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At least 1,477 records · Page 82

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DOE OSTI2016

Laser sintering of a TiO{sub 2} nanoporous film on a flexible substrate for application in solar cells

The selective laser sintering of TiO{sub 2}-film nanoparticles on a plastic conductive substrate is considered for application in flexible dye-sensitized solar cells. It is shown that the absorbed energy of the laser radiation during laser sintering promotes electrical-contact formation between TiO{sub 2} nanoparticles without damaging the plastic conductive substrate. The choice of a near-infrared laser radiation (wavelength of 1064 nm) provides an efficient laser-sintering process. The laser-sintering method promotes a decrease in recombination losses in the TiO{sub 2} film and an improvement in the charge-collection efficiency, which can result in an increase in the efficiency of such solar cells. Furthermore, the efficient-laser sintering method has a great potential for application in the roll-to-roll technology of the fabrication of high-efficiency flexible solar cells.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates

Nanostructured aluminum-nitride films are formed by reactive ion-plasma sputtering onto GaAs substrates with different orientations. The properties of the films are studied via structural analysis, atomic force microscopy, and infrared and visible–ultraviolet spectroscopy. The aluminum-nitride films can have a refractive index in the range of 1.6–4.0 at a wavelength of ~250 nm and an optical band gap of ~5 eV. It is shown that the morphology, surface composition, and optical characteristics of AlN/GaAs heterophase systems can be controlled using misoriented GaAs substrates.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method

In this publication, the results of development of the technology of the epitaxial growth of GaN on single-crystal langasite substrates La{sub 3}Ga{sub 5}SiO{sub 14} (0001) by the plasma-assisted molecular-beam epitaxy (PA MBE) method are reported. An investigation of the effect of the growth temperature at the initial stage of deposition on the crystal quality and morphology of the obtained GaN layer is performed. It is demonstrated that the optimal temperature for deposition of the initial GaN layer onto the langasite substrate is about ~520°C. A decrease in the growth temperature to this value allows the suppression of oxygen diffusion from langasite into the growing layer and a decrease in the dislocation density in the main GaN layer upon its subsequent high-temperature deposition (~700°C). Further lowering of the growth temperature of the nucleation layer leads to sharp degradation of the GaN/LGS layer crystal quality. As a result of the performed research, an epitaxial GaN/LGS layer with a dislocation density of ~10{sup 11} cm{sup –2} and low surface roughness (<2 nm) is obtained.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed optical pumping at a wavelength of 1.11 μm, i.e., in the transparency range of bulk silicon. In similar InGaAs/GaAsSb/GaAs structures grown on GaAs substrates, room-temperature stimulated emission is observed at 1.17 μm. The results obtained are promising for integration of the structures into silicon-based optoelectronics.

36 MATERIALS SCIENCE↗

DOE OSTI2017

On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

The intense absorption of CO{sub 2} laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the detachment of GaN films from the sapphire. The threshold density of the laser energy at which n-GaN started to dissociate is 1.6 ± 0.5 J/cm{sup 2}. The mechanical-stress distribution and the surface morphology of GaN films and sapphire substrates before and after laser lift-off are studied by Raman spectroscopy, atomic-force microscopy, and scanning electron microscopy. A vertical Schottky diode with a forward current density of 100 A/cm{sup 2} at a voltage of 2 V and a maximum reverse voltage of 150 V is fabricated on the basis of a 9-μm-thick detached n-GaN film.

36 MATERIALS SCIENCE↗

DOE OSTI2017

On the detachment of thin ITO films from silicon substrate by microsecond laser irradiation

A method for the separation of thin ITO (indium-tin-oxide) films from a silicon substrate by pulsed laser irradiation is studied. The method enables the detachment of films with thicknesses of 360 nm and more without their destruction. The separation process consists in successive irradiation of the surface with single microsecond laser pulses at a wavelength of 650 nm. Upon being detached from silicon substrates, the films produced by high-frequency magnetron sputtering have a transmittance of 65% in the visible spectral range and a resistivity of ~1.2 kΩ/□. The thermal stresses appearing in thin ITO films and leading to their detachment are estimated.

36 MATERIALS SCIENCE↗

DOE OSTI2017

InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates

Indium-antimonide quantum dots are for the first time formed on the surface of an epitaxial In{sub 0.25}GaAsSb layer isoperiodic to a GaSb(001) substrate by liquid-phase epitaxy in the range of temperatures T = 450–467°C. Transmission electron microscopy shows that, the shape of quantum dots is close to a truncated cone and their distribution in terms of height and base size in the ensemble is monomodal. Large-sized quantum dots (with a base size of 30–50 nm and height of 3 nm) exhibit specific contrast in the plane-view diffraction-mode image, which is indicative of the presence of misfit defects. Modification of the chemical composition of the working surface of the substrate by the deposition of an epitaxial In{sub 0.25}GaAsSb layer makes possible a threefold increase in the density of the ensemble of InSb quantum dots (1 × 10{sup 10} cm{sup –2}) compared to the density in the case of deposition directly onto the GaSb binary compound.

36 MATERIALS SCIENCE↗

DOE OSTI2018

The Impact of the Substrate Material on the Optical Properties of 2D WSe{sub 2} Monolayers

2D-materials, especially transition metal dichalcogenides (TMDs) have drawn a lot of attention due to their remarkable characteristics rendering them a promising candidate for optical applications. While the basic properties are understood up to now, the influence of the environment has not been studied in detail, yet. Here we highlight a systematic comparison of the optical properties of tungsten diselenide monolayers on different substrates. Subtle changes in the emission spectrum and Raman signature have been found as well as surprisingly pronounced differences in the pump-power-dependent and time-resolved output at higher excitation densities. For all samples, exciton–exciton annihilation can be obtained. Nevertheless an analysis of different pump-dependent decay rates suggests substrate-dependent changes in the diffusion constant as well as exciton Bohr radius.

36 MATERIALS SCIENCE↗

DOE OSTI2018

MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer

The possibility in principle of the MBE (molecular-beam epitaxy) growth of GaP and InP nanowires on a SiC substrate with a graphene layer is demonstrated for the first time. InP nanowires on such a substrate have no stacking faults and possess an ideal crystallographic quality. At the same time, GaP nanowires have structural defects of the type of twins and the reversal of crystallographic phases at the top and at the base. The results of structural measurements demonstrate that the nanowires are formed in the wurtzite phase, which is not typical of bulk III–V materials.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates

The electrical properties of GaAs nanowires grown on a 6H-SiC (0001) substrate covered with graphene single layers and bilayers are studied. The nanowires are grown by molecular-beam epitaxy, with gold as a catalyst. The electrical properties are studied by measuring and analyzing the current–voltage characteristics of single nanowires vertically grown on a substrate. Numerical simulation of the experimental current–voltage curves revealed the presence of a ~0.6-V-high Schottky barrier between the nanowires and graphene. The appearance of the barrier is due to the formation of excess arsenic at the nanowire/graphene interface.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates

The results of studying the reverse dark currents of photodiodes for a wavelength of 1.06 μm grown on a GaAs substrate with the help of an InGaP metamorphic buffer layer are presented. The metalorganic chemical vapor epitaxy (MOCVD) growth technology of InGaP metamorphic buffer layers with a stepwise composition variation is developed. Photodiodes with a photosensitive area of 1 mm in diameter and radiation input through the substrate are fabricated. The photodiode dark current at room temperature and reverse bias of –3 V was 50 nA. It is assumed that the bulk component of the dark current is caused by the tunneling mechanism through the trap levels.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations

The growth features of GaN nanorods on patterned c-sapphire substrates with a regular microcone array having a different density and base diameter in the ranges of (1–5) × 10{sup 7} cm{sup –2} and 2.5–3.5 μm, respectively, are investigated. The kinetics is studied and the selective-growth regimes are determined for single GaN nanorods with a diameter of 30–100 nm at the vertices of microcones under radically lower growth rates on their slopes. The effect of the configuration of microcones, the substrate temperature, the roughness of the initial surface, and the presence of indium as a surfactant on the degree of growth selectivity is investigated.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2019

Laser Annealing of Thin ITO Films on Flexible Organic Substrates

Indium–tin oxide (ITO) thin films on polyethylene-terephthalate film substrates are fabricated at room temperature by reactive magnetron sputtering. The minimum of the resistivity of ITO films formed at room temperature is 4.5 × 10 -4 Ω cm. The laser annealing of ITO films from 140 to 600 nm in thickness increases their conductivity from 10 to 24% depending on the energy density to the film and irradiation dose. It is established that the laser annealing of films up to 250 nm in thickness is efficient at an energy density in the range from 12 to 35 mJ/cm 2 . Films from 390 to 600 nm in thickness should be annealed by laser radiation with an energy density of no lower than 46 mJ/cm 2 . A model problem taking into account the influence of radiative cooling and heat exchange of the film and the substrate on the variation in the film temperature over time during laser annealing is considered. A one-dimensional thermal conductivity equation for a bilayer medium is used. The maximal stresses in the ITO film under various annealing modes are calculated.