions governing the storage and release of hydrogen/methane and carbon capture in a wide spectrum of candidate materials. We studied the effect of scaffolding and doping of the candidate materials on their storage and dynamics properties. We reviewed current progress, challenges and prospect in closely related fields of hydrogen/methane storage and carbon capture. For example, for physisorption based storage materials, we show that tap-densities or simply pressing MOFs into pellet forms reduce the uptake capacities by half and therefore packing MOFs is one of the most important challenges going forward. For room temperature hydrogen storage application of MOFs, we argue that MOFs are the most promising scaffold materials for Ammonia-Borane (AB) because of their unique interior active metal-centers for AB binding and well defined and ordered pores. Here the main challenge is to find a chemically stable MOF required for regeneration of the AB-spent fuel. Finally, for carbon capture application of MOFs, we investigate the performance of a number of metal–organic frameworks with particular focus on their behavior at the low pressures commonly used in swing adsorption. This comparison clearly shows that it is the process that determines which MOF is optimal rather than there being one best MOF, though MOFs that possess enhanced binding at open metal sites generally perform better than those with high surface area.

03 NATURAL GAS↗
DOE OSTI2018

Viscosity Control Experiment Feasibility Study

Turbulent mix has been invoked to explain many results in Inertial Confinement Fusion (ICF) and High Energy Density (HED) physics, such as reduced yield in capsule implosions. Many ICF capsule implosions exhibit interfacial instabilities seeded by the drive shock, but it is not clear that fully developed turbulence results from this. Many simulations use turbulent mix models to help match simulation results to data, but this is not appropriate if turbulence is not present. It would be useful to have an experiment where turbulent mixing could be turned on or off by design. The use of high-Z dopants to modify viscosity and the resulting influence on turbulence is considered here. A complicating factor is that the plasma in some implosions can become strongly coupled, which makes the Spitzer expression for viscosity invalid. We first consider equations that cover a broad parameter space in temperature and density to address regimes for various experimental applications. Next, a previous shock-tube and other ICF experiments that investigate viscosity or use doping to examine the effects on yield are reviewed. How viscosity and dopants play a role in capsule yield depends on the region and process under consideration. Experiments and simulations have been performed to study the effects of viscosity on both the hot spot and the fuel/ablator mix. Increases in yield have been seen for some designs, but not all. We then discuss the effect of adding krypton dopant to the gas region of a typical OMEGA and a 2-shock NIF implosion to determine approximately the effect of adding dopant on the computed Reynolds number. Recommendations for a path forward for possible experiments using high-Z dopants to affect viscosity and turbulence are made.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS2003

Does the Iron K and Alpha: Line of Active Galactic Nuclei Arise from the Cerenkov Line-like Radiation?

When thermal relativistic electrons with isotropic distribution of velocities move in a gas region or impinge upon the surface of a cloud that consists of a dense gas or doped dusts, the Cerenkov effect produces peculiar atomic or ionic emission lines, which is known as the Cerenkov line - like radiation. This newly recognized emission mechanism may find wide applications in high-energy astrophysics. In this paper we tentatively adopt this new line emission mechanism to discuss the origin of the iron Kα feature of active galactic nuclei (AGNs). The motivation of this research is to attempt a solution to a problem encountered by the "disk fluorescence line" model, i.e. , the lack of temporal response of the observed iron Kα line flux to the changes of the X-ray continuum flux. If the Cerenkov line emission is indeed responsible significant ly for the iron Kα feature, the conventional scenario around the central supermassive black holes of AGNs would need to be modified to accomodate more energetic, more violent, and much denser environments than previously thought.

You, J. H.↗
NASA NTRS2010

N channel JFET based digital logic gate structure

A circuit topography is presented which is used to create usable digital logic gates using N (negatively doped) channel Junction Field Effect Transistors (JFETs) and load resistors, level shifting resistors, and supply rails whose values are based on the direct current (DC) parametric distributions of those JFETs. This method has direct application to the current state of the art in high temperature, for example 300.degree. C. to 500.degree. C. and higher, silicon carbide (SiC) device production. The ability to produce inverting and combinatorial logic enables the production of pulse and edge triggered latches. This scale of logic synthesis would bring digital logic and state machine capabilities to devices operating in extremely hot environments, such as the surface of Venus, near hydrothermal vents, within nuclear reactors (SiC is inherently radiation hardened), and within internal combustion engines. The basic logic gate can be configured as a driver for oscillator circuits allowing for time bases and simple digitizers for resistive or reactive sensors. The basic structure of this innovation, the inverter, can be reconfigured into various analog circuit topographies through the use of feedback structures.

Krasowski, Michael J.↗
NASA NTRS2011

Source-Coupled, N-Channel, JFET-Based Digital Logic Gate Structure Using Resistive Level Shifters

A circuit topography is used to create usable, digital logic gates using N (negatively doped) channel junction field effect transistors (JFETs), load resistors, level shifting resistors, and supply rails whose values are based on the DC parametric distributions of these JFETs. This method has direct application to the current state-of-the-art in high-temperature (300 to 500 C and higher) silicon carbide (SiC) device production, and defines an adaptation to the logic gate described in U.S. Patent 7,688,117 in that, by removing the level shifter from the output of the gate structure described in the patent (and applying it to the input of the same gate), a source-coupled gate topography is created. This structure allows for the construction AND/OR (sum of products) arrays that use far fewer transistors and resistors than the same array as constructed from the gates described in the aforementioned patent. This plays a central role when large multiplexer constructs are necessary; for example, as in the construction of memory. This innovation moves the resistive level shifter from the output of the basic gate structure to the front as if the input is now configured as what would be the output of the preceding gate, wherein the output is the two level shifting resistors. The output of this innovation can now be realized as the lone follower transistor with its source node as the gate output. Additionally, one may leave intact the resistive level shifter on the new gate topography. A source-coupled to direct-coupled logic translator will be the result.

Krasowski, Michael J.↗
DOE OSTI2025

Study on Electropolishing of N-Doped Niobium Surfaces and 650 MHz Cavity for High-Gradient Performance

This presentation provides an overview of the latest studies on electropolishing (EP) of nitrogen-doped niobium surfaces and 650 MHz cavities. The first study focuses on optimizing EP parameters to achieve a pit-free surface on N-doped niobium, highlighting the effects of process conditions on surface pitting and suggesting strategies for mitigation. The second study investigates the EP of 650 MHz cavities to achieve high-gradient performance comparable to that of 1.3 GHz niobium SRF cavities. Additionally, an example of a 650 MHz single-cell cavity is presented, demonstrating its record-high gradient achieved through optimized EP conditions.

43 PARTICLE ACCELERATORS↗
DOE OSTI2018

Dielectric Losses and Charge Transfer in Antimony-Doped TlGaS{sub 2} Single Crystal

Effect of semimetallic antimony (0.5 mol % Sb) on the dielectric properties and ac-conductivity of TlGaS{sub 2}-based single crystals grown by the Bridgman–Stockbarger method has been studied. The experimental results on the frequency dispersion of dielectric coefficients and the conductivity of TlGa{sub 0.995}Sb{sub 0.005}S{sub 2} single crystals allowed the revealing of the dielectric loss nature, the charge transfer mechanism, and the estimation of the parameters of the states localized in the energy gap. The antimony-doping of the TlGaS{sub 2} single crystal leads to an increase in the density of states near the Fermi level and a decrease in the average time and average distance of hopes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Emission intensity of the λ = 1.54 μm line in ZnO films grown by magnetron sputtering, diffusion doped with Ce, Yb, Er

The effect of the Er{sup 3+}-ion excitation type on the photoluminescence spectra of crystalline ZnO(ZnO〈Ce, Yb, Er〉) films is determined in the cases of resonant (λ = 532 nm, Er{sup 3+}-ion transition from {sup 4}S{sub 3/2}, {sup 2}H{sub 11/2} levels to {sup 4}I{sub 15/2}) and non-resonant (λ = 325 nm, in the region near the ZnO band-edge emission) excitation. It is shown that resonant excitation gives rise to lines with various emission intensities, characteristic of the Er{sup 3+}-ion intracenter 4f transition with λ = 1535 nm when doping crystalline ZnO films with three rare-earth ions (REIs, Ce, Yb, Er) or with two impurities (Ce, Er) or (Er, Yb), independently of the measurement temperature (T = 83 and 300 K). The doping of crystalline ZnO films with rare-earth impurities (Ce, Yb, Er) leads to the efficient transfer of energy to REIs, a consequence of which is the intense emission of an Er{sup 3+} ion in the IR spectral region at λ{sub max} = 1535 nm. The kick-out diffusion mechanism is used upon the sequential introduction of impurities into semiconductor matrices and during the postgrowth annealing of the ZnO films under study. The crystalline ZnO films doped with Ce, Yb, Er also exhibit intense emission in the visible spectral region at room temperature, which makes them promising materials for optoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Modeling of the metal–insulator transition temperature in alio-valently doped VO 2 through symbolic regression

The correlated semiconductor vanadium dioxide (VO 2 ) exhibits an insulator–metal transition (IMT) near room temperature, which is of interest in various device applications. Precise IMT temperature control is crucial to determine the use cases across technologies such as thermochromic windows, actuators for robots or neuronal oscillators. Doping the cation or anion sites can modulate the IMT by several tens of degrees and control hysteresis. However, modeling the effects of control parameters (e.g., doping concentration, type of dopants) is challenging due to complex experimental procedures and limited data, hindering the use of traditional data-driven machine learning approaches. Symbolic regression (SR) can bridge this gap by identifying nonlinear expressions connecting key input parameters to target properties, even with small data sets. In this work, we develop SR models to capture the IMT trends in VO 2 influenced by different dopant parameters. Using experimental data from the literature, our study reveals a dual nature of the IMT temperature with varying tungsten (W) doping concentrations. The symbolic model captures data trends and accounts for experimental variability, providing a complementary approach to first-principles calculations. Our feature-driven analysis across a broader class of dopants informs selectivity and provides qualitative insights into tuning phase transition properties valuable for neuromorphic computing and thermochromic windows.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Prediction of Magnetocaloric Effect in La{sub 0.67}Pb{sub 0.33}(Mn{sub 1−x}Co{sub x})O{sub 3} Compounds (x = 0.01, 0.06, 0.1 and 0.15)

The magnetocaloric properties for the Co-doped La{sub 0.67}Pb{sub 0.33}(Mn{sub 1−x}Co{sub x})O{sub 3} samples with x= 0.01, 0.06, 0.1 and 0.15 under a 0.005 T magnetic field have been theoretically investigated and compared with experimental results. It has been found that the Co doping in this system decreases lightly the magnetocaloric properties. Moreover, the results of Co doping indicate that the magnetocaloric effect in this system is tunable, which is beneficial for manipulating magnetocaloric refrigeration that occurs in various temperature ranges. This makes the La{sub 0.67}Pb{sub 0.33}(Mn{sub 1−x}Co{sub x})O{sub 3} samples potential candidates for practical applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Electron effective mass in Al{sub 0.72}Ga{sub 0.28}N alloys determined by mid-infrared optical Hall effect

The effective electron mass parameter in Si-doped Al{sub 0.72}Ga{sub 0.28}N is determined to be m{sup ∗}=(0.336±0.020) m{sub 0} from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and m{sup ∗}=0.232 m{sub 0} for GaN, an average effective electron mass of m{sup ∗}=0.376 m{sub 0} can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E{sub 1}(TO) and one phonon mode behavior of the A{sub 1}(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells

Reduced quantum dot (QD) absorption due to state filling effects and enhanced electron transport in doped QDs are demonstrated to play a key role in solar energy conversion. Reduced QD state absorption with increased n-doping is observed in the self-assembled In{sub 0.5}Ga{sub 0.5}As/GaAs QDs from high resolution below-bandgap external quantum efficiency (EQE) measurement, which is a direct consequence of the Pauli exclusion principle. We also show that besides partial filling of the quantum states, electron-doping produces negatively charged QDs that exert a repulsive Coulomb force on the mobile electrons, thus altering the electron trajectory and reducing the probability of electron capture, leading to an improved collection efficiency of photo-generated carriers, as indicated by an absolute above-bandgap EQE measurement. The resulting redistribution of the mobile electron in the planar direction is further validated by the observed photoluminescence intensity dependence on doping.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗