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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,495 records · Page 83
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Detection and Localization of Damaged Photovoltaic Cells and Modules Using Spread Spectrum Time Domain Reflectometry

The operating efficiency of photovoltaic (PV) plants can be improved if damaged or degraded modules can be detected and identified. Currently, string-level power electronics can detect problems with modules or cabling but not locate them, which would facilitate addressing these issues. Here, we investigate the ability of spread spectrum time domain reflectometry (SSTDR) to both detect and locate/identify damaged cells and modules within a series-connected PV string. We tested the ability of SSTDR to detect and locate single-cell mini-modules and full-sized PV modules, which were intentionally damaged by impacts with a hammer (breaking the glass and damaging the silicon below) or by cutting through some or all busbars. Damage to the glass and silicon of cells was detected and located within a small string of minimodules. Busbar damage was detectable only if an open was created by cutting through all intercell busbars. Furthermore, physical impact damage to the glass and silicon of a full-sized PV module could be detected, but further development of signal processing is needed to achieve localization of such damaged modules within a string.

14 SOLAR ENERGY↗
DOE OSTI2021

Electric Drive Technology Trends, Challenges, and Opportunities for Future Electric Vehicles

The transition to electric road transport technologies requires electric traction drive systems to offer improved performances and capabilities, such as fuel efficiency (in terms of MPGe, i.e., miles per gallon of gasoline-equivalent), extended range, and fast-charging options. The enhanced electrification and transformed mobility are translating to a demand for higher power and more efficient electric traction drive systems that lead to better fuel economy for a given battery charge. To accelerate the mass-market adoption of electrified transportation, the U.S. Department of Energy (DOE), in collaboration with the automotive industry, has announced the technical targets for light-duty electric vehicles (EVs) for 2025. This article discusses the electric drive technology trends for passenger electric and hybrid EVs with commercially available solutions in terms of materials, electric machine and inverter designs, maximum speed, component cooling, power density, and performance. Additionally, the emerging materials and technologies for power electronics and electric motors are presented, identifying the challenges and opportunities for even more aggressive designs to meet the need for next-generation EVs. Some innovative drive and motor designs with the potential to meet the DOE 2025 targets are also discussed.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2021

Carrier Diffusion Lengths in Continuously Grown and Etched-and-Regrown GaN Pin Diodes

Advanced GaN power devices are promising for many applications in high power electronics but performance limitations due to material quality in etched-and-regrown junctions prevent their widespread use. Carrier diffusion length is a critical parameter that not only determines device performance but is also a diagnostic of material quality. Here we present the use of electron-beam induced current to measure carrier diffusion lengths in continuously grown and etched-and-regrown GaN pin diodes as models for interfaces in more complex devices. Variations in the quality of the etched-and-regrown junctions are observed and shown to be due to the degradation of the n-type material. Finally, we observe an etched-and-regrown junction with properties comparable to a continuously grown junction.

42 ENGINEERING↗
DOE OSTI2019

Soft Magnetic Multilayered FeSiCrB–Fe$_{x}$N Metallic Glass Composites Fabricated by Spark Plasma Sintering

Novel multilayered FeSiCrB–Fe $_{x}$ N ( x = 2–4) metallic glass composites were fabricated using spark plasma sintering of FeSiCrB amorphous ribbons (Metglas 2605SA3 alloy) and Fe $_{x}$ N ( x = 2–4) powder. Crystalline Fe $_{x}$ N can serve as a high magnetic moment, high electrical resistance binder, and lamination material in the consolidation of amorphous and nanocrystalline ribbons, mitigating eddy currents while boosting magnetic performance and stacking factor in both wound and stacked soft magnetic cores. Stacking factors of nearly 100% can be achieved in an amorphous ribbon/iron nitride composite. FeSiCrB–Fe $_{x}$ N multilayered metallic glass composites prepared by spark plasma sintering have the potential to serve as a next-generation soft magnetic material in power electronics and electrical machines.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Student Chapter at Virginia Tech Resurrected [Society News]

The IEEE Power Electronics Society (PELS) Student Chapter at Virginia Tech, Blacksburg, hosted Prof. Pat Wheeler from the University of Nottingham, United Kingdom, on 10 April as part of the PELS Distinguished Lecturer Program. He gave an engaging talk, “Electric Superbike Racing: The Design and Construction of a Series Winning Electric Motorbike,” to approximately 30 Virginia Tech undergraduate and graduate students in engineering (electrical, computer, mechanical, industrial, and even biomedical) as well as industrial design and computer science (Figure 1).

42 ENGINEERING↗
DOE OSTI2025

Electromagnetic Transient Simulation of Photovoltaic Inverter Using Implicit-Explicit Solver

This paper introduces the implementation of electromagnetic transient (EMT) simulations of a photovoltaic (PV) inverter module using the Implicit-Explicit (ImEx) solver in the Suite of Nonlinear and Differential/Algebraic Equation Solvers (SUNDIALS). This study demonstrates the effectiveness of the ImEx solver in overcoming the challenges inherent in simulating the complex dynamics of PV inverter modules. Furthermore, using SUNDIALS’ ImEx solver module ARKODE for EMT simulation automates key aspects of the process, such as numerical integration, providing substantial benefits including enhanced consistency, faster implementation, reduced human error, and the capability to handle the complexities of advanced numerical integration. By conducting comparative simulations with an implicit method used in commercial software, the research showcases the ImEx solver’s capability in achieving high accuracy and reliability. Results indicate that leveraging the ImEx approach significantly enhances modeling fidelity and reduces simulation setup times, offering a promising tool for the EMT analysis of PV inverter systems in power electronics-dominated power grids.

Choi, Jongchan [ORNL] (ORCID:000000025952455X)↗
DOE OSTI2021

SiC and GaN Devices With Cryogenic Cooling

This article presents the cryogenically cooled application for wide bandgap (WBG) semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at cryogenic temperatures are illustrated. SiC MOSFETs exhibit increased on-state resistance and slower switching speed at cryogenic temperatures. However, cryogenic cooling provides low ambient temperature environment and thus enables the SiC converter to operate at lower junction temperature to achieve higher efficiency compared to room temperature cooling. A cryogenically cooled MW-level SiC inverter prototype is developed and demonstrated the feasibility of operating high-power SiC converter with cryogenic cooling. GaN HEMTs exhibit more than five times on-state resistance reduction and faster switching speed at cryogenic temperatures which makes GaN HEMTs an excellent candidate for cryogenic power electronics applications. The significantly reduced on-state resistance of GaN devices provides the possibility to operate them at a current level much higher than rated current at cryogenic temperatures. A GaN double pulse test (DPT) circuit is constructed and demonstrated that GaN HEMTs can operate at nearly four times of rated current at cryogenic temperatures. Challenges of utilizing WBG device with cryogenic cooling are discussed and summarized.

42 ENGINEERING↗
DOE OSTI2021

Real-time Implementation of a Dual-Active-Bridge Based Multi-Level Photovoltaic Converter

Silicon-carbide based, multi-level converters with dual-active-bridge (DAB) are getting attention for medium voltage, direct grid-connected, utility-scale photovoltaic (PV) applications due to their higher efficiency and power density. To de-risk complex control development for these high-voltage and high-power inverters, hardware-in-the-loop techniques are often required. Due to the high switching frequency and the large number of power electronic switches, off-the-shelf, real-time simulation tools are not yet fully developed for this application, even with FPGA-based simulators. To address this, a new co-simulation approach in FPGA is presented that utilizes Time-Stamped Bridge (TSB) for the higher frequency converters along with detailed fixed conductance based discrete device simulation of the rest of the circuit. A complex DAB-based PV converter with maximum switching frequency of 50 kHz is successfully simulated in real-time in the FPGA and the results are compared with offline simulation results. A controller hardware-in-the-loop (CHIL) platform is developed to demonstrate real-time, closed-loop test results for this DAB-based PV converter.

Dong, Zerui↗
DOE OSTI2021

Revisiting the Effects of Photovoltaic Module Efficiency on Installed System Cost and Market Adoption

We conduct bottom-up analysis of how PV module efficiency could influence residential rooftop installed system costs, using models with improved representation of how soft costs and power electronics are affected by efficiency. We show that the amount of system installed cost savings resulting from high efficiency modules depends on whether or not the system is area-constrained, with much larger savings for the area-constrained case. We then estimate the fraction of physically area-constrained rooftops in the United States to be 61%, with variation between 20% to over 80% of rooftops depending on the state. We find that fraction of area-constrained systems could grow to over 88% by 2050 if building and transportation loads are electrified.

efficiency↗
DOE OSTI2023

Additive Manufacturing of Coreless Flyback Transformers Using Aerosol Jet Printing and Electrochemical Deposition

An additive manufacturing approach combining aerosol jet printing (AJP) and electrodeposition opens a new pathway to the production of lightweight coreless flyback transformer devices for power electronics. AJP of seed layers with resolution on the order of 30 μm is combined with electrodeposition of Cu and Ni for decreased resistance. This combined approach addresses known shortcomings of AJP and electrodeposition. Nanoparticle inks used in AJP of metals have low conductivity versus bulk materials due to their high grain boundary resistance. There is a lack of readily available high-resolution patterning techniques for electrodeposition outside of expensive clean-room-based lithography techniques. Combining these two techniques enables the patterning of high-resolution, high-conductivity components. Here in this manuscript, we report on the construction of coreless flyback transformers consisting of two-layer primary and two-layer secondary spiral inductors separated by layers of a printed UV-curable dielectric. An input voltage of 17 V at 400 kHz was amplified to an output of 1250 V corresponding to a gain of 73.5. COMSOL modeling at the individual inductor level and at the transformer level was used to compare expected inductance, equivalent series resistance (ESR), and coupling with experimentally measured values.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices

Edge termination is the key building block in power devices to enable near-ideal, avalanche breakdown voltage (BV). Here, this work presents the design, fabrication, and physics of a GaN guard ring (GR) edge termination formed by selective-area nitrogen implantation through an epitaxial p-GaN layer. The fabrication of this termination only includes a single implantation step that does not require precise control of implant depth, rendering a large process latitude. The selective-area implantation produces p-GaN rings that are separated by the implanted, semi-insulating regions. The number and spacing of the p-type rings are found to determine the BV of the vertical GaN p-n diode. The 16-ring structure enables a BV of 1800 V, being 88% of the theoretical 1-D parallel-plane limit. Avalanche characteristics are observed in devices with a large variety of GR designs. Finally, we present a comprehensive survey on the efficiency, fabrication complexity, real estate, and avalanche capability of various edge termination techniques that have been reported in vertical GaN devices. The high efficiency (among the highest reported in avalanche-capable GaN terminations), simple and robust fabrication process, and uniform avalanche capability make this implanted GR a promising edge termination for high-voltage GaN devices.

42 ENGINEERING↗
DOE OSTI2020

Comparison and Discussion on Shortcircuit Protections for Silicon-Carbide MOSFET Modules: Desaturation Versus Rogowski Switch-Current Sensor

Survivability of silicon-carbide (SiC) mosfet modules during short circuit (SC) is essential for modern power electronics systems due to large economic implications. SiC mosfet modules exhibit narrow SC withstand times and generally much lower SC robustness than silicon (Si) insulated-gate bipolar transistors (IGBTs). This puts a critical concern on their utilization, further stressing the importance of reliable protection. This article presents a comprehensive analysis and discussion on the SiC mosfet module SC protection and performance comparison between conventional desaturation detection, previously used for Si IGBT protection, and Rogowski switch-current sensor (RSCS) detection. In addition, this article presents the experimental design for soft turn-off as a reaction to the SC detection to avoid excessive overshoots during the abrupt turn-off of the SC current. To perform different types of SC with various fault inductances on different temperatures, and for the sake of fair comparison under the same conditions, a gate-driver unit for 1.2 kV SiC mosfet half-bridge modules is developed containing both detection methods. The results demonstrate that both methods are successful in protecting the module in all SC types, with superiority of the RSCS detection and concerns for desaturation detection in high-inductance and high dc-bus voltage SC events.

42 ENGINEERING↗
DOE OSTI2024

Robust Disturbance Rejection Rotor Current Control of Doubly-Fed Induction Generators

This article proposes a robust transient disturbance rejection current controller (TDRCC) to improve the transient performance of doubly-fed induction generators (DFIGs) in wind turbines during grid disturbances, such as short circuits. Here, the proposed robust TDRCC replaces the proportional-integral-derivative (PID) current controllers conventionally used in the vector control scheme of the DFIG rotor side converter (RSC). The TDRCC estimates the transient disturbances caused by grid faults or other external disturbances and provides compensation to the DFIG rotor voltage in the current control loops of the RSC to improve the robustness of the controller to disturbance. A sliding-mode current controller (SMCC) is also designed to highlight the transient performance improvement of the DFIG using the TDRCC over the state-of-the-art control methods during grid short circuit faults. Simulation studies are conducted in PSCAD/EMTDC for a 3.6-MW DFIG wind turbine with the proposed TDRCC, the conventional PI controller, and the SMCC, respectively during the most severe balanced three-phase grid short circuit fault specified by the U.S. grid code as well as an unbalance single-phase grid short circuit fault. Hardware experiments are conducted on a 200-W DFIG wind turbine emulator with the three different controllers for the same three-phase short circuit fault. Simulation and hardware experiment results show that the TDRCC reduces the peak rotor current significantly when compared with the PI and SMCC controlled DFIG system and, therefore, would help prolong the lifespan of the DFIG's power electronics and reduce maintenance costs.

42 ENGINEERING↗
DOE OSTI2024

A Neural Network-Based Power Mismatch Elimination Strategy for Integrated Solar and ESS AC/DC Systems (MARS)

The multiport autonomous reconfigurable solar power plant (MARS) is a promising concept for the integration of photovoltaic (PV) and energy storage system (ESS) to the transmission ac grid and a high-voltage direct current (HVdc) link. The presence of PV and ESS in each arm of the MARS results in uneven distribution of active power among different submodules (SMs), thereby leading to unbalanced SM capacitor voltages and potentially compromising the system stability. Moreover, in the case of partial shadings, shaded PV SMs will suffer from decreased power injections causing power mismatch in the MARS system. To address this issue, a neural-network-based power mismatch elimination (NNPME) strategy is proposed in this article. The proposed NNPME strategy optimizes ESS usage and leverages both dc and ac circulating currents to facilitate power transfer among the SMs, arms, and phases of the MARS system. Simulation and control hardware-in-the-loop (cHIL) experiments demonstrate the effectiveness of the proposed NNPME strategy. Compared with the traditional approaches, the proposed NNPME strategy can significantly enhance system efficiency and ensure stable and continuous operation, even in the presence of uneven power distribution within the MARS system.

14 SOLAR ENERGY↗
DOE OSTI2017

Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices

This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiC MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2018

A Novel Interfacing Technique for Distributed Hybrid Simulations Combining EMT and Transient Stability Models

With steady increase of power electronic devices and nonlinear dynamic loads in large scale AC/DC systems, the traditional hybrid simulation method, which incorporates these components into a single EMT subsystem and hence causes great difficulty for network partitioning and significant deterioration in simulation efficiency. To resolve these issues, a novel distributed hybrid simulation method is proposed in this paper. The key to realize this method is a distinct interfacing technique, which includes: i) a new approach based on the two-level Schur complement to update the interfaces by taking full consideration of the couplings between different EMT subsystems; and ii) a combined interaction protocol to further improve the efficiency while guaranteeing the simulation accuracy. The advantages of the proposed method in terms of both efficiency and accuracy have been verified by using it for the simulation study of an AC/DC hybrid system including a two-terminal VSC-HVDC and nonlinear dynamic loads.

Distributed hybrid simulation↗
DOE OSTI2020

A study on the impact of mid-gap defects on vertical GaN diodes

GaN is a favorable martial for future efficient high voltage power switches. GaN has not dominated the power electronics market due to immature substrate, homoepitaxial growth, and immature processing technology. Understanding the impact of the substrate and homoepitaxial growth on the device performance is crucial for boosting the performance of GaN. Here, we studied vertical GaN PiN diodes that were fabricated on non-homogenous Hydride Vapor Phase Epitaxy (HVPE) substrates from two different vendors. We show that defects which stemmed from growth techniques manifest themselves as leakage hubs. Different non-homogenous substrates showed different distribution of those defects spatially with the lesser quality substrates clustering those defects in clusters that causes pre-mature breakdown. Energetically these defects are mostly mid-gap around 1.8Ev with light emission spans from 450nm to 700nm. Photon emission spectrometry and hyperspectral electroluminescence were used to locate these defects spatially and energetically.

42 ENGINEERING↗