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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Indium phosphide shallow homojunction solar cells made by metalorganic chemical vapor deposition

The fabrication of highly efficient indium phosphide solar cells by metalorganic chemical vapor deposition is reported. Since InP can be annealed at temperatures at low as approximately 100 C and the annealing occurs under solar illumination itself, this accomplishment is relevant to space power systems. A total area air mass zero efficiency of 17.9 percent and an air mass 1.5 efficiency of 20.4 percent are reported. Electrical characterization identifying loss mechanisms is made, and a shallow homojunction design is discussed along with possible improvements.

Spitzer, M. B.↗
NASA NTRS1981

Defect chemistry and characterization Hg(1-x)Cd(x)Te

Iodine doped single crystal samples of mercury cadmium telluride were annealed at temperatures varying from 450 C to 600 C in Hg vapor and quenched to room temperature. Hall effect measurements at 77 K on the crystals cooled to room temperature indicate the samples to be n-type after anneals at high Hg pressures whereas they turn p-type after anneals at low Hg pressures; the electron concentration increases with increase in Hg pressure. The results are explained on the basis that the crystals are saturated with (Hg,Cd)I2, with a fraction of the iodine being present as donor occupying tellurium lattice sites and a fraction being present as acceptors resulting from the iodine on tellurium lattice sites pairing with the doubly ionized native acceptor defects. The solubility of the donor species increases with increase in Hg pressure, whereas that of the acceptor species increases with decrease in Hg pressure. Equilibrium constants for the incorporation of the iodine species as well as the pairing reaction were established.

Vydyanath, H. R.↗
NASA NTRS1988

Annealing results on low-energy proton-irradiated GaAs solar cells

AlGaAs/GaAs solar cells with an approximately 0.5-micron-thick Al(0.85)Ga(0.15)As window layer were irradiated using normal and isotropic incident protons having energies between 50 and 500 keV with fluence up to 1 x 10 to the 12th protons/sq cm. The irradiated cells were annealed at temperatures between 150 and 300 C in nitrogen ambient. The annealing results reveal that significant recovery in spectral response at longer wavelengths occurred. However, the short-wavelength spectral response showed negligible annealing, irrespective of the irradiation energy and annealing conditions. This indicates that the damage produced near the AlGaAs/GaAs interface and the space-charge region anneals differently than damage produced in the bulk. This is explained by using a model in which the as-grown dislocations interact with irradiation-induced point defects to produce thermally stable defects.

Kachare, R.↗
NASA NTRS1989

Oxide scale stresses in polycrystalline Ni200

An X-ray diffraction method has been successfully used to measure the oxidation stresses at room temperature in annealed and electropolished samples of polycrystalline Ni200 coupons oxidized in the temperature range 760 to 982 C for 4 h. The stresses on the free surface of the oxide were compressive and the average stress through the thickness normal to the oxide layer was found to be tensile. Surface stresses on the oxides formed at temperatures up to 927 C were found to be isotropic and both surface stresses and the average normal stress increased with increasing temperature of oxidation. At 982 C, the surface stresses were lower and this was attributed to the deformation and fracture of oxide layer resulting in stress relation.

Jayaraman, N.↗
NASA NTRS2015

Crystallization Kinetics of Calcium-magnesium Aluminosilicate (CMAS) Glass

The crystallization kinetics of a calcium-magnesium aluminosilicate (CMAS) glass with composition relevant for aerospace applications, like air-breathing engines, were evaluated using differential thermal analysis (DTA) in powder and bulk forms. Activation energy and frequency factor values for crystallization of the glass were evaluated. X-ray diffraction (XRD) was used to investigate the onset of crystallization and the phases that developed after heat treating bulk glass at temperatures ranging from 690 to 960 deg for various times. Samples annealed at temperatures below 900 deg remained amorphous, while specimens heat treated at and above 900 deg exhibited crystallinity originating at the surface. The crystalline phases were identified as wollastonite (CaSiO3) and aluminum diopside (Ca(Mg,Al) (Si,Al)2O6). Scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were employed to examine the microstructure and chemical compositions of crystalline phases formed after heat treatment.

X-ray diffraction (XRD)↗
NASA NTRS1985

The feasibility of silicon on garnet technology

The feasibility of combining silicon and magnetic bubble technologies is demonstrated. Functional MOSFETs have been fabricated on top of bubble films coated with 1-micron thick SiO2 layers. The large grain silicon necessary for these devices is obtained by laser recrystallization of polycrystalline silicon (polysilicon). The laser-recrystallization process causes changes in the magnetic properties of the bubble film; however, these changes can be reversed by subsequent thermal anneals. The required temperature treatments after laser annealing are compatible with the MOSFET fabrication process.

Rasky, P. H. L.↗
NASA NTRS1994

Midfit dislocation generation mechanisms in InGaAs/GaAs heterostructures

An experimental investigation of misfit dislocation generation mechanisms at an InGaAs/GaAs heterointerface is reported. InGaAs epitaxial layers were grown by low-pressure oragnometallic vapor-phase epitaxy on patterned and unpatterned GaAs substrate having etch-pit densities (EPD) of 200, 1400, and 10,000 cm(exp -2). After epitaxial growth, the samples were annealed at temperatures between 650 and 750 C, and analyzed by optical and transmission electron microscopy. For the range of substrate EPD studied, it was found that the substrate EPD controls the onset of misfit dislocation generation for low-temperature epitaxy (less than 600 C) on unpatterned substrates. When epilayers were annealed at 750 C, the density of misfit dislocations was independent of the substrate EPD. These studies also show that the dominant misfit dislocation generation mechanism for films grown on patterned substrates is nucleation at the growth-mesa edge. The density of preexisting threading dislocations has little influence on misfit dislocation generation for films selectively deposited within 100 x 100 sq micrometer growth windows. For selective heteroepitaxy, misfit dislocation generation strongly depends on the crystallographic orientation of the growth-mesa edge.

Kui, J.↗
NASA NTRS1983

The effect of annealing on the creep of plasma sprayed ceramics

The creep of plasma sprayed ZrO2-8Y2O3 was measured at temperatues from 98 to 1250 C (180 to 220 F), and compared to creep of identical samples after annealing at temperatures from 98 to 1316 C (1800 to 2400 F). Loads and temperatures which produced significant creep of as sprayed ceramics produced no creep after annealing.

Hendricks, R. C.↗
NASA NTRS1993

Surface areas and porosities of ices used to simulate stratospheric clouds

Surface areas, bulk densities, and porosities of ices formed at 85 or 200 K are measured to study the morphology of the vapor-deposited ices that have been used to simulate ice clouds in the laboratory. Surface areas are measured from the Brunauer, Emmett, and Teller (BET) analysis of absorption isotherms obtained at 72.2 K. Bulk densities and porosities are determined photogrammetrically. Results show that water ice and HNO3-H2O ice films deposited from the vapor at temperatures below 200 K exhibit large BET surface areas and are highly porous. For the ices annealed at temperatures above 200 K, external surface areas calculated from the observed particle sizes agree reasonably well with the BET areas, which indicates that the annealed ices are composed of nonporous particles and that the porosity of these ices is due to interstices among the particles.

Keyser, Leon F.↗
NASA NTRS1995

Hydrogen Annealing Of Single-Crystal Superalloys

Annealing at temperature equal to or greater than 2,200 degrees F in atmosphere of hydrogen found to increase ability of single-crystal superalloys to resist oxidation when subsequently exposed to oxidizing atmospheres at temperatures almost as high. Supperalloys in question are principal constituents of hot-stage airfoils (blades) in aircraft and ground-based turbine engines; also used in other high-temperature applications like chemical-processing plants, coal-gasification plants, petrochemical refineries, and boilers. Hydrogen anneal provides resistance to oxidation without decreasing fatigue strength and without need for coating or reactive sulfur-gettering constituents. In comparison with coating, hydrogen annealing costs less. Benefits extend to stainless steels, nickel/chromium, and nickel-base alloys, subject to same scale-adhesion and oxidation-resistance considerations, except that scale is chromia instead of alumina.

Smialek, James L.↗
NASA NTRS1999

Wide Temperature Characteristics of Transverse Magnetically Annealed Amorphous Tapes for High Frequency Aerospace Magnetics

100 kHz core loss and magnetization properties of sample transverse magnetically annealed, cobalt-based amorphous and iron-based nanocrystalline tape wound magnetic cores are presented over the temperature range of -150 to 150 C, at selected values of B(sub peak). For B-fields not close to saturation, the core loss is not sensitive to temperature in this range and is as low as seen in the best MnZn power ferrites at their optimum temperatures. Frequency resolved characteristics are given over the range of 50 kHz to 1 MHz, at B(sub peak) = 0.1 T and 50 C only. A linear permeability model is used to interpret and present the magnetization characteristics and several figures of merit applicable to inductor materials arc reviewed. This linear modeling shows that, due to their high permeabilities, these cores must he gapped in order to make up high Q or high current inductors. However, they should serve well, as is, for high frequency, anti ratcheting transformer applications.

Niedra, Janis M.↗
NASA NTRS1981

Ohmic contacts to GaAs for high-temperature device applications

Ohmic contacts to n-type GaAs were developed for high temperature device applications up to 300 C. Refractory metallizations were used with epitaxial Ge layers to form the contacts: TiW/Ge/GaAs, Ta/Ge/GaAs, Mo/Ge/GaAs, and Ni/Ge/GaAs. Contacts with high dose Si or Se ion implantation of the Ge/GaAs interface were also investigated. The contacts were fabricated on epitaxial GaAs layer grown on N+ or semi-insulating GaAs substrates. Ohmic contact was formed by both thermal annealing (at temperatures up to 700 C) and laser annealing (pulsed Ruby). Examination of the Ge/GaAs interface revealed Ge migration into GaAs to form an N+ doping layer. The specific contact resistances of specimens annealed by both methods are given.

Anderson, W. T., Jr.↗
NASA NTRS1987

Development of improved p-type silicon-germanium alloys

Annealing experiments in the temperature range 1100-1275 C have been performed on p-type Si(0.8)Ge(0.2) samples with BP, B(6.5)P, and GaSb material additives. Both electrical resistivity and Seebeck coefficient generally decrease for these samples as annealing temperature is increased, with thermoelectric power factor sometimes being improved by annealing.

Mclane, George↗
NASA NTRS1986

Lithium-Counterdoped Solar Cells

Resistance to damage by energetic electrons increased. Lithiumcounterdoped cells produce more output power than presently-used, conventional n + p silicon cells, after irradiation by MeV electrons. In addition to possessing increased radiation resistance, lithium-counterdoped silicon solar cells show significant performance restoration when annealed at temperature of 100 degrees C. Performances compared after irradiation with 1-MeV electrons. Lithium-counterdoped solar cell offers potential for in situ annealing in space. Process increases electrical power available from solar-cell array during use in space missions subject to degrading particulate environment of space.

Weinberg, I.↗
NASA NTRS1990

Stabilization of high T(sub c) phase in bismuth cuprate superconductor by lead doping

It has widely been ascertained that doping of lead in Bi:Sr:Ca:Cu:O systems promotes the growth of high T(sub c) (110 K) phase, improves critical current density, and lowers processing temperature. A systematic investigation is undertaken to determine optimum lead content and processing conditions to achieve these. A large number of samples with cationic compositions of Bi(2-x)Pb(x)Sr2Ca2Cu3 (x = 0.2 to 2.0) were prepared by conventional solid state reaction technique. Samples of all compositions were annealed together at a temperature and characterized through resistance-temperature (R-T) measurements and x ray diffraction (XRD) to determine the zero resistance temperature, T(sub c)(0) and to identify presence of phases, respectively. The annealing temperature was varied between 790 C to optimize processing parameters. Results are given. In brief, an optimum process is reported along with composition of leaded bismuth cuprate superconductor which yields nearly a high T(sub c) single phase with highly stable superconducting properties.

Gupta, Ram. P.↗
NASA NTRS1991

Stabilization of high Tc phase in bismuth cuprate superconductor by lead doping

It has been widely ascertained that doping of lead in Bi-Sr-Ca-Cu-O systems promotes the growth of high T sub c (110 K) phase, improves critical current density, and lowers processing temperature. A systematic study was undertaken to determine optimum lead content and processing conditions to achieve these properties. A large number of samples with cationic compositions of Bi(2-x)Pb(x)Sr2Ca2Cu3 (x = 0.2 to 2.0) were prepared by conventional solid state reaction technique. Samples of all compositions were annealed together at a temperature and characterized through resistance temperature (R-T) measurements and x ray diffraction to determine the zero resistance temperature, T sub c(0) and to identify presence of phases, respectively. The annealing temperature was varied between 790 and 880 C to optimize processing parameters. Results are given. In brief, an optimum process is reported along with composition of leaded bismuth cuprate superconductor which yields nearly a high T sub c single phase with highly stable superconducting properties.

Gupta, Ram. P.↗
NASA NTRS1982

Blanket technology

It was concluded that systems requirements would force a reassessment of the conventional approach to interconnecting cells into blanket or array modules. Defense applications (hardening) were identified as the key requirement that would force a movement away from the standard method (solder) of forming array circuits. The panel also agreed that requirements associated with the impending NASA Space Station and in-bound missions would lead to alternative interconnecting approaches. It was concluded that the diverse requirements of future space missions (high temperature and extended thermal cycling) might not be met by one approach, such as parallel-gap resistance welding. The panel suggested that other options such as high temperature solders and brazing be considered for the various mission requirements that were anticipated. The panel agreed that blanket technology was potentially suitable for in-orbit annealing to temperatures of 200 C provided that conventional soldered connecting techniques were replaced by "welding".

Scott-Monck, J.↗