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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Suppression effect of silicon (Si) on Er{sup 3+} 1.54μm excitation in ZnO thin films

We have investigated the photoluminescence (PL) characteristics of ZnO:Er thin films on Si (100) single crystal and SiO{sub 2}-on-silicon (SiO{sub 2}) substrates, synthesized by radio frequency magnetron sputtering. Rutherford backscattering/channeling spectrometry (RBS), X-ray diffraction (XRD) and atomic force microscope (AFM) were used to analyze the properties of thin films. The diffusion depth profiles of Si were determined by second ion mass spectrometry (SIMS). Infrared spectra were obtained from the spectrometer and related instruments. Compared with the results at room temperature (RT), PL (1.54μm) intensity increased when samples were annealed at 250°C and decreased when at 550°C. A new peak at 1.15μm from silicon (Si) appeared in 550°C samples. The Si dopants in ZnO film, either through the diffusion of Si from the substrate or ambient, directly absorbed the energy of pumping light and resulted in the suppression of Er{sup 3+} 1.54μm excitation. Furthermore, the energy transmission efficiency between Si and Er{sup 3+} was very low when compared with silicon nanocrystal (Si-NC). Both made the PL (1.54μm) intensity decrease. All the data in experiments proved the negative effects of Si dopants on PL at 1.54μm. And further research is going on.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Tuning infrared plasmon resonances in doped metal-oxide nanocrystals through cation-exchange reactions

Metal-oxide nanocrystals doped with aliovalent atoms can exhibit tunable infrared localized surface plasmon resonances (LSPRs). Yet, the range of dopant types and concentrations remains limited for many metal-oxide hosts, largely because of the difficulty in establishing reaction kinetics that favors dopant incorporation by using the co-thermolysis method. Here we develop cation-exchange reactions to introduce p-type dopants (Cu + , Ag + , etc.) into n-type metal-oxide nanocrystals, producing programmable LSPR redshifts due to dopant compensation. We further demonstrate that enhanced n-type doping can be realized via sequential cation-exchange reactions mediated by the Cu + ions. Cation-exchange transformations add a new dimension to the design of plasmonic nanocrystals, allowing preformed nanocrystals to be used as templates to create compositionally diverse nanocrystals with well-defined LSPR characteristics. The ability to tailor the doping profile postsynthetically opens the door to a multitude of opportunities to deepen our understanding of the relationship between local structure and LSPR properties.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2014

Frustrated incomplete donor ionization in ultra-low resistivity germanium films

The relationship between carrier concentration and donor atomic concentration has been determined in n-type Ge films doped with P. The samples were carefully engineered to minimize non-active dopant incorporation by using specially designed P(SiH{sub 3}){sub 3} and P(GeH{sub 3}){sub 3} hydride precursors. The in situ nature of the doping and the growth at low temperatures, facilitated by the Ge{sub 3}H{sub 8} and Ge{sub 4}H{sub 10} Ge sources, promote the creation of ultra-low resistivity films with flat doping profiles that help reduce the errors in the concentration measurements. The results show that Ge deviates strongly from the incomplete ionization expected when the donor atomic concentration exceeds N{sub d} = 10{sup 17} cm{sup −3}, at which the energy separation between the donor and Fermi levels ceases to be much larger than the thermal energy. Instead, essentially full ionization is seen even at the highest doping levels beyond the solubility limit of P in Ge. The results can be explained using a model developed for silicon by Altermatt and coworkers, provided the relevant model parameter is properly scaled. The findings confirm that donor solubility and/or defect formation, not incomplete ionization, are the major factors limiting the achievement of very high carrier concentrations in n-type Ge. The commercially viable chemistry approach applied here enables fabrication of supersaturated and fully ionized prototypes with potential for broad applications in group-IV semiconductor technologies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1995

Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen-passivated HE InP cell results will also be presented.

Chatterjee, B.↗
DOE OSTI2018

Internal Resistive Barriers Related to Zinc Diffusion During the Growth of Inverted Metamorphic Multijunction Solar Cells

Majority carrier barriers at heterointerfaces are a common source of non-linear resistance that hinders concentrator solar cell performance. The source of a particular barrier is often unclear in a multijunction device with numerous heterointerfaces. In this work, we demonstrate Zn-dopant diffusion during inverted metamorphic multijunction (IMM) device growth to be one key cause of internal barrier formation. Using an inverted GaAs/GaAs tandem solar cell with a high temperature annealing layer grown in between each subcell, we simulate the annealing conditions of a multijunction growth in a simplified structure. Through analysis of the device by secondary ion mass spectrometry (SIMS) and electrochemical capacitance-voltage profiling, we show that annealing causes Zn to diffuse out of the top cell Ga 0.5 In 0.5 P back surface field (BSF) and accumulate in the GaAs base. Through equilibrium band modeling, we show that the resultant doping profile forms an energetic barrier to hole flow in the valence band, which correlates with fill factor losses in the current-voltage curves measured under concentration. When we, instead, employ a C-doped Al 0.2 Ga 0.8 As BSF layer in the top cell, we do not observe evidence of a heterojunction barrier. We attribute this difference to the reduced diffusivity of carbon, confirmed by SIMS, as well as more favorable valence band offsets between GaAs and Al 0.2 Ga 0.8 As. Finally, we compare 5-junction IMM cells with Al 0.2 Ga 0.8 As:C and Ga 0.5 In 0.5 P:Zn BSF layers in the GaAs third junction, respectively, and show a significantly improved concentrator device performance when Al 0.2 Ga 0.8 As:C is employed. Lastly, we demonstrate the importance of designing annealing tolerance into multijunction structures that are subjected to extended annealing during growth.

14 SOLAR ENERGY↗
DOE OSTI2022

A New Low-Temperature Approach for Efficient and Low-Cost Group V Doping in CdTe Thin Film Solar Cells (Final Technical Report)

The goal of this project is to develop a highly efficient low-temperature ex-situ Group V diffusion doping approach in the CdCl 2 treated polycrystalline CdTe film using the group V chlorides (i.e., PCl 3 , AsCl 3 , SbCl 3 , and BiCl 3 ) as dopants source. For the first time, our innovative doping strategies through the low-temperature ex-situ Group V doping process in polycrystalline CdSeTe successfully demonstrated a promising power conversion efficiency of ~19% compared to the Cu-doped counterparts. Our newly developed low-temperature ex-situ group V doping allows dedicated control of group V diffusion amount, generates a desirable depth profile, and is completely compatible with commercial CdTe module manufacturing. We built the partnership with the largest CdTe solar module manufacturing in the US, e.g., First Solar, Inc to further develop these low-temperature diffusion doped CdSeTe solar cells. Our technology was granted US Patent No. US11257977B2. In this project, we systematically investigate and characterize the new ex-situ group V doping mechanisms, defect chemistry, microstructure, and device physics in CdTe solar cells by combining experimental and theoretical means to pave the way to achieve lower cost toward $\$$0.02/kWh and higher power conversion efficiency (PCE) toward 25% in polycrystalline CdTe solar technology. This project will benefit the public by providing more affordable solar electricity and provide an effective way to address climate change.

14 SOLAR ENERGY↗
DOE OSTI2012

Effects of sintering aid CuTa{sub 2}O{sub 6} on piezoelectric and dielectric properties of sodium potassium niobate ceramics

Graphical abstract: NKN ceramics with a sintering aid CuTa{sub 2}O{sub 6} (CT) doping increased the mechanical quality factor (Q{sub m}) and electromechanical coupling factor (k{sub p}). Highlights: Black-Right-Pointing-Pointer A new sintering aid CuTa{sub 2}O{sub 6} was developed to dope into NKN ceramics. Black-Right-Pointing-Pointer Dense NKN ceramics were obtained as CuTa{sub 2}O{sub 6} compound doping. Black-Right-Pointing-Pointer We find the soluble limit of CuTa{sub 2}O{sub 6} compound incorporated into NKN ceramics. Black-Right-Pointing-Pointer The maximum Q{sub m} and k{sub p} values were more than 1500 and 42%, respectively. Black-Right-Pointing-Pointer CuTa{sub 2}O{sub 6} compound is a better sintering aid compared with K{sub 5.3}Cu{sub 1.3}Ta{sub 10}O{sub 29}. -- Abstract: In this study, the effects of a sintering aid CuTa{sub 2}O{sub 6} (CT) on (Na{sub 0.5}K{sub 0.5})NbO{sub 3} (NKN) ceramics were investigated. The diffracted angles in XRD profiles decreased because the Nb-sites were replaced by Cu and Ta ions, causing the expansion of lattice volume. SEM images showed smaller grain sizes at a low concentration of CuTa{sub 2}O{sub 6}, and grain sizes increased as the concentration of CuTa{sub 2}O{sub 6} doping increased because of a liquid phase formed. When CuTa{sub 2}O{sub 6} dopants were doped into NKN ceramics, the T{sub O-T} and T{sub c} phase transitions decreased because the replacement of Ta{sup 5+} ions in the B-site. A high bulk density (4.595 g/cm{sup 3}) and electromechanical coupling factor (k{sub p}, k{sub t}) were enhanced when CT dopants were doped into NKN ceramics. Moreover, the mechanical quality factor (Q{sub m}) also increased from 67 to 1550. NKN ceramics with sintering aid CuTa{sub 2}O{sub 6} doping showed excellent piezoelectric properties: k{sub p}: 42.5%; k{sub t}: 49.1%; Q{sub m}: 1550; and d{sub 33}: 96 pC/N.

36 MATERIALS SCIENCE↗
DOE OSTI2023

The effect of rare earth (RE 3+ ) ionic radii on transparent lanthanide-tellurite glass-ceramics: correlation between ‘hole-formalism’ and crystallization

Rare earth (RE) doped transparent tellurite glass-ceramics (GCs) are widely explored for their application as advanced photonic materials. Specifically, the growth of RE based “anti-glass” crystalline phases in transparent GCs enhances their effective functionality. Enormous studies on the properties of GCs revealed that optimization of glass composition and heat-treatment schedule are the foremost factors that affect the transparency of the GCs. Nevertheless, the direct effect of RE 3+ ions on the crystallization mechanism of glass has hardly been reported. Therefore, a base glass of the composition La 2 O 3 –Gd 2 O 3 –TiO 2 –TeO 2 (LGTT) is doped with RE 3+ ions (Ce 3+ , Pr 3+ , Nd 3+ , Sm 3+ , Eu 3+ , Tb 3+ , and Dy 3+ ) with varied ionic radii. Rietveld refinement from XRD of GCs confirms that (La/Gd) 2 Te 6 O 15 phases are precipitated, where dopants Ce, Pr and Nd occupy La sites, while Sm, Eu, Tb, and Dy occupy Gd sites. The configurational heat-capacity (ΔC p ) from DSC is found to be lower for larger ionic radii REs (Ce, Pr, Nd) than smaller ionic radii REs (Sm, Eu, Tb, Dy) thereby exhibiting higher chemical ordering followed by faster crystal growth rate in the former. However, the transparency retention profile of different RE-doped GCs follows the trend Eu:Tb > Sm:Dy > Nd > Pr > Ce, confirming the ionic radii effect. In addition to the ionic radii effect, in this work, we propose a ‘Hole-Formalism’ concept to explain the observed trend. It is further corroborated with an identical neutron diffraction pattern and ΔC p values for these ion pairs Sm 3+ : Dy 3+ (4f 5 : 4f 9 ) and Eu 3+ : Tb 3+ (4f 6 : 4f 8 ) results in a similar crystallization mechanism, transmission profile and fine-scale microstructures of these RE-based tellurite GCs.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Accelerated Irradiation and Qualification of Ceramic Nuclear Fuels

Accelerated irradiation efforts are an important topic in accelerated qualification of new nuclear fuel concepts for light water reactor (LWRs), microreactors, and other special purpose reactors. Accelerated fuel qualification combines both experimental and modeling work to expedite the total qualification time from approximately 20-25 years to 5-10 years timeframe. The scope covered under the current work package focuses on the experimental contributions for the neutron irradiations. Accelerated irradiation aims to reduce the total time needed for neutron irradiation to achieve targeted burnup, which is timely using conventional irradiation profiles. The purpose of this report is to detail the samples preparation for such irradiations, which contain standard, medium, and large grain undoped UO 2 , as well as large grain, Cr 2 O 3 -doped UO 2 . The data that will be generated from the irradiation of these samples will yield important information regarding fission gas retention as a function of grain size and the effect that Cr dopants have on diffusivity of fission gases.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2021

Novel Poly-Si:Ga/SiOx Passivating Contacts through Non-Equilibrium Doping

Poly-Si/SiOx passivating contacts are one of the key enablers for high-efficiency, low-cost c-Si solar cells. In recent years, record devices have reached efficiencies of 26% in the laboratory and 25% in the industry. The current cell structure utilizing a tunneling oxide passivating contact structure with a back phosphorus-doped poly- Si/SiOx passivating contact and a front boron diffused emitter suffers from large emitter recombination. Thus, replacing the front B diffused emitter with a p-type passivating contact is a route to overcome this deficiency. This gives rise to front/back poly-Si based passivating contacts. To address the low passivation performance of the B-doped poly-Si passivating contacts, we replace B with Ga as a novel p-type dopant to avoid dopant accumulation in the tunneling oxide, which is known to lead to large degradation loss in passivation quality. Here, we introduce a non-equilibrium method via pulsed laser melting to thermally melt and recrystallize the poly-Si and redistribute the dopants, achieving doping concentrations above the solid solubility limit (~4E19 cm-3). We demonstrate a good passivation quality with an iVoc of 721 mV with an active Ga doping concentration in poly-Si >1020 cm-3. Furthermore, we show a low contact resistivity of 33.2 +/- 9.3 mO cm2 using a diode model calculation. Finally, cross-section scanning spreading resistance microscopy was performed to determine the resistance profile across the non-homogeneously doped poly-Si layer.

c-Si↗
DOE OSTI2017

Modulation-Doped Multiple Quantum Wells of Aligned Single-Wall Carbon Nanotubes

Heterojunctions, quantum wells, and superlattices with precise doping profiles are behind today's electronic and photonic devices based on III–V compound semiconductors such as GaAs. Currently, there is considerable interest in constructing similar artificial 3D architectures with tailored electrical and optical properties by using van der Waals junctions of low-dimensional materials. In this study, the authors have fabricated a novel structure consisting of multiple thin (≈20 nm) layers of aligned single-wall carbon nanotubes with dopants inserted between the layers. This “modulation-doped” multiple-quantum-well structure acts as a terahertz polarizer with an ultra-broadband working frequency range (from ≈0.2 to ≈200 THz), a high extinction ratio (20 dB from ≈0.2 to 1 THz), and a low insertion loss (<2.5 dB from ≈0.2 to 200 THz). The individual carbon nanotube films—highly aligned, densely packed, and large (2 in. in diameter)—were produced using vacuum filtration and then stacked together in the presence of dopants. This simple, robust, and cost-effective approach is applicable to the fabrication of a variety of devices relying on macroscopically 1D properties of aligned carbon nanotube assemblies.

36 MATERIALS SCIENCE↗
NASA NTRS1986

High-purity silicon crystal growth investigations

Information is given on evaporation and segregation contributions to impurity profiles of floating zone crystals (FZ); high-purity silicon float zoning (FZ); minority-carrier lifetime measurement of heavily doped silicon crystals; the effect of some crystal growth parameters on minority-carrier lifetime; and defect investigations by X-ray topography in graphical and tabular form. It was concluded that evaporation contributes substantially to impurity reduction when FZ or cold-crucible growth is conducted in a vacuum; boron and gallium may be more favorable dopants than indium or aluminum for obtaining high minority-carrier lifetimes; minority-carrier lifetimes greater than 100 microseconds are feasible at a 2 times 10 to the 17th power cm-3 doping level; minority-carrier lifetime decreases with increasing crystal cooling rate and also with the presence of dislocations; the method used to clean silicon feed rods affects lifetime; and microdefect densities in dislocation-free FZ crystals appear to be lower with Ga doping than with B doping.

Ciszek, T. F.↗
DOE OSTI2019

Length-Dependent Evolution of Type II Heterojunctions in Bottom-Up-Synthesized Graphene Nanoribbons

The ability to tune the band-edge energies of bottom-up graphene nanoribbons (GNRs) via edge dopants creates new opportunities for designing tailor-made GNR heterojunctions and related nanoscale electronic devices. Here we report the local electronic characterization of type II GNR heterojunctions composed of two different nitrogen edge-doping configurations (carbazole and phenanthridine) that separately exhibit electron-donating and electron-withdrawing behavior. Atomically resolved structural characterization of phenanthridine/carbazole GNR heterojunctions was performed using bond-resolved scanning tunneling microscopy and noncontact atomic force microscopy. Scanning tunneling spectroscopy and first-principles calculations reveal that carbazole and phenanthridine dopant configurations induce opposite upward and downward orbital energy shifts owing to their different electron affinities. Here, the magnitude of the energy offsets observed in carbazole/phenanthridine heterojunctions is dependent on the length of the GNR segments comprising each heterojunction with longer segments leading to larger heterojunction energy offsets. Using a new on-site energy analysis based on Wannier functions, we find that the origin of this behavior is a charge transfer process that reshapes the electrostatic potential profile over a long distance within the GNR heterojunction.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2017

Impact of Wide-Ranging Nanoscale Chemistry on Band Structure at Cu(In, Ga)Se 2 Grain Boundaries

The relative chemistry from grain interiors to grain boundaries help explain why grain boundaries may be beneficial, detrimental or benign towards device performance. 3D Nanoscale chemical analysis extracted from atom probe tomography (APT) (10’s of parts-per-million chemical sensitivity and sub-nanometer spatial resolution) of twenty grain boundaries in a high-efficiency Cu(In, Ga)Se 2 solar cell shows the matrix and alkali concentrations are wide-ranging. The concentration profiles are then related to band structure which provide a unique insight into grain boundary electrical performance. Fluctuating Cu, In and Ga concentrations result in a wide distribution of potential barriers at the valence band maximum (VBM) (-10 to -160 meV) and the conduction band minimum (CBM) (-20 to -70 meV). Furthermore, Na and K segregation is not correlated to hampering donors, (In, Ga) Cu and V Se , contrary to what has been previously reported. In addition, Na and K are predicted to be n-type dopants at grain boundaries. An overall band structure at grain boundaries is presented.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Hydrogen Analysis by Gas Chromatography–Mass Spectrometry

The detection of hydrogen in complex gas mixtures is essential for many applications. Conventional approaches such as gas chromatography (GC) with thermal conductivity detection (TCD) and residual gas analyzers (RGAs) face significant limitations: TCD exhibits poor response when helium is used as a carrier gas, whereas RGAs lack chromatographic separation, preventing reliable quantification of hydrogen because of interference from other species. Traditional GC methods rely on dual-column configurations with packed or molecular-sieve porous layer open tubular (PLOT) columns to separate hydrogen from O2, N2, CO, CO2, CH4, and other hydrocarbons, increasing system complexity and limiting compatibility with mass spectrometry (MS) detection. In this work, we developed and validated a robust GC–MS method capable of directly detecting and quantifying hydrogen using electron ionization (EI) without dopants, reagent gases, or ion–molecule reaction schemes. By integrating a modified EI source and a cryogenically cooled single capillary column configuration, we achieved baseline separation of hydrogen from all major permanent gases and hydrocarbons in a refinery gas mixture using helium as the carrier gas. The method demonstrated excellent linearity, high sensitivity, and exceptional reproducibility. Adjustable sample-loop volumes and split ratios enabled optimization of peak shape and signal-to-noise performance for trace-level and percent-level hydrogen concentrations. Beyond hydrogen quantitation, the method provides simultaneous compositional profiling of other gases in a mixture in a single run, making it valuable for a wide range of tasks.

Lobodin, Vlad [ORNL]↗
DOE OSTI2014

Tungsten diffusion in silicon

Two doses (10{sup 13} and 10{sup 15} cm{sup −2}) of tungsten (W) atoms were implanted in different Si(001) wafers in order to study W diffusion in Si. The samples were annealed or oxidized at temperatures between 776 and 960 °C. The diffusion profiles were measured by secondary ion mass spectrometry, and defect formation was studied by transmission electron microscopy and atom probe tomography. W is shown to reduce Si recrystallization after implantation and to exhibit, in the temperature range investigated, a solubility limit close to 0.15%–0.2%, which is higher than the solubility limit of usual metallic impurities in Si. W diffusion exhibits unusual linear diffusion profiles with a maximum concentration always located at the Si surface, slower kinetics than other metals in Si, and promotes vacancy accumulation close to the Si surface, with the formation of hollow cavities in the case of the higher W dose. In addition, Si self-interstitial injection during oxidation is shown to promote W-Si clustering. Taking into account these observations, a diffusion model based on the simultaneous diffusion of interstitial W atoms and W-Si atomic pairs is proposed since usual models used to model diffusion of metallic impurities and dopants in Si cannot reproduce experimental observations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Predicting Nanoparticle Suspension Viscoelasticity for Multimaterial 3D Printing of Silica–Titania Glass

A lack of predictive methodology is frequently a major bottleneck in materials development for additive manufacturing. Hence, exploration of new printable materials often relies on the serendipity of trial and error approaches, which is time-consuming, labor-intensive, and costly. In this paper, we present an approach to overcome these issues by quantifying and controlling the viscoelasticity of inks for multimaterial 3D printing of silica–titania glass using direct ink writing (DIW). We formulate simple silica and silica–titania inks from a suspension of fumed silica nanoparticles in an organic solvent with a dissolved molecular titania precursor. We use a small set of experimental rheological data and estimates of interaction potentials from colloidal theory to develop a predictive tool that allows us to design and obtain compatible inks that are matched both in desired rheological properties (viscosity profiles and elastic modulus) as well as solids loading. The model incorporates silica particle volume fraction, particle size, particle size distribution, and titania precursor concentration, and captures the effects of all formulation parameters on the measured viscoelasticity in a single curve. We validate the ink formulations predicted by the model and find that the materials can be very well matched in rheological properties as desired for 3D printing. Using the DIW and heat treatment methods we have reported previously, we use these inks to print and process a fully transparent glass with spatial change in dopant composition and refractive index. Finally, we believe that this approach can be extended to other colloidal systems and allow predictive ink formulation design for desired printability in direct ink write manufacturing.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Solid phase epitaxial growth of high mobility La:BaSnO{sub 3} thin films co-doped with interstitial hydrogen

This work presents the solid phase epitaxial growth of high mobility La:BaSnO{sub 3} thin films on SrTiO{sub 3} single crystal substrates by crystallization through thermal annealing of nanocrystalline thin films prepared by pulsed laser deposition at room temperature. The La:BaSnO{sub 3} thin films show high epitaxial quality and Hall mobilities up to 26 ± 1 cm{sup 2}/Vs. Secondary ion mass spectroscopy is used to determine the La concentration profile in the La:BaSnO{sub 3} thin films, and a 9%–16% La doping activation efficiency is obtained. An investigation of H doping to BaSnO{sub 3} thin films is presented employing H plasma treatment at room temperature. Carrier concentrations in previously insulating BaSnO{sub 3} thin films were increased to 3 × 10{sup 19 }cm{sup −3} and in La:BaSnO{sub 3} thin films from 6 × 10{sup 19 }cm{sup −3} to 1.5 × 10{sup 20 }cm{sup −3}, supporting a theoretical prediction that interstitial H serves as an excellent n-type dopant. An analysis of the free electron absorption by infrared spectroscopy yields a small (H,La):BaSnO{sub 3} electron effective mass of 0.27 ± 0.05 m{sub 0} and an optical mobility of 26 ± 7 cm{sup 2}/Vs. As compared to La:BaSnO{sub 3} single crystals, the smaller electron mobility in epitaxial thin films grown on SrTiO{sub 3} substrates is ascribed to threading dislocations as observed in high resolution transmission electron micrographs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗