Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy
Low-temperature X-ray photoemission electron microscopy (X-PEEM) is used to measure the electric potential at domain walls in improper ferroelectric Er 0.99 Ca 0.01 MnO 3 . Here, by combining X-PEEM with scanning probe microscopy and theory, we develop a model that relates the detected X-PEEM contrast to the emergence of uncompensated bound charges, explaining the image formation based on intrinsic electronic domain-wall properties. In contrast to previously applied low-temperature electrostatic force microscopy (EFM), X-PEEM readily distinguishes between positive and negative bound charges at domain walls. Finally, our study introduces an X-PEEM-based approach for low-temperature electrostatic potential mapping, facilitating nanoscale spatial resolution and data acquisition times on the order of 0.1-1 s.