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At least 163 records · Page 9

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DOE OSTI2021

Accelerated annealing of colloidal crystal monolayers by means of cyclically applied electric fields

Abstract External fields are commonly applied to accelerate colloidal crystallization; however, accelerated self-assembly kinetics can negatively impact the quality of crystal structures. We show that cyclically applied electric fields can produce high quality colloidal crystals by annealing local disorder. We find that the optimal off-duration for maximum annealing is approximately one-half of the characteristic melting half lifetime of the crystalline phase. Local six-fold bond orientational order grows more rapidly than global scattering peaks, indicating that local restructuring leads global annealing. Molecular dynamics simulations of cyclically activated systems show that the ratio of optimal off-duration for maximum annealing and crystal melting time is insensitive to particle interaction details. This research provides a quantitative relationship describing how the cyclic application of fields produces high quality colloidal crystals by cycling at the fundamental time scale for local defect rearrangements; such understanding of dynamics and kinetics can be applied for reconfigurable colloidal assembly.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Thin Film Synthesis of SrZn2P2 with SrI2 Post-Annealing for Enhanced Crystallinity and Optoelectronic Quality

Ternary Zintl phosphides are promising light-absorbing semiconductors for thin-film optoelectronic applications, but strategies for controlling their microstructure and optoelectronic quality remain underexplored. Here, we report the synthesis of phase-pure SrZn2P2 thin films using radio-frequency co-sputtering in a PH3 + Ar atmosphere and investigate the impact of post-growth processing on their structural and optical properties. Grazing-incidence X-ray scattering and Raman spectroscopy confirm the formation of crystalline SrZn2P2 films over a finite compositional window. Optical measurements reveal clear absorption near the direct-band-gap energy (~1.8 eV) and near-band-edge photoluminescence. Further, we have studied the effects of chemically compatible halide-assisted annealing. It is found that SrI2 treatments lead to pronounced grain growth and reduced diffraction peak broadening while preserving phase purity, in contrast to rapid thermal or forming-gas annealing. Notably, annealing with SrI2 at 450 degrees C significantly enhances both the intensity and spatial uniformity of the photoluminescence, thus connecting the observed microstructural consolidation with improved radiative recombination. Our study demonstrates that halide-assisted annealing provides an effective pathway for microstructural control in SrZn2P2 thin films and highlights a generalizable processing strategy for advancing Zintl phosphide semiconductors toward optoelectronic applications.

14 SOLAR ENERGY↗

DOE OSTI2021

Pressure and thermal annealing effects on the photoconversion efficiency of polymer solar cells

This paper presents the results of experimental and theoretical studies of the effects of pressure and thermal annealing on the photo-conversion efficiencies (PCEs) of polymer solar cells with active layers that consist of a mixture of poly(3-hexylthiophene-2,5-diyl) and fullerene derivative (6,6)-phenyl-C 61 -butyric acid methyl ester. The PCEs of the solar cells increased from ~2.3% (for the unannealed devices) to ~3.7% for devices annealed at ~150 °C. A further increase in thermal annealing temperatures (beyond 150 °C) resulted in lower PCEs. Further improvements in the PCEs (from ~3.7% to ~5.4%) were observed with pressure application between 0 and 8 MPa. However, a decrease in PCEs was observed for pressure application beyond 8 MPa. The improved performance associated with thermal annealing is attributed to changes in the active layer microstructure and texture, which also enhance the optical absorption, mobility, and lifetime of the optically excited charge carriers. The beneficial effects of applied pressure are attributed to the decreased interfacial surface contacts that are associated with pressure application. The implications of the results are then discussed for the design and fabrication of organic solar cells with improved PCEs.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Nature of contaminants introduced in silicon wafers during molecular beam epitaxy chamber annealing

Epitaxial monolithic III–V/Si tandem solar cells are one of the most promising technologies to be adopted by the industry after the efficiency of the current market dominating single junction silicon solar cell saturates at its fundamental limit. One of the key limitations of this technology is the degradation of silicon wafers during in situ annealing in the molecular beam epitaxy chamber. Determining the nature of contaminants in this process is key to improve the efficiency of epitaxial tandem solar cells. However, to date, the nature of contaminants from molecular beam epitaxy chambers remains unknown. In this work, we use photoluminescence imaging, lifetime spectroscopy, and deep level transient spectroscopy to measure the electronic properties of extrinsic impurities incorporated during annealing in the molecular beam epitaxy chamber. Photoluminescence images reveal that at least two impurities diffuse into silicon wafers during molecular beam epitaxy annealing. One is highly localized, while the other one is distributed uniformly across the whole wafer. Phosphorus diffusion is found to confine the localized impurity within the diffused layer but is ineffective at preventing the indiffusion of other impurities. Lifetime spectroscopy shows that metastable impurities with characteristic similar to Cr and CrB in our molecular beam epitaxy annealed silicon wafers. No evidence of Fe or FeB was observed. The emission rates and concentrations of the electrically active defects were measured with deep-level transient spectroscopy: The emission rates of detected defects do not match that of known Cr-related defects.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Effects of annealing temperature on the magnetic properties of highly crystalline biphase iron oxide nanorods

We report on the effects of annealing temperatures ranging from 225 °C to 325 °C on the magnetic properties of high aspect ratio iron oxide nanorods consisting of a ferrimagnetic Fe 3 O 4 phase and an antiferromagnetic α-Fe 2 O 3 phase in an as-prepared state. Annealing at the aforementioned temperatures under a constant flow of O 2 for 3 h leads to an increment of the volume fraction of the antiferromagnetic α-Fe 2 O 3 phase and concomitant enhancement of the crystallinity of the ferrimagnetic Fe 3 O 4 phase. These opposing effects compete with each other, resulting in a decrease in global magnetization with increasing the annealing temperature. The desirable magnetic properties are achieved for the sample annealed at 250 °C. For all samples investigated, we observed an increase in low field magnetization at low temperatures after the sample is field cooled in the presence of a 1T magnetic field, which we attribute to the ordering of macro-spins of the weakly ordered antiferromagnetic α-Fe 2 O 3 phase in the presence of the cooling field. Our study will pave the way for determining the optimal conditions to enhance the magnetic characteristics in iron oxide nanorods, which will enable its use in spintronics and biomedical applications.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Ion velocity effect governs damage annealing process in defective KTaO 3

Effects of electronic to nuclear energy losses (S e /S n ) ratio on damage evolution in defective KTaO 3 have been investigated by irradiating pre-damaged single crystal KTaO 3 with intermediate energy O ions (6 MeV, 8 MeV and 12 MeV) at 300 K. By exploring these processes in pre-damaged KTaO 3 containing a fractional disorder level of 0.35, the results demonstrate the occurrence of a precursory stage of damage production before the onset of damage annealing process in defective KTaO 3 that decreases with O ion energy. The observed ionization-induced annealing process by ion channeling analysis has been further mirrored by high resolution transmission electron microscopy analysis. In addition, the reduction of disorder level is accompanied by the broadening of the disorder profiles to greater depth with increasing ion fluence, and enhanced migration is observed with decreasing O ion energy. Since S e (~3.0 keV nm –1 ) is nearly constant for all 3 ion energies across the pre-damaged depth, the difference in behavior is due to the so-called 'velocity effect': the lower ion velocity below the Bragg peak yields a confined spread of the electron cascade and hence an increased energy deposition density. Here, the inelastic thermal spike calculation has further confirmed the existence of a velocity effect, not previously reported in KTaO 3 or very scarcely reported in other materials for which the existence of ionization-induced annealing has been reported. In other words, understanding of ionization-induced annealing has been advanced by pointing out that ion velocity effect governs the healing of pre-existing defects, which may have significant implication for the creation of new functionalities in KTaO 3 through atomic-level control of microstructural modifications, but may not be limited to KTaO 3 .

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2024

Enhancing quantum annealing accuracy through replication-based error mitigation *

Abstract Quantum annealers like those manufactured by D-Wave Systems are designed to find high quality solutions to optimization problems that are typically hard for classical computers. They utilize quantum effects like tunneling to evolve toward low-energy states representing solutions to optimization problems. However, their analog nature and limited control functionalities present challenges to correcting or mitigating hardware errors. As quantum computing advances towards applications, effective error suppression is an important research goal. We propose a new approach called replication based mitigation (RBM) based on parallel quantum annealing (QA). In RBM, physical qubits representing the same logical qubit are dispersed across different copies of the problem embedded in the hardware. This mitigates hardware biases, is compatible with limited qubit connectivity in current annealers, and is well-suited for currently available noisy intermediate-scale quantum annealers. Our experimental analysis shows that RBM provides solution quality on par with previous methods while being more flexible and compatible with a wider range of hardware connectivity patterns. In comparisons against standard QA without error mitigation on larger problem instances that could not be handled by previous methods, RBM consistently gets better energies and ground state probabilities across parameterized problem sets.

Djidjev, Hristo N. (ORCID:0000000192868824)↗

DOE OSTI2023

Lower Bounds on Quantum Annealing Times

The adiabatic theorem provides sufficient conditions for the time needed to prepare a target ground state. While it is possible to prepare a target state much faster with more general quantum annealing protocols, rigorous results beyond the adiabatic regime are rare. Here, we provide such a result, deriving lower bounds on the time needed to successfully perform quantum annealing. The bounds are asymptotically saturated by three toy models where fast annealing schedules are known: the Roland and Cerf unstructured search model, the Hamming spike problem, and the ferromagnetic p-spin model. Our bounds demonstrate that these schedules have optimal scaling. Herein, our results also show that rapid annealing requires coherent superpositions of energy eigenstates, singling out quantum coherence as a computational resource.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2021

Post-growth annealing effects on charge and spin excitations in ND 2-x Ce x CuO 4

We report a Cu K- and L 3 -edge resonant inelastic x-ray scattering study of charge and spin excitations of bulk Nd 2-x Ce x CuO 4 , with focus on post-growth annealing effects. For the parent compound Nd 2 CuO 4 (x = 0), a clear charge-transfer gap is observed in the as-grown state, whereas the charge excitation spectra indicate that electrons are doped in the annealed state. This is consistent with the observation that annealed thin-film and polycrystalline samples of RE 2 CuO 4 (RE = rare earth) can become metallic and superconducting at sufficiently high electron concentrations without Ce doping. For x = 0.16, a Ce concentration for which it is known that oxygen reduction destroys long-range antiferromagnetic order and induces superconductivity, we find that the high-energy spin excitations of non-superconducting as-grown and superconducting annealed crystals are nearly identical. This finding is in stark contrast to the significant changes in the low-energy spin excitations previously observed via neutron scattering

36 MATERIALS SCIENCE↗

DOE OSTI2023

Scalable manufacturing of quantum light emitters in silicon under rapid thermal annealing

Quantum light sources play a fundamental role in quantum technologies ranging from quantum networking to quantum sensing and computation. The development of these technologies requires scalable platforms, and the recent discovery of quantum light sources in silicon represents an exciting and promising prospect for scalability. The usual process for creating color centers in silicon involves carbon implantation into silicon, followed by rapid thermal annealing. However, the dependence of critical optical properties, such as the inhomogeneous broadening, the density, and the signal-to-background ratio, on centers implantation steps is poorly understood. We investigate the role of rapid thermal annealing on the dynamic of the formation of single color centers in silicon. We find that the density and the inhomogeneous broadening greatly depend on the annealing time. We attribute the observations to nanoscale thermal processes occurring around single centers and leading to local strain fluctuations. Our experimental observation is supported by theoretical modeling based on first principles calculations. The results indicate that annealing is currently the main step limiting the scalable manufacturing of color centers in silicon.

42 ENGINEERING↗

DOE OSTI2025

Impact of high-temperature annealing on hafnia-silica composite coatings deposited via ion beam sputtering for high-peak power 1064 nm lasers

The maximum power handling fluence of high-peak and average power laser systems is often limited by the laser damage of the coatings on optical components. Furthermore, these multilayer dielectric coatings are limited in their maximum power handling due to laser-damage-prone defects in the lower optical bandgap, higher optical index material. Some of these defects can be mitigated by thermal annealing to high temperatures, which can greatly reduce the linear absorbative precursors. Typically, hafnia and silica are the materials of choice for high-peak and average power laser systems in the ultraviolet through infrared spectral range; however, hafnia crystalizes readily when annealed at high temperatures. In this study, we prepare composite HfO 2 -SiO 2 coatings by co-sputtering hafnia and silica in an ion beam sputtering system and compare them to pure hafnia-based coatings. We demonstrate that crystallinity in hafnia can be completely suppressed when it is mixed with silica, such as the composite coatings in this study. High reflectors were fabricated and annealed, demonstrating that the multilayer dielectric stacks can survive high-temperature annealing and exhibit an excellent linear absorption of 0.2 +/- 1 ppm at 1064 nm. Short- and long-pulse laser damage was explored, demonstrating the complex relationship between linear absorption and the non-linear absorption which drives pulsed laser damage. These results provide an excellent route to the creation of very low linear absorption optical coatings, which also utilize low scattering materials that are best suited for high-peak and average power applications.

Harthcock, Colin [Lawrence Livermore National Labo↗

DOE OSTI2020

Microstructure study of U–35 wt.% Zr alloy after quick annealing at 650 °C

Uranium-35wt.%zirconium (U-35wt.%Zr) alloy was annealed for 1 hour and 24 hours at 650 ºC and characterized to understand the early stage microstructure evolution. Dendritic microstructure with fine (~300 nm in length) α-U precipitates clustered between dendrite branches were observed in the 1-hour annealed sample. After 24-hour annealing 650 ºC, the α-U precipitates coarsened, and the dendritic microstructure disappeared due to microstructure homogenization. Furthermore, microchemical homogenization observed with Energy-Dispersive X-ray Spectroscopy analysis suggests that α-U precipitates are approaching thermodynamic equilibrium in the 24-hour annealed sample. The findings from this study have potential impacts on the manufacturing and computer modeling of metallic nuclear fuel.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

DOE OSTI2023

Surface properties and RF performance of Vapor Diffused Nb3Sn on Nb after sequential anneals below 1000 °C

Nb3Sn is a next-generation superconducting material that can be used for future superconducting radiofrequency (SRF) accelerator cavities, promising better performance, cost reduction, and higher operating temperature than Nb. The Sn vapor diffusion method is currently the most preferred and successful technique to coat niobium cavi-ties with Nb3Sn. Among post-coating treatments to opti-mize the coating quality, higher temperature annealing without Sn is known to degrade Nb3Sn because of Sn loss. We have investigated Nb3Sn/Nb samples briefly annealed at 800-1000 °C for 10 and 20 minutes to poten-tially improve the surface to enhance the performance of Nb3Sn-coated cavities. Following the sample studies, a coated single-cell cavity was sequentially annealed at 900 °C and tested its performance each time, improving the cavity's quality factor relatively. This paper summarizes the sample studies and discusses the RF test results from sequentially annealed SRF Nb3Sn/Nb cavity.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2025

Impact of Annealing on the Chemical and Superconducting Properties of Ta Thin Films

Tantalum thin films are annealed to dissolve the surface oxide. The effect of annealing is studied using material characterization tools, XPS and TOF-SIMS, and electrical transport measurements of the annealed films are taken using standard PPMS methods to correlate with the surface chemistry. Annealing dissociates the surface oxide, and the oxygen produced diffuses into the thin film. The introduction of oxygen reduces the quality of the thin film, as shown by the suppression of Tc and a reduction in RRR.

Shinde, Maithilee [IIT, Chicago]↗

NASA NTRS1973

Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon

Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.

Jones, C. E.↗

NASA NTRS1975

Deformation and annealing study of Nicraly

Extensive experiments were carried out on the ODS alloy Nicraly, (an alloy prepared by mechanical alloying and consolidating a powder blend consisting of 16% chromium, 4% aluminum, 2-3% yttria, balance nickel), in efforts to develop methods of controlling the grain size and grain shape of the material. The experiments fell into two general categories: variations in the annealing parameters using the as-extruded material as it was received, and various thermomechanical processing schedules (various combinations of cold work and annealing). Success was achieved in gaining grain size and grain shape control by annealing of the as-extruded material. By proper selection of annealing temperature and cooling rates, the grain size of the as-received material was increased almost two orders of magnitude (from an average grain dimension of 0.023 mm to 1.668 mm) while the aspect ratio was increased by some 50% (from 20:1 to 30:1). No success was achieved in gaining significant control of the grain size and shape of the material by thermo-mechanical processing.

Trela, D. M.↗

NASA NTRS1978

Annealing of GaAs solar cells damaged by electron irradiation

Measurements of thermal annealing of GaAlAs/GaAs solar cells damaged by 1 MeV electron irradiation are reported, and the magnitude of the short-circuit current recovery is discussed. The damaged cells are annealed in a vacuum at 200 C. A cell irradiated at 10 to the 13th power electrons per sq cm recovers all its lost short-circuit current after 15 hours of annealing. Possible application of the annealing process to solar cells in space is also considered.

Walker, G. H.↗

NASA NTRS1979

CO2 laser annealing of 50-microns-thick silicon solar cells

A test program is conducted to determine thin solar cell annealing effects using a laser energy source. A CO2 continuous-wave laser was used in annealing experiments on 50 micrometers-thick silicon solar cells after proton irradiation. Test cells were irradiated to a fluence of 1.0 x 10 to the 12th power protons/sq cm with 1.9 MeV protons. After irradiation, those cells receiving full proton dosage were degraded by an average of 30% in output power. In annealing tests laser beam exposure times on the solar cell varied from 2 seconds to 16 seconds reaching cell temperatures of from 400 C to 500 C. Under those conditions annealing test results showed recovery in cell output power of from 33% to 90%.

Walker, F. E.↗