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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,603 records · Page 89
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Grid Optimization with Solar (GO-Solar)

This presentation discusses the goal to accelerate industry adoption of ADMS to improve normal operations with high DERs and improve resilience and reliability.

GO-Solar↗
DOE OSTI2018

Charge Carrier Activity on Single-Particle Photo(electro)catalysts: Toward Function in Solar Energy Conversion

Understanding the fundamental properties of charge carriers on the surface of semiconductor photo(electro)catalysts is key to the rational design of efficient photo(electro)catalytic devices for sunlight-driven energy conversion. Here high spatial resolution information is always desirable because of the ubiquitous heterogeneity in semiconductor particles. In this Perspective, we review the latest advances in nanoscale imaging and quantitative analysis of charge carrier activities on individual semiconductor particles down to subparticle resolution, covering the approaches of single-molecule super-resolution fluorescence imaging, scanning electron microscopy, and photoluminescence microscopy. We further highlight direct, operando functional assessments of their performances toward the targeted photo(electro)-catalytic processes through single- and subparticle photocurrent measurements. Here, we also discuss the significance of establishing quantitative relations between the desired functions of photo(electro)catalysts and their surface charge carrier activities. These fundamental relations can provide guiding principles for rationally engineering photo(electro)catalytic systems, for example with cocatalysts, for a broad range of applications.

14 SOLAR ENERGY↗
DOE OSTI2022

Quantum-size-tuned heterostructures enable efficient and stable inverted perovskite solar cells

The energy landscape of reduced-dimensional perovskites (RDPs) can be tailored by adjusting their layer width (n). Recently, 2D/3D heterostructures containing n = 1 and 2 RDPs have produced PSCs with > 25% power conversion efficiency (PCE). Unfortunately, this method does not translate to inverted PSCs due to electron blocking at the 2D/3D interface. Here we report a method to increase the layer width of RDPs in 2D/3D heterostructures in order to address this problem. We discover that bulkier organics form 2D heterostructures more slowly, resulting in wider RDPs; and that small modifications to ligand design induce preferential growth of n ≥ 3 RDPs. Levering these insights, we developed efficient inverted PSCs (certified 23.91% quasi-steady state efficiency). Furthermore, unencapsulated devices operate at room temperature and ~50% relative humidity for over 1000 hrs without loss of PCE; and, when subjected to ISOS-L3 accelerated aging encapsulated devices retain 92% of PCE after 500 hrs.

14 SOLAR ENERGY↗
DOE OSTI2014

Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4} devices

We investigate point defects in the buffer layers CdS and ZnS that may arise from intermixing with Cu(In,Ga)(S,Se){sub 2} (CIGS) or Cu{sub 2}ZnSn(S,Se){sub 4} (CZTS) absorber layers in thin-film photovoltaics. Using hybrid functional calculations, we characterize the electrical and optical behavior of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities in the buffer. We find that In and Ga substituted on the cation site act as shallow donors in CdS and tend to enhance the prevailing n-type conductivity at the interface facilitated by Cd incorporation in CIGS, whereas they are deep donors in ZnS and will be less effective dopants. Substitutional In and Ga can favorably form complexes with cation vacancies (A-centers) which may contribute to the “red kink” effect observed in some CIGS-based devices. For CZTS absorbers, we find that Zn and Sn defects substituting on the buffer cation site are electrically inactive in n-type buffers and will not supplement the donor doping at the interface as in CIGS/CdS or ZnS devices. Sn may also preferentially incorporate on the S site as a deep acceptor in n-type ZnS, which suggests possible concerns with absorber-related interfacial compensation in CZTS devices with ZnS-derived buffers. Cu, Na, and K impurities are found to all have the same qualitative behavior, most favorably acting as compensating acceptors when substituting on the cation site. Our results suggest one beneficial role of K and Na incorporation in CIGS or CZTS devices is the partial passivation of vacancy-related centers in CdS and ZnS buffers, rendering them less effective interfacial hole traps and recombination centers.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Non-monotonic effect of growth temperature on carrier collection in SnS solar cells

We quantify the effects of growth temperature on material and device properties of thermally evaporated SnS thin-films and test structures. Grain size, Hall mobility, and majority-carrier concentration monotonically increase with growth temperature. However, the charge collection as measured by the long-wavelength contribution to short-circuit current exhibits a non-monotonic behavior: the collection decreases with increased growth temperature from 150 °C to 240 °C and then recovers at 285 °C. Fits to the experimental internal quantum efficiency using an opto-electronic model indicate that the non-monotonic behavior of charge-carrier collection can be explained by a transition from drift- to diffusion-assisted components of carrier collection. The results show a promising increase in the extracted minority-carrier diffusion length at the highest growth temperature of 285 °C. These findings illustrate how coupled mechanisms can affect early stage device development, highlighting the critical role of direct materials property measurements and simulation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

QUASI-PERIODIC SLIPPING MAGNETIC RECONNECTION DURING AN X-CLASS SOLAR FLARE OBSERVED BY THE SOLAR DYNAMICS OBSERVATORY AND INTERFACE REGION IMAGING SPECTROGRAPH

We first report the quasi-periodic slipping motion of flare loops during an eruptive X-class flare on 2014 September 10. The slipping motion was investigated at a specific location along one of the two ribbons and can be observed throughout the impulsive phase of the flare. The apparent slipping velocity was 20–110 km s{sup −1}, and the associated period was 3–6 minutes. The footpoints of flare loops appeared as small-scale bright knots observed in 1400 Å, corresponding to fine structures of the flare ribbon. These bright knots were observed to move along the southern part of the longer ribbon and also exhibited a quasi-periodic pattern. The Si iv 1402.77 Å line was redshifted by 30–50 km s{sup −1} at the locations of moving knots with a ∼40–60 km s{sup −1} line width, larger than other sites of the flare ribbon. We suggest that the quasi-periodic slipping reconnection is involved in this process and the redshift at the bright knots is probably indicative of reconnection downflow. The emission line of Si iv at the northern part of the longer ribbon also exhibited obvious redshifts of about 10–70 km s{sup −1} in the impulsive phase of the flare, with the redshifts at the outer edges of the ribbon larger than those in the middle. The redshift velocities at post-flare loops reached about 80–100 km s{sup −1} in the transition region.

79 ASTRONOMY AND ASTROPHYSICS↗