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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Near-surface daytime thermal conductivity in the lunar regolith

If mass and heat transport properties in the top few cm of the lunar surface correspond, estimates of the daytime thermal conductivity based on the diffusivity calculated from in situ concentration gradients of low temperature volatile elements should be possible. Concentration gradients of Hg and Br in response to the diurnal heat pulse have been measured in samples from cores. The conductivity estimated is either approximately 10 to the -3rd or approximately 2 x 10 to the -4th W/cm-degrees K depending on the assumptions made. The latter value is in agreement with near-surface daytime thermal properties calculated by Keihm et al. (1973) to explain the mean surface temperature. An activation energy for diffusion of Hg in the top few cm of the lunar surface is estimated to be approximately 8 kcal/mole and suggests either vapor or surface migration. Fixation of the concentration gradient after the cores were extracted may be due to lack of a temperature gradient to act as a driving force or to disruption of grain contacts or their corrosion on exposure to air.

Reed, G. W., Jr.↗
DOE OSTI2012

IMPACT OF TEMPERATURE-DEPENDENT RESISTIVITY AND THERMAL CONDUCTION ON PLASMOID INSTABILITIES IN CURRENT SHEETS IN THE SOLAR CORONA

In this paper, we investigate, by means of two-dimensional magnetohydrodynamic simulations, the impact of temperature-dependent resistivity and thermal conduction on the development of plasmoid instabilities in reconnecting current sheets in the solar corona. We find that the plasma temperature in the current-sheet region increases with time and it becomes greater than that in the inflow region. As secondary magnetic islands appear, the highest temperature is not always found at the reconnection X-points, but also inside the secondary islands. One of the effects of anisotropic thermal conduction is to decrease the temperature of the reconnecting X-points and transfer the heat into the O-points, the plasmoids, where it gets trapped. In the cases with temperature-dependent magnetic diffusivity, {eta} {approx} T {sup -3/2}, the decrease in plasma temperature at the X-points leads to (1) an increase in the magnetic diffusivity until the characteristic time for magnetic diffusion becomes comparable to that of thermal conduction, (2) an increase in the reconnection rate, and (3) more efficient conversion of magnetic energy into thermal energy and kinetic energy of bulk motions. These results provide further explanation of the rapid release of magnetic energy into heat and kinetic energy seen during flares and coronal mass ejections. In this work, we demonstrate that the consideration of anisotropic thermal conduction and Spitzer-type, temperature-dependent magnetic diffusivity, as in the real solar corona, are crucially important for explaining the occurrence of fast reconnection during solar eruptions.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2023

Diffusion–convection model of runaway electrons due to large magnetohydrodynamic perturbations in post-thermal quench plasmas

Systematic test particle tracing simulations for runaway electrons (REs) are performed for six post-thermal quench equilibria from DIII-D and ITER, where large scale, kink-like n = 1 (n is the toroidal mode number) magnetohydrodynamic (MHD) instabilities are found. The modeled particle guiding center orbits allow extraction of the effective diffusion–convection coefficients of REs in the presence of large three-dimensional (3D) perturbations up to 10% of the equilibrium toroidal field. With a fixed spatial distribution of the field perturbation, the RE transport coefficients along the plasma radial coordinate track reasonably well with the surface-averaged perturbation level. A substantial variation in the value of the transport coefficients—by three orders of magnitude in most cases, however, occurs with varying launching location of REs along the plasma radius. Large 3D perturbations almost always lead to comparable diffusion and convection processes, meaning that diffusion alone is insufficient to describe the particle motion. At lower (but still high) level of perturbation, the RE convection is found to be dominant over diffusion. A similar observation is made when the perturbation is too strong. In the presence of large perturbation, the dependence of the RE transport on the particle energy is sensitive to the spatial distribution of the perturbation. Based on numerically obtained RE transport coefficients, an analytic fitting model is proposed to quantify the particle diffusion and convection processes due to large MHD events in post-thermal quench plasmas. The model is shown to reasonably well reproduce the direct test particle tracing results for the RE loss fraction and can, thus, be useful for incorporating into other kinetic RE codes in order to simulate the RE beam evolution in the presence of large 3D perturbations.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials

Shallow, Boron (B)-doped p{sup +} emitters have been realized using spin-on deposition and Flash Lamp Annealing (FLA) to diffuse B into monocrystalline float zone Silicon (Si). The emitters extend between 50 and 140 nm in depth below the surface, have peak concentrations between 9 × 10{sup 19 }cm{sup –3} and 3 × 10{sup 20 }cm{sup –3}, and exhibit sheet resistances between 70 and 3000 Ω/□. An exceptionally large increase in B diffusion occurs for FLA energy densities exceeding ∼93 J/cm{sup 2} irrespective of 10 or 20 ms pulse duration. The effect is attributed to enhanced diffusion of B caused by Si interstitial injection following a thermally activated reaction between the spin-on diffusant film and the silicon wafer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1998

New Mission Concept Study: Energetic X-Ray Imaging Survey Telescope (EXIST)

This Report summarizes the activity carried out under the New Mission Concept (NMC) study for a mission to conduct a sensitive all-sky imaging survey in the hard x-ray (HX) band (approximately 10-600 keV). The Energetic X-ray Imaging Survey Telescope (EXIST) mission was originally proposed for this NMC study and was then subsequently proposed for a MIDEX mission as part of this study effort. Development of the EXIST (and related) concepts continues for a future flight proposal. The hard x-ray band (approximately 10-600 keV) is nearly the final band of the astronomical spectrum still without a sensitive imaging all-sky survey. This is despite the enormous potential of this band to address a wide range of fundamental and timely objectives - from the origin and physical mechanisms of cosmological gamma-ray bursts (GRBs) to the processes on strongly magnetic neutron stars that produce soft gamma-repeaters and bursting pulsars; from the study of active galactic nuclei (AGN) and quasars to the origin and evolution of the hard x-ray diffuse background; from the nature and number of black holes and neutron stars and the accretion processes onto them to the extreme non-thermal flares of normal stars; and from searches for expected diffuse (but relatively compact) nuclear line (Ti-44) emission in uncatalogued supernova remnants to diffuse non-thermal inverse Compton emission from galaxy clusters. A high sensitivity all-sky survey mission in the hard x-ray band, with imaging to both address source confusion and time-variable background radiations, is very much needed.

Source record↗
DOE OSTI2018

The microstructure and property variations of metals induced by electric current treatment: A review

Heat treatment has been widely applied for manipulating the microstructure and properties of metals with thermal energy. The thermal energy triggers the atomic diffusion accompanied by dislocation movement and results in the subsequent property variations in metals. One of the attractive efforts in the past decades is the development of a direct treatment of metals with electric current stressing as an alternative method for conventional heat treatment. Electric current treatment provides thermal energy from Joule heat (thermal effect) and kinetic energy from electron momentum (athermal effect). This article reviewed the practices of electric current treatment, microstructure-property variations and the physical metallurgy involved in a variety of metals. Both thermal and athermal effects have been well recognized in the literatures. An appropriate manipulation of the electric current treatment enables the control of both effects and thus the microstructure and properties of metals.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Orders of magnitude reduction in the thermal conductivity of polycrystalline diamond through carbon, nitrogen, and oxygen ion implantation

Despite the exceptional thermal and mechanical functionalities of diamond, its superlative properties are highly subject to the presence of point defects, dislocations, and interfaces. Here, polycrystalline diamond is ion implanted with C 3+ , N 3+ , and O 3+ ions at an energy of 16.5 MeV, producing an amorphous layer at the projected range and a damaged crystalline region between the surface and amorphous layer. Using time-domain thermoreflectance in combination with thermal penetration depth calculations based upon the multilayer heat diffusion equation, it is determined that reductions in the thermal conductivity can span nearly two orders of magnitude while still maintaining a polycrystalline structure within the regions thermally probed. Dynamical diffraction simulations of high-resolution x-ray diffraction measurements demonstrate the formation of a strained layer localized at the end of range, with much lower levels of strain near the surface. Furthermore, within the polycrystalline region above the amorphous layer, the average number of displacements-per-atom from the ion irradiation is found to be < 1%, with mass impurity concentrations much less than 1%. These low defect concentrations within the thermally probed region demonstrate the remarkably large impact that dilute levels of defects from the ion implantation can have on the thermal conductivity of diamond.

36 MATERIALS SCIENCE↗
NASA NTRS1991

Characteristics-based methods applied to infinite Prandtl number thermal convection in the hard turbulent regime

Characteristics-based methods for the advection-diffusion equation are presented and directly applied to study thermal convection with extremely large Rayleigh number (Ra). It is shown that the operator-splitting method for advection-diffusion problems is very accurate for determining the advected field at extremely high Peclet number (Pe). The technique presented is considered to have great potential for solving advection-dominated problems, while the Langrangian method is more accurate for lower Pe. It is noted that the accuracy of these characteristics-based methods strongly depends on the quality of interpolation. The computational time for the operator-splitting method grows with the number of time steps employed. The Langrangian method was used for simulations of convection at very high Ra, up to 3 x 10 to the 9th, and time-dependent, thermal convection solutions were obtained for infinite Prandtl number.

Malevsky, A. V.↗
NASA NTRS2002

Graphite Ablation and Thermal Response Simulation Under Arc-Jet Flow Conditions

The Two-dimensional Implicit Thermal Response and Ablation program, TITAN, was developed and integrated with a Navier-Stokes solver, GIANTS, for multidimensional ablation and shape change simulation of thermal protection systems in hypersonic flow environments. The governing equations in both codes are demoralized using the same finite-volume approximation with a general body-fitted coordinate system. Time-dependent solutions are achieved by an implicit time marching technique using Gauess-Siedel line relaxation with alternating sweeps. As the first part of a code validation study, this paper compares TITAN-GIANTS predictions with thermal response and recession data obtained from arc-jet tests recently conducted in the Interaction Heating Facility (IHF) at NASA Ames Research Center. The test models are graphite sphere-cones. Graphite was selected as a test material to minimize the uncertainties from material properties. Recession and thermal response data were obtained from two separate arc-jet test series. The first series was at a heat flux where graphite ablation is mainly due to sublimation, and the second series was at a relatively low heat flux where recession is the result of diffusion-controlled oxidation. Ablation and thermal response solutions for both sets of conditions, as calculated by TITAN-GIANTS, are presented and discussed in detail. Predicted shape change and temperature histories generally agree well with the data obtained from the arc-jet tests.

Chen, Y.-K.↗
DOE OSTI2021

Fourier-like Thermal Relaxation of Nanoscale Explosive Hot Spots

Hot spots are local regions of high temperature that are widely considered to govern explosive initiation. Hot spot dynamics rests on a delicate balance between heat generation due to chemical reactions and heat loss through thermal conduction, making accurate determinations of the conductivity under extreme conditions a key component of predictive explosive models. We develop here an approach to directly determine the thermal transport properties of explosive hot spots with realistic initial structures through a combination of molecular dynamics (MD) and diffusive heat equation (HEq) modeling. Effective thermal conductivity values are determined by fitting HEq models to MD predictions of long timescale hot spot relaxation. The approach is applied to model hot spots in the molecular crystalline explosive 1,3,5-triamino-2,4,6-trinitrobenzene (TATB) for a range of shock strengths and two limiting cases for impact orientation. Isotropic and anisotropic HEq models yield similar results, despite TATB exhibiting some of the largest and most anisotropic thermal conductivity values for explosive near normal conditions. The conductivity is found to be a strong function of density, which parametrically captures dependence on temperature, pressure, and material state. The associated root-mean-square errors of the fitted HEq models are approximately 5% of MD predicted final equilibrium temperatures. Here, the conductivity values determined here for TATB hot spots are considerably larger than those used in a prior hot spot criticality study, which may significantly impact predictions for critical hot spot sizes. The approach provides a convenient foundation for determining the effective thermal conductivity for hot spot problems in other explosives and directly yields information on reasonable approximations that might be taken in higher-level models for those materials.

36 MATERIALS SCIENCE↗
NASA NTRS2015

Ultra-Flexible Thermal Bus for Use in the Astro-H Adiabatic Demagnetization Refrigerator

The adiabatic demagnetization refrigerator (ADR) developed for the Astro-H Soft-X-ray Spectrometer (SXS) is a multi-stage solid-state cooler. It is capable of holding the SXS detector array at 0.050 K for greater than 24 hours with a recycle time of less than one hour. This quick recycle time relies upon high-conductivity thermal straps to couple the individual stages to a pair of heat switches without imposing a lateral load on the paramagnetic salt pills. To accomplish this we construct thermal straps using a technique of diffusion bonding together the ends of high-purity copper straps leaving the length between as individual foils. A thermal bus created this way has a thermal conductivity comparable to a solid strap of the equivalent thickness but with much-increased flexibility. The technique for selecting the base material, machining, cleaning, forming into final shape, and finally bonding together individual foils will be discussed along with examples of complete straps in various geometries.

Thermal Conductivity↗
DOE OSTI2016

SUPPRESSION OF ELECTRON THERMAL CONDUCTION IN THE HIGH β INTRACLUSTER MEDIUM OF GALAXY CLUSTERS

Understanding the thermodynamic state of the hot intracluster medium (ICM) in a galaxy cluster requires knowledge of the plasma transport processes, especially thermal conduction. The basic physics of thermal conduction in plasmas with ICM-like conditions has yet to be elucidated, however. We use particle-in-cell simulations and analytic models to explore the dynamics of an ICM-like plasma (with small gyroradius, large mean free path, and strongly sub-dominant magnetic pressure) driven by the diffusive heat flux associated with thermal conduction. Linear theory reveals that whistler waves are driven unstable by electron heat flux, even when the heat flux is weak. The resonant interaction of electrons with these waves then plays a critical role in scattering electrons and suppressing the heat flux. In a 1D model where only whistler modes that are parallel to the magnetic field are captured, the only resonant electrons are moving in the opposite direction to the heat flux, and the electron heat flux suppression is small. In 2D or more, oblique whistler modes also resonate with electrons moving in the direction of the heat flux. The overlap of resonances leads to effective symmetrization of the electron distribution function and a strong suppression of heat flux. The results suggest that thermal conduction in the ICM might be strongly suppressed, possibly to negligible levels.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2022

Electrical Analysis of Pulsed Laser Annealed Poly-Si:Ga/SiOx Passivating Contacts

High-efficiency single crystalline silicon (c-Si) solar cells require precise control of dopant diffusion profiles and highly active doping concentrations through thermal annealing. Conventional furnace annealing has been successfully employed for dopant diffusion in aluminum back-surface field (Al-BSF), passivated emitter and rear contact (PERC), and Topcon cells. However, furnace annealing limits some next-generation polycrystalline silicon (poly-Si) on SiOx passivating contacts. This limitation largely affects p-type passivating contacts by not being able to: 1) control the dopant diffusion accurately to prevent B segregation at the SiOx and c-Si interface; and 2) provide highly activated doping concentrations for low contact resistivity. In this contribution, we use a nanosecond excimer laser to examine the passivation quality and electrical performance of both B- and Ga-doped poly-Si/SiOx passivating contacts. The core of this method is to take advantage of the nonequilibrium nature of the anneal through rapid melting and recrystallizing the poly-Si in a short timescale and to achieve doping concentrations above the solid solubility limit. Simulations were performed on polished surfaces to visualize the doping diffusion profiles under different laser conditions, and secondary ion mass spectrometry (SIMS) was used to verify the experimental diffusion profiles post pulsed laser melting (PLM). The results show the dopant diffusion profiles can be tuned precisely through PLM. The electrical analysis using VdP-Hall measurements reveals that the active doping concentration reached 10^21 cm-3 for B and ~2×10^21 cm-3 for Ga in poly-Si, far exceeding their solid solubility limit in Si, with a nearly 100% dopant activation achieved for B, and 20% for Ga. This highly activated dopant profile results in a low contact resistivity of <15 mO·cm^2 for B-doped contacts and <40 mO·cm^2 for Ga-doped contacts. We demonstrate that the passivation quality of the laser annealed contacts shows a linear dependency with the laser energy density and the number of pulses. PLM was also performed on random pyramid textured samples, and we found that preferential melting exists for the tips of pyramids, which can be pursued further for selective pinhole opening. Additionally, we perform thermal stability tests of these hyperdoped passivating contacts and show that under certain laser conditions, the B-doped samples exhibit good thermal stability with near full activation for temperatures up to 800°C. Lastly, we transfer this technique to a larger area by overlapping laser spots and show uniform passivation quality and electrical performance. We are currently implementing this PLM annealed p-type passivating contacts into double-side back-junction poly-Si/SiOx passivating contact devices. Our results show that PLM can not only enable the next generation of high-efficiency c-Si photovoltaics technology but can also benefit the c-Si integrated circuit industry through hyperdoping other semiconductors with atoms that may otherwise have a low solubility.

doping diffusion profile↗
DOE OSTI2014

Investigation of Thermal Interface Materials Using Phase-Sensitive Transient Thermoreflectance Technique: Preprint

With increasing power density in electronics packages/modules, thermal resistances at multiple interfaces are a bottleneck to efficient heat removal from the package. In this work, the performance of thermal interface materials such as grease, thermoplastic adhesives and diffusion-bonded interfaces are characterized using the phase-sensitive transient thermoreflectance technique. A multi-layer heat conduction model was constructed and theoretical solutions were derived to obtain the relation between phase lag and the thermal/physical properties. This technique enables simultaneous extraction of the contact resistance and bulk thermal conductivity of the TIMs. With the measurements, the bulk thermal conductivity of Dow TC-5022 thermal grease (70 to 75 um bondline thickness) was 3 to 5 W/(m-K) and the contact resistance was 5 to 10 mm2-K/W. For the Btech thermoplastic material (45 to 80 μm bondline thickness), the bulk thermal conductivity was 20 to 50 W/(m-K) and the contact resistance was 2 to 5 mm2-K/W. Measurements were also conducted to quantify the thermal performance of diffusion-bonded interface for power electronics applications. Results with the diffusion-bonded sample showed that the interfacial thermal resistance is more than one order of magnitude lower than those of traditional TIMs, suggesting potential pathways to efficient thermal management.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2019

On the Dependence of Durability of Thermal Barrier Coatings on the Oxidation Resistance of Composite Substrate Systems Produced by Diffusing Platinum into Selected Ni-Based Superalloys

Platinum is diffused into the single-crystal superalloys CMSX-4 and CMSX-10 to integrate a surface protection layer consisting of a mixture of γ′- and γ-phases. It is shown that the Pt/CMSX-10 system is characterized by higher thermal stability and resistance to oxidation in comparison with the Pt/CMSX-4 system. Such difference is correlated with the initial microstructure and composition of the two systems and is reflected on their performance in thermal barrier coatings utilizing yttria-stabilized zirconia as top coating. Based upon cyclic oxidation tests, the Pt/CMSX-10 system is found to provide about threefold increase in useful life. However, both coatings are found to fail by spallation of the top coating due to decohesion of the thermally grown oxide developed by each system. It is concluded that the higher performance provided by the Pt/CMSX-10 stems from decelerated kinetics of interdiffusion and oxidation.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Differences in Sb 2 Te 3 growth by pulsed laser and sputter deposition

High quality van der Waals chalcogenides are important for phase change data storage, thermoelectrics, and spintronics. Using a combination of statistical design of experiments and density functional theory, we clarify how out-of-equilibrium van der Waals epitaxial deposition methods can improve the crystal quality of Sb 2 Te 3 films. We compare films grown by radio frequency sputtering and pulsed laser deposition (PLD). The growth factors that influence the crystal quality for each method are different. For PLD grown films a thin amorphous Sb 2 Te 3 seed layer most significantly influences the crystal quality. In contrast, the crystalline quality of films grown by sputtering is rather sensitive to the deposition temperature and less affected by the presence of a seed layer. This difference is somewhat surprising as both methods are out-of-thermal-equilibrium plasma-based methods. Non-adiabatic quantum molecular dynamics simulations show that this difference originates from the density of excited atoms in the plasma. The PLD plasma is more intense and with higher energy than that used in sputtering, and this increases the electronic temperature of the deposited atoms, which concomitantly increases the adatom diffusion lengths in PLD. In contrast, the adatom diffusivity is dominated by the thermal temperature for sputter grown films. These results explain the wide range of Sb 2 Te 3 and superlattice crystal qualities observed in the literature. Finally, these results indicate that, contrary to popular belief, plasma-based deposition methods are suitable for growing high quality crystalline chalcogenides.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Optimal carrier concentration for FeSb 2 colossal thermopower

Crystals of FeSb 2 correlated narrow-gap semiconductor host colossal thermopower values. By tuning the impurity level here, we demonstrate that electron-phonon scattering that transfers phonon momentum to electrons is efficient only for certain optimal carrier concentration in the low-mobility band. Phonon drag acting on such states in crystals with high phonon mean free path enhances thermopower to colossal values, whereas for different carrier concentration, dominant thermal transport mechanism is electronic diffusion. This highlights the dual nature of correlated in-gap states that take part in the phonon drag but also reduce phonon mean free path.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗