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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Unraveling the Atomic Mechanism of the Crystalline Phase‐Dependent Structural Features and Special Spectral Design of α‐, β‐, and Ɛ‐Ga₂O₃

Atomic‐scale phase transformations profoundly influence the functional properties of Ga₂O₃ polymorphs. By combining irradiation experiments with microstructure characterization and theoretical approaches, phase‐specific energy‐dissipation pathways in α‐, β‐, and ε‐Ga₂O₃ are uncovered and strategies for targeted property design are outlined. Competing antiphase boundaries (APBs) and twin domain boundaries (TDBs) promote irreversible α→ε interconversion through domain fragmentation. In β‐Ga₂O₃, defect‐induced stress gradients drive two distinct local transformations: surface Ga‐aggregated β→δ that stabilizes transient states, and latent‐track‐confined β→κ phase transition with recoverable distortions via cation reordering. Under electronic excitation, β‐Ga₂O₃ forms nanohillocks via robust GaO₆ octahedra (high density/strong Ga─O bonds), while α/ε‐Ga₂O₃ generates nanopores from tetrahedral Ga looseness (low bonding energy), highlighting phase‐dependent surface dynamics shaped by atomic packing and bonding anisotropy. Defect‐regulated recombination suppresses visible photoluminescence in α/β‐Ga₂O₃, whereas in ε‐Ga₂O₃ bandgap narrowing of ΔE: 0.30 eV is observed, enhancing emission. Linking phase‐dependent defect‐carrier interactions and metastable‐phase engineering in Ga₂O₃ enables property optimization for power‐electronics and optoelectronics devices.

electronic state configuration↗
DOE OSTI2024

Isolation of Single Donors in ZnO

The shallow donor in zinc oxide (ZnO) is a promising semiconductor spin qubit with optical access. Single indium donors are isolated in a commercial ZnO substrate using plasma focused ion beam (PFIB) milling. Quantum emitters are identified optically by spatial and frequency filtering. The indium donor assignment is based on the optical bound exciton transition energy and magnetic dependence. The emission stability of these single donors in terms of both intensity and frequency, alongside their transition linewidths less than twice the lifetime limit, highlight the promise of single In donors as optically accessible spin qubits. Here, the optical stability of single donors after FIB fabrication is promising for optical device integration required for scalable quantum technologies based on single donors in direct band gap semiconductors.

42 ENGINEERING↗
DOE OSTI2025

Integral X-ray diffuse scattering for studying irradiation-induced dislocation loops in single crystals

Numerical diffuse scattering cross-section calculations are used to establish a rigorous basis for determining the concentration and size distribution of dis­location loops in irradiated single crystals from integral X-ray diffuse scattering (XRDS) measurements. Differential XRDS intensities for prismatic {111} type dislocation loops are numerically calculated as a function of loop radius R and wavevectors q relative to Bragg reflections in tungsten. The results show the well known 1/q 2 Huang scattering form at small q that transitions to a ∼1/q 4 dependence associated with the Stokes–Wilson approximation for q ≳ 1/R. More importantly, they show further that the 1/q 4 falloff is not the asymptotic large-q form of the diffuse scattering for small loops (R < 200 Å) as has often been assumed. Rather, for loop sizes as small as R ≃ 5 Å with strong curvature, the calculations show definitively that the scattering transitions to a robust 1/q 5 falloff at larger q that arises due to the local strains near the dislocation core defining the circumference of the dislocation loops. The presence of this 1/q 5 asymptotic form for both small and large loops is experimentally confirmed using an integral XRDS measurement around the 110 reflection on self-ion-irradiated tungsten combined with numerically calculated integral XRDS cross-sections. Accordingly, the historical two-region theoretical treatment of the cross-sections for integral XRDS is extended to a three-region model that has direct sensitivity to the (first-moment) dislocation line lengths of dislocation loops. In conclusion, these developments enable the use of both numerical and analytically modeled cross-sections to make accurate integral XRDS determinations of dislocation loop sizes and concentrations using modest-intensity laboratory X-ray sources.

42 ENGINEERING↗
DOE OSTI2026

GaN Core-shell Nanofin Vertical Transistor (CoNVerT): A New Direction for Power Electronics (Final Scientific/Technical Report)

A novel power transistor architecture, the GaN c ore-shell n anofin ver tical transistor (CoNVerT) to address fundamental challenges in realizing the ultimate limit of GaN power transistor performance was explored experimentally. This technology promises ultra-high-efficiency high voltage/high power applications (e.g. DC/DC converters, motor control, fast charging, actuation), as well as to operate in harsh environments. The device exploits a vertical superjunction structure based on an experimentally-validated core-shell nanofin growth process in which lateral p-n heterojunctions are formed in a single growth step, while still maintaining vertical current flow for compact die size and low cost. The concept leverages the best properties of GaN for mid-range voltage applications: high mobility, high breakdown voltage, and native heterojunction enhancement-mode operation. Due to the crystallographic nature of the nanofin growth by molecular beam epitaxy, the sidewall heterojunctions occur on non-polar planes, resulting in ultra-smooth interfaces for high mobility, no sidewall etch damage and related surface/interface states, and elimination of piezoelectric effects that can limit reliability in conventional structures. This also facilitates superjunction formation for maximum device performance, and the selective-area growth of the nanofin results in dislocation-free growth, even on low-cost Si (111) substrate. In this program, core-shell nanofins were grown by molecular beam epitaxy, test structures to evaluate the doping, resistivity, and other electrical properties were fabricated, and the material and test structures were characterized in detail. The work identified clear potential (e.g., the doping was well controlled as required for superjunction concepts), but also additional areas that require additional effort to resolve (some unexpected crystal defects were encountered that require additional engineering to overcome). Simulation studies of the proposed concept validate that the fundamental approach is very promising, but additional effort in experimental realization is needed.

42 ENGINEERING↗
NASA NTRS1991

Annealing characteristics of irradiated hydrogenated amorphous silicon solar cells

It was shown that 1 MeV proton irradiation with fluences of 1.25E14 and 1.25E15/sq cm reduces the normalized I(sub SC) of a-Si:H solar cell. Solar cells recently fabricated showed superior radiation tolerance compared with cells fabricated four years ago; the improvement is probably due to the fact that the new cells are thinner and fabricated from improved materials. Room temperature annealing was observed for the first time in both new and old cells. New cells anneal at a faster rate than old cells for the same fluence. From the annealing work it is apparent that there are at least two types of defects and/or annealing mechanisms. One cell had improved I-V characteristics following irradiation as compared to the virgin cell. The work shows that the photothermal deflection spectroscopy (PDS) and annealing measurements may be used to predict the qualitative behavior of a-Si:H solar cells. It was anticipated that the modeling work will quantitatively link thin film measurements with solar cell properties. Quantitative predictions of the operation of a-Si:H solar cells in a space environment will require a knowledge of the defect creation mechanisms, defect structures, role of defects on degradation, and defect passivation and annealing mechanisms. The engineering data and knowledge base for justifying space flight testing of a-Si:H alloy based solar cells is being developed.

Payson, J. S.↗
NASA NTRS2001

Effect of convection on osteoblastic cell growth and function in biodegradable polymer foam scaffolds

Culture of seeded osteoblastic cells in three-dimensional osteoconductive scaffolds in vitro is a promising approach to produce an osteoinductive material for repair of bone defects. However, culture of cells in scaffolds sufficiently large to bridge critical-sized defects is a challenge for tissue engineers. Diffusion may not be sufficient to supply nutrients into large scaffolds and consequently cells may grow preferentially at the periphery under static culture conditions. Three alternative culturing schemes that convect media were considered: a spinner flask, a rotary vessel, and a perfusion flow system. Poly(DL-lactic-co-glycolic acid) (PLGA) foam discs (12.7 mm diameter, 6.0 mm thick, 78.8% porous) were seeded with osteoblastic marrow stromal cells and cultured in the presence of dexamethasone and L-ascorbic acid for 7 and 14 days. Cell numbers per foam were found to be similar with all culturing schemes indicating that cell growth could not be enhanced by convection, but histological analysis indicated that the rotary vessel and flow system produced a more uniform distribution of cells throughout the foams. Alkaline phosphatase (ALP) activity per cell was higher with culture in the flow system and spinner flask after 7 days, while no differences in osteocalcin (OC) activity per cell were observed among culturing methods after 14 days in culture. Based on the higher ALP activity and better cell uniformity throughout the cultured foams, the flow system appears to be the superior culturing method, although equally important is the fact that in none of the tests did any of the alternative culturing techniques underperform the static controls. Thus, this study demonstrates that culturing techniques that utilize fluid flow, and in particular the flow perfusion system, improve the properties of the seeded cells over those maintained in static culture.

NASA Discipline Cell Biology↗
NASA NTRS1999

The Effect of Penetration Depth on Thermal Contrast of NDT by Thermography

Nondestructive evaluation by Thermography (TNDE) is generally classified into two categories, the passive approach and the active approach. The passive approach is usually performed by measuring the natural temperature difference between the ambient and the material or structure to be tested. The active approach, on the other hand, requires the application of an external energy source to stimulate the material for inspection. A laser, a heater, a hot air blower, a high power thermal pulse, mechanical, or electromagnetic energy may provide the energy sources. For the external heating method to inspect materials for defects and imperfection at ambient temperature, a very short burst of heat can be introduced to one of the surfaces or slow heating of the side opposite to the side being observed. Due to the interruption of the heat flow through the defects, the thermal images will reveal the defective area by contrasting against the surrounding good materials. This technique is called transient Thermography, pulse video Thermography, or thermal wave imaging. As an empirical rule, the radius of the smallest defect should be at least one to two times larger than its depth under the surface. Thermography is being used to inspect void, debond, impact damage, and porosity in composite materials. It has been shown that most of the defects and imperfection can be detected. However, the current method of inspection using thermographic technique is more of an art than a practical scientific and engineering approach. The success rate of determining the defect location and defect type is largely depend on the experience of the person who operates thermography system and performs the inspection. The operator has to try different type of heat source, different duration of its application time, as well as experimenting with the thermal image acquisition time and interval during the inspection process. Further-more, the complexity of the lay-up and structure of composites makes it more difficult to determine the optimal operating condition for revealing the defects. In order to develop an optimal thermography inspection procedure, we must understand the thermal behavior inside the material subjected to transient heat in order to interpret the thermal images correctly. Fabrication of finite element models of characteristic defects in composite materials subjected to transient heat will enable the development of appropriate procedure for thermography inspection. Design of phantom defects could be modeled and behavior characterized prior to physically building these test parts. Since production of phantom test parts can be very time consuming and laborious, it is important to design good representative defects.

Chu, Tsuchin Philip↗
DOE OSTI2024

Simple self-consistent method for excited states in density functional theory to characterize defect-derived behavior in wide-band-gap-based microelectronic materials

This final report summarizes the results of the Laboratory Direct Research and Development (LDRD) Project Number 229740. Wide band gap semiconductors such as gallium nitride (GaN) have features highly desirable for multiple mission electronic applications. Realization of their potential requires atomic-scale understanding of electronic behavior. The principal experimental tools for electronically probing defects in GaN are chemically undifferentiating and lack a practical theoretical counterpart needed to identify and characterize specific defects. This project investigated whether a simple idea for modeling defect excited states and their associated photoluminescence (PL) energies is viable, as a path to accelerate the understanding of defect behavior and gain valuable insights into engineering new electronic materials and devices. The research implemented a non-self-consistent total-energy evaluation of a Koopmans-type estimation of an excited electronic state energy in density functional theory (DFT) calculations, and proceeded to design, implement, and assess a self-consistent method for computing excited states based upon an OCcupation-Constrained-DFT (occ-DFT). The occ-DFT was verified in test calculations of defect excited states and validated against well-characterized PL data for 3d transition metal defects in GaN. The method proved stable and robust in computing excited states and gave accurate predictions compared to experimental PL data. The combined ground state/excited-state capability proved capable of chemically differentiating defect species in GaN. In application to 3d dopants in GaN, we reinterpreted extensive experimental literature, proposed new defects as prospective candidates for use in quantum information applications, and outlined design strategies to create and exploit these potentially useful functional defects in GaN.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Electronic Excitation‐Driven β‐Ga 2 O 3 Metastability Transformation and Self‐Organization Mechanism: β→κ/γ/δ Phases

Here, irradiation-driven multiphase self-organization presents emergent opportunities for the customization of nanoscale engineering properties, dynamically tuning strain-field distributions and interfacial electronic structures. Responding to intense electronic excitation-induced energy deposition, the dominant phase transformations, with varying Gibbs free energy $Δ,G^o_f$ are confirmed as β → κ → γ → δ that are located in specific microregions for Gallium (III) oxide (Ga 2 O 3 ), as follows: (i) Surface-localized interstitial accumulation under compressive stress triggers β → δ via semi-coherent interface formation. (ii) Tensile stress within latent tracks drives vacancy-mediated oxygen layer truncation (4/12 periodicity along ⟨0001⟩), stabilizing coherent 4H (ABCB) κ and 3C (ABC) β (ABC) interfaces through strain-compensated octahedral distortion. (iii) Screw dislocation-mediated lattice relaxation induces β → γ via cation disordering (Ga 3+ occupancy at β-interstitial sites), forming metastable spinel γ with mixed occupancy across 16d/8a Wyckoff sites. Irradiation-driven β-Ga 2 O 3 →κ/γ/δ transitions, as mechanistically revealed via inelastic thermal spike (i-TS) calculations and molecular dynamics simulations, induce defect-mediated nonlinear photoresponse, critical for optoelectronic engineering.

Han, Xinqing [Shandong Univ., Jinan (China)]↗
NASA NTRS1993

Applying formal methods and object-oriented analysis to existing flight software

Correctness is paramount for safety-critical software control systems. Critical software failures in medical radiation treatment, communications, and defense are familiar to the public. The significant quantity of software malfunctions regularly reported to the software engineering community, the laws concerning liability, and a recent NRC Aeronautics and Space Engineering Board report additionally motivate the use of error-reducing and defect detection software development techniques. The benefits of formal methods in requirements driven software development ('forward engineering') is well documented. One advantage of rigorously engineering software is that formal notations are precise, verifiable, and facilitate automated processing. This paper describes the application of formal methods to reverse engineering, where formal specifications are developed for a portion of the shuttle on-orbit digital autopilot (DAP). Three objectives of the project were to: demonstrate the use of formal methods on a shuttle application, facilitate the incorporation and validation of new requirements for the system, and verify the safety-critical properties to be exhibited by the software.

Cheng, Betty H. C.↗
DOE OSTI2024

Cost-effective Conductor, Cable, and Coils for High Field Rotating Electric Machines

The purpose of the DOE-AMMTO-funded project was to significantly reduce industrial energy intensity through manufacturing innovations. The project focused on superconducting technology for industrial motors to dramatically increase efficiency. The bottleneck in deploying high temperature superconducting (HTS) motors was high cost and low yield of the conductor manufacturing process. The process yield is low because of the defects in the conductor, forcing the manufacturers to cut off defective sections after characterizing each millimeter. Additionally, the piece lengths tend to be low because of the defects. The project tackled the low-yield manufacturing process challenge by devising an innovative method to use defective conductors in bundled cables without losing performance by engineering current sharing among the conductors. The innovation not only lowers the cost of the conductor but also enhances the reliability of HTS motors and other devices to mitigate the defects that might form during the fabrication and operation of the device. With the increasing interest in REBa2Cu3O7-x (REBCO)-coated conductors for various power, energy, and magnet applications, ensuring the reliability of HTS devices is of significant interest. The EERE funding allowed us to make significant progress in understanding the defects in manufactured conductors and the implications of the defects in superconducting electric motors and other superconducting power and energy applications.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2024

Crystallization and assembly at interfaces: Celebrating the achievements of a vibrant research community

Crystallization is one of the cornerstones of modern materials science and engineering and plays a critical role in industries ranging from petroleum derivative manufacturing to microstructural engineering of structural materials and the defect-free growth of silicon single crystals for integrated chip technology. Also, in the realm of environmental and biological processes, the mineralization of diverse compounds has shaped the vast array of ecosystems we observe today. Conversely, understanding the crystallization and assembly of building blocks of various sizes at interfaces has broader impacts on materials synthesis, performance of energy storage devices, optimized processing conditions, and more.

36 MATERIALS SCIENCE↗
NASA NTRS2004

Development of an Optical-Real Time Polarimetric Imaging System for Aerospace Applications

The design of an optical polarimetric imaging system, aimed to detect cracks or structural defects on the surface of rotating aircraft engine shafts, is presented. The experimental results have been processed by a real time wavelet denouncing system implemented by a Filed Programmable Gate Arrays (FPGA), which has been designed for this purpose. The experimental results clearly indicate that high signal-to-noise ratio signals can be obtained.

Giakos, George C.↗
DOE OSTI2025

Multiscale Explanation of the Missing Gallium Vacancy in Gallium Arsenide

Irradiation of gallium arsenide (GaAs) produces immobile vacancies and mobile interstitials. Yet, after decades of experimental investigation, the immobile Ga vacancy continues to evade detection, raising the question: where is the Ga vacancy? Static first-principles calculations predict a Ga vacancy should be readily observed. We find that short-time dynamical evolution of primary defects is the key to explaining this conundrum. Using a dynamical multiscale atomistically informed device engineering (AIDE) method, we discover that during the initial displacement damage, the Ga vacancy (3-/2-) defect level pins the Fermi level near the midgap, producing oppositely charged vacancies and interstitials. Driven by Coulomb attraction, fast As interstitials preferentially annihilate Ga vacancies. The Ga vacancy population plummets below detectable limits—and the now unpinned Fermi level recovers—before being experimentally observed. This dynamical model solves the mystery of the missing Ga vacancy and reveals the importance of a multiscale approach to explore the dynamical chemical behavior in experimentally inaccessible short-time regimes.

Diaz, Leopoldo [Sandia National Laboratories (SNL-↗
DOE OSTI2024

Remarks on geometric engineering, symmetry TFTs and anomalies

Abstract Geometric engineering is a collection of tools developed to establish dictionaries between local singularities in string theory and (supersymmetric) quantum fields. Extended operators and defects, as well as their higher quantum numbers captured by topological symmetries, can be encoded within geometric engineering dictionaries. In this paper we revisit and clarify aspects of these techniques, with special emphasis on ’t Hooft anomalies, interpreted from the SymTFT perspective as obstructions to the existence of Neumann boundary conditions. These obstructions to gauging higher symmetries are captured via higher link correlators for the SymTFT on spheres. In this work, we give the geometric engineering counterpart of this construction in terms of higher links of topological membranes. We provide a consistency check in the context of 5D SCFTs with anomalous 1-form symmetries, where we give two independent derivations of the anomaly in terms of higher links, one purely field theoretical and the other purely geometrical. Along the way, we also recover the construction of non-invertible duality defects in 4D$$ \mathcal{N} $$ N = 4 SYM from a geometric engineering perspective.

Physics↗
NASA NTRS1982

Environmental and High-Strain Rate effects on composites for engine applications

The Lewis Research Center is conducting a series of programs intended to investigate and develop the application of composite materials to structural components for turbojet engines. A significant part of that effort is directed to establishing resistance, defect growth, and strain rate characteristics of composite materials over the wide range of environmental and load conditions found in commercial turbojet engine operations. Both analytical and experimental efforts are involved.

Chamis, C. C.↗
NASA NTRS1980

Engine environmental effects on composite behavior

A series of programs were conducted to investigate and develop the application of composite materials to turbojet engines. A significant part of that effort was directed to establishing the impact resistance and defect growth chracteristics of composite materials over the wide range of environmental conditions found in commercial turbojet engine operations. Both analytical and empirical efforts were involved. The experimental programs and the analytical methodology development as well as an evaluation program for the use of composite materials as fan exit guide vanes are summarized.

Chamis, C. C.↗
NASA NTRS1934

Evaluation of scavenging in two-stroke-cycle engines

The viewpoints are discussed, according to which the scavenging of two-stroke-cycle engines can be evaluated, and the relations between scavenging pressure and the quantity of the scavenging medium required, as also between the scavenging pressure and the revolution speed, are developed. It is further shown that the power increase is limited by the scavenging process, so that further researches are desirable for qualitative improvement. These results lead to several conclusions regarding the propulsion of motor vehicles by the two-stroke-cycle engines. Lastly, attention is called to the fundamental defect of the two-dimensional treatment of the scavenging process and to the consequent distinction between the two-dimensional and three-dimensional scavenging-type efficiency.

Venediger, Herbert J↗