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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,495 records · Page 83
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Self‐consistent transport simulation of boron dust particle injection in the peripheral plasma in Large Helical Device

Abstract The trajectories and the ablation positions of boron dust particles dropped from an impurity powder dropper in the peripheral plasma in the Large Helical Device (LHD) were calculated using a three‐dimensional edge plasma simulation code (EMC3‐EIRENE) and a dust transport simulation code (DUSTT). The simulation shows that the trajectory of the boron dust particles is deflected at the upper divertor leg due to the effect of the hydrogen plasma flow, and the ablation positions of the dust particles in an ergodic layer change toward the outboard side of the torus for higher plasma densities. The effect of the boron ion flow in the divertor leg on the deflection is investigated by coupling the two codes self‐consistently. The simulation predicts that the boron ions in the divertor leg, which are produced by sputtering on the divertor plates, which do not affect the change in the ablation positions. It also shows that the ablation positions move toward the inboard side and approach the Last Closed Flux Surface (LCFS) in case of increased boron dust drop rates, which is caused by the lowered plasma flow in the upper divertor leg due to the lowered electron temperature by radiation cooling by the dropped dust particles.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2017

Towards All-Inorganic Transport Layers for Wide-Band-Gap Formamidinium Lead Bromide-Based Planar Photovoltaics

Hybrid perovskite photovoltaic devices heavily rely on the use of organic (rather than inorganic) charge-transport layers on top of a perovskite absorber layer because of difficulties in depositing inorganic materials on top of these fragile absorber layers. However, in comparison to the unstable and expensive organic transport materials, inorganic charge-transport layers provide improved charge transport and stability to the device architecture. Here, we report photovoltaic devices using all-inorganic transport layers in a planar p-i-n junction device configuration using formamidinium lead tribromide (FAPbBr 3 ) as an absorber. Efficient planar devices are obtained through atomic layer deposition of nickel oxide and sputtered zinc oxide as hole- and electron-transport materials, respectively. Using only inorganic charge-transport layers resulted in planar FAPbBr 3 devices with a power conversion efficiency of 6.75% at an open-circuit voltage of 1.23 V. In conclusion, the transition of planar FAPbBr 3 devices making from all-organic towards all-inorganic charge-transport layers is studied in detail.

14 SOLAR ENERGY↗
DOE OSTI2017

Evaluating the economic viability of CdTe/CIS and CIGS/CIS tandem photovoltaic modules

In this paper, we analyze the potential cost competitiveness of two frameless, glass–glass thin-film tandem photovoltaic module structures, cadmium telluride (CdTe)/CuInSe 2 (CIS) and CuIn 0.3 Ga 0.7 Se 2 (CIGS)/CIS, based on the demonstrated cost of manufacturing the respective component cell technologies in high volume. To consider multiple economic scenarios, we base the CdTe/CIS module efficiency on the current industrial production of CdTe modules, while for CIGS/CIS, we use an aspirational estimate for CIGS efficiency. We focus on four-terminal mechanically stacked structures, thus avoiding the need to achieve current matching between the two cells. The top cell in such a tandem must have a transparent back contact, which has not been successfully implemented to date. However, for the purpose of understanding the economic viability of both tandems, we assume that this can be implemented at a cost similar to that of sputtered indium tin oxide. The cost of both tandem module structures was found to be nearly identical on an equal-area basis and approximately $30/m 2 higher than the single-junction alternatives. Both tandem modules are about 4% (absolute) more efficient than a module by using the top-cell material alone. We find that these tandem modules might reduce total system cost by as much as 11% in applications having a high area-related balance-of-system cost, such as area-constrained residential systems; however, the relative advantage of tandems decreases in the cases where balance-of-system costs are lower, such as in commercial and utility scale systems.

14 SOLAR ENERGY↗
DOE OSTI2018

The role of oxygen doping on elemental intermixing at the PVD-CdS/Cu (InGa)Se 2 heterojunction

Elemental intermixing at the CdS/CuIn 1-x Ga x Se 2 (CIGS) heterojunction in thin-film photovoltaic devices plays a crucial role in carrier separation and thus device efficiency. Here, using scanning transmission electron microcopy in combination with energy dispersive X-ray mapping, we find that by controlling the oxygen in the sputtering gas during physical vapor deposition (PVD) of the CdS, we can tailor the degree of elemental intermixing. More oxygen suppresses Cu migration from the CIGS into the CdS, while facilitating Zn doping in the CdS from the ZnO transparent contact. Very high oxygen levels induce nanocrystallinity in the CdS, while moderate or no oxygen content can promote complete CdS epitaxy on the CIGS grains. Regions of cubic Cu 2 S phase were observed in the Cu-rich CdCuS when no oxygen is included in the CdS deposition process. In the process-of-record sample (moderate O 2 ) that exhibits the highest solar conversion efficiency, we observe a ~26-nm-thick Cu-deficient CIGS surface counter-doped with the highest Cd concentration among all of the samples. Cd movement into the CIGS was found to be less than 10 nm deep for samples with either high or zero O 2 . Lastly, the results are consistent with the expectation that Cd doping of the CIGS surface and lack of Zn diffusion into the buffer both enhance device performance.

14 SOLAR ENERGY↗
DOE OSTI2021

Sub-Microsecond Polarization Switching in (Al,Sc)N Ferroelectric Capacitors Grown on Complementary Metal-Oxide-Semiconductor-Compatible Aluminum Electrodes

In this work, the frequency-dependent ferroelectric properties of 45 nm (Al,Sc)N films sputter deposited on complementary metal–oxide–semiconductor (CMOS)-compatible Al metal electrodes are measured and compared. Low in-plane compressive stress (-10 ± 20 MPa) is observed in (Al,Sc)N thin films deposited on Al electrodes. The (Al,Sc)N films exhibit an imprint in the measured coercive fields (E c ) of -4.3/+5.3 MV cm -1 at 10 kHz. Using positive-up negative-down (PUND) measurements, ferroelectric switching is observed within ≈200 ns of an applied voltage pulse, which demonstrates the ability of ferroelectric (Al,Sc)N to achieve the fast read/write speeds desired in memory devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Investigation of Interlayer Dielectric in BaTiO 3 /III–Nitride Transistors

In this paper, the impact of varying the thickness of the Al 2 O 3 interlayer dielectric on the electrical characteristics of BaTiO 3 /III-nitride transistors is investigated. In the findings, it is revealed that a minimum thickness of 8 nm for the Al 2 O 3 layer is crucial to maintain high device performance and protect against sputtering-induced damage during BaTiO 3 deposition. The fabricated BaTiO 3 /Al 2 O 3 /AlGaN/GaN high electron mobility transistors exhibit exceptional electrical properties, including a maximum current density of 700 mA mm –1 , an on-resistance of 5 Ω mm, an I ON /I OFF ratio of 10 7 , a subthreshold slope of 119 mV dec –1 , and significantly reduced gate leakage current. The devices with the optimal 8 nm Al 2 O 3 thickness demonstrates excellent agreement between theoretical and experimental values for effective mobility, achieving a value of 1188 cm 2 V –1 ·s at a 2D electron gas density of 10 13 cm –2 . Furthermore, in the study, it is confirmed that increasing the Al 2 O 3 thickness also improves the quality of interface charge density, as evidenced by the results obtained from capacitance–voltage measurements. In these findings, the critical role of controlling the Al 2 O 3 thickness in optimizing the electrical characteristics and overall performance of BaTiO 3 /III-nitride transistors are highlighted.

42 ENGINEERING↗
DOE OSTI2026

Materials Studies of Niobium Thin Films for Quantum Circuit Applications: Progress and Challenges

Niobium (Nb) films have emerged as a crucial material in the development of superconducting qubits, which are key components in quantum computing technology. Here, this review provides a comprehensive examination of Nb films from a materials perspective, focusing on their intrinsic properties, fabrication methods/techniques, and their influence on qubit performance, particularly through surface and interface driven loss mechanisms. We discuss the key material properties that are essential for qubit operation. Various deposition techniques for Nb thin films, such as sputtering, evaporation, molecular beam epitaxy, and atomic layer deposition, are explored, alongside their impact on film quality, uniformity, and qubit performance. Additionally, the influence of surface roughness, thin-film thickness, and substrate materials on quantum coherence is analyzed. Challenges such as defects and material degradation in Nb films are reviewed, along with strategies to mitigate these issues. Finally, we present the latest advancements and future directions in Nb film research, including potential improvements to enhance qubit coherence and scalability for large-scale quantum computing systems. Ultimately, a deeper understanding of surface and interface phenomena is essential for pushing the limits of qubit performance and realizing next-generation quantum technologies.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Depth profiling and standardization from the back side of a sample for accurate analyses: Emphasis on quantifying low‐fluence, shallow implants in diamond‐like carbon

Rationale Back‐side thinning of wafers is used to eliminate issues with transient sputtering when analyzing near‐surface element distributions. Precise and accurate calibrated implants are created by including a standard reference material during the implantation. Combining these methods allows accurate analysis of low‐fluence, shallow features even if matrix effects are a concern. Methods Implanted Na (<2.0 × 10 11 ions/cm 2 , peaking <50 nm) in diamond‐like carbon (DLC) film on silicon (solar wind returned by NASA's Genesis mission) was prepared for measurement as follows. Implanted surfaces of samples were epoxied to wafers and back‐side‐thinned using physical or chemical methods. Thinned samples were then implanted with reference ions for accurate quantification of the solar wind implant. Analyses used a CAMECA IMS 7f‐GEO SIMS in depth‐profiling mode. Results Back‐side‐implanted reference ions reduced the need to change sample mounts or stage position and could be spatially separated from the solar wind implant even when measuring monoisotopic ions. Matrix effects in DLC were mitigated and the need to find an identical piece of DLC for a reference implant was eliminated. Accuracy was only limited by the back‐side technique itself. Conclusions Combining back‐side depth profiling with back‐side‐implanted internal standards aides quantification of shallow mono‐ and polyisotopic implants. This technique helps mitigate matrix effects and keeps measurement conditions consistent. Depth profile acquisition times are longer, but if sample matrices are homogeneous, procedural changes can decrease measurement times.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Quantitative XPS of plutonium: Evaluation of the Pu4f peak shape, relative sensitivity factors and estimated detection limits

We report that high-resolution X-ray photoelectron spectra have been acquired from sputter cleaned and in situ oxidized samples of α-plutonium and a face-centred cubic δ-plutonium–gallium alloy. The differences in the Pu4f peak shape in these two materials have been investigated, and the poorly screened satellite peaks have been quantified. Curve fitting parameters for the Pu4p 3/2 , Pu4d 5/2 , Pu4f and Pu6p 3/2 photoelectron peaks are reported, and relative sensitivity factors have been determined. The Pu4f curve fit model has been applied to data acquired using different spectrometers and alloys. Examples of quantification of the plutonium spectra are provided and minimum detection limits are calculated for common impurities in plutonium metal.

36 MATERIALS SCIENCE↗
DOE OSTI2023

High‐Throughput Study of Amorphous Stability and Optical Properties of Superlattice‐Like Ge–Sb–Te Thin Films

A high‐throughput ion beam sputtering system is used to synthesize compositional gradient superlattice‐like (SLL) thin film libraries of Ge–Sb–Te alloys over the entire phase diagram. Here, the optical properties and structural evolution of the Ge–Sb–Te combinatorial SLL thin film are investigated. A systematic screening over the annealing temperature, annealing time, and modulation period has elucidated the critical factors that affect the stability of the metastable phase and optical properties. It is found that amorphous stability and optical constant are highly dependent on the modulation period and chemical composition of the thin film. This data‐driven approach offers new perspectives for accelerating the development of new materials with excellent optical and amorphous stability and for exploring their mechanisms, by greatly expanding the dataset of Ge–Sb–Te alloys with SLL structures through high‐throughput experiments.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Open‐Air Combustion Synthesis with Rapid Plasma Processing of Large‐Area Transparent Conducting Oxides

A vacuum-free, high-throughput synthesis of indium tin oxide (ITO) via Combustion Oxidation with Rapid Plasma Processing (CORP) utilizes a solution-based exothermic combustion reaction to generate the oxide with tunable control of either amorphous or crystalline phases. A subsequent open-air, forming gas plasma treatment is used to introduce oxygen vacancies and promote crystallization. Here, the evolution of the oxide structure is elucidated by extended X-ray absorption spectroscopy fine structure analysis. Using CORP, fabrication of 300 cm 2 of ITO possessing a champion sheet resistance of 38 Ω sq. −1 , visible transmission of 89%, conductivity stability for over 250 days, roughness < 2nm, and Haacke figure of merit (%T 550nm 10 /R s ) of 0.012 Ω −1 is achieved. Cost modeling of CORP demonstrates up to a 67% reduction in price for TCOs using fully continuous, in-line unit operations compared with vacuum sputtering. The work shows a path toward a low-cost, vacuum-free manufacturing method for TCOs at commercial scales.

42 ENGINEERING↗
DOE OSTI2017

Tungsten Diselenide Patterning and Nanoribbon Formation by Gas‐Assisted Focused‐Helium‐Ion‐Beam‐Induced Etching

A gas‐assisted focused‐helium‐ion beam‐induced etching (FIBIE) process is introduced, which accelerates direct‐write patterning of WSe 2 relative to standard ion milling. The etching process utilizes the XeF 2 precursor molecule to provide a chemical assist for enhanced material removal relative to ion sputtering. The FIBIE process enables high‐fidelity patterning of WSe 2 with doses 5× lower than standard He + milling. This enables the formation of high‐resolution WSe 2 nanoribbons with dimensions less than 10 nm. The WSe 2 nanoribbons demonstrate high Raman anisotropy and nanoribbon electrical measurements are reported for the first time. The normalized on‐currents of field‐effect transistors reveal that the electron and hole currents are both suppressed and scale with the nanoribbon width, with the electron transport experiencing more degradation. However, on‐currents of nanoribbons created by the FIBIE process remain orders of magnitude greater than nanoribbons formed by standard He + milling. Scanning transmission electron microscopy and complementary Monte Carlo ion–solid simulations reveal that the reduced currents are partially due to ion‐induced damage in the WSe 2 .

Stanford, Michael G.↗
DOE OSTI2025

Dielectric Engineering of ZnO@ZIF‐8 for High‐Performance Triboelectric Nanogenerators and Self‐Powered Humidity Sensors

Porous metal oxide–metal-organic framework (MO x @MOF) hybrids offer synergistic effects that enhance surface charge density, electronic structure, and textural properties, making them ideal for self-powered sensing applications. Here, uniform, and pinhole-free ternary porous ZnO–PTFE@ZIF-8 hybrid films are developed on room-temperature co-sputtered ZnO–polytetrafluoroethylene (PTFE) composite films, where ZnO serves as a self-sacrificial precursor to precisely regulate ZIF-8 (Zn-MeIm 2 ) growth through solvothermal methods. The resulting TENG achieves a high output power density of 0.67 mW cm −2 , attributed to the synergistic effects of fluorine-rich PTFE and methyl-functionalized ZIF-8, which enhance surface charge density and dielectric response. By tuning PTFE content in the ZnO–PTFE composite, the dielectric constant and triboelectric output is optimized. The ZP60@ZIF-8-based device also demonstrates excellent humidity sensing performance, with a wide detection range (20–99% RH) and ultrahigh sensitivity (R V % of 19 900%, R I % of 19 325% at 99% RH). These results position ZP@ZIF-8-based TENGs as promising platforms for next-generation self-powered sensors and smart wearable electronics.

42 ENGINEERING↗
DOE OSTI2021

CdTe‐Based Solar Cells with Variations in Mg Concentration in the MgZnO Emitter

The optimal fraction of Mg incorporation in sputter-deposited Mg X Zn 1−X O (MZO) emitters for thin-film CdTe-based solar cells is evaluated by varying it over a range of x from 0 to 0.35. This range allows a variation in the conduction band offset from −0.1 eV (cliff like) to +0.32 eV (spike like). Here, a maximum efficiency of 18.5% for cells with the bilayer CdSeTe/CdTe absorber occurs at x = 0.15, which corresponds to a spike-like band offset near 0.2 eV, as confirmed by X-ray photoelectron spectroscopy. In addition, good cell performance is seen over a fairly broad range of x extending from 0.1 to 0.25. The MZO optical bandgap increases with the Mg fraction, consistent with an increasing conduction band offset. Temperature-dependent current−voltage measurements and time-resolved photoluminescence show improvement in the emitter/absorber interface with the incorporation of Mg. Capacitance−voltage measurements show that the depletion region extends further into the absorber with more Mg, and X-ray diffraction confirms a change from a hexagonal-dominant crystal structure toward zinc blende at x = 0.35.

14 SOLAR ENERGY↗
DOE OSTI2023

Underlying Substrate Effect on Electrochemical Activity for Hydrogen Evolution Reaction with Low‐Platinum‐Loaded Catalysts

Platinum is known as the best catalyst for the hydrogen evolution reaction (HER) but the scarcity and high cost of Pt limit its widespread applicability. Herein, the role of the underlying substrate on the HER activity of dispersed Pt atoms is uncovered. A direct current magnetron sputtering technique is utilized to deposit transition metal (TM) thin films of W, Ti, and Ta as underlying substrates for extremely low loading of Pt (<1.5 at%). The electrocatalytic performance of as‐synthesized samples for the HER is examined in both alkali and acidic media. The results show that despite the low loading of Pt, the Pt/TM catalysts produce hydrogen at a rate comparable to that of pristine bulk Pt. Pt/TM catalysts also display good stability with less than 5% decay in performance after 10 h of continuous HER operation. Based on the computational study, the excellent performance is attributed to the modified electronic properties of the Pt atoms, offering ideal binding energy for HER due to interaction with the underlying substrates. This work provides a robust and industry‐friendly route toward designing efficient catalytic systems for important electrochemical reactions such as HER and others.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Understanding heterogeneity in Genesis diamond-like carbon film using SIMS analysis of implants

An amorphous diamond-like carbon film deposited on silicon made at Sandia National Laboratory by pulsed laser deposition was one of several solar wind (SW) collectors used by the Genesis Mission (NASA Discovery Class Mission #5). The film was ~1 μm thick, amorphous, anhydrous, and had a high ratio of sp 3 –sp 2 bonds (>50%). For 27 months of exposure to space at the first We passively irradiated lagrange point, the collectors, with SW (H fluence ~2 × 10 16 ions cm -2 ; He fluence ~8 × 10 14 ions cm -2 ). The radiation damage caused by the implanted H ions peaked at 12–14 nm below the surface of the film and that of He about 20–23 nm. To enable quantitative measurement of the SW fluences by secondary ion mass spectroscopy, minor isotopes of Mg ( 25 Mg and 26 Mg) were commercially implanted into flight-spare collectors at 75 keV and a fluence of 1 × 10 14 ions cm -2 . Furthermore, the shapes of analytical depth profiles, the rate at which the profiles were sputtered by a given beam current, and the intensity of ion yields are used to characterize the structure of the material in small areas (~200 × 200 ± 50 μm). Data were consistent with the hypothesis that minor structural changes in the film were induced by SW exposure.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Failure stress comparison of different pairings of Ag-plating and reflow-oven-processed pressureless-sintered-Ag interconnects

Here, sintered-silver is a candidate material to supplant solders for interconnects in power electronic packaging for many reasons including its desirably high electrical and thermal conductivities and compliance to Restriction of Hazardous Substances (RoHS) guidelines. The shear failure stress of interconnects though is limited by whatever constituent is the weakest, and that includes any employed plating. In the present study, silver-platings were processed electrolytically, electrolessly, and through sputter deposition and their influence on the entire “interconnect system” shear strength was examined. Test sets employing gold plating and no plating were included for comparison and to aid interpretation. Ambient-air, reflow-oven-processed, pressureless-sintered-silver interconnects were identically fabricated with all plating test sets. It was found that all considered silver-plating methods produced consistently strong (characteristic failure stresses > 55 MPa) sintered-silver interconnects. Because failures tended to be adhesive in all six sets, differences in failure stress among the silver-plated sets and the gold-plated or unplated sets were likely due to differences in the adhesive strength of the sintered silver with silver-plating, gold-plating, or direct bonding with copper.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Synthesis and Characterization of MoNb Films Superconducting at 100-200 mK

We have developed a new transition-edge sensor material with critical temperature (T-c) in the range 100-200 mK. The new material is a solid solution of two superconducting components, MoxNb1-x, co-sputtered from two high-purity single-component targets (Mo and Nb). The T-c has a minimum (dT(c)/dx = 0) at an intermediate concentration of the components. We have optimized the deposition parameters and composition to provide films with a sharp superconducting transition at ~ 150 mK. We investigated structural features of the films and surface morphology using X-ray diffraction (XRD) and scanning electron microscopy. The XRD measurements indicate that the grown films are polycrystalline, with a preferred orientation along the (110) crystal direction and a clear correlation between superconducting properties and film microstructure.

superconducting alloys↗