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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,477 records · Page 82
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Dynamic simulation platform to verify the performance of the reactor regulating system for a research reactor

Digital instrumentation and controls system technique is being introduced in new constructed research reactor or life extension of older research reactor. Digital systems are easy to change and optimize but the validated process for them is required. Also, to reduce project risk or cost, we have to make it sure that configuration and control functions is right before the commissioning phase on research reactor. For this purpose, simulators have been widely used in developing control systems in automotive and aerospace industries. In these literatures, however, very few of these can be found regarding test on the control system of research reactor with simulator. Therefore, this paper proposes a simulation platform to verify the performance of RRS (Reactor Regulating System) for research reactor. This simulation platform consists of the reactor simulation model and the interface module. This simulation platform is applied to I and C upgrade project of TRIGA reactor, and many problems of RRS configuration were found and solved. And it proved that the dynamic performance testing based on simulator enables significant time saving and improves economics and quality for RRS in the system test phase. (authors)

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
NASA NTRS1992

Opportunities for research on Space Station Freedom

NASA has allocated research accommodations on Freedom (equipment, utilities, etc.) to the program offices that sponsor space-based research and development as follows: Space Science and Applications (OSSA)--52 percent, Commercial Programs (OCP)--28 percent, Aeronautics and Space Technology (OAST)--12 percent, and Space Flight (OSF)--8 percent. Most of OSSA's allocation will be used for microgravity and life science experiments; although OSSA's space physics, astrophysics, earth science and applications, and solar system exploration divisions also will use some of this allocation. Other Federal agencies have expressed an interest in using Space Station Freedom. They include the National Institutes of Health (NIH), U.S. Geological Survey, National Science Foundation, National Oceanic and Atmospheric Administration, and U.S. Departments of Agriculture and Energy. Payload interfaces with space station lab support equipment must be simple, and experiment packages must be highly contained. Freedom's research facilities will feature International Standard Payload Racks (ISPR's), experiment racks that are about twice the size of a Spacelab rack. ESA's Columbus lab will feature 20 racks, the U.S. lab will have 12 racks, and the Japanese lab will have 10. Thus, Freedom will have a total of 42 racks versus 8 for Space lab. NASA is considering outfitting some rack space to accommodate small, self-contained payloads similar to the Get-Away-Special canisters and middeck-locker experiment packages flown on Space Shuttle missions. Crew time allotted to experiments on Freedom at permanently occupied capability will average 25 minutes per rack per day, compared to six hours per rack per day on Spacelab missions. Hence, telescience--the remote operation of space-based experiments by researchers on the ground--will play a very important role in space station research. Plans for supporting life sciences research on Freedom focus on the two basic goals of NASA 's space life sciences program: to ensure the health, safety, and productivity of humans in space and to acquire fundamental knowledge of biological processes. Space-based research has already shown that people and plants respond the same way to the microgravity environment: they lose structure. However, the mechanisms by which they respond are different, and researchers do not yet know much about these mechanisms. Life science research accommodations on Freedom will include facilities for experiments designed to address this and other questions, in fields such as gravitational biology, space physiology, and biomedical monitoring and countermeasures research.

Phillips, Robert W.↗
DOE OSTI2012

Probing buried organic-organic and metal-organic heterointerfaces by hard x-ray photoelectron spectroscopy

We present a nondestructive characterization method for buried hetero-interfaces for organic/organic and metal/organic systems using hard x-ray photoelectron spectroscopy (HAXPES) which can probe electronic states at depths deeper than {approx}10 nm. A significant interface-derived signal showing a strong chemical interaction is observed for Au deposited onto a C{sub 60} film, while there is no such additional feature for copper phthalocyanine deposited onto a C{sub 60} film reflecting the weak interaction between the molecules in the latter case. A depth analysis with HAXPES reveals that a Au-C{sub 60} intermixed layer with a thickness of 5.1 nm is formed at the interface.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Design and Realization of Ohmic and Schottky Interfaces for Oxide Electronics

Understanding band alignment and charge transfer at complex oxide interfaces is critical to tailoring and utilizing their diverse functionality. Toward this goal, both Ohmic- and Schottky-like charge transfers at oxide/oxide semiconductor/metal interfaces are designed and experimentally validated. A method for predicting band alignment and charge transfer in ABO 3 perovskites is utilized, where previously established rules for simple semiconductors fail. The prototypical systems chosen are the rare class of oxide metals, SrBO 3 with B = V–Ta, when interfaced with the multifaceted semiconducting oxide, SrTiO 3 . For B = Nb and Ta, it is confirmed that a large accumulation of charge occurs in SrTiO 3 due to the higher energy Nb and Ta states relative to Ti. Furthermore, this gives rise to a high mobility metallic interface, which is an ideal epitaxial oxide/oxide Ohmic contact. On the contrary, for B = V, there is no charge transfer into the SrTiO 3 interface, which serves as a highly conductive epitaxial gate metal. Going beyond these specific cases, this work opens the door to integrating the vast phenomena of ABO 3 perovskites into a wide range of practical devices.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Effects of barrier composition and electroplating chemistry on adhesion and voiding in copper/dielectric diffusion barrier films

The effects of electroplating chemistry and dielectric diffusion barrier composition on copper voiding and barrier adhesion are reported. Adhesion was quantified using the four-point bend thin film adhesion technique, and voiding in the Cu films was quantified using scanning electron microscopy. A total of 12 different film stacks were investigated, including three different Cu electroplating chemistries and four different barrier materials (SiN, N-doped SiC, O-doped SiC, and dual-layer SiC). Both plating chemistry and barrier composition have a large effect on interface adhesion and voiding in the Cu film. X-ray photoelectron spectroscopy was used to investigate the segregation of Cu electroplating impurities, such as S and Cl, to the Cu/barrier interface. Secondary ion mass spectrometry was used to quantify oxygen content at the Cu/barrier interface in a subset of samples. This interface oxygen content is correlated with measured adhesion values.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures

In this letter, we report on the interfacial abruptness of GaN/AlN/GaN heterostructures with pulsed laser atom probe tomography (APT). The samples were grown by plasma-assisted molecular beam epitaxy (MBE) under both metal-rich and N-rich conditions on both Ga-polar (0001) GaN templates and N-polar (0001) GaN substrates. An NH{sub 3} assisted MBE technique was involved to grow similar Ga-polar and N-polar structures on GaN:Fe substrates and GaN/Al{sub 2}O{sub 3} templates, respectively, for a comparison study. We find in all cases the interface with net positive polarization charge was chemically abrupt, whereas the interface with net negative polarization charge was diffuse. We discuss the implications on device design and performance. These data validate the efficiency of APT in studying interfaces for better performance in devices.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor–insulator–semiconductor heterojunction solar cell

Semiconductor–insulator–semiconductor heterojunction solar cells were prepared using atomic layer deposition (ALD) technique. The silicon surface was treated with oxygen and hydrogen plasma in different orders before dielectric layer deposition. A plasma-enhanced ALD process was applied to deposit dielectric Al{sub 2}O{sub 3} on the plasma pretreated n-type Si(100) substrate. Aluminum doped zinc oxide (Al:ZnO or AZO) was deposited by thermal ALD and serves as transparent conductive oxide. Based on transmission electron microscopy studies the presence of thin silicon oxide (SiO{sub x}) layer was detected at the Si/Al{sub 2}O{sub 3} interface. The SiO{sub x} formation depends on the initial growth behavior of Al{sub 2}O{sub 3} and has significant influence on solar cell parameters. The authors demonstrate that a hydrogen plasma pretreatment and a precursor dose step repetition of a single precursor improve the initial growth behavior of Al{sub 2}O{sub 3} and avoid the SiO{sub x} generation. Furthermore, it improves the solar cell performance, which indicates a change of the Si/Al{sub 2}O{sub 3} interface states.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiation

Phase transformation of amorphous-silicon during millisecond annealing using micro-thermal-plasma-jet irradiation was directly observed using a high-speed camera with microsecond time resolution. An oval-shaped molten-silicon region adjacent to the solid phase crystallization region was clearly observed, followed by lateral large grain growth perpendicular to a liquid-solid interface. Furthermore, leading wave crystallization (LWC), which showed intermittent explosive crystallization, was discovered in front of the moving molten region. The growth mechanism of LWC has been investigated on the basis of numerical simulation implementing explosive movement of a thin liquid layer driven by released latent heat diffusion in a lateral direction.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Electrical characterization of grain boundaries of CZTS thin films using conductive atomic force microscopy techniques

Graphical abstract: Experimental setup for conducting AFM (C-AFM). - Highlights: • Cu{sub 2}ZnSnS{sub 4} (CZTS) thin film was grown by reactive co-sputtering. • The electronic properties were probed using conducting atomic force microscope, scanning Kelvin probe microscopy and scanning capacitance microscopy. • C-AFM current flow mainly through grain boundaries rather than grain interiors. • SKPM indicated higher potential along the GBs compared to grain interiors. • The SCM explains that charge separation takes place at the interface of grain and grain boundary. - Abstract: Electrical characterization of grain boundaries (GB) of Cu-deficient CZTS (Copper Zinc Tin Sulfide) thin films was done using atomic force microscopic (AFM) techniques like Conductive atomic force microscopy (CAFM), Kelvin probe force microscopy (KPFM) and scanning capacitance microscopy (SCM). Absorbance spectroscopy was done for optical band gap calculations and Raman, XRD and EDS for structural and compositional characterization. Hall measurements were done for estimation of carrier mobility. CAFM and KPFM measurements showed that the currents flow mainly through grain boundaries (GB) rather than grain interiors. SCM results showed that charge separation mainly occurs at the interface of grain and grain boundaries and not all along the grain boundaries.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Diffusion and interface evolution during the atomic layer deposition of TiO{sub 2} on GaAs(100) and InAs(100) surfaces

Atomic layer deposition is used to form TiO{sub 2} films from tetrakis dimethyl amino titanium and H{sub 2}O on native oxide GaAs(100) and InAs(100) surfaces. The evolution of the film/substrate interface is examined as a function of the deposition temperature (100–325 °C) using ex situ x-ray photoelectron spectroscopy. An increase in the deposition temperature up to 250 °C leads to enhancement of the native oxide removal. For depositions at 300 °C and above, interface reoxidation is observed during the initial deposition cycles but when the films are thicker than 3 nm, the surface oxides are removed steadily. Based on these observations, two distinct film growth regimes are identified; up to 250 °C, layer-by-layer dominates while at higher temperatures island growth takes over. Angle resolved x-ray photoelectron spectroscopy measurements performed on 3 nm TiO{sub 2} film deposited at 325 °C on both surfaces demonstrates a very important difference between the two substrates: for GaAs the native oxides remaining in the stack are localized at the interface, while for InAs(100), the indium oxides are mixed in the TiO{sub 2} film.

36 MATERIALS SCIENCE↗
NASA NTRS2011

Comparison of the Booster Interface Temperature in Stainless Steel (SS) V-Channel Versus the Aluminum (Al) Y-Channel Primer Chamber Assemblies (PCAs): Appendices - Volume 2

NASA's Technical Fellow for Propulsion, requested a technical assessment of the performance improvement achieved by the introduction of the stainless steel (SS) V-channel compared to the aluminum (Al) Y-channel Primer Chamber Assembly (PCA) design. The SS V-channel PCA was developed for NASA's Mars Science Laboratory (MSL) Project. The principle focus of the assessment was to measure the transient temperature at the booster interface with both designs. This document contains the Appendices to the Volume I main report.

Garcia, Roberto↗
DOE OSTI2016

Enhanced photodegradation activity of methyl orange over Ag{sub 2}CrO{sub 4}/SnS{sub 2} composites under visible light irradiation

Highlights: • Novel visible-light-driven Ag{sub 2}CrO{sub 4}/SnS{sub 2} composites are synthesized. • Ag{sub 2}CrO{sub 4}/SnS{sub 2} exhibits higher photocatalytic activity than pure Ag{sub 2}CrO{sub 4} and SnS{sub 2}. • Ag{sub 2}CrO{sub 4}/SnS{sub 2} exhibits excellent stability for the photodegradation of MO. • The possible photocatalytic mechanism was discussed in detail. - Abstract: Novel Ag{sub 2}CrO{sub 4}/SnS{sub 2} composites were prepared by a simple chemical precipitation method and characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, UV–vis diffuse reflectance spectroscopy and photoluminescence spectroscopy. The visible light photocatalytic tests showed that the Ag{sub 2}CrO{sub 4}/SnS{sub 2} composites enhanced photocatalytic activities for the photodegradation of methyl orange (MO) under visible light irradiation (λ > 420 nm), and the optimum rate constant of Ag{sub 2}CrO{sub 4}/SnS{sub 2} at a weight content of 1.0% Ag{sub 2}CrO{sub 4} for the degradation of MO was 2.2 and 1.5 times larger than that of pure Ag{sub 2}CrO{sub 4} and SnS{sub 2}, respectively. The improved activity could be attributed to high separation efficiency of photogenerated electrons-hole pairs on the interface of Ag{sub 2}CrO{sub 4} and SnS{sub 2}, which arised from the synergistic effect between Ag{sub 2}CrO{sub 4} and SnS{sub 2}. Moreover, the possible photocatalytic mechanism with superoxide radical anions and holes species as the main reactive species in photocatalysis process was proposed on the basis of experimental results.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Ion Correlations Decrease Particle Aggregation Rate by Increasing Hydration Forces at Interfaces

The connection between solution structure, particle forces, and emergent phenomena at solid–liquid interfaces remains ambiguous. In this case study on boehmite aggregation, we established a connection between interfacial solution structure, emerging hydration forces between two approaching particles, and the resulting structure and kinetics of particle aggregation. In contrast to expectations from continuum-based theories, we observed a nonmonotonic dependence of the aggregation rate on the concentration of sodium chloride, nitrate, or nitrite, decreasing by 15-fold in 4 molal compared to 1 molal solutions. These results are accompanied by an increase in repulsive hydration forces and interfacial oscillatory features from 0.27–0.31 nm in 0.01 molal to 0.38–0.52 nm in 2 molal. Moreover, molecular dynamics (MD) simulations indicated that these changes correspond to enhanced ion correlations near the interface and produced loosely bound aggregates that retain electrolyte between the particles. In conclusion, we anticipate that these results will enable the prediction of particle aggregation, attachment, and assembly, with broad relevance to interfacial phenomena.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Formation of manganese {delta}-doped atomic layer in wurtzite GaN

We describe the formation of a {delta}-doped manganese layer embedded within c-plane wurtzite gallium nitride using a special molecular beam epitaxy growth process. Manganese is first deposited on the gallium-poor GaN (0001) surface, forming a {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign reconstructed phase. This well-defined surface reconstruction is then nitrided using plasma nitridation, and gallium nitride is overgrown. The manganese content of the {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign phase, namely one Mn per each {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign unit cell, implies that the MnGaN alloy layer has a Mn concentration of up to 33%. The structure and chemical content of the surface are monitored beginning from the initial growth stage up through the overgrowth of 20 additional monolayers (MLs) of GaN. An exponential-like drop-off of the Mn signal with increasing GaN monolayers, as measured by Auger electron spectroscopy, indicates that the highly concentrated Mn layer remains at the {delta}-doped interface. A model of the resultant {delta}-doped structure is formulated based on the experimental data, and implications for possible spintronic applications are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Observing structural reorientations at solvent–nanoparticle interfaces by X-ray diffraction – putting water in the spotlight

Nanoparticles are attractive in a wide range of research genres due to their size-dependent properties, which can be in contrast to those of micrometre-sized colloids or bulk materials. This may be attributed, in part, to their large surface-to-volume ratio and quantum confinement effects. There is a growing awareness that stress and strain at the particle surface contribute to their behaviour and this has been included in the structural models of nanoparticles for some time. One significant oversight in this field, however, has been the fact that the particle surface affects its surroundings in an equally important manner. It should be emphasized here that the surface areas involved are huge and, therefore, a significant proportion of solvent molecules are affected. Experimental evidence of this is emerging, where suitable techniques to probe the structural correlations of liquids at nanoparticle surfaces have only recently been developed. The recent validation of solvation shells around nanoparticles has been a significant milestone in advancing this concept. Restructured ordering of solvent molecules at the surfaces of nanoparticles has an influence on the entire panoply of solvent–particle interactions during, for example, particle formation and growth, adhesion forces in industrial filtration, and activities of nanoparticle–enzyme complexes. This article gives an overview of the advances made in solvent–nanoparticle interface research in recent years: from description of the structure of bulk solids and liquids via macroscopic planar surfaces, to the detection of nanoscopic restructuring effects. Water–nanoparticle interfaces are given specific attention to illustrate and highlight their similarity to biological systems.

36 MATERIALS SCIENCE↗
NASA NTRS2024

LESSH Lunar Experiment Support System and Handling Battery Charger Module

Beginning with Artemis III, NASA plans to deploy science instruments on the moon near a South Pole landing site. To extend lunar science operations, an EVA compatible LESSH Battery Charger Module (BCM) enables recharging and hard-line data transfer at the modular GFP Interface Bank on the Human Landing System (HLS) or other Artemis vehicles. The LESSH BCM provides an ergonomic interface for astronauts to connect instruments to HLS power and data interfaces. The BCM provides battery charge monitoring and enables data transfer via a flexible harness. LESSH-Placed is an instrument package that can be deployed by astronauts and re-charged via an Artemis vehicle, enabling extended science operations.

LESSH↗
DOE OSTI2018

Hanford Double Shell Tank Integrity Inspection - Integration of Customized Robotics - 18400

28 steel, double-shell, million gallon waste storage tanks located at the Hanford site in Washington State store both radioactive and hazardous waste. To monitor their condition and ensure continued viability, these tanks are inspected periodically through a comprehensive integrity program. In 2012, the first leak in a double-shell tank at Hanford was discovered in the 241-AY tank farm (Tank AY-102) and the failure was observed to be from the primary tank bottom. However, the exact failure location and damage mechanism have not been determined. A decision was made to pursue the capability to inspect the primary tank bottom region in order to provide additional tank integrity information. This work is particularly challenging due to the confined space in the double-shell tank annulus region (i.e. the 30 inch space between the primary and secondary tank shells), the limited dimensions of the tank risers that provide access to the annulus space (risers as small as 10 inches in diameter), and also the very small dimensions of the air channels in the concrete refractory pad that the primary waste storage tank rests on (channels are approximately two inches in diameter). Veolia Nuclear Solutions, along with Key Subcontractor Inuktun, were contracted to provide the capability to conduct these tank inspections in support of Hanford's double-shell tank integrity program. The Veolia Nuclear Solutions /Inuktun team designed, built, tested and delivered a tethered miniature robotic crawler system that utilizes the marsupial approach - a larger deployment crawler positions a smaller inspection crawler. The deployment crawler is installed via the tank riser, is magnetically coupled to the side of the tank shell, and drives to the selected deployment location at the end of one of the refractory channels where the small inspection robot is subsequently deployed. Operation of the equipment is controlled from a trailer outside the tank farm (a distance of several hundred feet). The system design includes a custom mechanism that provides for positioning and cable handling as well as the controls interface (laptop connected via control cables). The solution leveraged the Veolia Nuclear Solutions/Inuktun team's experience with delivering similar modular systems for other US and international sites. This simple but innovative solution delivered on an accelerated project schedule underlines the ability to provide effective robotic solutions to the nuclear industry. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2011

Optical Constants Determination of Samarium Holmium and Erbium in the 1.5-850 eV Spectral Range using a Transmittance Method

The optical constants {beta} and {sigma} of the complex refractive index {tilde n} = 1 - {delta} + i{beta} of Sm, Ho, and Er were obtained in the 1.5-850 eV energy range using a transmittance method. Thin films of Sm, Ho, and Dr were deposited by magnetron sputtering, and transmittance was measured using synchrotron radiation using a high vacuum condition. All films were directly coated on Si photodiodes, which were used as coating substrates, as well as photon detectors. Si was used as capping layer while a thin W layer was used as barrier against interface diffusion between Si and the highly reactive rare earth elements. The constants {beta} were extracted from transmittance results, and the constants {sigma} were calculated based on measured {beta} values using the Kramers-Kronig formalism. Small deficiencies determined from the present data using the partial sum rules were partially attributed to the sputtered film densities that could be slightly lower than the bulk values.

36 MATERIALS SCIENCE↗