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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Ultrafast CMOS image sensors and data-enabled super-resolution for multimodal radiographic imaging and tomography

We summarize recent progress in ultrafast Complementary Metal Oxide Semiconductor (CMOS) image sensor development and the application of neural networks for post-processing of CMOS and charge-coupled device (CCD) image data to achieve sub-pixel resolution (thus $super$-$resolution$). The combination of novel CMOS pixel designs and data-enabled image post-processing provides a promising path towards ultrafast high-resolution multi-modal radiographic imaging and tomography applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

A review of quantum imaging methods and enabling technologies

The field of quantum imaging has recently seen an explosion of new methods and techniques. At the heart of most quantum imaging approaches are three enabling technologies: the source of the quantum light, the detectors that turn sensing into imaging, and the method by which the quantum nature of light is leveraged to improve the desired measurement. This review addresses the dominant and emerging technologies in each of these components as well as details concerning the implementations of various quantum imaging methods.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Calibration of the underground muon detector of the Pierre Auger Observatory

To obtain direct measurements of the muon content of extensive air showers with energy above 10 16.5 eV, the Pierre Auger Observatory is currently being equipped with an underground muon detector (UMD), consisting of 219 10 m 2 -modules, each segmented into 64 scintillators coupled to silicon photomultipliers (SiPMs). Direct access to the shower muon content allows for the study of both of the composition of primary cosmic rays and of high-energy hadronic interactions in the forward direction. As the muon density can vary between tens of muons per m 2 close to the intersection of the shower axis with the ground to much less than one per m 2 when far away, the necessary broad dynamic range is achieved by the simultaneous implementation of two acquisition modes in the read-out electronics: the binary mode, tuned to count single muons, and the ADC mode, suited to measure a high number of them. In this work, we present the end-to-end calibration of the muon detector modules: first, the SiPMs are calibrated by means of the binary channel, and then, the ADC channel is calibrated using atmospheric muons, detected in parallel to the shower data acquisition. The laboratory and field measurements performed to develop the implementation of the full calibration chain of both binary and ADC channels are presented and discussed. The calibration procedure is reliable to work with the high amount of channels in the UMD, which will be operated continuously, in changing environmental conditions, for several years.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Gas puff imaging on the TCV tokamak

We present the design and operation of a suite of Gas Puff Imaging (GPI) diagnostic systems installed on the Tokamak à Configuration Variable (TCV) for the study of turbulence in the plasma edge and Scrape-Off-Layer (SOL). These systems provide the unique ability to simultaneously collect poloidal 2D images of plasma dynamics at the outboard midplane, around the X-point, in both the High-Field Side (HFS) and Low-Field Side (LFS) SOL, and in the divertor region. We describe and characterize an innovative control system for deuterium and helium gas injection, which is becoming the default standard for the other gas injections at TCV. Extensive pre-design studies and the different detection systems are presented, including an array of avalanche photodiodes and a high-speed CMOS camera. First results with spatial and time resolutions of up to ≈2 mm and 0.5 µs, respectively, are described, and future upgrades of the GPI diagnostics for TCV are discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Tunneling electroresistance effects in epitaxial complex oxides on silicon

Complex oxide-based ferroelectric tunnel junctions (FTJs) show excellent nonvolatile memory characteristics promising for emerging technology. However, integration of these epitaxially grown FTJs electrically with a silicon substrate remains challenging due to their incompatible lattice structures and poor electronic interfaces resulting from the direct synthesis techniques. Here, we present an epitaxial SrRuO 3 /PbZr 0.2 Ti 0.8 O 3 /SrRuO 3 FTJ integrated electrically with a doped silicon substrate after a layer transfer process. The tunnel currents of the FTJ on silicon show a large tunneling electroresistance (~1×10 5 %) effect, which is explained by a numerical FTJ model incorporating pinned dipoles at the interfaces. This proof of concept of the integration of functional oxide heterostructures with silicon opens a pathway to beyond-CMOS computing devices using unconventional materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Unlocking AlN Piezoelectric Performance with Earth‐Abundant Dopants

Abstract The increasing demand for high‐performance piezoelectric materials and toxicity and thermal stability issues of the widely used lead zirconate titanates (PZT) have spurred a search for better alternatives in electronic devices. In comparison to PZT, group III nitrides such as aluminum nitride (AlN), are only weakly piezoelectric, but doping AlN with scandium (Sc) improves the piezoelectric response by nearly 500%. Relative to PZT, doped‐AlN piezoelectric materials are advantageous because they are far more compatible with complementary metal–oxide–semiconductor (CMOS) materials, and they maintain both piezoelectric and thermodynamic stability up to very high temperatures. Unfortunately, rare‐earth metals are notoriously expensive, and fabricating stable films with rare‐earth dopants is also challenging, limiting their use in industrial applications. In this work, ab initio calculations are combined with targeted fabrication and experimentation to identify alternative earth‐abundant dopants for AlN from the periodic table d‐block. Amongst the 23 elements screened, it is found that group IVB metals, titanium, zirconium, and hafnium induce large piezoelectric enhancements comparable to Sc. This improvement is traced to shifts in the atomic sublattice structure and changes in the local charge states. In demonstrating a highly accessible and affordable path for technological adaptation of AlN‐based piezoelectrics, this work provides the foundation for sustainable, next‐generation electronics.

Startt, Jacob↗
DOE OSTI2022

Progress toward picosecond on-chip magnetic memory

Here, we offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ~3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ~6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.

42 ENGINEERING↗
DOE OSTI2022

All‐Polymer Bulk‐Heterojunction Organic Electrochemical Transistors with Balanced Ionic and Electronic Transport

Abstract The rapid development of organic electrochemical transistor (OECTs)‐based circuits brings new opportunities for next‐generation integrated bioelectronics. The all‐polymer bulk‐heterojunction (BHJ) offers an attractive, inexpensive alternative to achieve efficient ambipolar OECTs, and building blocks of logic circuits constructed from them, but have not been investigated to date. Here, the first all‐polymer BHJ‐based OECTs are reported, consisting of a blend of new p‐type ladder conjugated polymer and a state‐of‐the‐art n‐type ladder polymer. The whole ladder‐type polymer BHJ also proves that side chains are not necessary for good ion transport. Instead, the polymer nanostructures play a critical role in the ion penetration and transportation and thus in the device performance. It also provides a facile strategy and simplifies the fabrication process, forgoing the need to pattern multiple active layers. In addition, the development of complementary metal–oxide–semiconductor (CMOS)‐like OECTs allows the pursuit of advanced functional logic circuitry, including inverters and NAND gates, as well as for amplifying electrophysiology signals. This work opens a new approach to the design of new materials for OECTs and will contribute to the development of organic heterojunctions for ambipolar OECTs toward high‐performing logic circuits.

Chemistry↗
DOE OSTI2022

An Experimental Investigation of Supercritical Methane Injection Characteristics in a CO2 Environment

Abstract Clean energy generation is gaining significant attention from industries, academia, and governments across the globe. The Allam cycle is one such technology that has been under focus due to its efficiency, environmental friendliness, and economics. This is a direct-fired cycle operating at supercritical conditions using carbon dioxide as a working fluid. Fuel or oxidizer jet mixing with CO2 is a vital phenomenon that governs combustion efficiency, and it is not well understood for the Allam cycle conditions. This paper experimentally investigated the jet characteristics of a methane jet injected into a subcritical to supercritical carbon dioxide environment. A wide range of injection pressures and temperatures were targeted between subcritical to supercritical conditions. Unlike previous studies, the current work focused on injecting lower-density (methane) jets into higher-density (carbon dioxide) environments. Schlieren imaging and methane absorption measurements were simultaneously performed with a CMOS high-speed camera and a 3.39 μm infrared laser. Specifically, we looked at the classical injection parameter of jet spreading angle, which was classically established to be mainly a density ratio function. Here, the jet cone angle was obtained from the postprocessed schlieren imaging. The jet cone angle is a critical characteristic parameter that describes the entrainment rate in a jet; thus, it is a crucial parameter in understanding the nature of the jet. The laser measurements were only used as an additional check to confirm the entry time of methane into the chamber filled with carbon dioxide. Notably, this paper makes a detailed comparison between the jet cone angles of jets with a density ratio. The result showed that the classical correlations, such as Abramovich's theory applied to submerged turbulent gas jets developed for low-density ratio jets, were unsuitable for higher-density ratio jets. It was also observed that the divergence angles were dependent not only on density ratio but also on other parameters such as pressure ratios and reduced pressures.

Engineering↗
DOE OSTI2022

36 Hz integral linewidth laser based on a photonic integrated 4.0 m coil resonator

Laser stabilization sits at the heart of many precision scientific experiments and applications, including quantum information science, metrology, and atomic timekeeping. Many of these systems narrow the laser linewidth and stabilize the carrier by use of Pound–Drever–Hall (PDH) locking to a table-scale, ultrahigh quality factor (Q), vacuum spaced Fabry–Perot reference cavity. Integrating these cavities to bring characteristics of PDH stabilization to the chip scale is critical to reducing their size, cost, and weight, and enabling a wide range of portable and system-on-chip applications. We report a significant advance in integrated laser linewidth narrowing, stabilization, and noise reduction by use of a photonic integrated 4.0 m long coil resonator to stabilize a semiconductor laser. We achieve a 36 Hz 1 / π <#comment/> -integral linewidth, Allan deviation of 1.8 × <#comment/> 10 − <#comment/> 13 at 10 ms measurement time, and a 2.3 kHz/s drift—to the best of our knowledge, the lowest integral linewidth and highest stability demonstrated for an integrated waveguide reference cavity. This performance represents over an order of magnitude improvement in integral linewidth and frequency noise over previous integrated waveguide PDH stabilized reference cavities and bulk-optic and integrated injection locked approaches, and over two orders of magnitude improvement in frequency and phase noise than integrated injection locked approaches. Two different wavelength coil designs are demonstrated, stabilizing lasers at 1550 nm and 1319 nm. The resonator is bus-coupled to a 4.0 m long coil, with a 49 MHz free spectral range, mode volume of 1.0 × <#comment/> 10 10 µ <#comment/> m 3 , and 142 million intrinsic Q , fabricated in a CMOS compatible, ultralow loss silicon nitride waveguide platform. Our measurements and simulations show that the thermorefractive noise floor for this particular cavity is reached for frequencies down to 20 Hz in an ambient environment with simple passive vibration isolation and without vacuum or thermal isolation. The thermorefractive noise limited performance is estimated to yield an 8 Hz 1 / π <#comment/> -integral linewidth and Allan deviation of 5 × <#comment/> 10 − <#comment/> 14 at 10 ms, opening a stability regime that heretofore has been available only in fundamentally non-integrated systems. These results demonstrate the potential to bring the characteristics of laboratory-scale stabilized lasers to the integrated, wafer-scale compatible chip scale, and are of interest for a number of applications in quantum technologies and atomic, molecular, and optical physics, and with further developments below 10 Hz linewidth, can be highly relevant to ultralow noise microwave generation.

Liu, Kaikai (ORCID:0000000213609646)↗
DOE OSTI2022

A radiation tolerant clock generator for the CMS endcap timing layer readout chip

Here, we present the test results of a low jitter Phase Locked Loop (PLL) prototype chip for the CMS Endcap Timing Layer readout chip (ETROC). This chip is based on the improved version of a clock synthesis circuit named ljCDR from the Low Power Gigabit Transceiver (lpGBT) project. The ljCDR is tested in its PLL mode. An automatic frequency calibration (AFC) block with the Triple Modular Redundancy (TMR) register is developed for the LC-oscillator calibration. The chip was manufactured in a 65 nm CMOS process with 10 metal layers. The chip has been extensively tested, including Total Ionizing Dose (TID) testing up to 300 Mrad and Single Event Upset (SEU) testing with heavy ions possessing a Linear Energy Transfer (LET) from 1.3 to 62.5 MeV × cm 2 /mg.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology

This abstract presents a comprehensive analysis of total ionizing dose (TID) response in GlobalFoundries’ 12LP 12nm bulk FinFET technology using 10keV X-rays. Devices with higher threshold voltages (VTs) demonstrated lower increases in off-state leakage current (IDS,OFF) post-irradiation, highlighting the mitigating role of high VT in TID response. Our data shows that transistors with fewer fins exhibit superior TID resistance, implying lower susceptibility to radiation effects. Our study also probed two bias conditions, "Gate-On" and "Pass-Gate," with the former displaying more severe TID degradation. Interestingly, p-type devices displayed negligible degradation, underscoring their inherent resilience to TID effects. Additionally, medium thick n-type devices echoed the fin-count-dependent TID response observed in other transistor types, further strengthening our findings. These results underscore the importance of strategic transistor selection and design for enhancing the TID resilience of future CMOS FinFET architectures, particularly critical in radiation-intense environments.

42 ENGINEERING↗
DOE OSTI2020

Advanced CMOS Reliability Update: Sub 20nm FinFET Assessment

Advances in FinFET design and fabrication enable manufacturing of denser, more compact integrated circuits (ICs) with substantially reduced leakage while shortening the channel-lengths. The same stress-induced leakage and breakdown degradation mechanisms that affect planar transistors also impact FinFET devices. Reliability concerns such as Bias Temperature Instability (BTI), Time Dependent Dielectric Breakdown (TDDB), and Hot Carrier Injection (HCI) become very important with changes to transistor geometry and fin sidewall crystal orientation. Recent testing has shown that FinFETs respond differently to radiation (radiation effects such as total ionizing dose) when compared to planar transistors. These reliability and radiation effects issues become very important when changing transistor geometry and scaling FinFETs towards smaller feature sizes (22-nm, 16-nm, 14- nm, 10-nm, and smaller critical dimensions). The comparable 2019 state of the art transistor densities in current high-volume manufacturing silicon-based foundries is 7-nm (ISMC, Samsung) and 10-nm (Intel) [www.anandtech.com,fuse.wikichip.org]. Released products include supporting components for the cellphone and commercial microprocessor markets respectively. Extensive development in the foundry industry is driving to a 5-nm technology node in late 2020.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Compact single-shot soft X-ray photon spectrometer for free-electron laser diagnostics

The photon spectrum from free-electron laser (FEL) light sources offers valuable information in time-resolved experiments and machine optimization in the spectral and temporal domains. We have developed a compact single-shot photon spectrometer to diagnose soft X-ray spectra. The spectrometer consists of an array of off-axis Fresnel zone plates (FZP) that act as transmission-imaging gratings, a Ce:YAG scintillator, and a microscope objective to image the scintillation target onto a two-dimensional imaging detector. This spectrometer operates in segmented energy ranges which covers tens of electronvolts for each absorption edge associated with several atomic constituents: carbon, nitrogen, oxygen, and neon. The spectrometer’s performance is demonstrated at a repetition rate of 120 Hz, but our detection scheme can be easily extended to 200 kHz spectral collection by employing a fast complementary metal oxide semiconductor (CMOS) line-scan camera to detect the light from the scintillator. This compact photon spectrometer provides an opportunity for monitoring the spectrum downstream of an endstation in a limited space environment with sub-electronvolt energy resolution.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication

Atomic precision advanced manufacturing (APAM) dopes silicon with enough carriers to change its electronic structure and can be used to create novel devices by defining metallic regions whose boundaries have single-atom abruptness. Incompatibility with the thermal and lithography process requirements for gated silicon transistor manufacturing have inhibited exploration of both how APAM can enhance CMOS performance and how transistor manufacturing steps can accelerate the discovery of new APAM device concepts. In this work, we introduce an APAM process that enables direct integration into the middle of a transistor manufacturing workflow. We show that a process that combines sputtering and annealing with a hardmask preserves a defining characteristic of APAM, a doping density far in excess of the solid solubility limit, while trading another, the atomic precision, for compatibility with manufacturing. The electrical characteristics of a chip combining a transistor with an APAM resistor show that the APAM module has only affected the transistor through the addition of a resistance and not by altering the transistor. This proof-of-concept demonstration also outlines the requirements and limitations of a unified APAM tool, which could be introduced into manufacturing environments, greatly expanding access to this technology and inspiring a new generation of devices with it.

Chemical vapor deposition↗
DOE OSTI2023

Direct Visualization of Charge Migration in Bilayer Tantalum Oxide Films by Multimodal Imaging

Inspired by biological neuromorphic computing, artificial neural networks based on crossbar arrays of bilayer tantalum oxide memristors have shown to be promising alternatives to conventional complementary metal-oxide-semiconductor (CMOS) architectures. In order to understand the driving mechanism in these oxide systems, tantalum oxide films are resistively switched by conductive atomic force microscopy (C-AFM), and subsequently imaged by kelvin probe force microscopy (KPFM) and spatially resolved time-of-flight secondary ion mass spectrometry (ToF-SIMS). These workflows enable induction and analysis of the resistive switching mechanism as well as control over the resistively switched region of the film. In this work it is shown that the resistive switching mechanism is driven by both current and electric field effects. Reversible oxygen motion is enabled by applying low (<1 V) electric fields, while high electric fields generate irreversible breakdown of the material (>1 V). Fully understanding oxygen motion and electrical effects in bilayer oxide memristor systems is a fundamental step toward the adoption of memristors as a neuromorphic computing technology.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Narrowband microwave-photonic notch filters using Brillouin-based signal transduction in silicon

Abstract The growing demand for bandwidth makes photonic systems a leading candidate for future telecommunication and radar technologies. Integrated photonic systems offer ultra-wideband performance within a small footprint, which can naturally interface with fiber-optic networks for signal transmission. However, it remains challenging to realize narrowband (∼MHz) filters needed for high-performance communications systems using integrated photonics. In this paper, we demonstrate all-silicon microwave-photonic notch filters with 50× higher spectral resolution than previously realized in silicon photonics. This enhanced performance is achieved by utilizing optomechanical interactions to access long-lived phonons, greatly extending available coherence times in silicon. We use a multi-port Brillouin-based optomechanical system to demonstrate ultra-narrowband (2.7 MHz) notch filters with high rejection (57 dB) and frequency tunability over a wide spectral band (6 GHz) within a microwave-photonic link. We accomplish this with an all-silicon waveguide system, using CMOS-compatible fabrication techniques.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Slow-Light Mid-IR Silicon Photonic Chips for NO 2 and CH 4 Gas Detection

A compact, chip-scale mid-infrared gas sensor is demonstrated, leveraging a two-dimensional photonic crystal waveguide (PCW) fabricated on a silicon-on-insulator (SOI) platform. The PCW comprises a hexagonal lattice with lattice constant a = 860 nm and hole radius r = 0.22a, incorporating a central line defect of reduced-radius holes (r s = 0.7r) to induce slow-light propagation near the photonic band edge with a group index of approximately 73, thereby enhancing light-matter interaction. The sensor operates at fundamental absorption wavelengths of 3.42 μm for nitrogen dioxide (NO 2 ) and 3.40 μm for methane (CH 4 ), utilizing the strongest molecular vibrational transitions for maximum sensitivity. Experimental validation was conducted using dynamically diluted gas mixtures generated by mass flow controllers, with signal acquisition performed by a liquid nitrogen-cooled InSb detector. For NO 2 , the sensor exhibited excellent linear response over 5–25 ppm (part per million) with coefficient of determination R 2 = 0.9934, achieving a detection limit of 210 ppb (part per billion)─representing the first reported silicon photonic-based NO 2 detection. For CH 4 , exposure to 25 ppm resulted in a 6.4% decrease in transmitted intensity, demonstrating multigas sensing capability. The CMOS-compatible fabrication process and compact 3 mm device footprint establish this SOI-PCW platform as a scalable, low-power solution for integrated mid-infrared gas sensing, with significant potential for environmental monitoring and industrial safety applications.

Crystals↗