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At least 1,531 records · Page 85

Thickness dependence of electronic structure and optical properties of a correlated van der Waals antiferromagnetic NiPS 3 thin film

In this work, we study the thickness dependence of the electronic, magnetic, and optical properties of a NiPS 3 thin film, which is an antiferromagnetic charge-transfer insulator. Utilizing state-of-the-art advanced density functionals, we find the antiferromagnetic zigzag order, the band gap, and the main peaks in the dielectric tensor are all in good agreement with the corresponding experimental values. Upon thinning, the zigzag antiferromagnetic order becomes virtually degenerate with a competing Néel order, consistent with the suppression of long-range order observed by Raman spectroscopy due to strong magnetic fluctuations. Additionally, due to the robustness of the electronic band gap observed by spectroscopic ellipsometry measurements above T N , we suggest that the persistence of the band gap is driven by strong electronic correlations. Other systematic changes in electronic dispersion, effective mass, and Kerr angle with thickness are also discussed. Finally, an applied external electric field is found to suppress the band gap by up to 13%, until precipitating an insulator-metal transition at a critical field value of 0.7 eV/Å.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effect of the length of the poloidal ducts on flow balancing in a liquid metal blanket

To address concerns associated with liquid metal (LM) flow balancing among multiple poloidal channels of a LM blanket, we investigate the factors (first of all the length of the channels) that influence the flow distribution when the duct walls are electrically insulated. We simulate LM MHD flow through multiple channels fed by a prototypical manifold for a range of channel lengths using a 3D MHD solver, HIMAG. The simplified manifold geometry consists of a rectangular, electrically insulated feeding duct which suddenly expands such that the duct thickness in the magnetic field direction abruptly increases by a factor of 4. After a short length downstream of the expansion, the flow is divided into three identical parallel channels. By measuring the flow rate in each of the channels, we conclude that flow balance among the channels is improved by increasing the length of the channels. An effort is made to obtain scaling laws that characterize flow balancing as a function of the flow parameters and the manifold geometry using a Resistor Network Model (RNM). Associated Hartman and Reynolds numbers in the computations were ~10 3 and 10 2 respectively. Compared to the full 3D analysis, the proposed RNM suggests a relatively quick and simpler way of computing the blanket length that might be needed to provide balanced flow among the parallel channels.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Resistivity, I–V characteristics and Hall effect in Dy{sub 0.5}(Sr{sub 1-x}Ca{sub x}){sub 0.5}MnO{sub 3} manganites

Highlights: • The resistivity of Dy{sub 0.5}(Sr{sub 1-x}Ca{sub x}){sub 0.5}MnO{sub 3} (x = 0 and x = 0.3) systems showed that these samples exhibited an insulating behavior. • I–V characteristics of both samples deviate from the Ohmic behavior. • Magnetoresistance and electroresistance provided negative values. • Hall resistivity ρxy of the Dy{sub 0.5}Sr{sub 0.5}MnO{sub 3} sample presents electron-like type of the charge carriers. • The temperature coefficient of resistance (TCR) shows that both systems can be good candidates for bolometer applications. - Abstract: Dy{sub 0.5}(Sr{sub 1-x}Ca{sub x}){sub 0.5}MnO{sub 3} (x = 0 and x = 0.3) manganites were synthesized using sol-gel method. Both samples exhibited an insulating behavior in the whole temperature range. Even the application of 5 T magnetic fields does not change this state. Conduction mechanisms were also investigated. The I–V characteristics of both samples present Ohmic behavior at minor voltages. Magnetoresistance and electroresistance were also studied. The thermal variation of Hall resistivity of Dy{sub 0.5}Sr{sub 0.5}MnO{sub 3} was determined in cooling down and warming up processes revealing electron-like type of charge carriers. Temperature coefficient of resistance shows significant values for both systems making them good candidates for bolometer applications.

36 MATERIALS SCIENCE↗

Antiferromagnetic metal phase in an electron-doped rare-earth nickelate

Long viewed as passive elements, antiferromagnetic materials have emerged as promising candidates for spintronic devices due to their insensitivity to external fields and potential for high-speed switching. Recent work exploiting spin and orbital effects has identified ways to electrically control and probe the spins in metallic antiferromagnets, especially in non-collinear or non-centrosymmetric spin structures. The rare-earth nickelate NdNiO 3 is known to be a non-collinear antiferromagnet in which the onset of antiferromagnetic ordering is concomitant with a transition to an insulating state. In this work, we find that for low electron doping, the magnetic order on the nickel site is preserved, whereas electronically, a new metallic phase is induced. We show that this metallic phase has a Fermi surface that is mostly gapped by an electronic reconstruction driven by bond disproportionation. Furthermore, we demonstrate the ability to write to and read from the spin structure via a large zero-field planar Hall effect. Our results expand the already rich phase diagram of rare-earth nickelates and may enable spintronics applications in this family of correlated oxides.

36 MATERIALS SCIENCE↗

Magnetoquantum oscillations in the specific heat of a topological Kondo insulator

Surprisingly, magnetoquantum oscillations (MQOs) characteristic of a metal with a Fermi surface have been observed in measurements of the topological Kondo insulator SmB 6 . As these MQO have only been observed in measurements of magnetic torque (dHvA) and not in measurements of magnetoresistance (SdH), a debate has arisen as to whether the MQO are an extrinsic effect arising from rare-earth impurities, defects, and/or aluminum inclusions or an intrinsic effect revealing the existence of charge-neutral excitations. In this work, we report the first observation of MQO in the low-temperature specific heat of SmB 6 . The observed frequencies and their angular dependence for these flux-grown samples are consistent with previous results based on magnetic torque for SmB 6 but the inferred effective masses are significantly larger than previously reported. Such oscillations can only be observed if the MQO are of bulk thermodynamic origin; the measured magnetic-field dependent oscillation amplitude and effective mass allow us to rule out suggestions of an extrinsic, aluminum inclusion-based origin for the MQO.

topological materials↗

Temperature and composition phase diagram in the iron-based ladder compounds Ba 1 - x Cs x Fe 2 Se 3

We investigated the iron-based ladder compounds (Ba,Cs)Fe₂Se₃. Their parent compounds BaFe₂Se₃ and CsFe₂Se₃ have different space groups, formal valences of Fe, and magnetic structures. Electrical resistivity, specific heat, magnetic susceptibility, x-ray diffraction, and powder neutron diffraction measurements were conducted to obtain a temperature and composition phase diagram of this system. Block magnetism observed in BaFe₂Se₃ is drastically suppressed with Cs doping. In contrast, stripe magnetism observed in CsFe₂Se₃ is not so fragile against Ba doping. A new type of magnetic structure appears in intermediate compositions, which is similar to stripe magnetism of CsFe₂Se₃, but interladder spin configuration is different. Intermediate compounds show insulating behavior, nevertheless a finite T-linear contribution in specific heat was obtained at low temperatures.

Hawai, Takafumi↗

Electromagnetic connector

Connector pair consists of two iron cores brought together a short distance from each other. Each core is wound with insulated wire. Ac signal is connected through the pair across the gap by magnetic induction. Device can be used underwater or in flammable atmosphere.

Gardner, W. C.↗

Wiring assembly and method of forming a channel in a wiring assembly for receiving conductor and providing separate regions of conductor contact with the channel

A conductor assembly and method for constructing an assembly of the type which, when conducting current, generates a magnetic field or which, in the presence of a changing magnetic field, induces a voltage. In one embodiment the method provides a first insulative layer tubular in shape and including a surface along which a conductor segment may be positioned. A channel formed in the surface of the insulative layer defines a first conductor path and includes a surface of first contour in cross section along a first plane transverse to the conductor path. A segment of conductor having a surface of second contour in cross section is positioned at least partly in the channel and extends along the conductor path. Along the first plane, contact between the conductor surface of second contour and the channel surface of first contour includes at least two separate regions of contact.

42 ENGINEERING↗

Wiring assembly and method of forming a channel in a wiring assembly for receiving conductor and providing separate regions of conductor contact with the channel

A conductor assembly and method for constructing an assembly of the type which, when conducting current, generates a magnetic field or which, in the presence of a changing magnetic field, induces a voltage. In one embodiment the method provides a first insulative layer tubular in shape and including a surface along which a conductor segment may be positioned. A channel formed in the surface of the insulative layer defines a first conductor path and includes a surface of first contour in cross section along a first plane transverse to the conductor path. A segment of conductor having a surface of second contour in cross section is positioned at least partly in the channel and extends along the conductor path. Along the first plane, contact between the conductor surface of second contour and the channel surface of first contour includes at least two separate regions of contact.

Stelzer, Gerald↗

Multi-scale nonlinear stress analysis of Nb 3 Sn superconducting accelerator magnets

A multi-scale nonlinear procedure to analyze the stress in Nb 3 Sn superconducting accelerator magnets is presented to address one of the most challenging obstacles currently facing the successful development of high-field superconducting magnets—the issue of stress management. The study demonstrates that gaskets (special nonlinear materials) are capable of modeling the complex nonlinear deformation behavior of insulation layers within the Nb 3 Sn coil block and that Hill materials (orthotropic materials utilizing the Hill yield criterion) are suitable to enable homogenization of the filamentary regions and the resin-impregnated Nb 3 Sn Rutherford cables. With the whole magnet under preload, cool-down, and Lorentz forces, the nonlinear behavior of the Nb 3 Sn coil was simulated, in three orthongonal axes, by the combined properties of the gaskets (insulation layers) and Hill materials (resin-impreganted cable). The procedure entailes minimal material assumptions because it incorporated measured stress-strain curves in the analysis. The coil was simulated to a high level of detail consisting of the insulation layers and resin-impregnated cables. The computed compressive azimuthal stresses of the cables were used to assess the stress-induced performance degradation. Through submodeling, the area-weighted average axial strains of the strands were computed and employed to evaluate the strain-induced performance degradation. The overall performance degradation of the Nb 3 Sn coil was thus obtained, and this information was subsequently used to guide the design of the overall magnet. Besides Nb 3 Sn magnets, this procedure can also be employed in the design of LTS, HTS, and room temperature magnets or in any composite structures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Anomalous Hall effect in YIG|Pt bilayers

We measure the ordinary and the anomalous Hall effect in a set of yttrium iron garnet|platinum (YIG|Pt) bilayers via magnetization orientation dependent magnetoresistance experiments. Our data show that the presence of the ferrimagnetic insulator YIG leads to an anomalous Hall effect like voltage in Pt, which is sensitive to both Pt thickness and temperature. Interpretation of the experimental findings in terms of the spin Hall anomalous Hall effect indicates that the imaginary part of the spin mixing conductance G{sub i} plays a crucial role in YIG|Pt bilayers. In particular, our data suggest a sign change in G{sub i} between 10 K and 300 K. Additionally, we report a higher order Hall effect contribution, which appears in thin Pt films on YIG at low temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A new deflection technique applied to an existing scheme of electrostatic accelerator for high energy neutral beam injection in fusion reactor devices

A scheme of a neutral beam injector (NBI), based on electrostatic acceleration and magneto-static deflection of negative ions, is proposed and analyzed in terms of feasibility and performance. The scheme is based on the deflection of a high energy (2 MeV) and high current (some tens of amperes) negative ion beam by a large magnetic deflector placed between the Beam Source (BS) and the neutralizer. This scheme has the potential of solving two key issues, which at present limit the applicability of a NBI to a fusion reactor: the maximum achievable acceleration voltage and the direct exposure of the BS to the flux of neutrons and radiation coming from the fusion reactor. In order to solve these two issues, a magnetic deflector is proposed to screen the BS from direct exposure to radiation and neutrons so that the voltage insulation between the electrostatic accelerator and the grounded vessel can be enhanced by using compressed SF{sub 6} instead of vacuum so that the negative ions can be accelerated at energies higher than 1 MeV. By solving the beam transport with different magnetic deflector properties, an optimum scheme has been found which is shown to be effective to guarantee both the steering effect and the beam aiming.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Controlling and visualizing Dirac physics in topological semimetal heterostructures

A bulk crystal of cadmium arsenide is a three-dimensional Dirac semimetal, but, in a thin film, it can behave like a three-dimensional topological insulator. This tunability provides unique opportunities to manipulate and explore a topological insulator phase. However, an obstacle to engineering such tunability is the subtlety of transport-based discriminants for topological phases. In this work, the quantum capacitance of cadmium arsenide–based heterostructures provides two direct experimental signatures of three-dimensional topological insulator physics: an insulating three-dimensional bulk and a Landau level at zero energy that does not disperse in a magnetic field. We proceed to join our ability to see these fingerprints of the topological surface states with flexibility afforded by our epitaxial heterostructures to demonstrate a route toward controlling the energy of the Dirac nodes on each surface. These results point to new avenues for engineering topological insulators based on cadmium arsenide.

36 MATERIALS SCIENCE↗

Metal–insulator transition tuned by oxygen vacancy migration across TiO2/VO2 interface

Abstract Oxygen defects are essential building blocks for designing functional oxides with remarkable properties, ranging from electrical and ionic conductivity to magnetism and ferroelectricity. Oxygen defects, despite being spatially localized, can profoundly alter global properties such as the crystal symmetry and electronic structure, thereby enabling emergent phenomena. In this work, we achieved tunable metal–insulator transitions (MIT) in oxide heterostructures by inducing interfacial oxygen vacancy migration. We chose the non-stoichiometric VO 2-δ as a model system due to its near room temperature MIT temperature. We found that depositing a TiO 2 capping layer on an epitaxial VO 2 thin film can effectively reduce the resistance of the insulating phase in VO 2 , yielding a significantly reduced R OFF /R ON ratio. We systematically studied the TiO 2 /VO 2 heterostructures by structural and transport measurements, X-ray photoelectron spectroscopy, and ab initio calculations and found that oxygen vacancy migration from TiO 2 to VO 2 is responsible for the suppression of the MIT. Our findings underscore the importance of the interfacial oxygen vacancy migration and redistribution in controlling the electronic structure and emergent functionality of the heterostructure, thereby providing a new approach to designing oxide heterostructures for novel ionotronics and neuromorphic-computing devices.

36 MATERIALS SCIENCE↗

Two-dimensional superconductor-insulator quantum phase transitions in an electron-doped cuprate

Here, we use an ionic liquid-assisted electric-field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic-field (B)-induced SIT in the liquid-gated superconducting film. Finite-size scaling analysis indicates that SITs induced both by electric and by magnetic fields are quantum phase transitions and the transitions are governed by percolation effects-quantum mechanical in the former and classical in the latter cases. Compared to the hole-doped cuprates, the SITs in the electron-doped system occur at critical sheet resistances (R c ) much lower than the pair quantum resistance R Q = h/(2e) 2 = 6.45 kΩ, suggesting the possible existence of fermionic excitations at finite temperatures at the insulating phase near the SITs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Strongly correlated Chern insulators in magic-angle twisted bilayer graphene

Interactions between electrons and the topology of their energy bands can create unusual quantum phases of matter. Most topological electronic phases appear in systems with weak electron–electron interactions. The instances in which topological phases emerge only as a result of strong interactions are rare and mostly limited to those realized in intense magnetic fields. The discovery of flat electronic bands with topological character in magic-angle twisted bilayer graphene (MATBG) has created a unique opportunity to search for strongly correlated topological phases. Here we introduce a local spectroscopic technique using a scanning tunnelling microscope to detect a sequence of topological insulators in MATBG with Chern numbers C = ±1, ±2 and ±3, which form near filling factors of ±3, ±2 and ±1 electrons per moiré unit cell, respectively, and are stabilized by modest magnetic fields. One of the phases detected here (C = +1) was previously observed when the sublattice symmetry of MATBG was intentionally broken by a hexagonal boron nitride substrate, with interactions having a secondary role. We also demonstrate that strong electron–electron interactions alone can produce not only the previously observed phase, but also other unexpected Chern insulating phases in MATBG. The full sequence of phases that we observe can be understood by postulating that strong correlations favour breaking time-reversal symmetry to form Chern insulators that are stabilized by weak magnetic fields. Our findings illustrate that many-body correlations can create topological phases in moiré systems beyond those anticipated from weakly interacting models.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Reentrant Correlated Insulators in Twisted Bilayer Graphene at 25 T ( 2 π Flux)

Twisted bilayer graphene (TBG) is remarkable for its topological flat bands, which drive strongly interacting physics at integer fillings, and its simple theoretical description facilitated by the Bistritzer-MacDonald Hamiltonian, a continuum model coupling two Dirac fermions. Because of the large moiré unit cell, TBG offers the unprecedented opportunity to observe reentrant Hofstadter phases in laboratory-strength magnetic fields near 25 T. This Letter is devoted to magic angle TBG at 2π flux where the magnetic translation group commutes. Here we use a newly developed gauge-invariant formalism to determine the exact single-particle band structure and topology. We find that the characteristic TBG flat bands reemerge at 2π flux, but, due to the magnetic field breaking C 2z T, they split and acquire Chern number ±1. We show that reentrant correlated insulating states appear at 2π flux driven by the Coulomb interaction at integer fillings, and we predict the characteristic Landau fans from their excitation spectrum.

36 MATERIALS SCIENCE↗