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At least 1,495 records · Page 83

Remarkable modulation effects of Ag{sup +} ion on fluorescence of Eu{sup 3+} ion doped yttrium phosphate nanophosphors

Highlights: ► Ag{sup +} sensitized YPO{sub 4}:Eu{sup 3+} was synthesized. ► Emission band centered at 612 nm was broadened to 14 nm. ► Ag{sup +} plays a main role for the broadening of emission band of Eu{sup 3+}. ► Emission mechanisms were discussed. - Abstract: Ag{sup +} sensitized YPO{sub 4}:Eu{sup 3+} nanomaterials were successfully synthesized by hydrothermal reaction. The fluorescent spectra indicate that Ag{sup +} ion has remarkable modulation effects on the shape of the emission bands of YPO{sub 4}:Eu{sup 3+}, so that full width at half maximum (FWHM) of the {sup 5}D{sub 0} → {sup 7}F{sub 2} emission of YPO{sub 4}:Eu{sup 3+} is extended to be 14 nm, broader than that (<9 nm) of ever reported Eu{sup 3+}-doped materials. Meanwhile, it is observed that the doping of Ag+ ion leads to the lowering of the intensity ratio of {sup 5}D{sub 0} → {sup 7}F{sub 2} to {sup 5}D{sub 0} → {sup 7}F{sub 1} transition. The analysis demonstrates that doping of Ag{sup +} ion will generate the local lattice aberration and the crystal field variation of Eu{sup 3+} ion and Y{sup 3+} ions due to a fact that the ionic radius (1.31 Å) of Ag{sup +} is obviously larger than that (0.938 Å) of Eu{sup 3+} and that (0.90 Å) of Y{sup 3+}. As a result, the excitation and emission bands of Eu{sup 3+} ion are correspondingly tuned.

36 MATERIALS SCIENCE↗

Engineering Na‐Rich P2‐Type Layered Oxides Through Li/Ti Dual Doping for Oxygen Redox Activation and Superior Structural Stability

Sodium layered oxides Na x MO 2 (x ≤ 1 and M = transition metal ions) have gained significant interest as sodium-ion battery (NIB) cathodes owing to their high operating voltages and potential for higher energy density compared with polyanion and Prussian blue–type cathodes. However, their practical applications are often hindered by the irreversible structural transitions leading to capacity fading during cycling. The nature and substitution of transition metal ions define the material properties and electrochemical performance. In this study, through comprehensive electrochemical characterization combined with multi-scale structural and spectroscopical analyses, we demonstrate the synergistic impacts of Lithium and Titanium doping, which not only increases overall capacity by boosting cation and anion cooperative redox contributions but also improves the rate capability and cycling stability. Specifically, Li + doping enhances the available sodium inventory for extraction, while Ti 4+ disrupts Na + /vacancy ordering at lower voltages (< 4 V) and mitigates the detrimental P2→OP4/O2 phase transition during cycling. The combined effect of Lithium and Titanium doping promotes more charge localization on Oxygen, which activates reversible lattice oxygen redox reactions at elevated voltages, contributing additional capacity beyond conventional cationic redox. This work provides crucial insights into the design of high-performance, high-capacity P2-type layered cathode materials for sodium-ion batteries.

36 MATERIALS SCIENCE↗

Single crystal growth and electronic structure of Rh-doped Sr 3 Ir 2 O 7

Ruddlesden-Popper iridate Sr 3 Ir 2 O 7 is a spin–orbit coupled Mott insulator. Hole doped Sr 3 Ir 2 O 7 provides an ideal platform to study the exotic quantum phenomena that occur near the metal–insulator transition (MIT) region. Rh substitution of Ir is an effective method to induce hole doping into Sr 3 Ir 2 O 7 . However, the highest doping level reported in Sr 3 (Ir 1− x Rh x ) 2 O 7 single crystals was only around 3%, which is far from the MIT region. In this paper, we report the successful growth of single crystals of Sr 3 (Ir 1− x Rh x ) 2 O 7 with a doping level of ~ 9%. The samples have been fully characterized, demonstrating the high quality of the single crystals. Transport measurements have been carried out, confirming the tendency of MIT in these samples. The electronic structure has also been examined by angle-resolved photoemission spectroscopy (ARPES) measurements. Our results establish a platform to investigate the heavily hole doped Sr 3 Ir 2 O 7 compound, which also provide new insights into the MIT with hole doping in this material system.

Physics↗

Optical suppression of defect-related photoluminescence in GeSn

Reports of photoluminescence from GeSn grown on Ge substrates by molecular beam epitaxy have been limited. We find that one limiting factor to observing photoluminescence is due to localized defect states marked by photoluminescence at 2400 nm and originating from the Ge substrate and buffer layer. In this study, we report on an optical study utilizing doped Ge(001) substrates to effectively suppress defect-related photoluminescence in GeSn layers by filling localized defect trap states. For this experiment, a GeSn layer with Sn content up to 10.5 ± 0.5% was grown on a doped Ge(001) substrate. Analysis of the physics of the photoluminescence spectrum collected from the GeSn thin film shows an emission at the expected wavelength of 2300 nm for 10.5 ± 0.5% Sn content and the absence of the typically observed defect-related signal at 2400 nm. This understanding is further confirmed using short-pulse optical excitation of the GeSn grown on undoped Ge substrates.

Chemical vapor deposition↗

Raman spectra and electron-phonon coupling in disordered graphene with gate-tunable doping

We report a Raman spectroscopy study of graphene field-effect transistors with a controlled amount of defects introduced in graphene by exposure to electron-beam irradiation. Raman spectra are taken at T = 8 K over a range of back gate voltages (V{sub g}) for various irradiation dosages (R{sub e}). We study effects in the Raman spectra due to V{sub g}-induced doping and artificially created disorder at various R{sub e}. With moderate disorder (irradiation), the Raman G peak with respect to the graphene carrier density (n{sub FE}) exhibits a minimum in peak frequency and a maximum in peak width near the charge-neutral point (CNP). These trends are similar to those seen in previous works on pristine graphene and have been attributed to a reduction of electron-phonon coupling strength (D) and removal of the Kohn anomaly as the Fermi level moves away from the CNP. We also observe a maximum in I{sub 2D}/I{sub G} and weak maximum in I{sub D}/I{sub G} near the CNP. All the observed dependences of Raman parameters on n{sub FE} weaken at stronger disorder (higher R{sub e}), implying that disorder causes a reduction of D as well. Our findings are valuable for understanding Raman spectra and electron-phonon physics in doped and disordered graphene.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Many-body Green's function approaches to the doped Fröhlich solid: Exact solutions and anomalous mass enhancement

In polar semiconductors and insulators, the Fröhlich interaction between electrons and long-wavelength longitudinal optical phonons induces a many-body renormalization of the carrier effective masses and the appearance of characteristic phonon sidebands in the spectral function, commonly dubbed “polaron satellites.” The simplest model that captures these effects is the Fröhlich model, whereby electrons in a parabolic band interact with a dispersionless longitudinal optical phonon. The Fröhlich model has been employed in a number of seminal papers, from early perturbation-theory approaches to modern diagrammatic Monte Carlo calculations. One limitation of this model is that it focuses on undoped systems, thus ignoring carrier screening and Pauli blocking effects that are present in real experiments on doped samples. Here, to overcome this limitation, we extend the Fröhlich model to the case of doped systems, and we provide exact solutions for the electron spectral function, mass enhancement, and polaron satellites. We perform the analysis using two approaches, namely, Dyson’s equation with the Fan-Migdal self-energy, and the second-order cumulant expansion. We find that these two approaches provide qualitatively different results. In particular, Dyson’s approach yields better quasiparticle masses and worse satellites, while the cumulant approach provides better satellite structures, at the price of worse quasiparticle masses. Both approaches yield an anomalous enhancement of the electron effective mass at finite doping levels, which in turn leads to a breakdown of the quasiparticle picture in a significant portion of the phase diagram.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetic quantum phase transition in Cr-doped Bi 2 (Se x Te 1-x ) 3 driven by the Stark effect

The interplay between magnetism and topology, as exemplified in the magnetic skyrmion systems, has emerged as a rich playground for finding novel quantum phenomena and applications in future information technology. Magnetic topological insulators (TI) have attracted much recent attention, especially after the experimental realization of quantum anomalous Hall effect. Future applications of magnetic TI hinge on the accurate manipulation of magnetism and topology by external perturbations, preferably with a gate electric field. In this work, we investigate the magneto transport properties of Cr doped Bi 2 (Se x Te 1-x ) 3 TI across the topological quantum critical point (QCP). We find that the external gate voltage has negligible effect on the magnetic order for samples far away from the topological QCP. However, for the sample near the QCP, we observe a ferromagnetic (FM) to paramagnetic (PM) phase transition driven by the gate electric field. Theoretical calculations show that a perpendicular electric field causes a shift of electronic energy levels due to the Stark effect, which induces a topological quantum phase transition and consequently a magnetic phase transition. Finally, the in situ electrical control of the topological and magnetic properties of TI shed important new lights on future topological electronic or spintronic device applications.

36 MATERIALS SCIENCE↗

Electrospun ZnO Nanoparticles Doped Core–Sheath Nanofibers: Characterization and Antimicrobial Properties

Coaxial electrospinning technique was used to fabricate the core–sheath composite nanofibers of ZnO nanoparticle (Nps) (10%, 20% w/w) doped polymethyl methacrylate (PMMA) (as sheath) and polyvinyl alcohol (PVA) (as core). Fourier transform infrared (FT-IR) spectra were confirmed the weak forces arise between ZnO Nps, PMMA and PVA matrixes. The hexagonal (wurtzite) structure of ZnO Nps with ~ 30.8 nm of diameter was confirmed from the X-ray diffraction pattern. The morphology and microstructure of core–sheath composite nanofibers were confirmed from the scanning electron microscopy (SEM) and transmission electron microscopy (TEM). It is clearly seen from the TEM images that the PMMA encapsulate the PVA core. Core–sheath composite nanofibers were assessed against Escherichia coli (E. coli) and Bacillus subtilis (B. subtilis) bacteria through quantitative, disk diffusion and viable cell count methods. It was found that ZnO Nps doped core–sheath nanofibers were effectively inhibit the growth of gram positive bacteria, B. subtilis.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

The photocatalytic performance of Ta and Rh co-doped TiO2 tuned by the average dopant valence

Highlights: • Effects of dopant valence on the photocatalytic performance was investigated. • New strategy was worked out to investigate effects of dopant valence. • The dopant valence was changed but the ionic radius keeps constant. • Average valence of Rh and Ta in Ti{sub 0.96}Ta{sub 0.04−x}Rh{sub x}O{sub 2} was changed multiply. • The optimal photocatalyst was obtained as the average valence approaches +4. - Abstract: In order to reveal the effects of dopant average valence on the photocatalytic performance, Ta and Rh co-doped Ti{sub 0.96}Ta{sub 0.04−x}Rh{sub x}O{sub 2} (x = 0, 0.008, 0.016, 0.02, 0.024, 0.032, and 0.04) samples were crystallized at 450 °C and 800 °C, respectively; then the 800 °C crystallized x = 0.02 sample was subsequently reduced in the H{sub 2}/N{sub 2} mixture gases at 600, 700, 800, and 900 °C. Under different processing conditions, Ta remains the valence of +5, while the valence of Rh varies. Rh exhibits Rh{sup 3+} and Rh{sup 4+} in the 450 °C crystallized samples and is completely oxidized to Rh{sup 4+} in the 800 °C crystallized samples. In the reduced samples, Rh exists in the forms of Rh, Rh{sup 3+} and Rh{sup 4+}. The optimal photocatalyst is obtained as the ratio of Rh{sup 3+}/Rh{sup 4+} is 2.11 or the average valence of doped Ta and Rh is closest to the +4 valence of substituted Ti.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Divalent doping-induced thermoelectric power factor increase in p-type Bi 2 Te 3 via electronic structure tuning

We use first-principles calculations to reveal the effects of divalent Pb, Ca, and Sn doping of Bi 2 Te 3 on the band structure and transport properties, including the Seebeck coefficient, α, and the reduced power factor, α 2 σ/τ, where σ is the electrical conductivity and τ is the effective relaxation time. Pb and Ca additions exhibit up to 60%–75% higher peak α 2 σ/τ than that of intrinsic Bi 2 Te 3 with Bi antisite defects. Pb occupancy and Ca occupancy of Bi sites increase σ/τ by activating high-degeneracy low-effective-mass bands near the valence band edge, unlike Bi antisite occupancy of Te sites that eliminates near-edge valence states in intrinsic Bi 2 Te 3 . Neither Pb doping nor subatomic-percent Ca doping increases α significantly, due to band averaging. Higher Ca levels increase α and diminish σ, due to the emergence of a corrugated band structure underpinned by high-effective-mass bands, attributable to Ca–Te bond ionicity. Sn doping results in a distortion of the bands with a higher density of states that may be characterized as a resonant state but decreases α 2 σ by up to 30% due to increases in the charge carrier effective mass and decreases in both spin–orbit coupling and valence band quasidegeneracy. These results, and thermal conductivity calculations for nanostructured Bi 2 Te 3 , suggest that Pb or Ca doping can enhance the thermoelectric figure of merit ZT to values up to ZT ~ 1.7, based on an experimentally determined τ. Our findings suggest that divalent doping can be attractive for realizing large ZT enhancements in pnictogen chalcogenides.

36 MATERIALS SCIENCE↗

Scanning Kelvin Probe Microscopy: A Tool to Investigate Nano-Scale Doping Non-Uniformities in Poly-Si/SiOx Contacts: Preprint

Monocrystalline Si (c-Si) solar cells with passivated contacts based on the ultrathin SiOx and doped polycrystalline Si (poly-Si) layers in a poly-Si/SiOx/c Si structure show high solar cell efficiencies that are ~26%. Excellent surface passivation using these contacts is achieved via the combined effects of chemical passivation of the SiOx/c-Si interface by the SiOx layer and field-effect passivation from the heavily doped poly-Si layer. These contacts give best performance only when annealed to temperatures higher than 850 degrees C. Structural changes in the SiOx layer and dopant diffusion from poly-Si into the underlying c-Si wafer occur during this step which are hard to investigate using conventional characterization techniques. In this work we investigate poly-Si/SiOx contacts with both a 1.5 (tunneling transport) and 2.2 (pinhole transport) nm SiOx layer using atomic force microscopy techniques. Conductive AFM on n+-poly-Si/SiOx/p-Si structures show significant spatial variations for both contact types, likely due to non-uniformities in the poly-Si layer itself. The electrical and structural variations deeper into the contact were revealed by scanning Kelvin probe microscopy after precisely etching away the poly-Si and SiOx layers and few nanometers of c-Si surface. This etching was performed using tetramethylammonium hydroxide and dilute HF solutions. The resulting surface potential maps appear similar for both contacts, and show less than 500 nm size heavily-doped regions. However, further etching of the c-Si surface reveals these heavily-doped regions to be less than 200 nm deep for the 2.2 nm SiOx contact and greater than 200 nm deep for the 1.5 nm SiOx contact.

14 SOLAR ENERGY↗

Electron-phonon coupling modification and carrier mobility enhancement in poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) films by ultraviolet irradiation

The effect of ultraviolet irradiation on the electrical property of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) films was examined. It is shown that the carrier mobility increases while the carrier density does not change substantially. The carrier mobility in PEDOT:PSS samples exhibits strong temperature dependence, indicating the dominance of tunneling (hopping) at low (high) temperatures. The results demonstrate that changes in the chemical structure may lead to the modification of the electron-phonon coupling, thus increasing the carrier mobility in PEDOT:PSS.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Two-dimensional superconductor-insulator quantum phase transitions in an electron-doped cuprate

Here, we use an ionic liquid-assisted electric-field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic-field (B)-induced SIT in the liquid-gated superconducting film. Finite-size scaling analysis indicates that SITs induced both by electric and by magnetic fields are quantum phase transitions and the transitions are governed by percolation effects-quantum mechanical in the former and classical in the latter cases. Compared to the hole-doped cuprates, the SITs in the electron-doped system occur at critical sheet resistances (R c ) much lower than the pair quantum resistance R Q = h/(2e) 2 = 6.45 kΩ, suggesting the possible existence of fermionic excitations at finite temperatures at the insulating phase near the SITs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Structural, magnetic, and transport properties of Fe-doped CoTiSb epitaxial thin films

Epitaxial intrinsic and Fe-doped CoTiSb thin films with C1{sub b} structure were grown on MgO(100) substrates by magnetron sputtering. The semiconducting-like behavior in both intrinsic and Fe-doped thin films was demonstrated by temperature dependence of longitudinal resistivity. The Fe-doped CoTiSb films with a wide range of doping concentrations can maintain semiconducting-like and magnetic properties simultaneously, while the semiconducting behavior is weakening with the increasing Fe concentration. For 21 at. % Fe-doped film, low lattice magnetic moment (around 0.65 μ{sub B}) and high resistivity (larger than 800 μΩ cm) are beneficial to its application as a magnetic electrode in spintronic devices. Anomalous Hall effect of 21 at. % Fe-doped film was also investigated and its behaviors can be treated well by recent-reported anomalous Hall scaling including the contribution of spin-phonon skew scattering.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Rare Earth and Transition Metal Containing Glasses

Transition metal (TM) and rare earth (RE) ions have been incorporated into many glass systems such as silicate, phosphate, and borosilicate-based oxide glasses, as well as in halide and chalcogenide glasses, that find applications ranging from optical, photonic, and magnetic devices, solid-state battery, to nuclear waste disposal. Understanding the structural role of RE and TM in these glasses can help to develop glass compositions for targeted applications with either high-optical emission efficiency, electrical conductivity, or chemical durability. In this chapter, we first provide a general introduction of the applications and structural features of RE and TM in glasses, then the critical aspects of molecular dynamics (MD) simulations of these glasses such as interatomic potentials, structural analysis tools to study RE and TM ions in glasses and their clustering behaviors, Quantitative Structure–Property Analysis (QSPR), diffusion and dynamic property calculations, and electronic structure calculations to understand electronic defects such as charge trapping and radiation effects are introduced. Three representative case studies are presented: the first one is on MD simulations of erbium- and europium-doped silica and silicate glasses, as well as cerium doped aluminophosphate glasses, that revealed the effect of glass composition on RE ion local structure and clustering behavior. Electronic structure calculations of cerium-doped glass show how the existence of multioxidation states help to mediate radiation-induced damages caused by excited electron–hole pairs was also discussed. The second one focuses on alkali vanadophosphate glasses where the existence of two vanadium oxidation states help to provide electronic conduction in the glasses while alkali ions provide ionic conduction. MD simulations were used to understand vanadium environments and other structural aspects in the phosphate glasses, as well as the ionic transport behaviors of alkali ions. The third case study is on zirconium-containing borosilicate and aluminosilicate glasses that find wide applications in nuclear waste disposal. MD simulations help to provide structural details of zirconium ions that are validated by diffraction and EXAFS spectra. The structural information was used to interpret changes of mechanical properties and chemical durability by using QSPR and other analyses-based MD-generated structure models.

Du, Jincheng↗

Li doped kagome spin liquid compounds

We elucidate the unexpected insulating features of Li-doped QSL compounds by proposing a charge localization effect due to chemical bonding.

Chemistry↗

Surface Charge and Electrostatic Spin Crossover Effects in CoN 4 Electrocatalysts

Carbon materials doped with nitrogen and 3d transition metals have attracted a great deal of interest for catalyzing electrochemical reactions such as water splitting, oxygen reduction, and carbon dioxide reduction. Here, we employed density functional theory to study Co–N-doped carbon as electrocatalysts for the oxygen reduction and oxygen evolution reactions. Specifically, we investigated the interplay among adsorption energies, the spin state of the CoN 4 active center, and the applied potential. We found that adsorption energies strongly depend on both the applied potential and the spin state of the Co center. Furthermore, spin state transitions induced by the applied potential also play an important role in determining the adsorption energies. Here, this effect originates from a different potential of zero charge and capacitance of each spin state.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Effects of Oxygen Vacancy on the Magnetic Properties of Ni-Doped SnO{sub 2} Nanoparticles

We studied the ferromagnetism of Ni-doped SnO{sub 2} with and without oxygen vacancy (V{sub O}) by experiments and calculations. Sn{sub 0.96}Ni{sub 0.04}O{sub 2} nanocrystalline powder prepared by the sol-gel method exhibits room-temperature ferromagnetism, and the vacuum annealing reduces its saturation magnetizations. The density functional theory (DFT) calculations show that the doped Ni atom can introduce a local magnetic moment of about 2.0 μ{sub B} in SnO{sub 2} (110) surface, which is ascribed to the spin-polarization of Ni 3d and O 2p electrons. The type of preferential magnetic coupling of Ni-doped SnO{sub 2} (110) surface depends upon the distributions of Ni dopants, and ferromagnetic coupling is more favorable in most cases. Introduction of V{sub O} obviously weakens the ferromagnetic interaction of Ni-doped SnO{sub 2} (110) surface, which can give a reasonable explanation for our experimental observations.

77 NANOSCIENCE AND NANOTECHNOLOGY↗