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At least 163 records · Page 9

All sources NASA NTRS DOE OSTI

NASA NTRS1977

Circuit Methods for VLF Antenna Couplers

The limitations of different E-field antenna coupler or preamplifier circuits are presented. All circuits were evaluated using actual Loran or Omega signals. Electric field whip or wire antennas are the simplest types which can be used for reception of VLF signals in the 10 to 100 kHz range. JFET or MOSFET transistors provide impedance transformation and some voltage gain in simple circuits where the power for operating the preamplifier uses the same coaxial cable that feeds the signal back to the receiver. The circuit techniques provide useful alternative methods for Loran-Omega receiver system designers.

Burhans, R. W.↗

NASA NTRS1978

A continuously pulsed copper halide laser with a cable-capacitor Blumlein discharge circuit

Experimental characteristics of a continuously pulsed copper halide laser with a cable-capacitor Blumlein discharge circuit are reported. Quartz laser tubes 1 m in length and 1.5 and 2.5 cm in diameter were employed to study the effects of the electrical circuit, lasant, and buffer gas on laser performance. Measured properties of the Blumlein circuit are compared with an analytic solution for an idealized circuit. Both CuCl and CuBr with neon and helium buffer gas were studied. A maximum average power of 12.5 W was obtained with a 1.5 nF capacitor charged to 8 kV and discharged at 31 kHz with CuCl and neon buffer gas at 0.7 kPa in a 2.5-cm-diam tube. A maximum efficiency of 0.72 percent was obtained at 9 W average power. Measurements of the radial distribution of the power in the laser beam and the variation of laser power at 510.6 and 578.2 nm with halide vapor density are also reported. Double and continuously pulsed laser characteristics are compared, and the role of copper metastable level atoms in limiting the laser pulse energy density is discussed.

Nerheim, N. M.↗

NASA NTRS1980

Leveling circuits and crustal movements

An investigation of further possible vertical crustal movements in the Western United States made with circuit microclosure analysis is presented. The San Andreas fault in Cal., the Nevada seismic zone in Nev., and the Sierra Nevada in Calif. were studied based on supposition that in areas undergoing crustal movement the misclosure for a particular circuit should have the smallest value when the circuit is formed from the most temporarily homogeneous survey data; it should have larger, predictable values when the circuit is closed with surveys conducted at other times. Leveling surveys along the San Andreas fault and the Nevada seismic zone are discussed, noting the possibility of regional tilting in the Great Basin between 1934 and 1955, and of elevation changes in the Northern Nevada Range using results of leveling surveys between Roseville, Cal. and Reno, Nev.

Chi, S. C.↗

NASA NTRS1980

Transient solution for megajoule energy release in a lumped-parameter series RLC circuit

A method is developed for optimizing the energy release from a megajoule capacitive discharge in a series RLC circuit with an RL load. Both the resistance and inductance of the load are represented by effective values that characterize their behavior during the discharge. Using Kirchhoff's laws, equations utilizing the load impedance and the external circuit impedance are derived for determining the instantaneous load voltage and energy characteristics. A program (ERES) computes and displays the load characteristics and the circuit current. Use of the ERES program allows a designer to perturbate values of the circuit elements in order to produce the desired time distribution for the load energy input.

Barnes, G.↗

NASA NTRS1981

Direct current ballast circuit for metal halide lamp

A direct current ballast circuit for a two electrode metal halide lamp is described. Said direct current ballast circuit includes a low voltage DC input and a high frequency power amplifier and power transformer for developing a high voltage output. The output voltage is rectified by diodes and filtered by inductor and capacitor to provide a regulated DC output through commutating diodes to one terminal of the lamp at the output terminal. A feedback path from the output of the filter capacitor through the bias resistor to power the high frequency circuit which includes the power amplifier and the power transformer for sustaining circuit operations during low voltage transients on the input DC supply is described. A current sensor connected to the output of the lamp through terminal for stabilizing lamp current following breakdown of the lamp is described.

Lutus, P.↗

NASA NTRS1983

Solid-State dc Circuit Breaker

Circuit breaker with no moving parts protects direct-current (dc) loads. Current which circuit breaker opens (trip current) is adjustable and so is time delay before breaker trips. Forward voltage drop rises from 0.6 to 1.2 V as current rises to trip point. Breaker has two terminals, like fuse, therefore replaces fuse in dc circuit. Powered by circuit it protects and reset by either turning off power source or disconnecting load.

Harvey, P.↗

NASA NTRS1984

LEC GaAs for integrated circuit applications

Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

Kirkpatrick, C. G.↗

NASA NTRS1984

Soft-error generation due to heavy-ion tracks in bipolar integrated circuits

Both bipolar and MOS integrated circuits have been empirically demonstrated to be susceptible to single-particle soft-error generation, commonly referred to as single-event upset (SEU), which is manifested in a bit-flip in a latch-circuit construction. Here, the intrinsic characteristics of SEU in bipolar (static) RAM's are demonstrated through results obtained from the modeling of this effect using computer circuit-simulation techniques. It is shown that as the dimensions of the devices decrease, the critical charge required to cause SEU decreases in proportion to the device cross-section. The overall results of the simulations are applicable to most integrated circuit designs.

Zoutendyk, J. A.↗

NASA NTRS1988

Difference-Equation/Flow-Graph Circuit Analysis

Numerical technique enables rapid, approximate analyses of electronic circuits containing linear and nonlinear elements. Practiced in variety of computer languages on large and small computers; for circuits simple enough, programmable hand calculators used. Although some combinations of circuit elements make numerical solutions diverge, enables quick identification of divergence and correction of circuit models to make solutions converge.

Mcvey, I. M.↗

NASA NTRS1988

Protective Socket For Integrated Circuits

Socket for intergrated circuits (IC's) protects from excessive voltages and currents or from application of voltages and currents in wrong sequence during insertion or removal. Contains built-in switch that opens as IC removed, disconnecting leads from signals and power. Also protects other components on circuit board from transients produced by insertion and removal of IC. Makes unnecessary to turn off power to entire circuit board so other circuits on board continue to function.

Wilkinson, Chris↗

NASA NTRS1988

Simulation of proton-induced energy deposition in integrated circuits

A time-efficient simulation technique was developed for modeling the energy deposition by incident protons in modern integrated circuits. To avoid the excessive computer time required by many proton-effects simulators, a stochastic method was chosen to model the various physical effects responsible for energy deposition by incident protons. Using probability density functions to describe the nuclear reactions responsible for most proton-induced memory upsets, the simulator determines the probability of a proton hit depositing the energy necessary for circuit destabilization. This factor is combined with various circuit parameters to determine the expected error-rate in a given proton environment. An analysis of transient or dose-rate effects is also performed. A comparison to experimental energy-disposition data proves the simulator to be quite accurate for predicting the expected number of events in certain integrated circuits.

Fernald, Kenneth W.↗

NASA NTRS1988

Integrated circuit reliability testing

A technique is described for use in determining the reliability of microscopic conductors deposited on an uneven surface of an integrated circuit device. A wafer containing integrated circuit chips is formed with a test area having regions of different heights. At the time the conductors are formed on the chip areas of the wafer, an elongated serpentine assay conductor is deposited on the test area so the assay conductor extends over multiple steps between regions of different heights. Also, a first test conductor is deposited in the test area upon a uniform region of first height, and a second test conductor is deposited in the test area upon a uniform region of second height. The occurrence of high resistances at the steps between regions of different height is indicated by deriving the measured length of the serpentine conductor using the resistance measured between the ends of the serpentine conductor, and comparing that to the design length of the serpentine conductor. The percentage by which the measured length exceeds the design length, at which the integrated circuit will be discarded, depends on the required reliability of the integrated circuit.

Buehler, Martin G.↗

NASA NTRS1989

A programmable CCD driver circuit for multiphase CCD operation

A programmable CCD (charge-coupled device) driver circuit was designed to drive CCDs in multiphased modes. The purpose of the drive electronics is to operate developmental CCD imaging arrays for NASA's tiltable moderate resolution imaging spectrometer (MODIS-T). Five objectives for the driver were considered during its design: (1) the circuit drives CCD electrode voltages between 0 V and +30 V to produce reasonable potential wells, (2) the driving sequence is started with one input signal, (3) the driving sequence is started with one input signal, (4) the circuit allows programming of frame sequences required by arrays of any size, (5) it produces interfacing signals for the CCD and the DTF (detector test facility). Simulation of the driver verified its function with the master clock running up to 10 MHz. This suggests a maximum rate of 400,000 pixels/s. Timing and packaging parameters were verified. The design uses 54 TTL (transistor-transistor logic) chips. Two versions of hardware were fabricated: wirewrap and printed circuit board. Both were verified functionally with a logic analyzer.

Ewin, Audrey J.↗

NASA NTRS1990

Ge/Si Integrated Circuit For Infrared Imaging

Proposed integrated circuit consists of focal-plane array of metal/germanium Schottky-barrier photodetectors on same chip with silicon-based circuits that processes signals from photodetectors. Made compatible with underlying silicon-based circuitry by growing germanium epitaxially on silicon circuit wafers. Metal deposited in ultrahigh vacuum immediately after growth of germanium. Combination of described techniques results in high-resolution infrared-imaging circuits of superior performance.

Fathauer, Robert W.↗

NASA NTRS1988

The role of power integrated circuits in lightweight spacecraft

This paper will present definitions for smart power and power integrated circuits and show how, for a typical planetary spacecraft power system, a 37 percent reduction in mass, 89 percent reduction in parts and a 50 percent reduction in volume can be attained. Also discussed are the technology needs for isolation, monolithic current sensing, and high efficiency switching necessary to enable monolithic power structures, as well as various applications of power integrated circuits. A specific example will verify the projected reductions expected when power integrated circuits are implemented in future spacecraft designs. In conclusion, power-integrated circuits can impact the overall design of the spacecraft in all subsystems, not just the power sybsystem.

Klein, John W.↗

NASA NTRS1991

Microwave integrated circuits for space applications

Monolithic microwave integrated circuits (MMIC), which incorporate all the elements of a microwave circuit on a single semiconductor substrate, offer the potential for drastic reductions in circuit weight and volume and increased reliability, all of which make many new concepts in electronic circuitry for space applications feasible, including phased array antennas. NASA has undertaken an extensive program aimed at development of MMICs for space applications. The first such circuits targeted for development were an extension of work in hybrid (discrete component) technology in support of the Advanced Communication Technology Satellite (ACTS). It focused on power amplifiers, receivers, and switches at ACTS frequencies. More recent work, however, focused on frequencies appropriate for other NASA programs and emphasizes advanced materials in an effort to enhance efficiency, power handling capability, and frequency of operation or noise figure to meet the requirements of space systems.

Leonard, Regis F.↗

NASA NTRS1992

Performance of a Y-Ba-Cu-O superconducting filter/GaAs low noise amplifier hybrid circuit

A superconducting 7.3 GHz two-pole microstrip bandpass filter and a GaAs low noise amplifier (LNA) were combined into an active circuit and characterized at liquid nitrogen temperatures. This superconducting/semiconducting circuit's performance was compared to a gold filter/GaAs LNA hybrid circuit. The superconducting filter/GaAs LNA hybrid circuit showed higher gain and lower noise figure than its gold counterpart.

Bhasin, K. B.↗

NASA NTRS1991

Q-switched laser prelase detection circuit

A compact electronic circuit was developed to detect prelasing in Q-swithed pulsed laser systems and once detected to shut down the laser before the next laser pulse occurs. The circuit is small, compact, and uses a minimum of components which makes it quite economical, thus readily lending itself to commercial applications. It can easily be incorporated into virtually any Q-switched laser system or reliability of a laser system by reducing a source of possible costly optical damage. The circuit operation and instrument requirements necessary to incorporate the circuit into a laser system are discussed.

Lockard, George E.↗