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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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A device to protect electronic circuitry from high voltage transients is constructed from a relatively thin piece of conductive composite sandwiched between two conductors so that conduction is through the thickness of the composite piece. The device is based on the discovery that conduction through conductive composite materials in this configuration switches to a high resistance mode when exposed to voltages above a threshold voltage.
A device to protect electronic circuitry from high voltage transients is constructed from a relatively thin piece of conductive composite sandwiched between two conductors so that conduction is through the thickness of the composite piece. The device is based on the discovery that conduction through conductive composite materials in this configuration switches to a high resistance mode when exposed to voltages above a threshold voltage.
Space-time multiplexer (STM) cell-based communication system designed to take advantage of both high throughput attainable in optical transmission links and flexibility and functionality of electronic processing, storage, and switching. Long packets segmented and transmitted optically by wavelength-division multiplexing. Performs optoelectronic and protocol conversion between electronic "store-and-forward" protocols and optical "hot-potato" protocols.
Circuit concepts for realization of highly reliable and efficient electronic subsystems and microminiaturization application - switching amplifier analysis
Optical and mechanical design, and electronic circuitry of field-switching, edge tracker for use in earth-lunar horizon sensor system
Laser altimetry provides an active, high-resolution, high-accuracy method for measurement of planetary and asteroid surface topography. The basis of the measurement is the timing of the roundtrip propagation of short-duration pulses of laser radiation between a spacecraft and the surface. Vertical, or elevation, resolution of the altimetry measurement is determined primarily by laser pulse width, surface-induced spreading in time of the reflected pulse, and the timing precision of the altimeter electronics. With conventional gain-switched pulses from solid-state lasers and nanosecond resolution timing electronics, submeter vertical range resolution is possible anywhere from orbital altitudes of approximately 1 km to altitudes of several hundred kilometers. Horizontal resolution is a function of laser beam footprint size at the surface and the spacing between successive laser pulses. Laser divergence angle and altimeter platform height above the surface determine the laser footprint size at the surface, while laser pulse repetition rate, laser transmitter beam configuration, and altimeter platform velocity determine the spacing between successive laser pulses. Multiple laser transmitters in a single laser altimeter instrument that is orbiting above a planetary or asteroid surface could provide across-track as well as along-track coverage that can be used to construct a range image (i.e., topographic map) of the surface. We are developing a pushbroom laser altimeter instrument concept that utilizes a linear array of laser transmitters to provide contiguous across-track and along-track data. The laser technology is based on the emerging monolithic combination of individual, 1-sq cm diode-pumped Nd:YAG laser pulse emitters. Details of the multi-emitter laser transmitter technology, the instrument configuration, and performance calculations for a realistic Discovery-class mission will be presented.
Here, this work demonstrates a GaN enhancement-mode monolithic bidirectional switch (MBDS) with breakdown voltage (BV) higher than 3.3 kV in both polarities. This MBDS is realized on a dual p-GaN gate high electron mobility transistor (HEMT) platform on sapphire substrate. It features a novel dual junction termination extension design for electric field management, which is built on the p-GaN layer in the gate stack and does not require epitaxial regrowth. The GaN MBDS exhibits symmetric on-state characteristics in both directions with a threshold voltage (V th ) of 0.6 V and a low specific on-resistance (R on,sp ) of 5.6 m Ω · cm2. This device presents the highest BV, as well as one of the best BV and R on,sp trade-offs, in all the reported MBDS devices. The R on,sp is lower than the performance limit of conventional BDS realized by two discrete devices. This 3.3 kV GaN MBDS opens the door for developing new circuit topologies and advancing system performance in medium-voltage power electronics.
An electron beam source having a single electron optical axis is provided with two coplanar cathodes equally spaced on opposite sides from the electron optical axis. A switch permits selecting either cathode, and a deflection system comprised of electromagnets, each with separate pole pieces equally spaced from the plane of the cathodes and electron optical axis, first deflects the electron beam from a selected cathode toward the electron optical axis, and then in an opposite direction into convergence with the electron optical axis. The result is that the electron beam from one selected cathode undergoes a sigmoid deflection in two opposite directions, like the letter S, with the sigmoid deflection of each being a mirror image of the other.
Frequency shifting, commonly used in electronic signal processing, is applied in tuning, automatic frequency control, antenna element switching, phase shifting, etc. Frequency shifting can be accomplished economically and reliably with simple circuit comprising conventional resistor and solid-state switching device which can be equivalent to two capacitors, depending on switching state.
A combination of emerging mission considerations such as 'launch on schedule', resource limitations, and the development of higher power spacecraft busses has resulted in renewed interest in high power hydrogen arcjet systems with specific impulses greater than 1000 s for Earth-space orbit transfer and maneuver applications. Solar electric propulsion systems with about 10 kW of power appear to offer payload benefits at acceptable trip times. This work outlines the design and development of 10 kW hydrogen arcjet power electronics and results of arcjet integration testing. The power electronics incorporated a full bridge switching topology similar to that employed in state of the art 5 kW power electronics, and the output filter included an output current averaging inductor with an integral pulse generation winding for arcjet ignition. Phase shifted, pulse width modulation with current mode control was used to regulate the current delivered to arcjet, and a low inductance power stage minimized switching transients. Hybrid power Metal Oxide Semiconductor Field Effect Transistors were used to minimize conduction losses. Switching losses were minimized using a fast response, optically isolated, totem-pole gate drive circuit. The input bus voltage for the unit was 150 V, with a maximum output voltage of 225 V. The switching frequency of 20 kHz was a compromise between mass savings and higher efficiency. Power conversion efficiencies in excess of 0.94 were demonstrated, along with steady state load current regulation of 1 percent. The power electronics were successfully integrated with a 10 kW laboratory hydrogen arcjet, and reliable, nondestructive starts and transitions to steady state operation were demonstrated. The estimated specific mass for a flight packaged unit was 2 kg/kW.
Fast overcurrent tripping circuit designed for incorporation into power metal oxide/semiconductor field-effect transistor (MOSFET) switching circuit. Serves as fast electronic circuit breaker by sensing voltage across MOSFET's during conduction and switching MOSFET's off within 1 microsecond after voltage exceeds reference value corresponding to tripping current. Acts more quickly than Hall-effect current sensor and, in comparison with shunt current-measuring circuits, smaller and consumes less power. Also ignores initial transient overcurrents during first 5 microseconds of switching cycle.
Laser altimetry provides a high-resolution, high-accuracy method for measurement of the elevation and horizontal variability of Earth-surface topography. The basis of the measurement is the timing of the round-trip propagation of short-duration pulses of laser radiation between a spacecraft and the Earth's surface. Vertical resolution of the altimetry measurement is determined primarily by laser pulsewidth, surface-induced spreading in time of the reflected pulse, and the timing precision of the altimeter electronics. With conventional gain-switched pulses from solid-state lasers and sub-nsec resolution electronics, sub-meter vertical range resolution is possible from orbital attitudes of several hundred kilometers. Horizontal resolution is a function of laser beam footprint size at the surface and the spacing between successive laser pulses. Laser divergence angle and altimeter platform height above the surface determine the laser footprint size at the surface, while laser pulse repetition-rate, laser transmitter beam configuration, and altimeter platform velocity determine the space between successive laser pulses. Multiple laser transitters in a singlaltimeter instrument provide across-track and along-track coverage that can be used to construct a range image of the Earth's surface. Other aspects of the multi-beam laser altimeter are discussed.
A generic design and a corresponding operating sequence have been developed for increasing the linear-response dynamic range of a complementary metal oxide/semiconductor (CMOS) image sensor. The design provides for linear calibrated dual-gain pixels that operate at high gain at a low signal level and at low gain at a signal level above a preset threshold. Unlike most prior designs for increasing dynamic range of an image sensor, this design does not entail any increase in noise (including fixed-pattern noise), decrease in responsivity or linearity, or degradation of photometric calibration. The figure is a simplified schematic diagram showing the circuit of one pixel and pertinent parts of its column readout circuitry. The conventional part of the pixel circuit includes a photodiode having a small capacitance, CD. The unconventional part includes an additional larger capacitance, CL, that can be connected to the photodiode via a transfer gate controlled in part by a latch. In the high-gain mode, the signal labeled TSR in the figure is held low through the latch, which also helps to adapt the gain on a pixel-by-pixel basis. Light must be coupled to the pixel through a microlens or by back illumination in order to obtain a high effective fill factor; this is necessary to ensure high quantum efficiency, a loss of which would minimize the efficacy of the dynamic- range-enhancement scheme. Once the level of illumination of the pixel exceeds the threshold, TSR is turned on, causing the transfer gate to conduct, thereby adding CL to the pixel capacitance. The added capacitance reduces the conversion gain, and increases the pixel electron-handling capacity, thereby providing an extension of the dynamic range. By use of an array of comparators also at the bottom of the column, photocharge voltages on sampling capacitors in each column are compared with a reference voltage to determine whether it is necessary to switch from the high-gain to the low-gain mode. Depending upon the built-in offset in each pixel and in each comparator, the point at which the gain change occurs will be different, adding gain-dependent fixed pattern noise in each pixel. The offset, and hence the fixed pattern noise, is eliminated by sampling the pixel readout charge four times by use of four capacitors (instead of two such capacitors as in conventional design) connected to the bottom of the column via electronic switches SHS1, SHR1, SHS2, and SHR2, respectively, corresponding to high and low values of the signals TSR and RST. The samples are combined in an appropriate fashion to cancel offset-induced errors, and provide spurious-free imaging with extended dynamic range.
Abstract Lead-free SrBi 2 Ta 2 O 9 (SBT) has been a promising ferroelectric material for various applications such as electronics and data storage due to its outstanding ferroelectric properties including high fatigue endurance and low leakage current. However, the atomic-scale domain structure and switching dynamics of ferroelectric SBT remain elusive. This study reveals that spontaneous polarization arises from canted bismuth-cation displacements, forming 90° and Ising-type 180° domain walls. Interestingly, topological pairs of ferroelectric vortex and antivortex connect ferroelectric boundaries where three domain walls converge. In situ electrical biasing transmission electron microscopy (TEM) reveals the dominance of 180° switching over 90°, where oxygen octahedral connectivity is protected by ferroelastic energy in the 90° domain wall. Consequently, all 180° domain walls and (anti)vortices are removed, leaving only 90° domain walls in the electrically poled states. Chemical deterioration along domain walls highlights vulnerability of SBT to ferroelectric fatigue. This study provides insight into crucial aspects for practical applications of SBT.
In the cockpit of the NASA's next generation of spacecraft, most of vehicle commanding will be carried out via electronic interfaces instead of hard cockpit switches. Checklists will be also displayed and completed on electronic procedure viewers rather than from paper. Transitioning to electronic cockpit interfaces opens up opportunities for more automated assistance, including automated root-cause diagnosis capability. The paper reports an empirical study evaluating two potential concepts for fault management interfaces incorporating two different levels of automation. The operator performance benefits produced by automation were assessed. Also, some design recommendations for spacecraft fault management interfaces are discussed.
The fabrication and operation of membrane switches are discussed. The membrane switch functions as a normally open, momentary contact, low-voltage pressure-sensitive device. Its design is a three-layer sandwich usually constructed of polyester film. Conductive patterns are deposited onto the inner side of top and bottom sheets by silk screening. The center spacer is then placed between the two circuit layers to form a sandwich, generally held together by an adhesive. When pressure is applied to the top layer, it flexes through the punched openings of the spacer to establish electrical contact between conductive pads of the upper and lower sheets, momentarily closing the circuit. Upon release of force the top sheet springs back to its normal open position. The membrane touch switch is being used in a rapidly expanding range of applications, including instrumentation, appliances, electronic games and keyboards. Its board acceptance results from its low cost, durability, ease of manufacture, cosmetic appeal and design flexibility. The principal electronic components in the membrane switch are the conductor and dielectric.
The purpose of this study was to examine the displacement damage susceptibility of the OMT1090 optical switch manufactured by TT Electronics / OPTEK Technology Inc. and compare it to the results of the OPB847TXV.
The many diverse polymorphic behaviors observed in organic electronic materials offer opportunities to modulate electronic properties through reversibly switching crystal structures. Here, we access the prolific polymorphism observed in two-dimensional quinoidal terthiophene via laser writing to locally heat and direct the phase transitions. We access a metastable polymorph IV through rapid cooling and observe distinct symmetry as well as packing through grazing incidence X-ray diffraction (GIXD). Using our open-source PolyChemPrint patterning platform, we direct laser heating to initiate the IV-I transition, switching the conductance by >2 orders of magnitude. Here, this is confirmed via a combination of GIXD and Raman spectroscopy. Finally, we demonstrate switching of transistor devices as well as discrete tuning of conductance via laser writing.