Structural feature controlling superconductivity in compressed BaFe[subscript 2]As[subscript 2]
Abstract not provided
Yang, Wenge↗
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Decrease of the surface resistance in superconducting niobium resonator cavities by the microwave field
Measurements of the quality factor, Q, of Nb superconducting microwave resonators often show that Q increases by ≃10%–30% with increasing radio-frequency (rf) field, H, up to ∼15–20 mT. Recent high temperature heat treatments can amplify this rf field-induced increase of Q up to ≃50%–100% and extend it to much higher fields ≃100 mT, but the mechanisms of the enhancement of Q(H) remain unclear. Here, we suggest a method to reveal these mechanisms by measuring temperature dependencies of Q at different rf field amplitudes. We show that the increase of Q(H) does not come from a field dependent quasi-particles activation energy or residual resistance, but rather results from the smearing of the density of state by the rf field.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Epitaxial c-axis oriented BaTiO{sub 3} thin films on SrTiO{sub 3}-buffered Si(001) by atomic layer deposition
Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO{sub 3} (BTO) on Si(001) using a thin (1.6 nm) buffer layer of SrTiO{sub 3} (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225 °C used barium bis(triisopropylcyclopentadienyl), titanium tetraisopropoxide, and water as co-reactants. X-ray diffraction (XRD) reveals a high degree of crystallinity and c-axis orientation of as-deposited BTO films. Crystallinity is improved after vacuum annealing at 600 °C. Two-dimensional XRD confirms the tetragonal structure and orientation of 7–20-nm thick films. The effect of the annealing process on the BTO structure is discussed. A clean STO/Si interface is found using in-situ X-ray photoelectron spectroscopy and confirmed by cross-sectional scanning transmission electron microscopy. The capacitance-voltage characteristics of 7–20 nm-thick BTO films are examined and show an effective dielectric constant of ∼660 for the heterostructure.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Tunneling spectroscopy of superconducting MoN and NbTiN grown by atomic layer deposition
A tunneling spectroscopy study is presented of superconducting MoN and Nb{sub 0.8}Ti{sub 0.2}N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2 meV and 2.4 meV, respectively, with a corresponding critical temperature of 11.5 K and 13.4 K, among the highest reported T{sub c} values achieved by the ALD technique. Tunnel junctions were obtained using a mechanical contact method with a Au tip. While the native oxides of these films provided poor tunnel barriers, high quality tunnel junctions with low zero bias conductance (below ∼10%) were obtained using an artificial tunnel barrier of Al{sub 2}O{sub 3} on the film's surface grown ex situ by ALD. We find a large critical current density on the order of 4 × 10{sup 6} A/cm{sup 2} at T = 0.8T{sub c} for a 60 nm MoN film and demonstrate conformal coating capabilities of ALD onto high aspect ratio geometries. These results suggest that the ALD technique offers significant promise for thin film superconducting device applications.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Excitons in a quasi-one-dimensional quantum nanorod under a strong electric field
The response of an exciton in the ground and first excited states to a strong DC electric field is studied in a quasi-one-dimensional nano quantum well (i.e., nanorod) bounded by high symmetric barriers by studying the energy, the oscillator strength, the root-mean-square (RMS) average of the electron-hole (e-h) separation, and the average positions of the electron and the hole. The interplaying effect between the barrier confinement, e-h attraction, and the field-induced e-h separation for exciton binding is examined. We find that, for a long nanorod, the exciton energy, as well as, the oscillator strength drops abruptly as a function of the field near the exciton-dissociation field while the RMS average of the e-h separation rises rapidly. For shorter rods, the transition is more gradual due to the combined effect of the confinement and the long-range e-h interaction. A strong field is shown to transform the optically-inactive first excited state into an optically-active state in the field range between the dissociation field of the ground state and that of the first excited level. We also find that, in the ground state, the (lighter) electron is dragged by the (heavier) hole below the dissociation field. The dependence of the above mentioned properties on the rod length is also investigated for varying fields. The results are compared with those obtained for the rods with parabolic confinement.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Droplet destabilization during Bi catalyzed vapor-liquuid-solid growth of GaAs
GaAs nanodiscs are grown in a molecular beam epitaxy chamber via the vapor-liquid-solid mechanism with liquid Bi as the catalyst. Each nanostructure consists of a series of increasingly larger overlapping discs. The structure forms during deposition due to the fact that the catalyst grows until reaching a critical size whereupon it destabilizes, dropping off the disc onto the substrate, where it catalyzes the growth of a new disc of larger radius. It is shown that critical size is limited by the sidewall wetting with a contact angle significantly smaller than the Gibb's criterion.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Structural and electronic modification of photovoltaic SnS by alloying
Emergence of a terawatt scalable photovoltaic (PV) thin film technology is currently impeded by the limited supply of relatively rare elements like In or Te, which has spurred active research in recent years on earth-abundant PV materials. Instead of searching for alternative PV materials, we approach the problem here by structural modification through alloying of a known PV material, namely, tin sulfide. Although SnS is a strong visible light absorber that is naturally p-doped, its indirect band gap reduces the open circuit voltage of SnS-based solar cells. The anisotropic crystal structure results in undesirable anisotropic transport properties. Based on the observation that the isoelectronic sulfides MgS, CaS, and SrS assume the rock-salt structure, we use ab initio calculations to explore the structure and electronic properties of metastable Sn{sub 1−x}(II){sub x}S (II = Mg, Ca, Sr) alloys, finding that the isotropic rock-salt phase is stabilized above x = 0.2–0.3, and predicting direct band gaps in the range of interest for PV applications, i.e., 0.6–1.5 eV for Ca and Sr alloying. We subsequently synthesized such Sn{sub 1−x}(Ca){sub x}S films by pulsed laser deposition, confirmed the cubic rock-salt structure, and observed optical band gaps between 1.1 and 1.3 eV. These results highlight the potential of structural modification by alloying as a route to widen the otherwise limited materials base for promising earth-abundant materials.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Role of the interface on radiation damage in the SrTiO{sub 3}/LaAlO{sub 3} heterostructure under Ne{sup 2+} ion irradiation
We systematically investigated the microstructural evolution of heteroepitaxial SrTiO{sub 3} (STO) thin films grown on a single crystal LaAlO{sub 3} (LAO) (001) substrate, focusing on the response of the STO/LAO interface to Ne{sup 2+} irradiation at room temperature. Cross sectional transmission electron microscope (TEM) analysis reveals that the LAO crystal amorphizes first after a relatively low dose of damage followed by the amorphization of the STO film after irradiation to a higher dose. While the critical dose to amorphize differs between each material, amorphization begins at the interface and proceeds outward in both cases. Thus, a crystalline/amorphous interface first forms at the STO/LAO interface by a dose of 1 dpa, and then an amorphous/amorphous interface forms when the dose reaches 3 dpa. Scanning TEM and x-ray energy dispersive spectroscopy indicate no significant heavy cation elemental diffusion, though electron energy loss spectroscopy reveals a redistribution of oxygen across the film/substrate interface after Ne{sup 2+} irradiation. Atomistic calculations are used to interpret the experimental findings in terms of the defect properties in each of the two component phases.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy
Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without breaking vacuum, and convenient visual access to the sample and tip inside a superconducting magnet cryostat. A sample/tip handling system is optimized for both the molecular beam epitaxy growth system and the scanning tunneling microscope system. The sample/tip handing system enables in situ STM studies on epitaxially grown samples, and tip exchange in the superconducting magnet cryostat. The hybrid molecular beam epitaxy and low temperature scanning tunneling microscopy system is capable of growing semiconductor-based hetero-structures with controlled accuracy down to a single atomic-layer and imaging them down to atomic resolution.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Asymmetric “melting” and “freezing” kinetics of the magnetostructural phase transition in B2-ordered FeRh epilayers
Synchrotron X-ray diffraction was used to study the phase transformation processes during the magnetostructural transition in a B2-ordered FeRh (001)-oriented epilayer grown on MgO by sputtering. Out-of-plane lattice constant measurements within the hysteretic regime of the transition reveal a microstructure consistent with the coexistence of lattice-expanded and contracted phases in spatially distinct regions. It was found that the phase separation is more pronounced during cooling than heating. Furthermore, whilst lattice-expanded domains that span the height of the film can be undercooled by several kelvins, there is no equivalent superheating. This asymmetry between the cooling and heating processes in FeRh is consistent with the difference in the kinetics of generic freezing and melting transitions.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Epitaxy of polar semiconductor Co{sub 3}O{sub 4} (110): Growth, structure, and characterization
The (110) plane of Co{sub 3}O{sub 4} spinel exhibits significantly higher rates of carbon monoxide conversion due to the presence of active Co{sup 3+} species at the surface. However, experimental studies of Co{sub 3}O{sub 4} (110) surfaces and interfaces have been limited by the difficulties in growing high-quality films. We report thin (10–250 Å) Co{sub 3}O{sub 4} films grown by molecular beam epitaxy in the polar (110) direction on MgAl{sub 2}O{sub 4} substrates. Reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and transmission electron microscopy measurements attest to the high quality of the as-grown films. Furthermore, we investigate the electronic structure of this material by core level and valence band x-ray photoelectron spectroscopy, and first-principles density functional theory calculations. Ellipsometry reveals a direct band gap of 0.75 eV and other interband transitions at higher energies. A valence band offset of 3.2 eV is measured for the Co{sub 3}O{sub 4}/MgAl{sub 2}O{sub 4} heterostructure. Magnetic measurements show the signature of antiferromagnetic ordering at 49 K. FTIR ellipsometry finds three infrared-active phonons between 300 and 700 cm{sup −1}.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Effect of hydrocarbon adsorption on the wettability of rare earth oxide ceramics
Vapor condensation is routinely used as an effective means of transferring heat, with dropwise condensation exhibiting a 5 − 7x heat transfer improvement compared to filmwise condensation. However, state-of-the-art techniques to promote dropwise condensation rely on functional hydrophobic coatings, which are often not robust and therefore undesirable for industrial implementation. Natural surface contamination due to hydrocarbon adsorption, particularly on noble metals, has been explored as an alternative approach to realize stable dropwise condensing surfaces. While noble metals are prohibitively expensive, the recent discovery of robust rare earth oxide (REO) hydrophobicity has generated interest for dropwise condensation applications due to material costs approaching 1% of gold; however, the underlying mechanism of REO hydrophobicity remains under debate. In this work, we show through careful experiments and modeling that REO hydrophobicity occurs due to the same hydrocarbon adsorption mechanism seen previously on noble metals. To investigate adsorption dynamics, we studied holmia and ceria REOs, along with control samples of gold and silica, via X-Ray photoelectron spectroscopy (XPS) and dynamic time-resolved contact angle measurements. The contact angle and surface carbon percent started at ≈0 on in-situ argon-plasma-cleaned samples and increased asymptotically over time after exposure to laboratory air, with the rare earth oxides displaying hydrophobic (>90°) advancing contact angle behavior at long times (>4 days). The results indicate that REOs are in fact hydrophilic when clean and become hydrophobic due to hydrocarbon adsorption. Furthermore, this study provides insight into how REOs can be used to promote stable dropwise condensation, which is important for the development of enhanced phase change surfaces.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Thermal transport in shock wave–compressed solids using pulsed laser heating
A pulsed laser heating method was developed for determining thermal transport properties of solids under shock-wave compression. While the solid is compressed, a laser deposits a known amount of heat onto the sample surface, which is held in the shocked state by a transparent window. The heat from the laser briefly elevates the surface temperature and then diffuses into the interior via one-dimensional heat conduction. The thermal effusivity is determined from the time history of the resulting surface temperature pulse, which is recorded with optical pyrometry. Thermal effusivity is the square root of the product of thermal conductivity and volumetric heat capacity and is the key thermal transport parameter for relating the surface temperature to the interior temperature of the sample in a dynamic compression experiment. Therefore, this method provides information that is needed to determine the thermodynamic state of the interior of a compressed metal sample from a temperature measurement at the surface. The laser heat method was successfully demonstrated on tin that was shock compressed with explosives to a stress and temperature of ∼25 GPa and ∼1300 K. In this state, tin was observed to have a thermal effusivity of close to twice its ambient value. The implications on determining the interior shock wave temperature of tin are discussed.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Sub-100 ps laser-driven dynamic compression of solid deuterium with a ∼40 μJ laser pulse
We dynamically compress solid deuterium over <100 ps from initial pressures of 22 GPa to 55 GPa, to final pressures as high as 71 GPa, with <40 μJ of pulse energy. At 25 GPa initial pressure, we measure compression wave speeds consistent with quasi-isentropic compression and a 24% increase in density. The laser drive energy per unit density change is 10{sup 9} times smaller than it is for recent longer (∼30 ns) time scale compression experiments. This suggests that, for a given final density, dynamic compression of hydrogen might be achieved using orders of magnitude lower laser energy than currently used.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots
We have examined the origins of interlayer formation and misfit dislocation (MD) displacement in the vicinity of InAs/GaAs quantum dots (QDs). For QDs formed by the Stranski-Krastanov mode, regularly spaced MDs nucleate at the interface between the QD and the GaAs buffer layer. In the droplet epitaxy case, both In island formation and In-induced “nano-drilling” of the GaAs buffer layer are observed during In deposition. Upon annealing under As flux, the In islands are converted to InAs QDs, with an InGaAs interlayer at the QD/buffer interface. Meanwhile, MDs nucleate at the QD/interlayer interface.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Unambiguous separation of the inverse spin Hall and anomalous Nernst effects within a ferromagnetic metal using the spin Seebeck effect
In this paper, the longitudinal spin Seebeck effect is measured on the ferromagnetic insulator Fe 3 O 4 with the ferromagnetic metal Co 0.2 Fe 0.6 B 0.2 (CoFeB) as the spin detector. By using a non-magnetic spacer material between the two materials (Ti), it is possible to decouple the two ferromagnetic materials and directly observe pure spin flow from Fe 3 O 4 into CoFeB. It is shown that in a single ferromagnetic metal, the inverse spin Hall effect (ISHE) and anomalous Nernst effect (ANE) can occur simultaneously with opposite polarity. Using this and the large difference in the coercive fields between the two magnets, it is possible to unambiguously separate the contributions of the spin Seebeck effect from the ANE and observe the degree to which each effect contributes to the total response. Finally, these experiments show conclusively that the ISHE and ANE in CoFeB are separate phenomena with different origins and can coexist in the same material with opposite response to a thermal gradient.
36 MATERIALS SCIENCE↗
Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films
We utilize the unique dispersion properties of leaky plasmon polaritons in epsilon-near-zero (ENZ) thin films to demonstrate thermal radiation control. Owing to its highly flat dispersion above the light line, a thermally excited leaky wave at the ENZ frequency out-couples into free space without any scattering structures, resulting in a narrowband, wide-angle, p-polarized thermal emission spectrum. We demonstrate this idea by measuring angle- and polarization-resolved thermal emission spectra from a single layer of unpatterned, doped semiconductors with deep-subwavelength film thickness (d/λ{sub 0} ∼ 6×10{sup −3}, where d is the film thickness and λ{sub 0} is the free space wavelength). We show that this semiconductor ENZ film effectively works as a leaky wave thermal radiation antenna, which generates far-field radiation from a thermally excited mode. The use of semiconductors makes the radiation frequency highly tunable by controlling doping densities and also facilitates device integration with other components. Therefore, this leaky plasmon polariton emission from semiconductor ENZ films provides an avenue for on-chip control of thermal radiation.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Etalon-induced baseline drift and correction in atom flux sensors based on atomic absorption spectroscopy
Atom flux sensors based on atomic absorption (AA) spectroscopy are of significant interest in thin film growth as they can provide unobtrusive, element specific real-time flux sensing and control. The ultimate sensitivity and performance of these sensors are strongly affected by baseline drift. Here we demonstrate that an etalon effect resulting from temperature changes in optical viewport housings is a major source of signal instability, which has not been previously considered, and cannot be corrected using existing methods. We show that small temperature variations in the fused silica viewports can introduce intensity modulations of up to 1.5% which in turn significantly deteriorate AA sensor performance. This undesirable effect can be at least partially eliminated by reducing the size of the beam and tilting the incident light beam off the viewport normal.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗