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DOE OSTI2025

Decoupling Li out-diffusion and surface diffusion in the lithiation-assisted epitaxial growth of lithium tungstate

Lithiation-assisted epitaxy offers a flexible and robust approach for synthesizing high-quality Li-containing materials and interfaces with precise control. Here, in this study, we use lithium tungstate (Li x WO 3+x/2 , where x = 0 to 2) as a model system to investigate the intertwined effects of Li out-diffusion-induced compositional changes and surface-diffusion-induced morphological changes. By systematically varying synthesis and processing conditions, we uncover their impact on lithium tungstate film formation. Comprehensive characterizations, including X-ray diffraction, atomic force microscopy, X-ray photoemission spectroscopy and time-of-flight secondary ion mass spectrometry, reveal that low-temperature growth (< 300 °C) followed by high-temperature annealing yields continuous lithium tungstate films with significantly reduced surface roughness. In contrast, high-temperature deposition (≥ 300 °C) accelerates surface diffusion and Li out-diffusion, leading to island formation. Furthermore, in situ scanning transmission electron microscopy demonstrates the beam sensitivity of Li 2 WO 4 and reveals a phase transition from Li 2 WO 4 to LiWO 3.5 under prolonged electron beam exposure. These findings deepen our understanding of how to control composition and morphology of Li-containing films, providing valuable insights for the design and integration of energy materials.

Shi, Jueli [Pacific Northwest National Laboratory ↗

NASA NTRS1982

Pre- and post-annealing of mechanical damage in silicon wafers

Basic properties of mechanical damage in silicon consisting of cracks and abrasion were studied using transmission electron microscopy. The crystallographic structure of mechanical damage was determined before and after high temperature annealing. The main findings include that stresses in silicon around crack tips are not plastically relieved at room temperature and that abrasion at room temperature introduces shear loops into the silicon. It was also found that cracks of micron size can be annealed out, specifically, if cleavage occurs on 111 planes. The healing products of such cracks are 60 deg and 90 deg dislocations. Submicron cracks transform into stacking faults during annealing. Likewise high concentrations of shear loops due abrasion were found to anneal into stacking faults. A one to one correlation between surface areas containing small cracks and stacking faults was made. Measurements of damage removal on silicon surfaces through chemical-mechanical etching techniques are presented. It is shown that silicon dioxide repolishes damaged silicon surfaces most effectively.

Schwottke, G. H.↗

DOE OSTI2021

Molecular Weight Dependence of Block Copolymer Micelle Fragmentation Kinetics

The effect of molecular weight (M) on the fragmentation kinetics of micelles formed by 1,2-polybutadiene-block-poly(ethylene oxide) (PB-PEO) copolymers was studied in the ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide. A series of six samples, with total M ranging from 10 4 to 10 5 g mol –1 and nearly constant composition (f PEO ≈ 0.4), were examined; all six formed spherical micelles with PEO coronas. Nonequilibrium PB-PEO micelles were prepared by direct dissolution, a process that systematically produces nanoparticles with mean aggregation numbers more than twice the equilibrium values. When subjected to high temperature annealing (170 °C), the average micelle radius was found to decrease substantially, as determined by temperature-jump dynamic light scattering (T-jump DLS) and time-resolved small-angle X-ray scattering (TR-SAXS). Furthermore, the characteristic fragmentation times (τ) were found to increase strongly with increasing degree of polymerization N, as τ ~ N 1.8 . This result compares favorably with the prediction of a previously untested model.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2021

Understanding the Reactions Between Fe and Se Binary Diffusion Couples

Spurred by recent discoveries of high-temperature superconductivity in Fe-Se based materials, the magnetic, electronic, and catalytic properties of iron-chalcogenides have drawn significant attention. Furthermore, much remains to be understood about the sequence of phase formation in these systems. In this work, we shed light on this issue by preparing a series of binary Fe-Se ultrathin diffusion couples via designed thin film precursors and investigating their structural evolution as a function of composition and annealing temperature. Two previously unreported Fe-Se phases crystallized during the deposition process on a nominally room-temperature Si substrate in the 27-33% and 37-47% Fe (atomic percent) composition regimes. Both phases completely decompose after annealing to 200°C in a nitrogen glovebox. At higher temperatures, the sequence of phase formation is governed by Se loss in the annealing process, consistent with what would be expected from the phase diagram. Films rich in Fe (53-59% Fe) crystalized during deposition as β-FeSe (P4/nmm) with preferred c-axis orientation to the amorphous SiO 2 substrate surface, providing a means to non-epitaxial self-assembly of crystallographically aligned, iron-rich β-FeSe for future research. Our findings suggest the crystallization of binary Fe-Se compounds at room temperature via near diffusionless transformations should be a significant consideration in future attempts to prepare metastable ternary and higher order compounds containing Fe and Se.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Cold air quench control of local crystallization environment in fully air-processed carbon-based perovskite solar cells

Carbon-based perovskite solar cells (C-PSCs) present a low-cost route to efficient photovoltaic technology. Gas quenching is an essential process commonly used for solvent extraction in scalable module fabrication using solution processes, but film quality remains highly sensitive to the localized environmental processing temperature, especially during intermediate phase transitions before perovskite film high temperature annealing. In this study, we introduce a cold air quench strategy to precisely control the local crystallization temperature that simultaneously promotes uniform crystallization and facilitates strain relaxation in fully air-processed C-PSCs. It is found that implementing dry air at 10 °C as the quenching gas yields a champion power conversion efficiency (PCE) of 20.52 %, with preferential (110) orientation and reduced, homogenized in-plane strain. This newly developed technique of a cost-effective low temperature air quenching process also enhances carrier lifetime, reduces interface recombination, and improves charge extraction. Furthermore, this work presents cold air quenching as a scalable, economic method to control perovskite crystallization and strain in C-PSC fabrication, advancing the industrial viability of high-performance perovskite modules.

14 SOLAR ENERGY↗

NASA NTRS1984

Development of improved low-strain creep strength in Cabot alloy R-41 sheet

The feasibility of improving the low-strain creep properties of a thin gauge nickel base sheet alloy through modified heat treatment or through development of a preferred crystal-lographic texture was investigated. The basic approach taken to improve the creep strength of the material by heat treatment was to increase grain size by raising the solution treatment temperature for the alloy to the range of 1420 K to 1475 K (2100 F to 2200 F). The key technical issue involved was maintenance of adequate tensile ductility following the solutioning of M6C primary carbides during the higher temperature solution treatment. The approach to improve creep properties by developing a sheet texture involved varying both annealing temperatures and the amount of prior cold work. Results identified a heat treatment for alloy R-14 sheet which yields a substantial creep-life advantage at temperatures above 1090 K (1500 F) when compared with material given the standard heat treatment. At the same time, this treatment provides reasonable tensile ductility over the entire temperature range of interest. The mechanical properties of the material given the new heat treatment are compared with those for material given the standard heat treatment. Attempts to improve creep strength by developing a sheet texture were unsuccessful.

Rothman, M. F.↗

NASA NTRS1984

Metal-support interactions during the adsorption of CO on thin layers and islands of epitaxial palladium

Islands and continuous layers of palladium were grown in an ultrahigh vacuum on substrates of Mo(110)c(14 x 7)-O, designated MoO(x), and of clean Mo(110). It was found that as-deposited islands and layers exhibited bulk palladium adsorption properties for CO when deposited at room temperature and for palladium thicknesses in excess of about 3 monolayers. CO adsorption was drastically reduced, however, on annealing. For islands, annealing temperatures of as low as 400 K led to some reduction in CO adsorption whereas more severe reductions were found to occur at 600 K for islands and at 800 K for continuous multilayers. The deactivation depended on the palladium thickness, the substrate species and the extent of thermal treatments. Auger electron spectroscopy, temperature-programmed desorption and Delta-Phi measurements were combined to interpret the deactivation behavior in terms of substrate-support interactions involving the diffusion of substrate species towards the palladium surface.

Park, C.↗

NASA NTRS1986

Photo Hall-effect characterization of closely compensated Ge:Be

The temperature dependence of the free-carrier concentration in germanium doped with the double acceptor Be has been investigated using the photo Hall-effect technique and found to be strongly temperature dependent when the residual shallow impurities are closely compensated. Close compensation of shallow levels was achieved by controlling the concentration of a beryllium-hydrogen acceptor complex A(Be,H) which is present in crystals grown under a H2 atmosphere. This complex can be removed with high-temperature annealing. An increase of up to two orders of magnitude in free-carrier lifetime as a function of temperature is found to occur between 5 and 11 K in closely compensated material due to the population inversion of ionized centers created by optical pumping.

Germer, T. A.↗

DOE OSTI2021

Tunable Atomic Layer Deposition into Ultra-High-Aspect-Ratio (>60000:1) Aerogel Monoliths Enabled by Transport Modeling

Atomic layer deposition (ALD) modification of ultra-high-aspect-ratio structures (>10,000:1) is a powerful platform with applications in catalysis, filtration, and energy conversion. However, the deposition of conformal and tunable ALD coatings at these aspect ratios remains challenging, resulting in empirical tradeoffs between precursor utilization and reaction time. Here, we demonstrate tunable control of the ALD infiltration depth into an aerogel monolith (AM) and develop a reaction-diffusion model to accurately describe the coating process. Specifically, we investigate the ALD exposure time and precursor dose needed to conformally coat a silica AM with pore sizes of ~20 nm, a monolith thickness of ~2.5 mm, and aspect ratios exceeding 60,000:1. We demonstrate complete infiltration into the AM, which is quantified by elemental mapping. A reaction-diffusion model is developed, which accounts for multiple doses and precursor depletion in the ALD chamber during an exposure step. The experimentally validated model enables the prediction and tuning of infiltration depth into a tortuous, high-aspect-ratio structure such as an AM, allowing for the synthesis of rationally designed material architectures. Additionally, the model allows for co-optimization of the total deposition time and percentage of unreacted precursor, which are important for the manufacturability and sustainability of ALD processing. Lastly, we demonstrate that ultra-thin ALD Al 2 O 3 coatings can be used to stabilize silica AMs against structural degradation under high-temperature annealing conditions (700-800 °C), by limiting changes in surface area and monolith volume. As a result, this improved high-temperature stability has implications for numerous aerogel applications, including catalysis and thermal insulation.

14 SOLAR ENERGY↗

DOE OSTI2023

Surface properties and RF performance of Vapor Diffused Nb3Sn on Nb after sequential anneals below 1000 °C

Nb3Sn is a next-generation superconducting material that can be used for future superconducting radiofrequency (SRF) accelerator cavities, promising better performance, cost reduction, and higher operating temperature than Nb. The Sn vapor diffusion method is currently the most preferred and successful technique to coat niobium cavi-ties with Nb3Sn. Among post-coating treatments to opti-mize the coating quality, higher temperature annealing without Sn is known to degrade Nb3Sn because of Sn loss. We have investigated Nb3Sn/Nb samples briefly annealed at 800-1000 °C for 10 and 20 minutes to poten-tially improve the surface to enhance the performance of Nb3Sn-coated cavities. Following the sample studies, a coated single-cell cavity was sequentially annealed at 900 °C and tested its performance each time, improving the cavity's quality factor relatively. This paper summarizes the sample studies and discusses the RF test results from sequentially annealed SRF Nb3Sn/Nb cavity.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2023

Surface Properties and RF Performance of Vapor Diffused Nb3Sn on NB After Sequential Anneals Below 1000°C

Nb3Sn is a next-generation superconducting material that can be used for future superconducting radiofrequency (SRF) accelerator cavities, promising better performance, cost reduction, and higher operating temperature than Nb. The Sn vapor diffusion method is currently the most preferred and successful technique to coat niobium cavi-ties with Nb3Sn. Among post-coating treatments to opti-mize the coating quality, higher temperature annealing without Sn is known to degrade Nb3Sn because of Sn loss. We have investigated Nb3Sn/Nb samples briefly annealed at 800-1000°C for 10 and 20 minutes to poten-tially improve the surface to enhance the performance of Nb3Sn-coated cavities. Following the sample studies, a coated single-cell cavity was sequentially annealed at 900°C and tested its performance each time, improving the cavity's quality factor relatively. This paper summarizes the sample studies and discusses the RF test results from sequentially annealed SRF Nb3Sn/Nb cavity.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2021

Remediating neutron damage in large area planar Ge-DSSD with amorphous germanium contacts through annealing and pulse-height correction

Large area, position sensitive planar germanium detectors offer new opportunities in -ray spectroscopy. For in-beam studies remediating neutron damage is important. This work studied a mechanically cooled circular planar 9 × 1 cm wafer with orthogonal 16 × 16 amorphous germanium strip electrodes. Before neutron irradiation the wafer was heated in-cryostat to above 373 K for more than 24 h in order to test the robustness of the contacts and the mechanical cooler. No deterioration in performance was observed. The detector was then exposed to controlled doses of 2.2 MeV neutrons, produced from the 7 Li(p,n) 7 Be reaction until substantial damage was observed. Averaged over the surface of the wafer, a flux of 1.9(1) x 10 9 n/cm 2 was delivered. The detector then survived thermal cycling and 350 K (~77°C) annealing for 70 h which substantially reduced hole trapping. pulse-height correction is investigated to further mitigate the neutron damage. Higher temperature annealing at 365 K was not successful.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2024

Design of Advanced Thin-Film Catalysts for Electrooxidation of Formic Acid

Successful development of catalysts for electrochemical formic acid oxidation (FAO) requires finding an optimal balance between catalytic performance (activity, stability, and selectivity) and catalyst cost. While platinum is one of the most active catalyst materials for FAO, it suffers from performance loss at low overpotentials due to poisoning with CO, which is one of the intermediates formed in the so-called indirect path of FAO. In this work, we explored the synergistic effects of the supporting material and annealing temperature on the performance of Pt thin films for FAO in acidic media. Compared to the as-prepared Pt films, the annealed films show up to 5-fold and 15-fold improvement for FAO on Pt@Ni and Pt@Cr, respectively. In conclusion, while the most active Pt@Ni thin film shows the lowest stability, the most active Pt@Cr thin film is also the most stable, challenging conventional trade-offs in electrocatalysis and providing a promising candidate for FAO nanocatalyst synthesis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2026

Influence of rolling reduction and annealing on recrystallization and grain structure in Ta-2.5W alloys

The microstructural evolution of wrought Tantalum - 2.5 wt% Tungsten (Ta-2.5W) alloys during thermomechanical processing is critical for optimizing their mechanical reliability in demanding applications such as aerospace, chemical processing, and nuclear technology. Despite the widespread use of Ta-W alloys, a comprehensive understanding of how rolling reduction, annealing temperature, and elemental inhomogeneity interact to determine recrystallization behavior and grain refinement remains incomplete. Here, in this study, we systematically investigate the effects of cold rolling and subsequent annealing on the microstructure of Ta-2.5W, with particular attention to grain orientation, stored energy, and elemental banding. Our results demonstrate that higher rolling reduction rates lower the onset and completion temperatures for recrystallization, resulting in finer and more homogeneous grain structures. Electron backscatter diffraction (EBSD) analysis reveals that grains with a 〈111〉 parallel to the plate normal possess higher stored energy and nucleate recrystallization more readily than grains with a 〈001〉 parallel to the plate normal. Elemental mapping shows that tungsten inhomogeneity leads to localized bands of accelerated recrystallization and hardness variation. These findings provide new insights into the mechanisms of microstructure refinement in Ta-2.5W alloys, offering guidance for tailoring processing routes to achieve superior performance in demanding engineering environments.

Annealing↗

DOE OSTI2025

Superior plastic flow stability of self-patterned carbide – amorphous ceramic nanostructures

Amorphous ceramics and carbides exhibit superb strength but poor plasticity. Here, we synthesized TiC-SiOC nanostructures with TiC-nanocarbides embedded in amorphous ceramic SiOC by co-sputtering followed by high-temperature annealing and/or irradiation. TiC-SiOC nanostructures exhibit high strength and good plastic flow stability even after heavy irradiation, 7 GPa at room temperature and 3.6 GPa at 700 ℃ with a uniform strain of about 10%∼18%. The uniform deformation is accommodated by the shearing of amorphous ceramic and the rotation of nanocarbides. Nanocarbides inhibit the propagation of shear banding in amorphous SiOC, and amorphous-crystal interfaces act as sinks to manage irradiation-induced defects.

36 MATERIALS SCIENCE↗

NASA NTRS1992

The crystallization and crystalline properties of LARC-TPI

LARC-TPI, a thermoplastic polyimide, has been studied in order to develop an understanding of its crystalline phase transition. Our experiments suggest that samples synthesized in different laboratories apparently had different degrees of imidization and their thermal behaviors differed accordingly. When the most crystalline of these polyimides was studied in some detail, we found that it melted irreversibly in that once a sample was completely melted it would not recrystallize. A polymer that did not recrystallize displayed a glass transition, which increased in temperature upon subsequent cooling and reheating. Solubility experiments indicated that heating above the crystalline melting temperature led to network formation in the polymer, a conclusion that is consistent with other behavior just mentioned. Differential calorimetric studies revealed that annealing at slow heating rates or under isothermal conditions resulted in dual melting transitions. These studies, supported by X-ray diffraction results, strongly indicate that the annealing process involves a solid-liquid-solid transformation. From an existing phenomenological model for the kinetics of phase transitions, kinetic parameters for these crystallizations have been evaluated. The Avrami exponents n increased with the annealing temperature in the protocol used in this study. Their values were about 2 or lower, thus indicating that crystallization may have followed a mechanism that included heterogeneous nucleation of a low dimensional order in which all the embryonic crystallites formed at the beginning of the process. A positive temperature coefficient for these crystallizations indicated that diffusion may have had a rate controlling influence and affected the values of n.

Theil, Michael H.↗

NASA NTRS1981

Stuffed MO layer as a diffusion barrier in metallizations for high temperature electronics

Auger electron spectroscopy was employed to characterize the diffusion barrier properties of molybdenum in the CrSi2/Mo/Au metallization system. The barrier action of Mo was demonstrated to persist even after 2000 hours annealing time at 300 C in a nitrogen ambient. At 340 C annealing temperature, however, rapid interdiffusion was observed to have occurred between the various metal layers after only 261 hours. The presence of controlled amounts of oxygen in the Mo layer is believed to be responsible for suppressing the short circuit interdiffusion between the thin film layers. Above 340 C, its is believed that the increase in the oxygen mobility led to deterioration of its stuffing action, resulting in the rapid interdiffusion of the thin film layers along grain boundaries.

Boah, J. K.↗

DOE OSTI2023

High-Temperature Air Stability of Electrodeposited Copper Cobalt Oxide and Copper Manganese Oxide Absorber Coatings for Concentrating Solar Power

The solar absorptance of a thermal receiver surface significantly affects the photothermal conversion efficiency of concentrating solar power (CSP) plants. The stability of solar receivers and coatings applied to improve solar absorptance at high temperatures is critical for efficient and long-term operation. This study analyzes the high-temperature air stability of multiscale fractal textured electrodeposited copper manganese oxide and copper cobalt oxide solar receiver coatings over a range of temperatures. The study also investigates the effect of high temperature on phase stability, chemical and morphological evolution, and the optical properties of the two solar absorber materials. A computational model is developed to determine the absorptance of the textured absorbers and is shown to match the experimental measurements closely over a range of heat treatment temperatures from 450 °C to 850 °C and durations up to 100 h. Degradation curves and coating stability maps are developed from the study. Copper manganese oxide and copper cobalt oxide coatings exhibit good thermal stability up to ~815 °C and 630 °C, respectively, with minimal changes in their optical and structural properties with thermal efficiency greater than 90%. Furthermore, the study offers valuable insights into the high-temperature annealing effects on the optical and structural properties of multiscale copper alloyed coatings fabricated by electrodeposition and presents a means of designing the optimal temperature range for maximizing absorber efficiency in practical applications.

14 SOLAR ENERGY↗