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All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Atmospheric pressure plasma treatment of skin: penetration into hair follicles

Sterilization of skin prior to surgery is challenged by the reservoir of bacteria that resides in hair follicles. Atmospheric pressure plasma jets (APPJs) have been proposed as a method to treat and deactivate these bacteria as atmospheric plasmas are able to penetrate into structures and crevices with dimensions similar to those found in hair follicles. In this paper, we discuss results from a computational investigation of an APPJ sustained in helium flowing into ambient air, and incident onto a layered dielectric similar to human skin in which there are idealized hair follicles. We found that, depending on the location of the follicle, the bulk ionization wave (IW) incident onto the skin, or the surface IW on the skin, are able to launch IWs into the follicle. The uniformity of treatment of the follicle depends on the location of the first entry of the plasma into the follicle on the top of the skin. Typically, only one side of the follicle is treated on for a given plasma pulse, with uniform treatment resulting from rastering the plasma jet across the follicle over many pulses. Plasma treatment of the follicle is sensitive to the angle of the follicle with respect to the skin, width of the follicle pocket, conductivity of the dermis and thickness of the underlying subcutaneous fat layer, the latter due to the change in capacitance of the tissue.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2018

Total dose effect of Al 2 O 3 -based metal–oxide–semiconductor structures and its mechanism under gamma-ray irradiation

In our work, insights into the total dose response and native point defect behavior in the Al2O3 gate dielectric during irradiation were gained by gamma-ray irradiation experiments and first-principles calculations. It is found that the O vacancy (VO) can act as a hole trap in the Al2O3 gate dielectric during irradiation, leading to the negative shift of the capacitance–voltage (C–V) curves of the Al2O3-based metal–oxide–semiconductor (MOS) structure. Our calculations show that the neutral defect VO becomes a +2 charged center after irradiation, and the positively charged VO is a kind of conductive path for electrons, which contributes to an increase of the leakage current in the irradiated MOS capacitors. Additionally, the trapped holes are accumulated with irradiation doses, which can lower the barrier height of the Al2O3 gate oxide and further cause the increase of the leakage current. The other native point defects in the Al2O3 layer, such as aluminum vacancy (VAl), aluminum interstitial (Ali) and oxygen interstitial (Oi), only act as fixed charge centers during irradiation. Net negative charges existing in the Al2O3 layers before irradiation are mainly induced by the negatively charged defects of VAl and Oi.

Engineering↗
DOE OSTI2023

Electrochemical performance of ionic polymer metal composite under tensile loading

Abstract Cracks in polymer composites can lead to premature failure, which can be disastrous for polymer-based energy storage devices. Detecting these cracks is essential to guarantee the reliability and safety of such devices. However, detecting cracks in composite polymers such as ionic polymer metal composites (IPMCs) is a challenging task, which makes it difficult to ensure their performance and safety. The overall goal of this study is to investigate the effect of cracks or damage caused by tensile loading on the mechanical properties and electrochemical characteristics of IPMC based capacitors. During tensile testing, the deformation of the IPMC strips causes changes in the ion distribution and concentration in the polymer matrix, influencing the performance of the material. The measurements were conducted utilizing electrochemical impedance spectroscopy at a room temperature ( 21 ∘ C ) and frequency range of 10 KHz to 1 Hz. The method utilized in this study proved to be easy and quick with consistent results. The IPMC capacitor was found to increase its capacitance after major cracking in the Pt electrodes from high tensile mechanical loads. Furthermore, at lower frequency range (<100 Hz), the real ( ε ′ ) and imaginary ( ε ′ ′ ) part of permittivity increase with the addition of loads. This displays that the dielectric property of the material is affected due to the increasing of the loads. It is concluded that, at frequencies above 100 Hz, the permittivity is weakly load dependent.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Brighter-fatter Effect in Near-infrared Detectors—III. Fourier-domain Treatment of Flat Field Correlations and Application to WFIRST

Weak gravitational lensing has emerged as a leading probe of the growth of cosmic structure. However, the shear signal is very small and accurate measurement depends critically on our ability to understand how non-ideal instrumental effects affect astronomical images. The Wide-Field Infrared Survey Telescope (WFIRST) will fly a focal plane containing 18 Teledyne H4RG-10 near-infrared detector arrays, which present different instrument calibration challenges from previous weak lensing observations. Previous work [Paper I: Hirata & Choi, PASP, 132, 014501 (2020); and Paper II: Choi & Hirata, PASP, 132, 014502 (2020)] has shown that correlation functions of flat field images, including cross-correlations between different time slices that are enabled by the non-destructive read capability of the infrared detectors, are effective tools for disentangling linear and nonlinear inter-pixel capacitance (IPC) and the brighter-fatter effect (BFE). Here we present a Fourier-domain treatment of the flat field correlations, which allows us to expand the previous formalism to all orders in IPC, BFE, and classical nonlinearity. We show that biases in simulated flat field analyses in Paper I are greatly reduced through the use of this formalism. We then apply this updated formalism to flat field data from three WFIRST flight candidate detectors, and explore the robustness to variations in the analysis. We find that the BFE is present in all three detectors, and that its contribution to the flat field correlations dominates over the nonlinear IPC, in accordance with the results from Paper II on a development detector. The magnitude of the BFE is such that the effective area of a pixel is increased by (3.54 ± 0.03) × 10 -7 for every electron deposited in a neighboring pixel (sensor chip assembly [SCA] 20829, statistical error, not IPC-deconvolved). We compare IPC maps from flat field autocorrelation measurements to those obtained from the single pixel reset method and find a median difference of 0.113% for SCA 20829. After further diagnosis of this difference, we ascribe it largely to an additional source of cross-talk, the vertical trailing pixel effect, and recommend further work to develop a model for this effect. These results represent a significant step toward calibration of the non-ideal effects in WFIRST detectors.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2018

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4 th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1×10 14 and 5×10 15 1–MeV– n eq . The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1×10 15 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. Furthermore, the results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2019

Fabrication and performance of AC-coupled LGADs

Detectors that can simultaneously provide fine time and spatial resolution have attracted wide-spread interest for applications in several fields such as high-energy and nuclear physics as well as in low-energy electron detection, photon science, photonics and imaging. Low-Gain Avalanche Diodes (LGADs), being fabricated on thin silicon substrates and featuring a charge gain of up to 100, exhibit excellent timing performance. Since pads much larger than the substrate thickness are necessary to achieve a spatially uniform multiplication, a fine pad pixelation is difficult. To overcome this limitation, the AC-coupled LGAD approach was introduced. In this type of device, metal electrodes are placed over an insulator at a fine pitch, and signals are capacitively induced on these electrodes. At Brookhaven National Laboratory, we have designed and fabricated prototypes of AC-coupled LGAD sensors. The performance of small test structures with different particle beams from radioactive sources are shown.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Characterization of an architecture for front-end pixel binning in an integrating pixel array detector

Optimization of an area detector involves compromises between various parameters like frame rate, read noise, dynamic range and pixel size. We have implemented and tested a novel front-end binning design in a photon-integrating hybrid pixel array detector using the MM-PAD- 2.0 pixel architecture. In this architecture, the pixels can be optionally binned in a 2 x 2 pixel configuration using a network of switches to selectively direct the output of 4 sensor pixels to a single amplifier input. Doing this allows a trade-off between frame rate and spatial resolution. Tests show that the binned pixels perform well, but with some degradation on performance as compared to an un-binned pixel. The increased parasitic input capacitance does reduce the signal collected per x-ray as well as increases the noise of the pixel. Here, the increase in noise is, however, less than the factor of 2 increase one would observe for binning in post-processing. Spatial scans across the binned pixels show that no measured signal intensity is lost at the inner binning unit boundaries. In the high flux regime, at a 2 x 2 pixel wide beam spot (FWHM) size, binned mode responds linearly up to a photon flux of 10 7 x-rays/s, and performs comparably with un-binned mode up to a photon flux of 10 8 x-rays/s. While this study demonstrates a proof of concept for front-end binning in integrating detectors, we also identify changes to this early-stage prototype which can further improve the performance of binning pixel structures.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Characterization of the CMS Endcap Timing Layer readout chip prototype with charge injection

We present the characterization of a readout Application-Specific Integrated Circuit (ASIC) for the CMS Endcap Timing Layer (ETL) of the High-Luminosity LHC upgrade with charge injection. The ASIC, named ETROC and developed in a 65 nm CMOS technology, reads out a 16× 16 pixel matrix of the Low-Gain Avalanche Detector (LGAD). The jitter contribution from ETROC is required to be below 40 ps to achieve the 50 ps overall time resolution per hit. The analog readout circuits in ETROC consist of the preamplifier and the discriminator. The preamplifier handles the LGAD charge signal with the most probable value of around 15 fC. The discriminator generates the digital pulse, which provides the Time-Of-Arrival (TOA, leading edge) and Time-Over-Threshold (TOT, pulse width) information. The prototype of ETROC (ETROC0) that implements a single channel of analog readout circuits has been evaluated with charge injection. The jitter of the analog readout circuits, measured from the discriminator's leading edge, is better than 16 ps for a charge larger than 15 fC with the sensor capacitance. The time walk resulting from different pulse heights can be corrected using the TOT measurement. The time resolution distribution has a standard deviation of 29 ps after the time-walk correction from the charge injection. At room temperature, the preamplifier's power consumption is measured to be 0.74 mW and 1.53 mW per pixel in the low- and high-power mode, respectively. Finally, the measured power consumption of the discriminator is 0.84 mW per pixel. With the ASIC alone or the LGAD sensor, The characterization performances fulfill the ETL's challenging requirements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

High rate studies of the ATLAS sTGC detector and optimization of the filter circuit on the input of the front-end amplifier

Abstract The Large Hadron Collider (LHC) at CERN is expected to be upgraded to the High-Luminosity LHC (HL-LHC) by 2029 and achieve instantaneous luminosity around 5–7.5 × 10 34 cm -2 s -1 . This represents a more than 3–4 fold increase in the instantaneous luminosity compared to what has been achieved in Run 2. The New Small Wheel (NSW) upgrade is designed to be able to operate efficiently in this high background rate environment. In this article, we summarize multiple performance studies of the small-strip Thin Gap Chamber (sTGC) at high rate using nearly final front-end electronics. We demonstrate that the efficiency versus rate distribution can be well described by an exponential decay with electronics dead-time being the primary cause of loss of efficiency at high rate. We then demonstrate several methods that can decrease the electronics dead-time and therefore minimize efficiency loss. One such method is to install either a pi-network input filter or pull-up resistor to minimize the charge input into the amplifier. We optimized the pi-network capacitance and pull-up resistor resistance using the results from our measurements. The results shown here were not only critical to finalizing the components on the front-end board, but also are critical for setting the optimal operating parameters of the sTGC detector and electronics in the ATLAS cavern.

Instruments & Instrumentation↗
DOE OSTI2024

Spot-based measurement of the brighter-fatter effect on a Roman Space Telescope H4RG detector and comparison with flat-field data

Here, we present the measurement and characterization of the brighter-fatter effect (BFE) on a NASA Roman Space Telescope development Teledyne H4RG-10 near-infrared detector using laboratory measurements with projected point sources. After correcting for other interpixel non-linearity effects such as classical non-linearity and inter-pixel capacitance, we quantify the magnitude of the BFE by calculating the fractional area change per electron of charge contrast. We also introduce a mathematical framework to compare our results with the BFE measured on similar devices using autocorrelations from flat-field images. We find an agreement of 18 ± 5% between the two methods. We identify potential sources of discrepancy and discuss future investigations to characterize and address them.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

A method to observe field-region oxide charge and inter-electrode isolation from CV-characteristics of n-on-p devices

Abstract N-on-psilicon sensors will be utilized in the Compact Muon Solenoid (CMS) detector's tracker and High Granularity Calorimeter (HGCAL) in the High Luminosity upgrade of the Large Hadron Collider (HL-LHC). Among their several advantages in terms of radiation hardness over the traditionalp-on-nsensors in the extreme radiation environment of the HL-LHC are electron collection instead of holes and overlapping maxima of weighting and electric fields at the charge-collecting electrodes. The disadvantage of the multi-channel SiO 2 -passivatedn-on-psensors is the generation of an inversion layer under the Si/SiO 2 -interface by a positive interface-oxide-charge (N ox ) that at high densities can compromise the position resolution by creating a conduction channel between the electrodes. This issue is typically addressed by including additional isolnts (p-stp,p-spray) between n + -electrodes. Focusing on the guard-ring regions ofn-on-psensors where no isolation implants are applied between the electrodes, a capacitance-voltage (CV) characterization study of both 6-inch wafer test diodes and 8-inch HGCAL prototype and pre-series sensors showed a distinct threshold voltage (V th,iso ) in theCV-characteristics of a biased n + -electrode when its enclosing guard-ring was left floating. When reproduced by simulations, the measuredV th,iso was found to contain information on the field-regionN ox and indicate the threshold where the two electrodes become electrically isolated by the influence of the reverse bias voltage. Together with previous studies on the inter-electrode isolation of irradiatedn-on-psensors, the results indicate that position sensitiven-on-psensors without isolation implants may be feasible in future HEP experiments.

Instruments & Instrumentation↗
DOE OSTI2024

Characterizing novel Indium Phosphide pad detectors with focused X-ray beams and laboratory tests

Future tracking systems in High Energy Physics experiments will require large instrumented areas with low radiation length. Crystalline silicon sensors have been used in tracking systems for decades, but are difficult to manufacture and costly to produce for large areas. We are exploring alternative sensor materials that are amenable to fast fabrication techniques used for thin film devices. Indium Phosphide pad sensors were fabricated at Argonne National Lab using commercially available InP:Fe 2-inch mono-crystal substrates. Current-voltage and capacitance-voltage characterizations were performed to study the basic operating characteristics of a group of sensors. Micro-focused X-ray beams at Canadian Light Source and Diamond Light Source were used to study the response to ionizing radiation, and characterize the uniformity of the response for several devices. Electrical test results showed a high degree of performance uniformity between the 48 tested devices. X-ray test beam results showed good performance uniformity within tested devices after accounting for spatially-local defects and edge fields. As a result, this motivates further studies into thin film devices for future tracking detectors.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Impact of proton irradiation on 4H-SiC Low Gain Avalanche Detectors (LGADs)

Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and complementary PiN diodes were irradiated with 2.5 GeV protons at fluences up to 3.33 × 10 14 p/cm 2 . The electrostatic performance of both irradiated and non-irradiated devices was evaluated using I-V and C-V measurements. Moreover, charge collection measurements using α particles were also conducted. SiC LGADs displayed a loss in rectification, high ON-state resistances >10 10 Ω-cm 2 , and the complete removal of gain when exposed to the highest proton fluence. Additionally, the reductions in capacitance and OFF-state current pointed to compensation of the gain layer as a gain reducing mechanism. The introduction of radiation-induced defects also hinders carrier acceleration, which reduces impact ionization and further gain reduction. LGADs exposed to a fluence of 1 × 10 14 p/cm 2 experienced a partial recovery in gain (originally having a value of ∼ 2) with a value of ∼ 1.65 when applying a bias of 500 V. Charge trapping was also seen in the reduction of charge collection efficiency (CCE) to ∼ 65% for the PiN diode. However, despite the reduction in device performance, the demonstration of a measurable signal after irradiation points to the potential of SiC LGAD detectors for future high energy physics applications.

43 PARTICLE ACCELERATORS↗
DOE OSTI2026

Large-scale real-time signal processing in physics experiments: the ALICE TPC FPGA pipeline

For LHC Run 3, the ALICE Time Projection Chamber was upgraded to operate in continuous readout mode. Interaction rates of up to 50 kHz in Pb-Pb collisions require real-time processing of more than 3 TB s -1 of raw detector data. This requirement is met by a custom FPGA-based processing pipeline that performs the complete front-end data treatment fully in-stream, including common-mode correction, pedestal subtraction, ion-tail filtering, zero suppression, and dense data packing. A central element of the design is a highly parallel common-mode correction algorithm operating directly on the streaming data. It robustly identifies signal-free readout channels on a time-bin basis and applies pad-dependent scaling to compensate for local variations in capacitive coupling in the GEM readout. In combination with pedestal subtraction and ion-tail filtering, this enables accurate baseline restoration under extreme high-occupancy conditions, preventing signal loss while efficiently suppressing noise prior to zero suppression. The pipeline operates continuously at the full detector bandwidth and reduces the raw input rate of approximately 3 TB s -1 to about 900 GBps for Pb-Pb collisions at the target interaction rate. Overall, it represents a large-scale FPGA-based real-time signal-processing implementation for high-energy physics detector readout.

Digital signal processing (DSP)↗
DOE OSTI2023

Maximizing ion dynamics and electrochemical performance of ionic liquid-acetonitrile electrolyte in Ti 3 C 2 T x MXene

Modification of the structure and morphology of MXene electrodes and the formulation of the electrolytes used in their supercapacitor configurations are significant factors affecting the performance of electrochemical devices. In this study, we investigated the electrochemical performance and ion dynamics of 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, [EmimTFSI], ionic liquid in the presence of acetonitrile (ACN) at different concentrations in Ti 3 C 2 T x MXene supercapacitor. We found an optimum concentration of ACN, at which more cations from the ionic liquid attach to the MXene electrode surface, providing higher electrochemical performance. This higher capacitance is also associated with increased microscopic dynamics of the cation away from the pore wall. These findings give a guideline to optimize the performance of MXene-based supercapacitors using organic solvents-ionic liquid-based electrolyte systems.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Probing enhanced lithium-ion transport kinetics in 2D holey nanoarchitectured electrodes

Nanostructuring has been proved effective towards improving many energy storage and conversion devices, and is feasible for a wide range of materials. In particular, secondary nanoarchitectured materials exhibit collective advantages compared with nano-sized primary building blocks. Despite the manifold efforts in designed nanoarchitectures and synthetic routes, the underlying ion diffusion kinetics and phase transformation behaviours within nanoarchitectures still remain less explored. Herein, we probed enhanced lithium-ion transport behaviours using 2D holey zinc ferrite (ZFO) nanosheets as a model material, to demonstrate how self-assembled 2D holey nanoarchitectured electrodes can feature efficient ion diffusion channels, robust yet continuous electron transfer framework, and enlarged surface area, contributing to the superior performance over the ZFO nanoparticles without secondary structures. By revealing kinetic parameters through combined spectroscopic measurements and electrochemical techniques, our study manifests increased lithium-ion diffusion coefficients, higher capacitive charge storage contribution and reduced charge transfer impedance in holey nanosheets compared to randomly aggregated nanoparticles. Furthermore, our results promote deeper understanding of significantly enhanced electrochemical energy storage properties of these 2D holey nanoarchitectured electrodes resulted from more uniform and complete phase transformation and better active material utilization.

25 ENERGY STORAGE↗
DOE OSTI2026

Resilience of High-Efficiency CdSeTe:As and CdSeTe:Cu Solar Cells to Proton Irradiation

Power generation in space is currently dominated by expensive III-V multi-junction photovoltaic (PV) devices and cheap crystalline silicon (c-Si) PV devices. Both of these technologies degrade rapidly in proton-radiation-rich space environments, such as the Van Allen belt. The present study of cadmium selenide telluride- (CdSeTe-) based PV devices exposed to 150-to-1500 keV proton irradiation with fluences up to 9 x 1013 cm-2 reveal a more radiation-hard alternative to III-V and c-Si PV technologies. We report on measurement and analysis of current density vs voltage (JV), external quantum efficiency (EQE), external radiative efficiency, and capacitance vs voltage (CV) characteristics. JV characteristics of As-doped CdSeTe devices show 80% remaining power conversion efficiency (PCE) relative to unexposed controls when exposed to 650 keV protons at a fluence of 1012 cm-2. Under these same irradiation conditions, Cu-doped CdSeTe devices demonstrate an even better 95% PCE retention compared with unirradiated control devices. Evidence of radiation-induced absorber p-type doping compensation is observed in the glass-side EQE at 0 V and CV characteristics of most of the irradiated CdSeTe:As devices, but clear compensation is evident only for the most heavily irradiated CdSeTe:Cu devices. Elevated blue-green photocurrent in the film-side 0 V EQE suggests a buried junction in the most heavily irradiated CdSeTe:As devices. Although CdSeTe:Cu devices are the more resilient of the CdSeTe structures, both CdSeTe-based technologies are radiation-hard when compared to c-Si and III-V multi-junction PV.

14 SOLAR ENERGY↗
DOE OSTI2020

On negative induced polarization in frequency domain measurements

SUMMARY Induced polarization (IP) has been widely used to non-invasively characterize electrical conduction and polarization in the subsurface resulting from an applied electric field. Earth materials exhibit a lossy capacitance defined by a negative intrinsic phase in frequency-domain IP (FDIP) or a positive intrinsic chargeability in time-domain IP (TDIP). However, error-free positive apparent phase or negative apparent chargeability (i.e. negative IP effects) can occur in IP measurements over heterogeneous media. While negative IP effects in TDIP data sets have been discussed, no studies have addressed this topic in detail for FDIP measurements. We describe theory and numerical modelling to explain the origin of negative IP effects in FDIP measurements. A positive apparent phase may occur when a relatively high polarizability feature falls into negative sensitivity zones of complex resistivity measurements. The polarity of the apparent phase is determined by the distribution of subsurface intrinsic phase and resistivity, with the resistivity impacting the apparent phase polarity via its control on the sensitivity distribution. A physical explanation for the occurrence of positive apparent phase data is provided by an electric circuit model representing a four-electrode measurement. We also show that the apparent phase polarity will be frequency dependent when resistivity changes significantly with frequency (i.e. in the presence of significant IP effects). Consequently, negative IP effects manifest themselves in the shape of apparent phase spectra recorded with multifrequency (spectral IP) data sets. Our results imply that positive apparent phase measurements should be anticipated and should be retained during inversion and interpretation of single frequency and spectral IP data sets.

Geochemistry & Geophysics↗