Elevated Temperature Alpha Spectroscopy with Nickel-Platinum {sup 4}H-SiC Schottky Diodes
In order to protect against the diversion of special nuclear material during pyro-processing of spent nuclear fuel, an online monitoring of the actinide concentrations must be developed. In order to do so, alpha spectroscopy can be employed in order to determine the relative concentrations of various isotopes based on the characteristic alpha spectrum of each isotope of interest. The operating temperatures in the pyro-processing environment are such that high temperature operability of alpha detectors is required. The Idaho National Laboratory (INL) electro-refiner operates at a molten salt temperature of approximately 500 deg. C. The vapor temperature above the molten salt is approximately 100 deg. C. In order to provide reasonably compact online monitoring of the actinide concentrations within the molten salt the detector would be located in this vapor region. The temperature in this location is too high for a commercial silicon detector to operate without serious signal degradation due to thermal noise. As the operating temperature increases, the thermal energy available to the charge carriers within the semiconductor increases. For narrow band-gap semiconductors like silicon, this increase in free charge carriers with increasing temperature leads to unacceptable leakage current at relatively low temperatures when compared with wide band-gap materials. In order to overcome this, a wide band-gap material is employed. An alpha particle sensor utilizing a nickel Schottky barrier {sup 4}HSiC wafer was heated to a temperature of 100 deg. C and an alpha spectrum collected. The performance of the sensor at 100 deg. C was compared to the room temperature performance. Molten salts such as those used in the INL electro-refiner exhibit strong corrosive properties. Any sensor which will be exposed to or submerged in the molten salt must have a ruggedized sensor face capable to withstand the corrosive environment. In the contact design utilized in this paper the Schottky barrier forming metal, nickel, is coated with a thin layer of platinum to serve as a corrosion resistant layer. An additional modification to previous designs was the simplification of the Schottky barrier composition. A Schottky barrier is created when a metal is brought into close physical contact with a semiconductor. To first order, the barrier height of the Schottky barrier is a result of the mismatch between the electron affinity of the semiconductor and the metal work function of the metal. In previous iterations, the high temperature performance of the detectors had been limited by diffusion processes between the various metal layers. In order to reduce the likelihood of such a degradation, the Schottky contact structure was simplified without loss of functionality. By replacing the multiple metal layers with a nickel Schottky forming layer capped with a thin platinum layer, the potential degradation of the Schottky barrier height could be reduced, primarily through the similar Schottky barrier height to nickel formed by platinum with SiC.