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3D-Printed Boron Nitride Catalytic Monoliths for Oxidative Dehydrogenation of Propane
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Atomically dispersed cerium sites in carbon-doped boron nitride for photodriven CO[subscript 2] redu
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Atomic layer deposited boron nitride nanoscale films act as high temperature hydrogen barriers
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Transformation of boron nitride from cubic to hexagonal under 1-atm helium
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Optical and acoustic phonons in turbostratic and cubic boron nitride thin films on diamond substrates
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Boron nitride enhanced electric insulation paper for extending transformer thermal life
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Neutron radiation induced transmutation of boron to lithium in aluminum-boron nitride composite
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Hexagonal boron nitride: Epitaxial growth and device applications
As a newest family member of the III-nitrides, BN is considered amongst the remaining frontiers in wide energy bandgap semiconductors with potentials for technologically significant applications in deep UV (DUV) optoelectronics, solid-state neutron detectors, electron emitters, single photon emitters, switching/memory devices, and super-capacitors. It was shown that it is possible to produce h-BN epilayers with high hexagonal phase purity, UV transparency, and film stoichiometry by employing nitrogen-rich growth conditions. The quasi-2D nature of h-BN supports unusually strong optical transitions near the band edge and a large exciton binding energy on the order of 0.7 eV. Since the isotope of B-10 has a large capture cross-section for thermal neutrons, h-BN is an ideal material for the fabrication of solid-state neutron detectors for special nuclear materials detection, well and geothermal logging, and medical imaging applications. Freestanding B-10 enriched h-BN (h- 10 BN) epilayers with varying thicknesses up to 200 μm have been successfully synthesized by metal organic chemical vapor deposition (MOCVD) as of this writing. By utilizing the conductivity anisotropy nature of h-BN, 1 cm 2 lateral detectors fabricated from 100 μm thick h-10BN epilayers have demonstrated a detection efficiency of 59% for thermal neutrons, which is the highest on record among all solid-state neutron detectors as of today. It was noted that high growth temperatures, long growth times and the use of sapphire substrate tend to incorporate oxygen related impurities into h- 10 BN epilayers, which strongly impacted the carrier mobility-lifetime (μτ) products and charge collection efficiencies of h- 10 BN neutron detectors. As the h-BN material technology further develops, improved carrier mobilities and μτ products will allow the fabrication of h-BN devices with enhanced performance.
Diffusion Monte Carlo Study on Relative Stabilities of Boron Nitride Polymorphs
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Dynamic Interplay of Nonlocal Recombination Pathways in Quantum Emitters in Hexagonal Boron Nitride
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