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At least 1,603 records · Page 89

Durability enhancement of all-solid-state electrochromic devices by adjusting the charge density ratio between electrochromic and counter electrode layers

Here, owing to an increase in global warming, smart-window devices based on charge-balanced electrochromic devices (ECDs), which exhibit high potential to increase the thermal efficiency of buildings, have gained prominence. However, studies on the fabrication and cycling stability of charge-balanced ECDs are scarce. In this study, WO 3 and NiO x films were deposited on indium-tin-oxide (ITO)-coated glass substrates by reactive direct-current magnetron sputtering, and the deposition time was varied to control the thickness and charge density of the thin films. Subsequently, the NiO x /ITO/glass and WO 3 /ITO/glass substrates were laminated with a Li-based polymeric electrolyte to fabricate all-solid-state ECDs comprising electrochromic (EC) and counter-electrode (CE) layers in charge-density ratios of 12.6, 6.4, 2.3, and 1.1. Changes in the electrochromic properties, device-layer microstructure, crystal structure, and elemental composition of the as-constructed ECDs before and after degradation were investigated to understand the influence of the charge-density ratio of the EC and CE layers on the long-term durability of ECDs. Increasing the charge-density ratio decreased the cycling stability of the device owing to changes in the microstructure and crystal structure of the NiO x layer in the microstructural deep-trap sites. Among all the ECDs, those comprising EC and CE layers with similar charge densities showed the most stable optical modulation and highest long-term durability. Finally, based on the aforementioned results, a degradation mechanism for charge-imbalanced all-solid-state ECDs was proposed. This study is expected to open new frontiers in designing optimal-performance electrochemical devices with a wide variety of potential applications.

14 SOLAR ENERGY↗

Correlating high temperature mechanical and tribological properties of CrAlN and CrAlSiN hard coatings

CrAlN and CrAlSiN hard coatings deposited by magnetron sputtering were analyzed for their high temperature mechanical and tribological properties. High temperature nanoindentation measurements on both coatings were performed from room temperature up to 700 °C in steps of 100 °C where a reduction in hardness H and elastic modulus E* from their initial values was noticed. In addition, high temperature tribological tests were conducted in inert atmosphere in the same temperature range to obtain information about the coefficient of friction and the wear coefficient. In order to link the tribological behavior to the obtained mechanical properties, the H/E* ratio was calculated and compared to the high temperature wear from the current and other studies with similar coatings. Finally, the evolution of the mechanical and tribological properties at high temperature is discussed based on the current knowledge available in literature.

Drnovšek, Aljaž↗

High temperature fracture toughness of single-layer CrAlN and CrAlSiN hard coatings

Hardness and toughness are among of the most important physical properties of hard coatings and it is important to analyze them at temperatures present during coating applications. CrAlN and CrAlSiN are hard coating materials frequently used in high temperature applications. Here, while both possess high oxidation resistance and thermal stability, they differ in their microstructure. In this work, the fracture toughness of magnetron-sputtered single-layer CrAlN and CrAlSiN hard coatings was determined up to 700 °C by in-situ scanning electron microscopy micro-cantilever deflection tests. The results show a decreasing trend of the fracture toughness with increasing temperature. While both coatings' fracture toughness trends are similar up to 400 °C, they diverge at higher temperatures. In general, the evolution of the fracture toughness with increasing temperature shows similarities to the observed changes in hardness in the same temperature range.

36 MATERIALS SCIENCE↗

Adhesion, structure, and mechanical properties of Cr HiPIMS and cathodic arc deposited coatings on SiC

Chromium deposited by high-power impulse magnetron sputtering (HIPIMS) versus cathodic arc (CA) processes exhibits very different mechanical properties. Combining the two can result in a single-phase with superior performance that can be tailored for use in coating SiC for advanced nuclear fuel cladding. Coating morphology, residual stress, elemental depth profiles, and mechanical testing by scratch, pull-off adhesion, and microcantilevers are shown for HiPIMS, CA, and combined coatings. CA coatings were likely to spall and had lower adhesion strength due to tensile residual stresses but had desirable material properties. Additionally, by depositing an initial layer of Cr by HiPIMS followed by a layer of Cr by CA, a more adherent coating was achieved and some of the stress issues with CA morphology were resolved. Combined coatings withstood at least 80 MPa in pull-off adhesion tests and had maximum failure stress values of 5GPa in microcantilever tests. These results were better than either individual deposition method and point to a hybrid approach being a path forward for a more robust coating.

36 MATERIALS SCIENCE↗

Modes of strain accommodation in Cu-Nb multilayered thin film on indentation and cyclic shear

Two-phase layered thin films with a high density of semi-coherent interfaces exhibit excellent mechanical properties and thermal stability. Here, in this study, a magnetron-sputtered Cu-Nb dual-layered thin film (~500 nm for Cu and ~150 nm for Nb) having an amorphous interface between Cu and Nb with a high density of aligned growth twins in Cu is subjected to severe surface deformation. The material is loaded using indentation and cyclic shear under tribological testing. The strain accommodation in the subsurface microstructure after deformation varies based on the local structure and deformation mode. Grain refinement and crack formations in the stressed region of the Nb layer and localized crystallization of the amorphous interface are observed after indentation and scratch testing. Pronounced detwinning of growth twins in the Cu layer under the cyclic shear strain leaves large dislocations sites and loops which are observed both by high-resolution transmission electron microscopy and experiment-guided molecular dynamic (MD) simulations. Our simulations provided insights into understanding the pathway for the detwinning process under cyclic shear loading.

36 MATERIALS SCIENCE↗

Thickness dependence of Al 0.88 Sc 0.12 N thin films grown on silicon

The thickening behavior of aluminum scandium nitride (Al 0.88 Sc 0.12 N) films grown on Si(111) substrates has been investigated experimentally using X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy, and residual stress measurement. Al 0.88 Sc 0.12 N films were grown with thicknesses spanning 14 nm to 1.1 um. TEM analysis shows that the argon sputter etch used to remove the native oxide prior to deposition produced an amorphous, oxygen-rich surface, preventing epitaxial growth. XRD analysis of the films show that the A1ScN(002) orientation improves as the films thicken and the XRD A1ScN(002) rocking curve full width half maximum decreases to 1.34 q for the 1.1 pm thick film. XRD analysis shows that the unit cell is expanded in both the a- and c-axes by Sc doping; the a-axis lattice parameter was measured to be 3.172 ± 0.007 A and the c-axis lattice parameter was measured to be 5.000 ± 0.001 A, representing 1.96% and 0.44% expansions over aluminum nitride lattice parameters, respectively. The grain size and roughness increase as the film thickness increases. A stress gradient forms through the film; the residual stress grows more tensile as the film thickens, from -1.24 GPa to +8.5MPa.

36 MATERIALS SCIENCE↗

Degradation of Mg-doped zinc oxide buffer layers in thin film CdTe solar cells

Cadmium Sulphide is the conventional n-type buffer layer used in thin film Cadmium Telluride solar cells. It is well known that Cadmium Sulphide causes optical losses and sulphur diffuses into the absorber during high temperature activation. Sputter-deposited Mg-doped ZnO (MZO) has been shown to be an attractive buffer layer for Cadmium Telluride solar cells due to its transparency and tuneable band gap. It is also stable to high temperature processing and avoids diffusion of elements into the cadmium telluride absorber during the cadmium chloride activation treatment. However, degradation is observed in solar cells incorporating MZO buffer layers. Analysis of the MZO film surface potential has revealed significant fluctuations in the thin film work function once the layer is exposed to the atmosphere following deposition. These fluctuations are attributed to the high reactivity to water vapour of the MgO contained in the MZO films. This has been analysed using X-ray Photoelectron Spectroscopy to determine corresponding changes in the surface chemistry. The Zinc Oxide component is relatively stable, but the analysis shows that MgO forms a Mg(OH) 2 layer on the MZO surface which forms a secondary barrier at the MZO/CdTe interface and/or at the interface between MZO and the Fluorine-doped SnO 2 . This affects the Fill Factor and as a consequence it degrades the conversion efficiency.

14 SOLAR ENERGY↗

Formation of Al 3 Sc in Al 0.8 Sc 0.2 thin films

We report the formation of Al 3 Sc, in 100 nm Al 0.8 Sc 0.2 films, is found to be driven by exposure to high temperature through higher deposition temperature or annealing. High film resistivity was observed in films with lower deposition temperature that exhibited a lack of crystallinity, which is anticipated to cause more electron scattering. An increase in deposition temperature allows for the nucleation and growth of crystalline Al 3 Sc regions that were verified by electron diffraction. The increase in crystallinity reduces electron scattering, which results in lower film resistivity. Annealing Al 0.8 Sc 0.2 films at 600 °C in an Ar vacuum environment also allows for the formation and recrystallization of Al 3 Sc and Al and yields saturated resistivity values between 9.58 and 10.5 μΩ-cm regardless of sputter conditions. Al 3 Sc was found to nucleate and grow in a random orientation when deposited on SiO 2 , and highly {111} textured when deposited on 100 nm Ti and AlN films that were used as template layers. The rocking curve of the Al 3 Sc 111 reflection for the as-deposited films on Ti and AlN at 450 °C was 1.79° and 1.68°, respectively. Annealing the film deposited on the AlN template reduced the rocking curve substantially to 1.01° due to recrystallization of Al 3 Sc and Al within the film.

36 MATERIALS SCIENCE↗

Tribological performance of quaternary CrSiCN coatings under dry and lubricated conditions

This paper presents an experimental study of friction and wear performance of quaternary CrSiCN coatings deposited on a hardened H-13 steel substrate by a plasma enhanced magnetron sputtering (PEMS) technique. Friction and wear tests were conducted with a reciprocating line contact between a hardened 4370 steel roller and coated and uncoated flat specimens under dry and lubricated conditions. The effects of coating thickness (1, 3.5 and 7.5 μm) on the mechanical properties, friction and wear performance were also assessed. In dry sliding, the friction of coated surfaces was about the same as for uncoated surfaces, except for the 1-μm coating, which had higher friction. Friction for coated surfaces under lubricated contact was in general higher than for uncoated surfaces. There was no measurable wear on any of the coated surfaces, under either dry or lubricated conditions. However, wear was higher on the steel roller counterface sliding against the coated surfaces, with the amount of wear proportional to the mating coating thickness. The effectiveness of formulated lubricant additives was also modified by the coating, resulting in major effects on friction and wear behavior. Finally, this reduction in lubricant additive efficacy is due to the fact that the additives were designed and optimized for ferrous surfaces.

36 MATERIALS SCIENCE↗

Large gyro-orbit model of ion velocity distribution in plasma near a wall in a grazing-angle magnetic field

A model is presented for the ion distribution function in a plasma at a solid target with a magnetic field $\boldsymbol {B}$ inclined at a small angle, $\alpha \ll 1$ (in radians), to the target. Adiabatic electrons are assumed, requiring $\alpha \gg \sqrt {Zm_{e}/m_{i}}$ , where $m_{e}$ and $m_{i}$ are the electron and ion mass, respectively, and $Z$ is the charge state of the ion. An electric field $\boldsymbol {E}$ is present to repel electrons, and so the characteristic size of the electrostatic potential $\phi$ is set by the electron temperature $T_{e}$ , $e\phi \sim T_{e}$ , where $e$ is the proton charge. An asymptotic scale separation between the Debye length $\lambda _{D} = \sqrt {\epsilon _0 T_{{e}} / e^{2} n_{{e}} }$ , the ion sound gyro-radius $\rho _{s} = \sqrt { m_{i} ( ZT_{e} + T_{i} ) } / (ZeB)$ and the size of the collisional region $d_{c} = \alpha \lambda _{\textrm {mfp}}$ is assumed, $\lambda _{D} \ll \rho _{s} \ll d_{c}$ . Here $\epsilon _0$ is the permittivity of free space, $n_{e}$ is the electron density, $T_{i}$ is the ion temperature, $B= |\boldsymbol {B}|$ and $\lambda _{\textrm {mfp}}$ is the collisional mean free path of an ion. The form of the ion distribution function is assumed at distances $x$ from the wall such that $\rho _{s} \ll x \ll d_{c}$ , that is, collisions are not treated. A self-consistent solution of the electrostatic potential for $x \sim \rho _{s}$ is required to solve for the quasi-periodic ion trajectories and for the ion distribution function at the target. The large gyro-orbit model presented here allows to bypass the numerical solution of $\phi (x)$ and results in an analytical expression for the ion distribution function at the target. It assumes that $\tau =T_{i}/(ZT_{e})\gg 1$ , and ignores the electric force on the quasi-periodic ion trajectory until close to the target. For $\tau \gtrsim 1$ , the model provides an extremely fast approximation to energy–angle distributions of ions at the target. These can be used to make sputtering predictions.

Physics↗

Monitoring SEIRAS on a Graphitic Electrode for Surface-Sensitive Electrochemistry: Real-Time Electrografting

The ubiquity of graphitic materials in electrochemistry makes it highly desirable to probe their interfacial behavior under electrochemical control. Probing the dynamics of molecules at the electrode/electrolyte interface is possible through spectroelectrochemical approaches involving surface-enhanced infrared absorption spectroscopy (SEIRAS). Usually, this technique can only be done on plasmonic metals such as gold or carbon nanoribbons, but a more convenient substrate for carbon electrochemical studies is needed. Here, we expanded the scope of SEIRAS by introducing a robust hybrid graphene-on-gold substrate, where we monitored electrografting processes occurring at the graphene/electrolyte interface. These electrodes consist of graphene deposited onto a roughened gold-sputtered internal reflection element (IRE) for attenuated total reflectance (ATR) SEIRAS. The capabilities of the graphene-gold IRE were demonstrated by successfully monitoring the electrografting of 4-amino-2,2,6,6-tetramethyl-1-piperidine N -oxyl (4-amino-TEMPO) and 4-nitrobenzene diazonium (4-NBD) in real time. These grafts were characterized using cyclic voltammetry and ATR-SEIRAS, clearly showing the 1520 and 1350 cm –1 NO 2 stretches for 4-NBD and the 1240 cm –1 C–C, C–C–H, and N–Ȯ stretch for 4-amino-TEMPO. Successful grafts on graphene did not show the SEIRAS effect, while grafting on gold was not stable for TEMPO and had poorer resolution than on graphene-gold for 4-NBD, highlighting the uniqueness of our approach. The graphene-gold IRE is proficient at resolving the spectral responses of redox transformations, unambiguously demonstrating the real-time detection of surface processes on a graphitic electrode. This work provides ample future directions for real-time spectroelectrochemical investigations of carbon electrodes used for sensing, energy storage, electrocatalysis, and environmental applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

In Situ Liquid Secondary Ion Mass Spectrometry: A Surprisingly Soft Ionization Process for Investigation of Halide Ion Hydration

The understanding of ion solvation phenomenon is of significance due to their influences on many important chemical, biological and environmental processes. Mass spectrometry (MS) based methods have been used to investigate this topic with molecular insights. As ion-solvent interactions are weak, ionization processes should be as soft as possible in order to retain solvation structures. An in situ liquid secondary ion MS (SIMS) approach developed in our group has been recently utilized in investigations of Li ion solvation in non-aqueous solution and detected a series of solvated Li ions. As traditionally SIMS has long been recognized as a hard ionization process with strong damage occurring at the sputtering interface, it is very interesting to study further how soft in situ liquid SIMS can be. In this work, we used halide ion hydration as an example to compare the ionization performance of in situ liquid SIMS approach with regular electrospray ionization MS (ESI-MS). Results show that although ESI has been recognized as a soft ionization method, nearly no solvated halide ions were detected by ESI-MS analysis, which acquired only strong signals of salt ion clusters. In contrast, in liquid SIMS spectra, a series of obvious hydrated halide ion compositions could be observed. We further evaluated the hydration numbers of halide ions and revealed the effects of the ion size, charge density and polarizability on the hydration phenomenon. Our findings demonstrated that the in situ liquid SIMS approach is surprisingly soft, and expected to have very broad applications on investigation of various ion-solvent interactions and many other interesting chemical processes (e.g., the initial nucleation of nanoparticle formation) in liquid environment.

Zhang, Yanyan↗

High Resolution Multimodal Chemical Imaging Platform for Organics and Inorganics

Chemical analysis at the nanoscale is critical to advance our understanding of materials and systems from medicine and biology to material science and computing. Macroscale-observed phenomena in these systems are in the large part driven by processes that take place at the nanoscale and are highly heterogeneous. Therefore, there is a clear need to develop a new technology that enables correlative imaging of material functionalities with nanoscale spatial and chemical resolutions that will enable us to untangle the structure–function relationship of functional materials. As such, here, we report on the analytical figures of merit of the newly developed correlative chemical imaging technique of helium ion microscopy coupled with secondary ion mass spectrometry (HIM-SIMS) that enables multimodal topographical/chemical imaging of organic and inorganic materials at the nanoscale. In HIM-SIMS, a focused ion beam acts as a sputtering and ionization source for chemical analysis along with simultaneous high-resolution surface imaging, providing an unprecedented level of spatial resolution for gathering chemical information on organic and inorganic materials. In this work, we demonstrate HIM-SIMS as a platform for a next-generation tool for an in situ material design and analysis capable of down to 8 nm spatial resolution chemical imaging, layered metal structure imaging in depth profiling, single graphene layer detection, and spectral analysis of metals, metal oxides, and polymers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The Role of Cation Coordination in the Electrical and Optical Properties of Amorphous Transparent Conducting Oxides

Amorphous oxide semiconductor materials have demonstrated numerous advantages without compromise of electrical properties as compared to their crystalline counterparts, yet understanding of the fundamental principles allowing this has remained elusive. To study the origins of enhanced optoelectronic properties, we apply high-throughput, combinatorial sputtering, structural and spectral mapping, and computationally intensive ab initio molecular dynamics simulations with density functional theory to a ternary, post-transition metal oxide system, namely, zinc tin oxide. The deposited thin films exhibit a high figure of merit, achieving carrier densities in the range of 1019 to 1020 cm–3 and carrier mobilities up to 35 cm2/Vs. These results highlight the role of local distortions and cation coordination in determining the microscopic origins of carrier generation and transport. In particular, we identify the strong likelihood of Sn undercoordination in both Zn-poor and Zn-rich phases leading to the high carrier concentrations observed. This not only diverges from the still widespread historical indictment of oxygen vacancies controlling carrier population in crystalline oxides but also provides a comprehensive framework to describe the unique structure–property relationships using specific structural and electronic descriptors in disordered phase materials.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,M↗

Synthesis, Stability, and Magnetic Properties of Antiperovskite Co 3 PdN

Experimental synthesis and characterization of theoretically predicted compounds are important steps in the materials discovery pipeline. Here, we report on the synthesis of Co 3 PdN, which was recently predicted to be a stable magnetic antiperovskite. The Co 3 PdN thin films were grown by reactive sputtering and were confirmed to form in an antiperovskite crystal structure. The thermal stability of the compound is demonstrated up to 600 K by in situ X-ray diffraction, though the phase persists at slightly higher temperatures (700 K) in an air-free magnetometer. Both ab initio calculations and magnetization measurements find Co 3 PdN to be ferromagnetic with an experimentally determined Curie temperature of T C = 560 ± 5 K. The saturation magnetization of 1.2 μ B /Co found in the experiment is slightly lower than the 1.7 μ B /Co value expected by theory. A narrow magnetic hysteresis loop with a coercive field of 100 Oe at low temperature suggests that Co 3 PdN might be useful in electronic applications requiring fast switching of the magnetization vector. While prior prediction of Co 3 PdN showed a gapped electronic band structure for each spin channel, we show that this was due to incomplete sampling of Brillouin zone paths and that band crossings exist along R-X|M and X|M-R paths. The metallic nature of Co 3 PdN is further confirmed by temperature-dependent transport measurements, which also show a considerable anomalous Hall effect. Altogether, this work represents an appreciable step toward understanding the synthesis, structure, stability, and properties of a new magnetic material.

14 SOLAR ENERGY↗

Synthesis and characterization of (Sn,Zn)O alloys

SnO exhibits electrical properties that render it promising for solar energy conversion applications, but it also has a strongly indirect band gap. Recent theoretical calculations predict that this disadvantage can be mitigated by isovalent alloying with other group-II oxides such as ZnO. Here, we synthesized new metastable isovalent (Sn,Zn)O alloy thin films by combinatorial reactive co-sputtering and characterized their structural, optical and electrical properties. The alloying of ZnO into SnO leads to a change of the valence state of the tin from Sn 0 via Sn 2+ to Sn 4+ , which can be counteracted by reducing the oxygen partial pressure during the deposition. The optical characterization of the smooth <10 at. % Sn 1-x Zn x O thin films showed an increase in the absorption coefficient in the range from 1 to 2 eV, which is consistent with the theoretical predictions for the isovalent alloying. However, the experimentally observed alloying effect may be convoluted with the effect of local variations of the Sn oxidation state. As a result, this effect would have to be minimized to improve the (Sn,Zn)O optical and electrical properties for their use as absorbers in solar energy conversion applications.

14 SOLAR ENERGY↗

Electronic Structure, Optoelectronic Properties, and Photoelectrochemical Characteristics of γ-Cu 3 V 2 O 8 Thin Films

Thin films of n-type γ-Cu 3 V 2 O 8 are prepared with high phase purity via reactive co-sputtering deposition. Complementary X-ray spectroscopic methods are used to reveal that the valence band maximum consists of O 2p states, while the conduction band minimum is primarily composed of Cu 3d states. Therefore, γ-Cu 3 V 2 O 8 is classified as a charge transfer insulator, in which the 1.80 eV indirect band gap corresponds to the O 2p → Cu 3d transition. Through photoelectrochemical measurements, the surface of γ-Cu 3 V 2 O 8 photoanodes is found to display intrinsic activity for catalyzing water oxidation that is stable with time. The combination of a small optical band gap, suitable valence band energy, and excellent photoelectrochemical stability suggests that γ-Cu 3 V 2 O 8 could be a promising photoanode material. However, it is found that the charge extraction efficiency from these semiconductor photoanodes is strongly limited by a short (20-40 nm) hole diffusion length. Characterization of the electronic structure and transport properties of γ-Cu 3 V 2 O 8 photoanodes suggests strategies for improving energy conversion efficiency and provides fundamental insights that can be used for understanding and evaluating function in a broader class of emerging ternary metal oxides.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗