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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,531 records · Page 85
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Pyrolyzer Assisted Vapor Transport Deposition of Antimony-Doped Cadmium Telluride

In this study, we developed a new method for in situ Sb doping of CdTe thin films combining vapor transport deposition with a Group V pyrolyzer to address Sb doping concentration and doping efficiency. The Sb doped CdSeTe (CdSeTe:Sb) films were deposited in solar cell structures under variations of Sb dopant source heater, vapor pyrolyzer temperature, and Cd vapor excess. Results indicate that although these parameters do not affect the CdTe morphology or crystal structure, they critically influence doping efficiency and trap concentration. Capacitance-voltage measurements show that a higher dopant heater (TD) or pyrolyzer (TP) temperature leads to higher net carrier concentration, achieving a net carrier concentration of 1016 cm-3 and 20% doping efficiency with a TD/TP combination of 600 degrees C/1100 degrees C. By tuning the Cd/Sb flux ratio during CdSeTe:Sb deposition, the lowest defect concentration is achieved at Cd/Sb of 1.4:1, which produced the best VOC CdSeTe:Sb cell. This demonstrates a path to produce high net carrier concentration polycrystalline CdTe thin film with a low concentration of dopant-induced defects.

14 SOLAR ENERGY↗
DOE OSTI2021

Flexible Fabric-Based IDC Sensors for Conformal Curved Surface Applications

Interdigital capacitor (IDC) sensors are attractive in-situ sensors that can be used to measure permittivity variations in materials. Such sensors could be powerful enablers for cable insulation aging detection. Since insulation aging is correlated with a change in its material permittivity an IDC can measure that change via its measured capacitance. A new thin, flexible fabric-based IDC sensor is introduced for application on conformal curved surfaces such as an electrical cable surface. A multielectrode IDC and its backplane were fabricated using conductive copper polyester taffeta fabrics that were adhesively bonded to nonconductive polyester fabric. The sensor because of its soft flexible structure eliminates the problem of sensor conductor damage which is common for printed circuit board (PCB) type sensors when conformed to the surface of a cable. It also significantly reduces the airgap between the electrodes and the surface that they must contact in order to measure the capacitance. Airgap reduction and consistency are important in order to accurately predict permittivity variations in cable insulation material due to aging. Both PCB-based sensors and the new fabric-based sensors were built and tested on unaged cables and cables that underwent accelerated aging. Results demonstrate the proposed advantages of the novel fabric-based IDC sensor.

interdigital capacitor sensor, IDC, NDE, PCB senso↗
DOE OSTI2018

Electrically Driven Insulator–Metal Transition-Based Devices—Part II: Transient Characteristics

Part II of this paper discusses the transient characteristics of the electrically driven insulator–metal transition (E-IMT) material-based device. To model the full transient characteristics, we modify the electrothermal model developed in Part I to capture extrinsic capacitance and 2-D heat transport effects. In order to test the model against the experiment, we fabricated and tested scaled E-IMT devices with a necked-down design to minimize nonhomogeneity. We show excellent agreement of the predictions of the model with the experimental data, and we find that the IMT device goes through three stages before a steady state is established.These three stages are identified as the times required for the incubation of the IMT transition, positive feedback, and width expansion of the IMT zone within the device. The impact of capacitance and 2-D heat transport is discussed. Furthermore, we show an inverse relation arises between the incubation time and the applied voltage. This paper satisfactorily explains the turn-on transient in a nanoscale E-IMT device within the framework of our electrothermal (Joule heating) model.

Insulator–to-metal transition (IMT)↗
DOE OSTI2022

Temperature Dependence of Charge Distributions and Carrier Mobility in an Undoped Si/SiGe Heterostructure

Capacitance–voltage (C–V ) characteristics and carrier transport properties of 2-D electron gases (2DEGs) in an undoped Si/SiGe heterostructure at T = 4 – 35 K are presented here. In this work, two capacitance plateaus due to density saturation of the 2DEG in the buried Si quantum well (QW) are observed and explained by a model of surface tunneling. The peak mobility at 4 K is 4.1 × 10 5 cm 2 /V·s and enhanced by a factor of 1.97 at an even lower carrier density compared to the saturated carrier density, which is attributed to the effect of remote carrier screening. At T = 35 K, the mobility enhancement with a factor of 1.35 is still observed, which suggests the surface tunneling is still dominant.

42 ENGINEERING↗
DOE OSTI2014

Tunable Transmission Line With Nanopatterned Thin Films for Smart RF Applications

A concept of tunable transmission line (TL) enabled with nanopatterned ferromagnetic permalloy (Py) and ferroelectric lead zirconium titanate (PZT) thin films is presented. The permittivity (εr) of PZT is electrical tunable with dc voltage, and the permeability (μr) of Py is electrical tunable with dc current, thus simultaneous electric tunable capacitance and inductance capability are provided for the proposed TL. The proposed TL has been fabricated and compared with a regular line without nanofilm patterns. Py is patterned with the dimensions of 10 μm × 150 nm and thickness of 100 nm for high built-in anisotropy field. The ferromagnetic resonant frequency is measured to be 6.3 GHz. Compared with the regular TL, the implemented TL has only generated 0.05 dB additional insertion loss at 4 GHz. The electrical tunability of both the capacitance and the inductance has been demonstrated for the first time. By applying the varied dc current (0–150 mA) and the dc voltage (0–20 V), measured results have shown that the proposed line can provide 90° phase shift from 3.75 to 4 GHz with the fixed characteristic impedance. The continuous tuning of the characteristics impedance from 59 to 61 under suitable bias conditions shows its promise as an impedance matching network. Tunable range of both the phase shifter and the impedance matching network can be further increased with thicker and multilayer films.

36 MATERIALS SCIENCE↗
DOE OSTI2021

A Custom Low-Noise Silicon Photodiode Detector Designed for Use With X-Ray Capillary Optics

We present the first results of a custom low-noise silicon photodiode detector designed for use with X-ray capillary optics. This system is intended to perform as a smaller, lighter, and low-powered alternative to currently existing X-ray telescope technologies. The detector has an active area with a diameter of 100 μm, and its small size leads to a low capacitance of well under 1 pF and a leakage current of 1 pA or less at the depletion voltage. We tested the detector with both a discrete preamp and an ultralow-noise front-end application-specific integrated circuit (ASIC). The front-end ASIC, developed at Brookhaven National Laboratory, was designed for low-capacitance detectors but had not been previously tested with a detector. Here, we discuss the detector design, the experimental setup, and the resulting detector performance. Using radioactive laboratory sources, we measure a full-width at half-maximum (FWHM) of 211 ± 8 eV at 5.9 keV with the ASIC and are able to set the threshold as low as 0.6 keV.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2019

Analysis of Diode Reverse Recovery Effect on ZVS Condition for GaN-Based LLC Resonant Converter

LLC resonant converter can achieve zero voltage switching (ZVS) for primary-side devices and zero current switching (ZCS) for secondary-side rectifiers. However, the reverse recovery and junction capacitance (C j ) of secondary-side diode critically affect the ZVS condition of primary-side switches. The effect of C j has been discussed in literature, but not the reverse recovery. In this paper, the reverse recovery charge (Q rr ) is converted to an equivalent capacitance (C rr_eq ) for the study of primary-side ZVS performance. An accurate model during deadtime is derived and further applied to characterize ZVS performance with different reverse recovery charges in different regions. The concept of establishing parameter C total to consider both C j and C rr_eq is proposed to evaluate the effect of the secondary-side rectifiers. This concept provides the guideline for diode and synchronous rectification MOSFET selection to ensure ZVS condition for LLC converters. To verify the concept and the derived model,a 200/400 V 400 W LLC resonant converter prototype operating from 200 to 700 kHz is built and its ZVS performances with different diodes are compared. Two issues caused by Q rr effect, including V ds reverse charging and asymmetrical waveform during deadtime, are explained thoroughly as well.

42 ENGINEERING↗
DOE OSTI2020

Improved Frequency-Domain Steady-State Modeling of the Dual-Active-Bridge Converter Considering Finite ZVS Transition Time Effects

This article presents an improved analytical modeling (IAM) approach for the dual-active-bridge (DAB) converter in the frequency-domain. Specifically, finite transition times are incorporated into the improved modeling that are significant in DAB converters operated at high frequency. The IAM approach is first motivated by comparing traditional frequency-domain modeling against realistic simulation results in LTspice. Next, the IAM approach is mathematically developed in an iterative fashion, where the conventional frequency-domain approach is used as the initialization of the operational behavior of the converter. Subsequent iterations of the IAM algorithm incorporate finite rise- and falltimes of device output capacitances based on detailed switching behavior analyses, which may considerably perturb the desired modulation parameters (i.e., phase shift and zero states). While the initially proposed IAM approach demonstrates advantages over ideal modeling, it is still shown to exhibit errors when applied to device transitions with significant nonlinearity in parasitic output capacitance. To account for this, a three-slope approximation to the switching transition is then motivated and developed, which enables significantly improved steady-state prediction accuracy. Simulation and experimental results confirm unacceptable inaccuracies associated with the conventional frequency-domain modeling across a wide range of operating conditions, alongside enhanced accuracy provided by the proposed modeling approach.

14 SOLAR ENERGY↗
DOE OSTI2020

Investigation of Various Transformer Topologies for HF Isolation Applications

High-frequency (HF) transformers are an essential part of many power electronic devices. The performance and behavior of HF transformers can greatly affect the efficiency and performance of all systems, particularly, from a parasitic parameter point of view. In this article, HF transformers' parasitic parameters, such as leakage inductances and parasitic capacitances, are analyzed using a novel analytical method, finite element method (FEM), and experimental measurements of different structures and winding arrangements. Also, the magnetic field, electric field, electric displacement field, and electric potential distribution within the transformers are simulated and analyzed. Four different HF transformers with E and U cores with different windings are designed and analyzed. Investigation outcomes help to classify structures according to the trade-off between leakage inductances and series parasitic capacitances. This information can later be used for the optimal selection and design of transformers as a function of their operating frequency for any power rating and voltage level. Moreover, 3-D FEM and experimental results validate the proposed methodology to be used for designing HF transformers in high-voltage/power applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Single-Phase On-Board Bidirectional PEV Charger for V2G Reactive Power Operation

This paper presents the design and implementation of a single-phase on-board bidirectional plug-in electric vehicle (PEV) charger that can provide reactive power support to the utility grid in addition to charging the vehicle battery. The topology consists of two-stages: a full-bridge ac-dc boost converter; and a half-bridge bidirectional dc-dc converter. The charger operates in two quadrants in the active-reactive power (PQ) power plane with five different operation modes (i.e., charging-only, charging-capacitive, charging-inductive, capacitive-only, and inductive-only). This paper also presents a unified controller to follow utility PQ commands in a smart grid environment. The cascaded two-stage system controller receives active and reactive power commands from the grid, and results in line current and battery charging current references while also providing a stable dynamic response. The vehicle's battery is not affected during reactive power operation in any of the operation modes. Finally, testing the unified system controller with a 1.44 kVA experimental charger design demonstrates the successful implementation of reactive power support functionality of PEVs for future smart grid applications.

battery charger↗
DOE OSTI2016

10-Gb/s Distributed Amplifier-Based VCSEL Driver IC With ESD Protection in 130-nm CMOS

Here, this paper presents a low-power 10-Gb/s vertical cavity surface emitting laser (VCSEL) driver integrated circuit (IC) with electrostatic discharge (ESD) protection in the 130-nm CMOS technology. A distributed amplifier (DA)-based modulator is proposed to boost the driver bandwidth. It employs artificial transmission lines to cancel the device parasitic capacitances of the driver. A distributed ESD protection technique is applied to equalize the group delay of the DA to optimize the jitter performance. To minimize the silicon area, the optimal number of DA taps in the proposed modulator has been derived. To compensate for the capacitive load and the channel losses at the output of the driver, a frequency-domain preemphasis scheme is proposed. The proposed DA modulator occupies an area of 0.69 mm 2 , and the entire driver IC has a die size of 2 mm×2 mm, including the pads. Both electrical and optical tests have been carried out to characterize the performance of the proposed VCSEL driver IC. Measurements at a data rate of 10-Gb/s demonstrate a typical power consumption of 85 mW under a single 2.5 V supply voltage (49 mW, if separate 1.2 and 2.5 V supplies are used) and an rms jitter of 0.63 and 1.12 ps for the electrical test and optical test, respectively.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

Effect of Substrate Temperature on the Electrochemical and Supercapacitance Properties of Pulsed Laser-Deposited Titanium Oxynitride Thin Films

Electrocatalytically active titanium oxynitride (TiNO) thin films were fabricated on commercially available titanium metal plates using a pulsed laser deposition method for energy storage applications. The elemental composition and nature of bonding were analyzed using X-ray photoelectron spectroscopy (XPS) to reveal the reacting species and active sites responsible for the enhanced electrochemical performance of the TiNO electrodes. Symmetric supercapacitor devices were fabricated using two TiNO working electrodes separated by an ion-transporting layer to analyze their real-time performance. The galvanostatic charge–discharge studies on the symmetric cell have indicated that TiNO films deposited on the polycrystalline titanium plates at lower temperatures are superior to TiNO films deposited at higher temperatures in terms of storage characteristics. For example, TiNO films deposited at 300 °C exhibited the highest specific capacity of 69 mF/cm 2 at 0.125 mA/cm 2 with an energy density of 7.5 Wh/cm 2 . The performance of this supercapacitor (300 °C TiNO) device is also found to be ~22% better compared to that of a 500 °C TiNO supercapacitor with a capacitance retention ability of 90% after 1000 cycles. Furthermore, the difference in the electrochemical storage and capacitance properties is attributed to the reduced leaching away of oxygen from the TiNO films by the Ti plate at lower deposition temperatures, leading to higher oxygen content in the TiNO films and, consequently, a high redox activity at the electrode/electrolyte interface.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2013

Ion flux and ion distribution function measurements in synchronously pulsed inductively coupled plasmas

Changes in the ion flux and the time-averaged ion distribution functions are reported for pulsed, inductively coupled RF plasmas (ICPs) operated over a range of duty cycles. For helium and argon plasmas, the ion flux increases rapidly after the start of the RF pulse and after about 50 {mu}s reaches the same steady state value as that in continuous ICPs. Therefore, when the plasma is pulsed at 1 kHz, the ion flux during the pulse has a value that is almost independent of the duty cycle. By contrast, in molecular electronegative chlorine/chlorosilane plasmas, the ion flux during the pulse reaches a steady state value that depends strongly on the duty cycle. This is because both the plasma chemistry and the electronegativity depend on the duty cycle. As a result, the ion flux is 15 times smaller in a pulsed 10% duty cycle plasma than in the continuous wave (CW) plasma. The consequence is that for a given synchronous RF biasing of a wafer-chuck, the ion energy is much higher in the pulsed plasma than it is in the CW plasma of chlorine/chlorosilane. Under these conditions, the wafer is bombarded by a low flux of very energetic ions, very much as it would in a low density, capacitively coupled plasma. Therefore, one can extend the operating range of ICPs through synchronous pulsing of the inductive excitation and capacitive chuck-bias, offering new means by which to control plasma etching.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2014

Gettering of hydrogen and methane from a helium gas mixture

In this study, the authors developed an approach for accurately quantifying the helium content in a gas mixture also containing hydrogen and methane using commercially available getters. The authors performed a systematic study to examine how both H{sub 2} and CH{sub 4} can be removed simultaneously from the mixture using two SAES St 172{sup ®} getters operating at different temperatures. The remaining He within the gas mixture can then be measured directly using a capacitance manometer. The optimum combination involved operating one getter at 650 °C to decompose the methane, and the second at 110 °C to remove the hydrogen. This approach eliminated the need to reactivate the getters between measurements, thereby enabling multiple measurements to be made within a short time interval, with accuracy better than 1%. The authors anticipate that such an approach will be particularly useful for quantifying the He-3 in mixtures that include tritium, tritiated methane, and helium-3. The presence of tritiated methane, generated by tritium activity, often complicates such measurements.

42 ENGINEERING↗
DOE OSTI2015

Molybdenum oxide and molybdenum oxide-nitride back contacts for CdTe solar cells

Molybdenum oxide (MoO{sub x}) and molybdenum oxynitride (MoON) thin film back contacts were formed by a unique ion-beam sputtering and ion-beam-assisted deposition process onto CdTe solar cells and compared to back contacts made using carbon–nickel (C/Ni) paint. Glancing-incidence x-ray diffraction and x-ray photoelectron spectroscopy measurements show that partially crystalline MoO{sub x} films are created with a mixture of Mo, MoO{sub 2}, and MoO{sub 3} components. Lower crystallinity content is observed in the MoON films, with an additional component of molybdenum nitride present. Three different film thicknesses of MoO{sub x} and MoON were investigated that were capped in situ in Ni. Small area devices were delineated and characterized using current–voltage (J-V), capacitance–frequency, capacitance–voltage, electroluminescence, and light beam-induced current techniques. In addition, J-V data measured as a function of temperature (JVT) were used to estimate back barrier heights for each thickness of MoO{sub x} and MoON and for the C/Ni paint. Characterization prior to stressing indicated the devices were similar in performance. Characterization after stress testing indicated little change to cells with 120 and 180-nm thick MoO{sub x} and MoON films. However, moderate-to-large cell degradation was observed for 60-nm thick MoO{sub x} and MoON films and for C/Ni painted back contacts.

14 SOLAR ENERGY↗
DOE OSTI2015

Fluid simulation of the bias effect in inductive/capacitive discharges

Computer simulations are performed for an argon inductively coupled plasma (ICP) with a capacitive radio-frequency bias power, to investigate the bias effect on the discharge mode transition and on the plasma characteristics at various ICP currents, bias voltages, and bias frequencies. When the bias frequency is fixed at 13.56 MHz and the ICP current is low, e.g., 6 A, the spatiotemporal averaged plasma density increases monotonically with bias voltage, and the bias effect is already prominent at a bias voltage of 90 V. The maximum of the ionization rate moves toward the bottom electrode, which indicates clearly the discharge mode transition in inductive/capacitive discharges. At higher ICP currents, i.e., 11 and 13 A, the plasma density decreases first and then increases with bias voltage, due to the competing mechanisms between the ion acceleration power dissipation and the capacitive power deposition. At 11 A, the bias effect is still important, but it is noticeable only at higher bias voltages. At 13 A, the ionization rate is characterized by a maximum at the reactor center near the dielectric window at all selected bias voltages, which indicates that the ICP power, instead of the bias power, plays a dominant role under this condition, and no mode transition is observed. Indeed, the ratio of the bias power to the total power is lower than 0.4 over a wide range of bias voltages, i.e., 0–300 V. Besides the effect of ICP current, also the effect of various bias frequencies is investigated. It is found that the modulation of the bias power to the spatiotemporal distributions of the ionization rate at 2 MHz is strikingly different from the behavior observed at higher bias frequencies. Furthermore, the minimum of the plasma density appears at different bias voltages, i.e., 120 V at 2 MHz and 90 V at 27.12 MHz.

42 ENGINEERING↗
DOE OSTI2015

Effect of GaN surface treatment on Al 2 O 3 /n-GaN MOS capacitors

The surface preparation for depositing Al 2 O 3 for fabricating Au/Ni/Al 2 O 3 /n-GaN (0001) metal oxide semiconductor (MOS) capacitors was optimized as a step toward realization of high performance GaN MOSFETs. The GaN surface treatments studied included cleaning with piranha (H 2 O 2 :H 2 SO 4 = 1:5), (NH 4 )(2)S, and 30% HF etches. By several metrics, the MOS capacitor with the piranha-etched GaN had the best characteristics. It had the lowest capacitance-voltage hysteresis, the smoothest Al 2 O 3 surface as determined by atomic force microscopy (0.2nm surface roughness), the lowest carbon concentration (similar to 0.78%) at the Al 2 O 3 /n-GaN interface (from x-ray photoelectron spectroscopy), and the lowest oxide-trap charge (Q(T) = 1.6 x 10(11) cm(-2) eV(-1)). Its interface trap density (D-it = 3.7 x 10(12) cm(-2) eV(-1)), as measured with photon-assisted capacitance- voltage method, was the lowest from conduction band-edge to midgap. (C) 2015 American Vacuum Society.

36 MATERIALS SCIENCE↗