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At least 1,513 records · Page 84

Determination of Interfacial Mixing in Tapered Block Polymer Thin Films: Experimental and Theoretical Investigations

Tapered block polymers are an emerging class of macromolecules with unique and diverse self-assembly behavior and properties. Here, we directly examine the manipulation of self-assembled interfaces in poly(isoprene- b -styrene) (I-S)-based block polymers (BPs) by synthesizing non-tapered (I-S), normal tapered (I-IS-S), and inverse tapered (I-SI-S) BPs with controlled monomer segment distributions. We provide the first direct measurements of interfacial mixing for these tapered polymers through X-ray reflectivity (XRR). The density profiles from XRR are compared to results from fluids density functional theory (fDFT) with good agreement. We find that our normal tapered BPs (30 vol % tapering) have similar interfacial mixing to diblock polymers, while our inverse tapered BPs (30 vol % tapering) have much wider interfaces. Additionally, differential scanning calorimetry (DSC) studies elucidate the influence of tapering on the glass transition temperature (T g ) and change of heat capacity (ΔC P ) for each BP phase, and quantitative analysis from ΔC P also indicates enhanced mixing in the inverse tapered I-SI-S BPs. Finally, we investigate the free surface morphologies of these tapered polymers in thin film geometries. The inverse tapered BP form larger island/hole structures likely due to decreased surface elasticity from mixing as a result of the modified interblock interfacial characteristics. These results demonstrate that BPs with similar molecular weights and compositions can exhibit different thermodynamic properties and free surface morphologies in thin film geometries, as influenced by monomer sequence.

36 MATERIALS SCIENCE↗

Controlling the conduction band offset for highly efficient ZnO nanorods based perovskite solar cell

The mechanism of charge recombination at the interface of n-type electron transport layer (n-ETL) and perovskite absorber on the carrier properties in the perovskite solar cell is theoretically studied. By solving the one dimensional diffusion equation with different boundary conditions, it reveals that the interface charge recombination in the perovskite solar cell can be suppressed by adjusting the conduction band offset (ΔE{sub C}) at ZnO ETL/perovskite absorber interface, thus leading to improvements in cell performance. Furthermore, Mg doped ZnO nanorods ETL has been designed to control the energy band levels. By optimizing the doping amount of Mg, the conduction band minimum of the Mg doped ZnO ETL has been raised up by 0.29 eV and a positive ΔE{sub C} of about 0.1 eV is obtained. The photovoltage of the cell is thus significantly increased due to the relatively low charge recombination.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Prediction of hydration energies of adsorbates at Pt(111) and liquid water interfaces using machine learning

Aqueous phase heterogeneous catalysis is important to various industrial processes, including biomass conversion, Fischer–Tropsch synthesis, and electrocatalysis. Accurate calculation of solvation thermodynamic properties is essential for modeling the performance of catalysts for these processes. Explicit solvation methods employing multiscale modeling, e.g., involving density functional theory and molecular dynamics have emerged for this purpose. Although accurate, these methods are computationally intensive. This study introduces machine learning (ML) models to predict solvation thermodynamics for adsorbates on a Pt(111) surface, aiming to enhance computational efficiency without compromising accuracy. In particular, ML models are developed using a combination of molecular descriptors and fingerprints and trained on previously published water–adsorbate interaction energies, energies of solvation, and free energies of solvation of adsorbates bound to Pt(111). These models achieve root mean square error values of 0.09 eV for interaction energies, 0.04 eV for energies of solvation, and 0.06 eV for free energies of solvation, demonstrating accuracy within the standard error of multiscale modeling. Feature importance analysis reveals that hydrogen bonding, van der Waals interactions, and solvent density, together with the properties of the adsorbate, are critical factors influencing solvation thermodynamics. Furthermore, these findings suggest that ML models can provide rapid and reliable predictions of solvation properties. This approach not only reduces computational costs but also offers insights into the solvation characteristics of adsorbates at Pt(111)–water interfaces.

Adsorption↗

Ultrafast terahertz emission from emerging symmetry-broken materials

Abstract Nonlinear optical spectroscopies are powerful tools for investigating both static material properties and light-induced dynamics. Terahertz (THz) emission spectroscopy has emerged in the past several decades as a versatile method for directly tracking the ultrafast evolution of physical properties, quasiparticle distributions, and order parameters within bulk materials and nanoscale interfaces. Ultrafast optically-induced THz radiation is often analyzed mechanistically in terms of relative contributions from nonlinear polarization, magnetization, and various transient free charge currents. While this offers material-specific insights, more fundamental symmetry considerations enable the generalization of measured nonlinear tensors to much broader classes of systems. We thus frame the present discussion in terms of underlying broken symmetries, which enable THz emission by defining a system directionality in space and/or time, as well as more detailed point group symmetries that determine the nonlinear response tensors. Within this framework, we survey a selection of recent studies that utilize THz emission spectroscopy to uncover basic properties and complex behaviors of emerging materials, including strongly correlated, magnetic, multiferroic, and topological systems. We then turn to low-dimensional systems to explore the role of designer nanoscale structuring and corresponding symmetries that enable or enhance THz emission. This serves as a promising route for probing nanoscale physics and ultrafast light-matter interactions, as well as facilitating advances in integrated THz systems. Furthermore, the interplay between intrinsic and extrinsic material symmetries, in addition to hybrid structuring, may stimulate the discovery of exotic properties and phenomena beyond existing material paradigms.

36 MATERIALS SCIENCE↗

Determining interface structures in vertically aligned nanocomposite films

Vertically aligned nanocomposites (VANs) films have self-assembled pillar-matrix nanostructures. Owing to their large area-to-volume ratios, interfaces in VAN films are expected to play key roles in inducing functional properties, but our understanding is hindered by limited knowledge about their structures. Motivated by the lack of definitive explanation for the experimentally-found enhanced ionic conductivity in Sm-doped-Ce0 2 /SrTiO 3 VAN films, we determine the structure at vertical interfaces using random structure searching and explore how it can affect ionic conduction. Interatomic potentials are used to perform the initial searching, followed by firstprinciples calculations for refinement. Previously unknown structures are found, with lower energy than that of an optimized hand-built model. We find a strongly distorted oxygen sub-lattice which gives a complex landscape of vacancy energies. The cation lattice remains similar to the bulk phase, but has a localized strain field. The excess energy of the interface is similar to that of a high angle grain boundaries in SrTiO 3 . None of the observations supports ionic conductivity being enhanced locally at the interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Long‐Range Non‐Coulombic Coupling at the LaAlO 3 /SrTiO 3 Interface

The LaAlO 3 /SrTiO 3 interface hosts a plethora of gate‐tunable electronic phases. Gating of LaAlO 3 /SrTiO 3 interfaces is usually assumed to occur electrostatically. However, increasing evidence suggests that non‐local interactions can influence and, in some cases, dominate the coupling between applied gate voltages and electronic properties. Here, quasi‐1D ballistic electron waveguides are sketched at the LaAlO 3 /SrTiO 3 interface as a probe to understand how gate tunability varies as a function of spatial separation. Gate tunability measurements reveal the scaling law to be at odds with the pure electrostatic coupling observed in traditional semiconductor systems. The non‐Coulombic gating at the interface is attributed to a long‐range nanoelectromechanical coupling between the gate and electron waveguide, possibly mediated by the ferroelastic domains in SrTiO 3 . The long‐range interactions at the LaAlO 3 /SrTiO 3 interface add unexpected richness and complexity to this correlated electron system.

36 MATERIALS SCIENCE↗

A Mixed PC 61 BM‐CO i 8DFIC Based Electron Transport Material for Inverted High‐performance Perovskite Solar Cells

Abstract This study reports a blend of [6, 6]‐phenyl‐C61‐butyric acid methyl ester (PC 61 BM) and CO i 8DFIC non‐fullerene acceptor (NFA) as an electron transport layer (ETL) in perovskite solar cells (PSCs). This mixed small‐molecule ETL showed good inter‐molecule mixing, reduced intermolecular distances and decent morphology, resulting in excellent charge carrier transport properties. Morever, charge carrier extraction and transport at the perovskite/ETL interface was optimized by reducing surface traps and defects due to the passivation ability of various terminal groups from the CO i 8DFIC molecule. A high power conversion efficiency (PCE) of 19.12 % was achieved by taking advantage of benefits from both molecules, showing much better performance than the invidual PC 61 BM or CO i 8DFIC (7.13% for using the NFA only). Moreover, the storage and ambient stabilities of the mixed ETL‐based PSCs increased dramatically compared to control devices.

Chemistry↗

Crystal Phase Distribution and Ferroelectricity in Ultrathin HfO 2 –ZrO 2 Bilayers

(Hf,Zr)O 2 ultrathin films are used as ferroelectric layers in emerging digital logic and nonvolatile memory devices. The ferroelectric properties of (Hf,Zr)O 2 can be improved by interface engineering, such as the formation of nanolaminates with distinct HfO 2 and ZrO 2 layers. Herein, the ferroelectric performance of HfO 2 –ZrO 2 ultrathin bilayer devices is shown to depend on the stacking order of HfO 2 and ZrO 2 , which affects the quantity of the noncentrosymmetric orthorhombic Pca 2 1 crystal phase. By combining X‐ray diffraction with a novel extended X‐ray absorption fine structure (EXAFS) analysis procedure, the orthorhombic, tetragonal, and monoclinic phase fractions are quantified for bilayers composed of 3 nm HfO 2 and 3 nm ZrO 2 . A significantly larger orthorhombic ZrO 2 phase fraction is found when ZrO 2 has an unconstrained surface during annealing, whereas the presence of a ZrO 2 interface with the substrate results in a substantial tetragonal ZrO 2 phase fraction and a 2.4× smaller remanent polarization. HfO 2 is found to be less susceptible than ZrO 2 to crystal phase templating. The methods presented herein enable mechanistic studies of ferroelectric wake‐up, fatigue, and processing effects in (Hf,Zr)O 2 films, accelerating the development of electronic devices that rely on ferroelectric oxides.

McBriarty, Martin E.↗

Radiative Efficiency and Charge-Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures

CdTe-based photovoltaics is a rapidly developing energy technology with one of the lowest levelized costs of electricity. But nonradiative Shockley-Read-Hall (SRH) recombination limits the efficiency of CdTe solar cells. Partial mitigation of bulk and grain-boundary SRH recombination was achieved by alloying CdTe with Se, and CdSe x Te 1-x absorbers are used in high-efficiency solar cells. Recently, interface recombination was significantly reduced with alumina passivation, but other properties of Al 2 O 3 /CdSe x Te 1-x /Al 2 O 3 heterostructures have not yet been investigated. Herein, further progress in understanding and developing polycrystalline heterostructures with x = 0.2 is reported. It is shown that external photoluminescence quantum yield is increased to 0.2%, quasi-Fermi-level splitting to 950 mV, minority carrier lifetimes to 750 ns, and mobility to 100 cm 2 Vs -1 . Such polycrystalline CdSe x Te 1-x electronic characteristics match or exceed CdTe single-crystal properties. The resulting charge-carrier diffusion length of ≈14 $\mu$m is several times greater than the absorber thickness in test structures and in typical CdTe solar cells. Herein, with passivation and absorbers, polycrystalline CdSeTe solar cell open-circuit voltage is increased from the current 76% of the Shockley-Queisser limit to 82%, or close to 1 V is reported.

14 SOLAR ENERGY↗

Effect of CdTe Addition on the Electrical Properties and AC Susceptibility of YBa{sub 2}Cu{sub 3}O{sub 7−δ} Superconductor

The effect of CdTe addition on YBa{sub 2}Cu{sub 3}O{sub 7−δ}(CdTe){sub x} (x = 0–0.10) has been studied. XRD patterns showed the presence of impurities including CdTe for x ≥ 0.05 wt%. The resistance versus temperature curves showed metallic behavior for all samples. The onset temperature T{sub c onset} for all samples is between 90 and 92 K. The superconducting transition width, ΔT{sub c} = 4 K for all samples except for x = 0.1 wt% where ΔT{sub c} = 6 K. The superconducting transition determined by AC susceptibility measurement also showed little change in T{sub cχ{sup ′}} (between 89 and 92 K). However, the peak temperature T{sub p} of the imaginary part of the susceptibility χ″, showed a drastic decrease for samples with x > 0.05 wt%. This indicated that the superconducting grains were strongly decoupled for x > 0.05 wt% due to the impurities as observed in the XRD pattern. The intergrain critical current density, J{sub c} at T{sub p} for the x = 0 sample is J{sub c} (82 K) = 17 A cm{sup −2}. These results can be useful in the fabrication of semiconductor/YBCO superconductor hybrid systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Strain-modulated intercalated phases of Pb monolayer with dual periodicity in SiC(0001)-graphene interface

Intercalation of metal atoms at the SiC(0001)-graphene (Gr) interface can provide confined 2D metal layers with interesting electronic properties. The intercalated Pb monolayer (ML) has shown the coexistence of the Gr(10 x 10)-moiré and a stripe phase, which still lacks understanding. Using density functional theory calculation and thermal annealing with ab initio molecular dynamics as motivated by experiment, we have studied the formation energy of Gr/Pb/SiC(0001) for different Pb coverages. Near the coverage of a Pb(111)-like ML mimicking the (10 x 10)-moiré, we find a slightly more stable stripe structure, where one half of the structure has compressive strain with Pb occupying the Si-top sites and the other half has tensile strain with Pb off the Si-top sites. This stripe structure along the Gr zigzag direction has a periodicity of 2.3 nm across the [1$\overline{2}$10] direction agreeing with the previous observations using scanning tunneling microscopy. Analysis with electron density difference and density of states show the tensile region has a more metallic character than the compressive region, while both are dominated by charge transfer from Pb ML to SiC(0001). As a result, the small energy difference between the stripe and Pb(111)-like structures means the two phases are almost degenerate and can coexist, which explains the experimental observations.

36 MATERIALS SCIENCE↗

Analysis of structure-property gradients in orthogonally machined chips and workpiece subsurface

Production of machined surfaces with optimized mechanical properties requires fundamental process-structure-property knowledge. In this paper, we focus on structure-property gradients in orthogonally cut OFHC Copper chips and the workpiece subsurface. We utilize orientation imaging microscopy and statistical spatial correlation metrics to quantify the microstructure. Constitutive elastic-plastic properties of the workpiece subsurface and chips are measured using spherical nanoindentation. Analysis of the data reveals significant structure and property gradients in both regions. Differences and similarities in structure and property gradients near the workpiece surface and tool-chip interface, and in the chip middle are discussed and explained.

42 ENGINEERING↗

Influence of Charge Transport Layers on Capacitance Measured in Halide Perovskite Solar Cells

Capacitance-based techniques were previously used to measure the electrical properties of halide perovskite solar cells (PSCs) such as defect activation energy and density, carrier concentration, and dielectric constant, which provide key information for evaluating the device performance. Herein, we show that capacitance-based techniques cannot be used to reliably analyze the properties of defects in the perovskite layer or at its interface, since the high-frequency capacitance signature is due to the response of charge carriers in the hole-transport layer (HTL). For HTL-free PSCs, the high-frequency capacitance can be considered as the geometric capacitance for analyzing the dielectric constant of the perovskite layer, since there is no trapping and de-trapping of charge carriers in the perovskite layer. We also find that the low-frequency capacitance signature can be used to calculate the activation energy of the ionic conductivity of the perovskite layer, but the overlapping effects with charge transport materials must be avoided.

14 SOLAR ENERGY↗

Changes in Hydrogen Concentration and Defect State Density at the Poly-Si/SiOx/c-Si Interface Due to Firing

We determined the density of defect states of poly-Si/SiOx/c-Si junctions featuring a wet chemical interfacial oxide from lifetime measurements using the MarcoPOLO model to calculate recombination and contact resistance in poly-Si/SiOx/c-Si-junctions. In samples that did not receive any hydrogen treatment, the Dit,cSi is about 2 × 1012 cm-2 eV1 before firing and rises to 3–7 × 1012 cm2 eV1 during firing at measured peak temperatures between 620 °C and 863 °C. To address the question of why AlOx/SiNy stacks in contrast to pure SiNy layers for hydrogenation during firing provides better passivation quality, we have measured the hydrogen concentrations at the poly-Si/SiOx/c-Si interface as a function of AlOx layer thickness and compared these to J0 and calculated Dit,c-Si values. We observe an increase of the hydrogen concentration at the SiOx/c-Si interface upon firing as a function of the firing temperature that exceeds the defect concentrations at the interface several times. However, the AlOx layer thickness appears to cause an increase in hydrogen concentration at the SiOx/c-Si interface in these samples rather than exhibiting a hydrogen blocking property.

41 EE - Solar Energy Technologies Office (EE-4S)↗

Affordable Estimation of Solvation Contributions to the Adsorption Energies of Oxygenates on Metal Nanoparticles

Electrocatalysts are mainly characterized by their intrinsic adsorption properties. However, the observed electrocatalytic activity ultimately results from the interplay between such properties and various additional interactions within the electrified solid–liquid interface. One of such phenomena is solvation, which can substantially affect the stability of adsorbates. The incorporation of solvation in computational electrocatalysis models can be fully implicit (inaccurate for H-bonded adsorbates), fully explicit (challenging computation of free energies), or embedded. Here, we show that without any need for explicit or implicit media, a microsolvation approach with just three water molecules captures the contribution of co-adsorbed water to the adsorption energies of *OH and *OOH (two important adsorbates for oxygen reduction) on platinum nanoparticles of various sizes. The approach enables an accurate yet inexpensive explicit modeling of solvent–adsorbate interactions in nanoparticles and the calculation of solvation corrections, estimated as -0.59 ± 0.14 and -0.47 ± 0.13 eV for *OH and *OOH adsorption on Pt, respectively.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

In Situ Atomic Tracking on the Interfacial Etching and Reconfiguration of Cu-ReSe 2 Contact during Thermal Annealing

The Schottky barrier height can be greatly affected by the metal diffusion, reaction, and covalent bonding formation at the contact. Exploring novel methods and revealing the fundamental mechanisms for contact engineering are of vital importance for microelectronic devices. Here, in this study, the annealing induced interfacial reactions at Cu-ReSe 2 contact are dynamically revealed from the atomic scale. Accompanied by the diffusion of Se to Cu, ReSe 2 is gradually decomposed to a thin Re interlayer through a “chain-by-chain” manner. Theoretical calculations show that the Cu atoms can facilitate the chemical bond breaking of ReSe 2 , significantly lowering the Se diffusion energy barrier toward Cu. The formed Re/ReSe 2 heterostructure presents a metal-like band structure, which underscores the critical role of Cu in altering the interfacial chemistry and promoting carrier transport across the interface. Our results can provide vital insights into the contact properties of ReSe 2 and provide a possible method for fabricating high-performance ReSe 2 -based devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ab Initio Predictions of Strong Interfaces in Transition-Metal Carbides and Nitrides for Superhard Nanocomposite Coating Applications

Conceiving strong interfaces represents an effective direction in the development of superhard nanocomposite materials for practical applications in protective coatings. Additionally, in the pursuit of engineering strong nanoscale interfaces between cubic rock-salt (B1) domains, we investigate using density functional theory (DFT) coherent interface models designed based on hexagonal (HX) NiAs and WC structures, as well as experiment. The DFT screening of a collection of transition-metal (M = Zr, Hf, Nb, Ta) carbides and nitrides indicates that the interface models provided by the HX polymorphs store little coherency strain and develop an energetic advantage as the valence-electron concentration increases. Finally, our result suggests that harnessing the polymorphism encountered in transition-metal (M = Zr, Hf, Nb, Ta) carbides and nitrides for interface design represents a promising strategy for advancing superhard nanomaterials.

36 MATERIALS SCIENCE↗