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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

Estimation of Faults in DC Electrical Power System

This paper demonstrates a novel optimization-based approach to estimating fault states in a DC power system. Potential faults changing the circuit topology are included along with faulty measurements. Our approach can be considered as a relaxation of the mixed estimation problem. We develop a linear model of the circuit and pose a convex problem for estimating the faults and other hidden states. A sparse fault vector solution is computed by using 11 regularization. The solution is computed reliably and efficiently, and gives accurate diagnostics on the faults. We demonstrate a real-time implementation of the approach for an instrumented electrical power system testbed, the ADAPT testbed at NASA ARC. The estimates are computed in milliseconds on a PC. The approach performs well despite unmodeled transients and other modeling uncertainties present in the system.

Gorinevsky, Dimitry↗
NASA NTRS2010

NASA Tech Briefs, October 2010

Topics covered include: Hybrid Architecture Active Wavefront Sensing and Control; Carbon-Nanotube-Based Chemical Gas Sensor; Aerogel-Positronium Technology for the Detection of Small Quantities of Organic and/or Toxic Materials; Graphene-Based Reversible Nano-Switch/Sensor Schottky Diode; Inductive Non-Contact Position Sensor; High-Temperature Surface-Acoustic-Wave Transducer; Grid-Sphere Electrodes for Contact with Ionospheric Plasma; Enabling IP Header Compression in COTS Routers via Frame Relay on a Simplex Link; Ka-Band SiGe Receiver Front-End MMIC for Transponder Applications; Robust Optimization Design Algorithm for High-Frequency TWTs; Optimal and Local Connectivity Between Neuron and Synapse Array in the Quantum Dot/Silicon Brain; Method and Circuit for In-Situ Health Monitoring of Solar Cells in Space; BGen: A UML Behavior Network Generator Tool; Platform for Post-Processing Waveform-Based NDE; Electrochemical Hydrogen Peroxide Generator; Fabrication of Single, Vertically Aligned Carbon Nanotubes in 3D Nanoscale Architectures; Process to Create High-Fidelity Lunar Dust Simulants; Lithium-Ion Electrolytes Containing Phosphorous-Based, Flame-Retardant Additives; InGaP Heterojunction Barrier Solar Cells; Straight-Pore Microfilter with Efficient Regeneration; Determining Shear Stress Distribution in a Laminate; Self-Adjusting Liquid Injectors for Combustors; Handling Qualities Prediction of an F-16XL-Based Reduced Sonic Boom Aircraft; Tele-Robotic ATHLETE Controller for Kinematics - TRACK; Three-Wheel Brush-Wheel Sampler; Heterodyne Interferometer Angle Metrology; Aligning Astronomical Telescopes via Identification of Stars; Generation of Optical Combs in a WGM Resonator from a Bichromatic Pump; Large-Format AlGaN PIN Photodiode Arrays for UV Images; Fiber-Coupled Planar Light-Wave Circuit for Seed Laser Control in High Spectral Resolution Lidar Systems; On Calculating the Zero-Gravity Surface Figure of a Mirror; Optical Modification of Casimir Forces for Improved Function of Micro- and Nano-Scale Devices; Analysis, Simulation, and Verification of Knowledge-Based, Rule-Based, and Expert Systems; Core and Off-Core Processes in Systems Engineering; Digital Reconstruction Supporting Investigation of Mishaps; and Template Matching Approach to Signal Prediction.

Source record↗
NASA NTRS2018

QAOA Tutorial Outline

In this tutorial we discuss the quantum alternating operator ansatz (QAOA), which is a variational algorithm that can be used for approximate optimization of combinatorial problems with soft and hard constraints.We go through the design of the quantum circuit and its actual implementation in real hardware, discussing compilation issues such as gate synthesis and scheduling of all the required gates and qubit-swapping overhead.

Venturelli, Davide↗
NASA NTRS2004

Optimization of Thin Film Ferroelectrics for Communication Applications

The application of thin film ferroelectrics for the development of tunable microwave components have been a very active field of investigation thraughout the last decade. This presentation will provide an overview of some of the activities in the aforementioned area by other research groups and the current status of the field. In particular, we will discuss the efforts currently underway at the NASA Glenn Research Center in the area of phase shifter development using Ba2Sr(1-x)TiO3 ferroelectric thin films. Emphasis will be given to the approaches that have been investigated in order to improve the performance (i.e., figure of merit) of these devices. Some of these approaches deal with the details of circuit design parameters, while others are related to Experimental results and discussions on the aforementioned topics will be presented the optimization of material properties through different deposition techniques.

Miranda, Felix A.↗
NASA NTRS2013

Quasi-Linear Circuit

This work involved developing spacequalifiable switch mode DC/DC power supplies that improve performance with fewer components, and result in elimination of digital components and reduction in magnetics. This design is for missions where systems may be operating under extreme conditions, especially at elevated temperature levels from 200 to 300 degC. Prior art for radiation-tolerant DC/DC converters has been accomplished utilizing classical magnetic-based switch mode converter topologies; however, this requires specific shielding and component de-rating to meet the high-reliability specifications. It requires complex measurement and feedback components, and will not enable automatic re-optimization for larger changes in voltage supply or electrical loading condition. The innovation is a switch mode DC/DC power supply that eliminates the need for processors and most magnetics. It can provide a well-regulated voltage supply with a gain of 1:100 step-up to 8:1 step down, tolerating an up to 30% fluctuation of the voltage supply parameters. The circuit incorporates a ceramic core transformer in a manner that enables it to provide a well-regulated voltage output without use of any processor components or magnetic transformers. The circuit adjusts its internal parameters to re-optimize its performance for changes in supply voltage, environmental conditions, or electrical loading at the output

Bradley, William↗
NASA NTRS1995

On the modeling and optimization of Schottky varactor frequency multipliers at submillimeter wavelengths

Schottky varactor frequency multipliers are used to generate local oscillator power at millimeter and submillimeter wavelengths. The equivalent circuit of the Schottky varactor contains a junction capacitance, a junction conductance, a series resistance and a model for electron velocity saturation. A millimeter wavelengths the equivalent circuits is affected by the edge effects, which are due to the small-area circular anode. The correction factors due to the edge effect for the junction capacitance and for the series resistance are available in the literature. In this work the electron velocity saturation is modeled by limiting the velocity of the transition front between the depleted and undepleted layer. By using this model the maximum current of the diode is given by the actual area of the transition front between depleted and undepleted layers, and is therefore related to the capacitance correction factor. The new model has been tested by analyzing a two diode balanced doubler for 160 GHz presented earlier in the literature. The agreement between the theoretical results and the measurements is excellent. The new diode model is useful in optimization of varactors for high millimeter and submillimeter wave frequencies.

TRT-THEORETICAL↗
NASA NTRS1993

A 1.6-kW, 110-kHz dc-dc converter optimized for IGBT's

A full bridge dc-dc converter using a zero-current and zero-voltage switching technique is described. This circuit utilizes the characteristics of the IGBT to achieve power and frequency combinations that are much higher than previously reported for this device. Experimental results are included for a 1.6-kW, 110-kHz converter with 95 percent efficiency.

Chen, Keming↗
NASA NTRS1985

Superstructures and multijunction cells for high efficiency energy conversion

Potential applications of superlattices to photovoltaic structures are discussed. A single-bandgap, multijunction cell with selective electrodes for lateral transport of collected carriers is proposed. The concept is based on similar doping superlattice (NIPI) structures. Computer simulations show that by reducing bulk recombination losses, the spectral response of such cells is enhanced, particularly for poor quality materials with short diffusion lengths. Dark current contributions of additional junctions result in a trade-off between short-circuit current and open-circuit voltage as the number of layers is increased. One or two extra junctions appear to be optimal.

Wagner, M.↗
NASA NTRS1987

Study of free-piston Stirling engine driven linear alternators

The analysis, design and operation of single phase, single slot tubular permanent magnet linear alternator is presented. Included is the no-load and on-load magnetic field investigation, permanent magnet's leakage field analysis, parameter identification, design guidelines and an optimal design of a permanent magnet linear alternator. For analysis of the magnetic field, a simplified magnetic circuit is utilized. The analysis accounts for saturation, leakage and armature reaction.

Nasar, S. A.↗
NASA NTRS2014

Modular Pulsed Plasma Electric Propulsion System for Cubesats

Current capabilities of CubeSats must be improved in order to perform more ambitious missions. Electric propulsion systems will play a key role due to their large specific impulse. Compared to other propulsion alternatives, their simplicity allows an easier miniaturization and manufacturing of autonomous modules into the nano and pico-satellite platform. Pulsed Plasma Thrusters (PPTs) appear as one of the most promising technologies for the near term. The utilization of solid and non-volatile propellants, their low power requirements and their proven reliability in the large scale make them great candidates for rapid implementation. The main challenges are the integration and miniaturization of all the electronic circuitry into a printed circuit board (PCB) that can satisfy the strict requirements that CubeSats present. NASA Ames and the George Washington University have demonstrated functionality and control of three discrete Micro-Cathode Arc Thrusters (CAT) using a bench top configuration that was compatible with the ARC PhoneSat Bus. This demonstration was successfully conducted in a vaccum chamber at the ARC Environmental Test Laboratory. A new effort will integrate a low power Plasma Processing Unit and two plasma thrusters onto a single printed circuit board that will utilize less than 13 U of Bus volume. The target design will be optimized for the accommodation into the PhoneSatEDISON Demonstration of SmallSatellite Networks (EDSN) bus as it uses the same software interface application, which was demonstrated in the previous task. This paper describes the design, integration and architecture of the proposed propulsion subsystem for a planned Technology Demonstration Mission. In addition, a general review of the Pulsed Plasma technology available for CubeSats is presented in order to assess the necessary challenges to overcome further development.

PCB↗
NASA NTRSDate not supplied

On the Moon to Stay: Challenges Presented to Power Electronics Technology by Sustained Operations on the Lunar Surface

NASA’s Artemis Program seeks not only to return humans to the Moon for the first time since the 1970’s but also to provide the technological basis for infrastructure that will enable permanent and expanding scientific and industrial exploitation of the Lunar surface. The primary purpose of this infrastructure is to generate and distribute power to a diverse and growing range of scientific and industrial assets, and the keys to success for this function are power management and control circuits that are highly reliable and maintainable for a decade of operation in the extreme thermal, radiation, and dust environment of the Lunar surface. While various combinations of wide band gap semiconductors, electronic devices, circuit topologies, and shielding schemes have been successfully developed for mission environments ranging from low Earth orbit to the Jovian system, power management technology has not been optimized to meet the full combination of mission requirements for the Lunar surface. To accomplish this, NASA requests the dedicated focus of the power electronics industry.

semiconductors↗
NASA NTRS1993

Multiphase complete exchange: A theoretical analysis

Complete Exchange requires each of N processors to send a unique message to each of the remaining N-1 processors. For a circuit switched hypercube with N = 2(sub d) processors, the Direct and Standard algorithms for Complete Exchange are optimal for very large and very small message sizes, respectively. For intermediate sizes, a hybrid Multiphase algorithm is better. This carries out Direct exchanges on a set of subcubes whose dimensions are a partition of the integer d. The best such algorithm for a given message size m could hitherto only be found by enumerating all partitions of d. The Multiphase algorithm is analyzed assuming a high performance communication network. It is proved that only algorithms corresponding to equipartitions of d (partitions in which the maximum and minimum elements differ by at most 1) can possibly be optimal. The run times of these algorithms plotted against m form a hull of optimality. It is proved that, although there is an exponential number of partitions, (1) the number of faces on this hull is Theta(square root of d), (2) the hull can be found in theta(square root of d) time, and (3) once it has been found, the optimal algorithm for any given m can be found in Theta(log d) time. These results provide a very fast technique for minimizing communication overhead in many important applications, such as matrix transpose, Fast Fourier transform, and ADI.

Bokhari, Shahid H.↗
NASA NTRS1995

Initial results for the silicon monolithically interconnected solar cell product

This proprietary technology is based on AstroPower's electrostatic bonding and innovative silicon solar cell processing techniques. Electrostatic bonding allows silicon wafers to be permanently attached to a thermally matched glass superstrate and then thinned to final thicknesses less than 25 micron. These devices are based on the features of a thin, light-trapping silicon solar cell: high voltage, high current, light weight (high specific power) and high radiation resistance. Monolithic interconnection allows the fabrication costs on a per watt basis to be roughly independent of the array size, power or voltage, therefore, the cost effectiveness to manufacture solar cell arrays with output powers ranging from milliwatts up to four watts and output voltages ranging from 5 to 500 volts will be similar. This compares favorably to conventionally manufactured, commercial solar cell arrays, where handling of small parts is very labor intensive and costly. In this way, a wide variety of product specifications can be met using the same fabrication techniques. Prototype solar cells have demonstrated efficiencies greater than 11%. An open-circuit voltage of 5.4 volts, fill factor of 65%, and short-circuit current density of 28 mA/sq cm at AM1.5 illumination are typical. Future efforts are being directed to optimization of the solar cell operating characteristics as well as production processing. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. These features make this proprietary technology an excellent candidate for a large number of consumer products.

Dinetta, L. C.↗
NASA NTRS2010

Special Component Designs for Differential-Amplifier MMICs

Special designs of two types of electronic components transistors and transmission lines have been conceived to optimize the performances of these components as parts of waveguide-embedded differential-amplifier monolithic microwave integrated circuits (MMICs) of the type described in the immediately preceding article. These designs address the following two issues, the combination of which is unique to these particular MMICs: Each MMIC includes a differential double-strip transmission line that typically has an impedance between 60 and 100 W. However, for purposes of matching of impedances, transmission lines having lower impedances are also needed. The transistors in each MMIC are, more specifically, one or more pair(s) of InP-based high-electron-mobility transistors (HEMTs). Heretofore, it has been common practice to fabricate each such pair as a single device configured in the side-to-side electrode sequence source/gate/drain/gate/source. This configuration enables low-inductance source grounding from the sides of the device. However, this configuration is not suitable for differential operation, in which it is necessary to drive the gates differentially and to feed the output from the drain electrodes differentially. The special transmission-line design provides for three conductors, instead of two, in places where lower impedance is needed. The third conductor is a metal strip placed underneath the differential double-strip transmission line. The third conductor increases the capacitance per unit length of the transmission line by such an amount as to reduce the impedance to between 5 and 15 W. In the special HEMT-pair design, the side-to-side electrode sequence is changed to drain/gate/source/gate/ drain. In addition, the size of the source is reduced significantly, relative to corresponding sizes in prior designs. This reduction is justified by the fact that, by virtue of the differential configuration, the device has an internal virtual ground, and therefore there is no need for a low-resistance contact between the source and the radio-frequency circuitry. The source contact is needed only for DC biasing. These designs were implemented in a single-stage-amplifier MMIC. In a test at a frequency of 305 GHz, the amplifier embedded in a waveguide exhibited a gain of 0 dB; after correcting for the loss in the waveguide, the amplifier was found to afford a gain of 0.9 dB. In a test at 220 GHz, the overall gain of the amplifier- and-waveguide assembly was found to be 3.5 dB.

Kangaslahti, Pekka↗
NASA NTRS1982

High density circuit technology, part 4

An accurate study and evaluation of dielectric thin films is conducted in order to find the material or combination of materials which would optimize NASA'S double layer metal process. Emphasis is placed on polyimide dielectrics because of their reported outstanding dielectric characteristics (including electrical, chemical, thermal, and mechanical) and ease of processing, as well as their rapid acceptance by the semiconductor industry.

Wade, T. E.↗
NASA NTRS1972

High-Q toroidal cavities for high frequency klystrons.

A toroidal cavity developed for a 4-KW 12 GHz satellite-borne television transmitter klystron is described. The cavity has an internal Q 40% higher than that of a conventional cylindrical doubly reentrant cavity, thus yielding higher circuit efficiency and conserving energy which cannot be recovered in multistage depressed potential beam collectors. As a result of optimization studies with a digital computer program for obtaining cavity field distributions by a relaxation method and for computing the intrinsic cavity parameters, a particular cavity configuration with conical reentrant tunnel tips and toroidal walls is shown to provide good thermal characteristics and mechanical rigidity as well as low internal losses.

Branch, G. M.↗
NASA NTRS1985

Further research on high open circuit voltage in silicon solar cells

The results of a new research on the use of controlled dopant profiles and oxide passivation to achieve high open circuit voltage V sub oc in silicon solar cells is presented. Ion implantation has been used to obtain nearly optimal values of surface dopant concentration. The concentrations are selected so as to minimize heavy doping effects and thereby provide both high blue response and high V sub oc ion implantation technique has been successfully applied to fabrication of both n-type and p-type emitters. V sub oc of up to 660 mV is reported and AMO efficiency of 16.1% has been obtained.

Spitzer, M. B.↗