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At least 1,531 records · Page 85

Linking electronic structure calculations to generalized stacking fault energies in multicomponent alloys

Abstract The generalized stacking fault energy is a key ingredient to mesoscale models of dislocations. Here we develop an approach to quantify the dependence of generalized stacking fault energies on the degree of chemical disorder in multicomponent alloys. We introduce the notion of a “configurationally-resolved planar fault” (CRPF) energy and extend the cluster expansion method from alloy theory to express the CRPF as a function of chemical occupation variables of sites surrounding the fault. We apply the approach to explore the composition and temperature dependence of the unstable stacking fault energy (USF) in binary Mo–Nb alloys. First-principles calculations are used to parameterize a formation energy and CRPF cluster expansion. Monte Carlo simulations show that the distribution of USF energies is significantly affected by chemical composition and temperature. The formalism is broadly applicable to arbitrary crystal structures and alloy chemistries and will enable the development of rigorous models for deformation mechanisms in high-entropy alloys.

Natarajan, Anirudh Raju (ORCID:0000000202529480)↗

Achieving high tensile strength and ductility in refractory alloys by tuning electronic structure

The energy efficiency of heat engines (gas and steam turbines) for electricity production and propulsion is determined by the Carnot cycle and scales with operating temperature. Commercial nickel- and cobalt-based superalloys melt near 1,500 °C and rapidly lose mechanical strength beyond 1,000 °C. Refractory metals melt well above 2,000 °C but have inherent manufacturability challenges that are barriers to adoption, such as high ductile-to-brittle transition temperatures. Using density functional theory-guided design, we demonstrate tailored local lattice distortions that promote phase-stable, non-equiatomic refractory concentrated solid solutions with both high ductility and strength. Here, we exemplify this for single-phase, body-centred cubic Nb 4 Ta 4 V 3 Ti that exhibits castability, excellent room-temperature tensile yield strength (∼1 GPa) and ductility (approaching 20% uniform strain), and exceptional high-temperature tensile strength (500 MPa at 1,000 °C). These findings illustrate a path for designing materials that hold great potential for advancing next-generation technologies such as Generation IV fission reactors, first-generation fusion-plasma reactors, and more efficient gas turbines for electricity generation and propulsion.

DFT↗

Thermodynamics and electronic structure of adsorbed and intercalated plumbene in graphene/hexagonal SiC heterostructures

Abstract Graphene-covered hexagonal SiC substrates have been frequently discussed to be appropriate starting points for epitaxial overlayers of Xenes, such as plumbene, or even their deposition as intercalates between graphene and SiC. Here, we investigate, within density functional theory, the plumbene deposition for various layer orderings and substrate terminations. By means of total energy studies we demonstrate the favorization of the intercalation versus the epitaxy for both C-terminated and Si-terminated 4H-SiC substrates. These results are explained in terms of chemical bonding and by means of layer-resolved projected band structures. Our results are compared with available experimental findings.

Science & Technology - Other Topics↗

Tuning the Electronic Structure of Anatase Through Fluorination

A highly fluorinated anatase lattice has been recently reported, providing a new class of materials whose general chemical formula is T i1-x $\square$ x X 4x O 2-4x (X - = F - or OH - ). To characterise the complex structural features of the material and the different F environments, we here apply a computational screening procedure. After deriving a polarisable force—field from DFT simulations, we screen in a step-wise fashion a large number of possible configurations differing in the positioning of the titanium vacancies ($\square$) and of the fluorine atoms. At each step only 10% of the configurations are retained. At the end of the screening procedure, a configuration is selected and simulated using DFT-based molecular dynamics. This allows us to analyse the atomic structure of the material, which is strongly disordered, leading to a strong decrease (by 0.8 eV) of the band gap compared to conventional anatase.

Science & Technology - Other Topics↗