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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,459 records · Page 81
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Spatial symmetry breaking in single-frequency CCP discharge with transverse magnetic field

An independent control of the flux and energy of ions impacting on an object immersed in a plasma is often desirable for many industrial processes such as microelectronics manufacturing. We demonstrate that a simultaneous control of these quantities is possible by a suitable choice of a static magnetic field applied parallel to the plane electrodes in a standard single frequency capacitively coupled plasma device. Our particle-in-cell simulations show a 60% reduction in the sheath width (that improves control of ion energy) and a fourfold increase in the ion flux at the electrode as a consequence of the altered ion and electron dynamics due to the ambient magnetic field. A detailed analysis of the particle dynamics is presented, and the optimized operating parameters of the device are discussed. In conclusion, the present technique offers a simple and attractive alternative to conventional dual frequency based devices that often suffer from undesirable limitations arising from frequency coupling and electromagnetic effects.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2018

A single electron transistor charge sensor in strong rf fields

We measure the charge sensitivity, S e , of a single electron transistor (SET) in the presence of strong (V rf ~ e/C g ) spurious radio frequency (rf) signals at frequencies up to 50 MHz, where C g is the gate capacitance. Although S e appears to degrade when exposed to V rf , we find that broadening of conduction peaks is largely due to the measurement technique and show that S e is maintained even with strong V rf present. We show cancellation of a known V rf signal at 1 MHz, demonstrating that a stable bias point in the presence of rf signals is possible.

47 OTHER INSTRUMENTATION↗
DOE OSTI2019

Stabilization of ferroelectric phase of Hf 0.58 Zr 0.42 O 2 on NbN at 4 K

Ferroelectricity in doped and alloyed hafnia thin films has been demonstrated using several different electrodes, with TiN and TaN being most prominent. Here, in this work, we demonstrate ferroelectric Hf 0.58 Zr 0.42 O 2 thin films with superconducting NbN electrodes at cryogenic temperatures. Demonstration of polarization—electric field [P(E)] response at liquid helium cryogenic temperatures, 4 K, suggests that the polarization is switchable over a wide temperature range after an initial 600 °C anneal. Further, room temperature P(E) and capacitance measurements demonstrate an expected polarization response with wake-up required to reach the steady state. Wake-up cycling at 4 K is observed to have no effect upon the ferroelectric phase suggesting an oxygen vacancy mobility freeze out whereas wake-up cycling at 294 K demonstrates close to a 3× increase in remanent polarization. In conclusion, this integration of a ferroelectric Hf 0.58 Zr 0.42 O 2 thin film with NbN demonstrates the suitability of a highly scalable ferroelectric in applications for cryogenic technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Effects of transmission line geometry on traveling-wave metal-insulator-metal rectenna infrared detectors

The transmission line impedance of traveling-wave diodes can circumvent resistance-capacitance time constant limitations of metal-insulator-metal diodes in rectennas operating at optical frequencies. We performed three-dimensional simulations of a traveling-wave diode rectenna using a linear finite-element electromagnetic solver. We develop a method to analyze metal-insulator-metal traveling-wave rectennas by using the field profiles from the linear finite-element solver and accounting for the nonlinear current-voltage characteristics during postprocessing. The traveling-wave diode length produces resonance at half surface plasmon wavelength intervals. With optimized cross section and length parameters, we observe a peak system responsivity of 239μA/W and a detectivity of 5.7×10 4 Jones.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Integrated high electron mobility transistors in GaAs/AlGaAs heterostructures for amplification at sub-Kelvin temperatures

Here, we demonstrate the use of custom high electron mobility transistors (HEMTs) fabricated in GaAs/AlGaAs heterostructures to amplify current from quantum dot devices. The amplifier circuit is located adjacent to the quantum dot device, at sub-Kelvin temperatures, in order to reduce the impact of cable capacitance and environmental noise. Using this circuit, we show a current gain of 380 for 0.56 μW of power dissipation, with a bandwidth of 2.7 MHz and current noise referred to the input of 24 fA/Hz 1/2 for frequencies of 0.1–1 MHz. The power consumption required for similar gain is reduced by more than a factor of 20 compared to a previous demonstration using a commercial off-the-shelf HEMT. Lastly, we also demonstrate integration of a HEMT amplifier circuit on-chip with a quantum dot device, which has the potential to reduce parasitics and should allow for more complex circuits with reduced footprints.

42 ENGINEERING↗
DOE OSTI2019

Optomechanical Design of Compact Laminar Flexure Bending Mechanism for Elliptically Bent Hard X-ray Mirrors

As a part of the Argonne Strategic Partnership Project (SPP) 85E77, collaboration between Argonne National Laboratory (ANL) and Shanghai Institute of Applied Physics (SINAP), has produced designs for a precision compact flexure bending mechanism to provide elliptically shaped 90-mm and 160-mm long hard x-ray mirrors. The design utilizes Argonne's laminar nanopositioning flexure technique. The flexure mirror bending mechanism will be incorporated into the beamline upgrade project at the Shanghai Synchrotron Radiation Facility (SSRF). Additionally, an Argonne Laboratory-Directed Research and Development (LDRD) project at the Advanced Photon Source (APS) has adopted a modified optomechanical design of the precision compact mirror benders for 300-mm-long hard x-ray mirrors with integrated profile monitoring and feedback, which are described in this paper. The mirror benders are designed with configurations for open-loop or closed-loop controls. Capacitive sensors can be applied to the mirror benders to ensure positioning reproducibility. Design specifications as well as finite element analyses results of the compact mirror benders for hard x-ray mirrors with trapezoid and rectangular shapes are discussed in this paper.

X-ray optics, nanopositioning flexure stage↗
DOE OSTI2019

Probing the band alignment in rectifying SrIrO 3 /Nb:SrTiO 3 heterostructures

Here, we have examined the band alignment in SrIrO 3 /Nb:SrTiO 3 (001) heterojunctions at room temperature using three independent techniques: current–voltage and capacitance–voltage measurements and internal photoemission spectroscopy. We find near-ideal rectifying behavior across the junction, which provides the opportunity to establish the band alignment via Schottky barrier height extractions in the metal-semiconductor junction approximation. The Schottky barrier height deduced from these measurements agrees well with each other within ~14%, with an average value of 1.44 ± 0.11 eV. These results provide a foundation for designing oxide heterostructures to harness the strong spin-orbit coupling and electrochemical properties of strontium iridate.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Radio frequency wave interactions with a plasma sheath: The role of wave and plasma sheath impedances

Radio frequency (RF) sheaths form near surfaces where plasma and strong RF fields coexist. The effect of these RF sheaths on wave propagation near the boundary can be characterized by an effective sheath impedance that includes both resistive and capacitive contributions describing RF sheath rectification and RF power absorption in the sheath [J. R. Myra and D. A. D'Ippolito, Phys. Plasmas 22, 062507 (2015)]. We define a dimensionless parameter, the ratio of incoming wave impedance to the sheath impedance, which determines the characteristics of the interaction, ranging from quasi-conducting to quasi-insulating, or in the case of matched impedances, to either perfect absorption or a sheath-plasma resonance. A semi-analytical analysis is carried out for electrostatic slow waves in the ion cyclotron range of frequencies. For the propagating slow wave case, where the incident wave is partially reflected, the fraction of power dissipated in the sheath is calculated. For the evanescent slow wave case, which admits a sheath-plasma resonance, an amplification factor is calculated. Using the impedance ratio approach, RF sheath interactions are characterized for a range of RF wave and plasma parameters including plasma density, magnetic field angle with respect to the surface, wave frequency, and wave-vector components tangent to the surface. For a particularly interesting example case, results are compared with the rfSOL code [H. Kohno and J. R. Myra, Comput. Phys. Commun. 220, 129 (2017)]. Finally, electromagnetic effects, absent from the semi-analytical analysis, are assessed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

Measurement of the electron energy distribution in moving striations at low gas pressures

The time-resolved Electron Energy Distribution Functions (EEDFs) have been measured at different phases of moving striations in a positive column of DC discharge in argon gas. A very low gas pressure of 10 mTorr, a high energy resolution (to resolve the low energy part of the EEDF), and the dynamic range up to 3–4 orders of magnitude (to resolve the EEDF tail) with a temporal resolution of 2.5 μs distinguish our work from previous publications. The measured EEDFs reveal drastic changes in time of their low energy parts with the formation of a low energy peak. The observed EEDF dynamics is explained in the framework of nonlocal electron kinetics as electric field reversals and the trapping of low-energy electrons in potential wells propagating with striation along the discharge tube. Finally, the formation of the low energy peak in the EEDF is similar to that in rf capacitive and inductive discharges at low gas pressures where the low-energy electrons are trapped in the potential well created by the ambipolar electric field and cannot penetrate into the areas of electron heating by strong rf electric fields

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2019

Spontaneous multi-keV electron generation in a low-RF-power axisymmetric mirror machine

X-ray emission reflects the existence of multikilo-electron-volt electrons in low-temperature, low-power, capacitively coupled RF-heated magnetic-mirror plasmas that also contain a warm (300 eV) minority electron population. Though these warm electrons are initially passing particles, we imply that collisionless scattering—μ nonconservation in the static vacuum field—is responsible for a minority of them to persist in the mirror cell for thousands of transits during which time a fraction is energized to a characteristic temperature of 3 keV, with some electrons reaching energies above 30 keV. A heuristic model of the heating by a Fermi-accelerationlike mechanism is shown, with μ nonconservation in the static vacuum field as an essential feature.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

Structural, band and electrical characterization of β-(Al 0.19 Ga 0.81 ) 2 O 3 films grown by molecular beam epitaxy on Sn doped β-Ga 2 O 3 substrate

In this study, we characterized unintentionally doped β-(Al 0.19 Ga 0.81 ) 2 O 3 for its structural, band, and electrical properties by using a variety of material and electrical characterization methods such as atom probe tomography (APT), transmission electron microscope, X-ray photoelectron spectroscopy (XPS), capacitance-voltage measurement, and a temperature dependent forward current-voltage measurement. A 115 nm thick β-(Al 0.19 Ga 0.81 ) 2 O 3 film was grown by molecular beam epitaxy on Sn doped Ga 2 O 3 substrates. Reciprocal space mapping shows a lattice matched (Al 0.19 Ga 0.81 ) 2 O 3 layer. Both APT and TEM results confirm a sharp β-(Al 0.19 Ga 0.81 ) 2 O 3 /β-Ga 2 O 3 interface. XPS measurements show conduction band offsets of 2.78 ± 0.25 eV and 0.79 ± 0.25 eV between the SiO 2 /β-(Al 0.19 Ga 0.81 ) 2 O 3 and β-(Al 0.19 Ga 0.81 ) 2 O 3 /β-Ga 2 O 3 interfaces, respectively. Extracted room temperature Schottky Barrier Heights ( SBHs ) after zero field correction for Pt, Ni, and Ti were 2.98 ± 0.25 eV, 2.81 ± 0.25 eV, and 1.81 ± 0.25 eV, respectively. The variation of SBHs with metals clearly indicates the dependence on work function.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2019

Argon metastable and resonant level densities in Ar and Ar/Cl 2 discharges used for the processing of bulk niobium

In this work, a comparative analysis of two popular spectroscopy techniques is conducted in a coaxial cylindrical capacitively coupled discharge designed for the plasma processing of superconducting radio frequency (SRF) cavities. The density of the metastable and resonant levels in Ar is measured in both Ar and Ar/Cl 2 discharges to properly characterize the unique discharge system and aid in the development of a cavity etching routine. The first method, deemed the “branching fraction method,” utilizes the sensitivity of photon reabsorption of radiative decay to measure the lower state (metastable and resonant) densities by taking ratios of spectral lines with a common upper level. This method has been gaining popularity as it does not require any a priori knowledge about the electron energy distribution. The second method is a tunable diode laser absorption spectroscopy technique that measures the thermal Doppler broadening of spectral lines, from which the neutral gas temperature and lower state density of the transition can be evaluated. The two methods were conducted in tandem, while external parameters that were empirically determined to be important to the etching mechanism of SRF cavities are varied. Relationships between the excited state densities and the external parameters are presented for both spectroscopy methods and conclusions about the effects of these parameters on the discharge are stated when appropriate.

Plasma properties and parameters↗
DOE OSTI2019

Direct printing of metal contacts on 4H-SiC for radiation detection

Additive manufacturing (AM) has created the possibility of replacing traditional manufacturing techniques with faster, versatile and cost-effective production options. Here, we employed AM techniques to fabricate silicon carbide (SiC) radiation detectors based on commercial 4H-SiC wafers. Platinum (Pt) nanoparticle inks were synthesized and printed onto the surface of a 4H-SiC wafer using an aerosol jet printing technique to create Schottky diodes for radiation detection. The additive printed detectors were characterized for surface morphology through a scanning electron microscope (SEM) and atomic force microscope (AFM), and electronically by current-voltage (IV), capacitance-voltage (CV) and finally by alpha spectroscopy measurements. Lastly, the printed detector achieved an energy resolution of 3.24% FWHM at 5.486 MeV, compared to 0.62% FWHM of a SiC detector fabricated by conventional clean room technologies and 0.3% FWHM of a commercially available Si detector.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Wettability of ultra-small pores of carbon electrodes by size-asymmetric ionic fluids

Recently, we studied the phase behavior of ionic fluids under confinement using the classical density functional theory within the framework of the restricted primitive model. Additionally, the theoretical results indicate that narrowing the pore size may lead to a drastic reduction in the electric double layer capacitance, while increasing the surface electrical potential would improve the ionic accessibility of micropores. In this work, we extend the theoretical investigation to systems containing size-asymmetric electrolytes that may exhibit a vapor-liquid like phase transition in the bulk phase. The effects of pore size and surface electric potential on the phase diagram and microscopic structures of the confined electrolytes were studied over a broad range of parameters. We found that decreasing the pore size or increasing the surface potential could destabilize the liquid phase in micropores, and capillary evaporation could occur regardless of the size asymmetry between cations and anions. Compared to that in a symmetric ionic system, the vapor-liquid phase separation is more likely to take place as the size asymmetry becomes more pronounced. The phase transition would alter the “accessibility” of ions to micropores and lead to coexisting micropores with different surface charge densities as identified by Monte Carlo simulation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Interference of electrical double layers: Confinement effects on structure, dynamics, and screening of ionic liquids

Ionic liquids are widely used as electrolytes in electronic devices in which they are subject to nanoconfinement within nanopores or nanofilms. Because the intrinsic width of an electrical double layer is on the order of several nanometers, nanoconfinement is expected to fundamentally alter the double layer properties. Furthermore, in confined systems, a large portion of the ions are interfacial, e.g., at the electrode interface, leading to significant deviations of electrostatic screening and ion dynamics as compared to bulk properties. In this article, we systematically investigate the interference between electrical double layers for nanoconfined ionic liquids and the resulting influence on the structure, dynamics, and screening behavior. We perform molecular dynamics simulations for the ionic liquids [BMIm + ][BF$^-_4$] and [BMIm + ][PF$^-_6$] confined between two flat electrodes at systematic separation distances between 1.5 nm and 4.5 nm for both conducting and insulating boundary conditions. We find that while ion dynamics is expectedly slower than in the bulk (by ~2 orders of magnitude), there is an unexpected non-linear trend with the confinement length that leads to a local maximum in dynamic rates at ~3.5–4.5 nm confinement. We show that this nonlinear trend is due to the ion correlation that arises from the interference between opposite double layers. We further evaluate confinement effects on the ion structure and capacitance and investigate the influence of electronic polarization of the ionic liquid on the resulting properties. This systematic evaluation of the connection between electrostatic screening and structure and dynamics of ionic liquids in confined systems is important for the fundamental understanding of electrochemical supercapacitors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

A feasible path for the use of ferromagnetic josephson junctions in quantum circuits: The ferro-transmon

We discuss the capabilities of ferromagnetic (F) Josephson junctions (JJs) in a variety of layouts and configurations. The main goal is to demonstrate the potential of these hybrid JJs to disclose new physics and the possibility to integrate them in superconducting classical and quantum electronics for various applications. The feasible path towards the use of ferromagnetic Josephson junctions in quantum circuits starts from experiments demonstrating macroscopic quantum tunneling in NbN/GdN/NbN junctions with ferro-insulator barriers and with triplet components of the supercurrent, supported by a self-consistent electrodynamic characterization as a function of the barrier thickness. This has inspired further studies on tunnel ferromagnetic junctions with a different layout and promoted the first generation of ferromagnetic Al-based JJs, specifically Al/AlO x /Al/Py/Al. This layout takes advantage of the capability to integrate the ferromagnetic layer in the junction without affecting the quality of the superconducting electrodes and of the tunnel barrier. The high quality of the devices paves the way for the possible implementation of Al tunnel-ferromagnetic JJs in superconducting quantum circuits. These achievements have promoted the notion of a novel type of qubit incorporating ferromagnetic JJs. This qubit is based on a transmon design featuring a tunnel JJ in parallel with a ferromagnetic JJ inside a SQUID loop capacitively coupled to a superconducting readout resonator. In conclusion, the effect of an external RF field on the magnetic switching processes of ferromagnetic JJs has been also investigated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

A graphene-based magnetoplasmonic metasurface for actively tunable transmission and polarization rotation at terahertz frequencies

The rise of terahertz (THz)-based technologies has prompted intense interest in methods for manipulating the properties of THz radiation. In this Letter, we experimentally demonstrate a graphene micro-ribbon-based metasurface that allows us to tailor and dynamically tune the transmission and polarization rotation spectra of impinging THz pulses. This is achieved by controlling the geometry of the ribbon pattern and the applied DC magnetic field, both of which strongly influence the magnetoplasmonic response of the metasurface. The properties of the metasurface can be accurately modeled using an effective medium approach that considers the capacitive interaction of the ribbons resulting from the THz electric field. Furthermore, our results highlight the promise of graphene-based THz devices that leverage the strongly enhanced light–matter interactions resulting from patterning.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Improvements to the Faraday cup fast ion loss detector and magnetohydrodynamic induced fast ion loss measurements in Joint European Torus plasmas

Upgrades to electronic hardware and detector design have been made to the JET thin-foil Faraday cup fast ion loss detector in anticipation of the upcoming deuterium–tritium (DT) campaign. An improved foil stack design has been implemented, which greatly reduces the number of foil-to-foil shorts, and triaxial cabling has mitigated ambient noise pickup. Initial tests of 200 kHz digitizers, as opposed to the original 5 kHz digitizers, have provided enhanced analysis techniques and direct coherence measurements of fast ion losses with magnetohydrodynamic activity. Here, we present recent loss measurements in JET deuterium plasmas correlated with kink modes, fishbone modes, edge-localized modes, and sawteeth. Sources of systematic noise are discussed with emphasis on capacitive plasma pickup. Overall, the system upgrades have established a diagnostic capable of recording alpha particle losses due to a wide variety of resonant fast ion transport mechanisms to be used in future DT-experiments and modeling efforts.

47 OTHER INSTRUMENTATION↗