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At least 1,549 records · Page 86

Functional soft materials and methods of making and using thereof

Disclosed are functional materials for use in additive manufacturing (AM). The functional material can comprise an elastomeric composition (e.g., a silicone composite) for use in, for example, direct ink writing. The elastomeric composition can include an elastomeric resin, and a magnetic nanorod filler dispersed within the elastomeric resin. Nanorod characteristics (e.g., length, diameter, aspect ratio) can be selected to create 3D-printed constructs with desired mechanical properties along different axes. Furthermore, since nickel nanorods are ferromagnetic, the spatial distribution and orientation of nanorods within the continuous phase can be controlled with an external magnetic field. This level of control over the nanostructure of the material system offers another degree of freedom in the design of functional parts and components with anisotropic properties. Magnetic fields can be used to remotely sense compression of the constructs, or alternatively, control the stiffness of these materials.

Berkland, Cory↗

Structural, magnetic and optical properties of ZnO nanostructures converted from ZnS nanoparticles

Graphical abstract: The phase conversion of ZnS to highly crystalline hexagonal ZnO was done by heat treatment. - Highlights: • Phase change of cubic ZnS to hexagonal ZnO via heat treatment. • Band gap was found to decrease with increasing calcinations temperature. • ZnO samples have higher magnetic moment than ZnS. • Blocking Temperature of the samples is well above room temperature. • Maximum negative%MR with saturation value ∼38% was found for sample calcined at 600° C. - Abstract: The present work concentrates on the synthesis of cubic ZnS and hexagonal ZnO semiconducting nanoparticle from same precursor via co-precipitation method. The phase conversion of ZnS to highly crystalline hexagonal ZnO was done by heat treatment. From the analysis of influence of calcination temperature on the structural, optical and vibrational properties of the samples, an optimum temperature was found for the total conversion of ZnS nanoparticles to ZnO. Role of quantum confinement due to finite size is evident from the blue shift of the fundamental absorption in UV–vis spectra only in the ZnS nanoparticles. The semiconducting nature of the prepared samples is confirmed from the UV–vis, PL study and transport study. From the magnetic and transport studies, pure ZnO phase was found to be more prone to magnetic field.

36 MATERIALS SCIENCE↗

Thermal ionization induced metal-semiconductor transition and room temperature ferromagnetism in trivalent doped ZnO codoped with lithium

Thermal ionization induced metallic to semiconductor (MST) transition occurring at 460 K for Zn{sub 0.97}Al{sub 0.03}O, 463 K for Zn{sub 0.94}Al{sub 0.03}Li{sub 0.03}O, and 503 K for Zn{sub 0.91}Al{sub 0.03}Li{sub 0.03}Mn{sub 0.03}O has been found in the sol-gel synthesized (using hexamethylenetetramine), trivalent doped (Al, Mn) ZnO codoped with lithium. Increase in the thermally ionized carrier concentration due to Al doping is responsible for near band edge (NBE) peak shift causing Fermi level to move into conduction band making it metallic consistent with resistivity results. Free carrier (thermally activated) neutralization with ionized donor is responsible for semiconducting nature, which is supported from the free carrier screening produced energy shift in the NBE of photoluminescence peak. Furthermore, independently band gap shrinkage is also obtained from UV-Visible studies confirming localization induced MST. An anti-correlation is found between defect density (DLE) and room temperature ferromagnetism (RTFM) indicating intrinsic defects are not directly responsible for RTFM.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetization-free measurements of spin orientations in orthoferrites using terahertz time domain spectroscopy

The spin orientation during spin reorientation phase transition in a weak ferromagnetic orthoferrite Dy{sub x}Er{sub 1−x}FeO{sub 3} (x = 0.7) has been studied by using terahertz time domain spectroscopy under zero and weak external magnetic fields. The spin orientation angle was deduced from the ratio of the absorption intensity of quasi-ferromagnetic and quasi-antiferromagnetic modes, which appear around 0.25 and 0.4 THz, respectively. Between 11.4 and 17.9 K, this material showed a rotation-type reorientation transition rather than Morin-type transition. The temperature and magnetic field dependence of the orientation angle of the magnetic moment was found to follow a simple model assuming a linear temperature dependence of the anisotropy parameter. It has been also shown that this method is insensitive to the domain structure with opposite polarity and that it allows measurement without macroscopic magnetization.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Spin–orbit coupling proximity effect in MoS 2 /Fe 3 GeTe 2 heterostructures

Layered two-dimensional (2D) magnet/semiconductor heterostructures combine spintronic and optoelectronic properties of constituent materials, leading to new magneto-optical and magnetoelectric phenomena such as spontaneous emission of helical light and enhanced Zeeman splitting in single photon emission. While prior focus was mostly on the magnetic proximity effect, where properties of 2D magnets are transferred to nonmagnetic 2D materials, the inverse effect of 2D semiconductors altering 2D magnets is much less understood. Here, we fabricated and studied van der Waals (vdW) heterostructures of 2D magnet Fe 3 GeTe 2 (FGT) and 2D semiconductor MoS 2 . With reflectance magnetic circular dichroism, we found that the coercive field of MoS 2 -covered FGT reduces compared with uncovered FGT, agreeing well with our first-principles calculations. With its strong spin–orbit coupling (SOC), MoS 2 effectively alters the crystal field of the adjacent FGT and its magnetic anisotropy. Furthermore, an unconventional two-step hysteresis loop emerges in MoS 2 /FGT as a result of the superposition of two regions of FGT: at the interface and away from the interface. Our experimental elucidation of the SOC proximity effect that MoS 2 exerts on FGT provides fundamental understanding for the rational development of 2D magnet/semiconductor heterostructures.

2D materials↗

Satellites, core hole excitations, and spin-resolved electronic structure in the spectroscopy of half-metallic CrO 2

Photoelectron satellites—the structures appearing on the low kinetic or high binding-energy side of the “main” or “elastic” photopeak—betray the complex many-body interactions set in motion by the sudden creation of the core hole. In this work, we demonstrate, using the technologically important ferromagnetic half-metal CrO 2 , how such satellites can manifest themselves in other core-level spectroscopies of the material and how they can reveal important details pertinent to its electronic structure. Specifically, we identify a fluorescence satellite in the Cr 𝐿 3 resonant x-ray-emission spectra that radiates at a constant emission energy across the Cr 𝐿 3 x-ray edge with energy ≈1.3 eV above the ordinary valence fluorescence. Here, we provide evidence that this feature arises from the valence recombination of the Cr 2⁢𝑝 core hole “dressed” by the same shakeup charge-transfer process present in both the Cr x-ray photoelectron and the Cr x-ray absorption spectra with its energy uniquely measuring the exchange splitting of the Cr 3⁢𝑑 level. Further analysis of the x-ray emission data reveals three additional features that radiate at constant loss energy that are attributed to combinations of Cr 3⁢𝑑⁢(𝑡 2⁢𝑔 ) → Cr 3⁢𝑑⁢(𝑡 2⁢𝑔 ), charge-transfer O 2⁢𝑝→Cr 3⁢𝑑, and crystal-field Cr⁢ 3⁢𝑑⁡(𝑡 2⁢𝑔 )→Cr⁢ 3⁢𝑑⁡(𝑒 𝑔 ) excitations. These assignments and their energies are supported by density-functional theory calculations, the accuracy of which we demonstrate by hard x-ray valence-photoemission measurements. Atomic multiplet calculations, which include crystal-field effects, help interpret x-ray photoelectron and x-ray absorption spectra of the covalently mixed Cr ion. Resonant Cr K-𝐿 2,3 ⁢𝐿 2,3 Auger-electron emission spectra support a ligand-to-metal nature of the charge-transfer process while highlighting the charge sensitivity differences between photon-in/electron-out and photon-in/photon-out spectroscopies.

36 MATERIALS SCIENCE↗

Unidirectional multipulse helicity-independent all-optical switching in [Ni/Pt] based synthetic ferrimagnets

Nickel-platinum-based synthetic ferrimagnets (SFi's) are highly tunable and rare-earth-free materials that allow ultrafast all optical control of magnetism to be explored. This study considers a SFi composed of a ferromagnetic [Ni/Pt] multilayer and a ferromagnetic Co layer, separated by an Ir layer that mediates an antiferromagnetic coupling. Helicity-independent all optical switching (HI-AOS) between two antiparallel magnetization states is observed. AOS may be realized at increased temperature through reduction of the thickness of the Pt layers. Switching is unidirectional and has a strong dependence on the applied magnetic field history, which suggests the possible presence of a nanoscale magnetic texture that may be important in controlling AOS in SFi systems. Published by the American Physical Society 2024

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Highly anisotropic exchange interactions of j eff = 1 2 iridium moments on the fcc lattice in La 2 B IrO 6 ( B = Mg , Zn )

Here we have performed inelastic neutron scattering (INS) experiments to investigate the magnetic excitations in the weakly distorted face-centered-cubic (fcc) iridate double perovskites La$_2$ZnIrO$_6$ and La$_2$MgIrO$_6$, which are characterized by A-type antiferromagnetic ground states. The powder inelastic neutron scattering data on these geometrically frustrated $j_{\rm eff}=1/2$ Mott insulators provide clear evidence for gapped spin wave excitations with very weak dispersion. The INS results and thermodynamic data on these materials can be reproduced by conventional Heisenberg-Ising models with significant uniaxial Ising anisotropy and sizeable second-neighbor ferromagnetic interactions. Such a uniaxial Ising exchange interaction is symmetry-forbidden on the ideal fcc lattice, so that it can only arise from the weak crystal distortions away from the ideal fcc limit. This may suggest that even weak distortions in $j_{\rm eff}=1/2$ Mott insulators might lead to strong exchange anisotropies. More tantalizingly, however, we find an alternative viable explanation of the INS results in terms of spin models with a dominant Kitaev interaction. In contrast to the uniaxial Ising exchange, the highly-directional Kitaev interaction is a type of exchange anisotropy which is symmetry-allowed even on the ideal fcc lattice. The Kitaev model has a magnon gap induced by quantum order-by-disorder, while weak anisotropies of the Kitaev couplings generated by the symmetry-lowering due to lattice distortions can pin the order and enhance the magnon gap. In conclusion, our findings highlight how even conventional magnetic orders in heavy transition metal oxides may be driven by highly-directional exchange interactions rooted in strong spin-orbit coupling.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

B a 2 NiOs O 6 : A Dirac-Mott insulator with ferromagnetism near 100 K

In this study, the ferromagnetic semiconductor Ba 2 NiOsO 6 ( T mag ~ 100 K ) was synthesized at 6 GPa and 1500 °C. It crystallizes into a double perovskite structure [Fm - 3m ; a = 8.0428 ( 1 ) Å], where the Ni 2+ and Os 6+ ions are perfectly ordered at the perovskite B site. We show that the spin-orbit coupling of Os 6+ plays an essential role in opening the charge gap. The magnetic state was investigated by density functional theory calculations and powder neutron diffraction. The latter revealed a collinear ferromagnetic order in a > 21 kOe magnetic field at 5 K. The ferromagnetic gapped state is fundamentally different from that of known dilute magnetic semiconductors such as (Ga,Mn)As and (Cd,Mn)Te ( T mag < 180 K ), the spin-gapless semiconductor Mn 2 CoAl ( T mag ~ 720 K ), and the ferromagnetic insulators EuO ( T mag ~ 70 K ) and Bi 3 Cr 3 O 11 ( T mag ~ 220 K ). It is also qualitatively different from known ferrimagnetic insulators and semiconductors, which are characterized by an antiparallel spin arrangement. Our finding of the ferromagnetic semiconductivity of Ba 2 NiOsO 6 should increase interest in the platinum group oxides, because this alternative class of materials should be useful in the development of spintronic, quantum magnetic, and related devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Excitations and magnetization density distribution in the dilute ferromagnetic semiconductor Yb 14 MnSb 11

One rare example of a Kondo lattice compound with ferromagnetic dominated RKKY interactions is Yb$_{14}$MnSb$_{11}$. As a ferromagnetic semiconductor with $T_c \approx 53$~K, it is also a potential compound for exploration of spintronic devices. This material is furthermore one of the most efficient high temperature thermoelectrics. We describe measurements which answer remaining questions regarding the energy scales of the exchange interactions, the valence and the magnetization density distribution in this system. We also find that the system consists of RKKY exchange coupled Mn$^{2+}$ sites with nearest and next nearest exchange interactions dominating the magnetic spectrum with no significant magnetization density localized on other atomic sites. The extended spread of a negative magnetization around each of the Mn ions supports a Kondo screening cloud scenario for Yb$_{14}$MnSb$_{11}$.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Interlayer magnetism in Fe 3-x GeTe 2

Fe 3 - x GeTe 2 is a layered van der Waals magnetic material with a relatively high ordering temperature and large anisotropy. While most studies have concluded the interlayer ordering to be ferromagnetic, there have also been reports of interlayer antiferromagnetism in Fe 3 - x GeTe 2 . In this work, we investigate the interlayer magnetic ordering by neutron diffraction experiments, scanning tunneling microscopy (STM) and spin-polarized STM measurements, density functional theory plus U calculations, and STM simulations. We conclude that the layers of Fe 3 - x GeTe 2 are coupled ferromagnetically and that in order to capture the magnetic and electronic properties of Fe 3 - x GeTe 2 within density functional theory, Hubbard U corrections need to be taken into account.

2-dimensional systems↗

Ferromagnetic resonance in a system of magnetic films with different Curie temperatures

The peculiarities of absorption of rf electromagnetic radiation (ferromagnetic resonance) in multilayer NiFe/Ni{sub 0.65}Cu{sub 0.35}(d)/CoFe structures in a wide temperature range are analyzed. It is shown that the type of interaction of the NiFe and CoFe ferromagnetic films via a “weak” ferromagnetic Ni{sub 0.65}Cu{sub 0.35} interlayer changes from antiferromagnetic to ferromagnetic upon cooling and a decrease in interlayer thickness d. The detected temperature dependence of the interlayer interaction indicates the possibility of observation of a strong magnetocaloric effect in the structures under investigation.

36 MATERIALS SCIENCE↗

Spectral ellipsometry as a method for characterization of nanosized films with ferromagnetic layers

Nanosized films with ferromagnetic layers are widely used in nanoelectronics, sensor systems and telecommunications. Their properties may strongly differ from those of bulk materials that is on account of interfaces, intermediate layers and diffusion. In the present work, spectral ellipsometry and magnetooptical methods are adapted for characterization of the optical parameters and magnetization processes in two- and three-layer Cr/NiFe, Al/NiFe and Cr(Al)/Ge/NiFe films onto a sitall substrate for various thicknesses of Cr and Al layers. At a layer thickness below 20 nm, the complex refractive coefficients depend pronouncedly on the thickness. In two-layer films, remagnetization changes weakly over a thickness of the top layer, but the coercive force in three-layer films increases by more than twice upon remagnetization, while increasing the top layer thickness from 4 to 20 nm.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Relevance of the Preparation of the Target for PLD on the Magnetic Properties of Films of Iron-Doped Indium Oxide

This paper concerns the importance of the preparation of the targets that may be used for pulsed laser deposition of iron-doped indium oxide films. Targets with a fixed concentration of iron are fabricated from indium oxide and iron metal or one of the oxides of iron, FeO, Fe3O4 and Fe2O3. Films from each target were ablated onto sapphire substrates at the same temperature under different oxygen pressures such that the thickness of the films was kept approximately constant. The films were studied using X-ray diffraction, X-ray absorption (both XANES and EXAFS), optical absorption and magnetic circular dichroism. The magnetic properties were measured with a SQUID magnetometer. At the lowest oxygen pressure, there was evidence that some of the iron ions in the films were in the state Fe2+, rather than Fe3+, and there was also a little metallic iron; these properties were accompanied by a substantial magnetisation. As the amount of the oxygen was increased, the number of defect phases and the saturation magnetisation was reduced and the band gap increased. In each case, we found that the amount of the oxygen that had been included in the target from the precursor added to the effect of adding oxygen in the deposition chamber. It was concluded that the amount of oxygen in the target due to the precursor was an important consideration but not a defining factor in the quality of the films.

(InFe)2O3↗

Surface Electronic Structure of Cr Doped Bi 2 Se 3 Single Crystals

Here, by using angle-resolved photoemission spectroscopy, we showed that Bi 2-x Cr x Se 3 single crystals have a distinctly well-defined band structure with a large bulk band gap and undistorted topological surface states. These spectral features are unlike their thin film forms in which a large nonmagnetic gap with a distorted band structure was reported. We further provide laser-based high resolution photoemission data which reveal a Dirac point gap even in the pristine sample. The gap becomes more pronounced with Cr doping into the bulk of Bi 2 Se 3 . These observations show that the Dirac point can be modified by the magnetic impurities as well as the light source.

36 MATERIALS SCIENCE↗

Optical fingerprints of the electronic band reconstruction in van der Waals magnetic materials

We report a broadband study of the charge dynamics in the van der Waals magnetic materials 2H-M x TaS 2 (M = Mn and Co), which span the onset of both long-range antiferromagnetic (AFM) and ferromagnetic (FM) order, depending on the intercalation M and its concentration x. We discover a spectral weight (SW) shift from high to low energy scales for FM compositions, while reversely SW is removed from low towards high spectral energies for AFM compounds. This maps the related reconstruction of the electronic band structure along the crossover from the FM to AFM order, which restores an occupation balance in the density of states between spin majority and minority bands of the intercalated 3d elements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spin-optoelectronic devices based on hybrid organic-inorganic trihalide perovskites

Recently the hybrid organic-inorganic trihalide perovskites have shown remarkable performance as active layers in photovoltaic and other optoelectronic devices. However, their spin characteristic properties have not been fully studied, although due to the relatively large spin-orbit coupling these materials may show great promise for spintronic applications. Here we demonstrate spin-polarized carrier injection into methylammonium lead bromide films from metallic ferromagnetic electrodes in two spintronic-based devices: a ‘spin light emitting diode’ that results in circularly polarized electroluminescence emission; and a ‘vertical spin valve’ that shows giant magnetoresistance. In addition, we also apply a magnetic field perpendicular to the injected spins orientation for measuring the ‘Hanle effect’, from which we obtain a relatively long spin lifetime for the electrically injected carriers. Our measurements initiate the field of hybrid perovskites spin-related optoelectronic applications.

36 MATERIALS SCIENCE↗