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At least 163 records · Page 9

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DOE OSTI2023

Imaging Field–Driven Melting of a Molecular Solid at the Atomic Scale

Solid–liquid phase transitions are basic physical processes, but atomically resolved microscopy has yet to capture their full dynamics. A new technique is developed for controlling the melting and freezing of self–assembled molecular structures on a graphene field–effect transistor (FET) that allows phase–transition behavior to be imaged using atomically resolved scanning tunneling microscopy. This is achieved by applying electric fields to 2,3,5,6–tetrafluoro–7,7,8,8–tetracyanoquinodimethane–decorated FETs to induce reversible transitions between molecular solid and liquid phases at the FET surface. Nonequilibrium melting dynamics are visualized by rapidly heating the graphene substrate with an electrical current and imaging the resulting evolution toward new 2D equilibrium states. An analytical model is developed that explains observed mixed–state phases based on spectroscopic measurement of solid and liquid molecular energy levels. The observed nonequilibrium melting dynamics are consistent with Monte Carlo simulations.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Machine Learning Discrimination and Ultrasensitive Detection of Fentanyl Using Gold Nanoparticle-Decorated Carbon Nanotube-Based Field-Effect Transistor Sensors

The opioid overdose crisis is a global health challenge. Fentanyl, an exceedingly potent synthetic opioid, has emerged as a leading contributor to the surge in opioid-related overdose deaths. The surge in overdose fatalities, particularly due to illicitly manufactured fentanyl and its contamination of street drugs, emphasizes the urgency for drug-testing technologies that can quickly and accurately identify fentanyl from other drugs and quantify trace amounts of fentanyl. In this paper, gold nanoparticle (AuNP)-decorated single-walled carbon nanotube (SWCNT)-based field-effect transistors (FETs) are utilized for machine learning-assisted identification of fentanyl from codeine, hydrocodone, and morphine. The unique sensing performance of fentanyl led to use machine learning approaches for accurate identification of fentanyl. Employing linear discriminant analysis (LDA) with a leave-one-out cross-validation approach, a validation accuracy of 91.2% is achieved. Meanwhile, density functional theory (DFT) calculations reveal the factors that contributed to the enhanced sensitivity of the Au-SWCNT FET sensor toward fentanyl as well as the underlying sensing mechanism. Finally, fentanyl antibodies are introduced to the Au-SWCNT FET sensor as specific receptors, expanding the linear range of the sensor in the lower concentration range, and enabling ultrasensitive detection of fentanyl with a limit of detection at 10.8 fg mL –1 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2026

Gate-All-Around Nanowire Field-Effect Transistors: A Historical Perspective

The development of transistor architectures, evolving from 2D planar metal-oxide-semiconductor field-effect transistors (MOSFETs) to FinFETs and then to gate-all-around nanowire (GAANW) FETs, plays a crucial role in downscaling technology nodes in the semiconductor industry. This perspective reviews the concept of MOSFETs and summarizes this historical development with particular emphasis on GAANW transistors due to their importance in next-generation technology for nodes below 3 nm. Specifically, the concept of GAANW transistors and their advantages over planar and FinFET devices for further scaling are presented, along with a discussion of their transition from early conceptual ideas to laboratory demonstrations and, ultimately, industrial adoption. Furthermore, potential solutions, such as complementary FETs (CFETs) and 2D semiconductor-based FETs, and their associated challenges for the future generation, known as the Angstrom Era, are discussed in a technological roadmap. In conclusion, this perspective may inspire both industry and academia in future research directions for realizing the Angstrom Era.

gate-all-around transistors↗

DOE OSTI2021

Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe 2 Nanosheet-Based Channels: Implications for Field-Effect Transistors

We report the fabrication of ohmic van der Waals (vdW) contacts to nearly intrinsic WSe 2 nanosheet-based channels in field-effect transistors (FETs) using degenerately p-doped MoS2 (p + -MoS2) as a contact metal. We demonstrate that accumulation-type ohmic contacts and the high device performance are achievable without electrostatically gating the drain/source contact regions despite the nearly intrinsic nature of WSe 2 . Back-gated WSe 2 FETs with p + -MoS 2 bottom contacts (which screen the back-gate electric field in the drain/source regions) exhibit linear output characteristics, a high on/off ratio of 10 8 , and a high two-terminal field-effect mobility up to ~200 cm2 V –1 s –1 at room temperature. Our theoretical modeling reveals that the p + -MoS 2 /WSe 2 vdW junction behaves like a metal/semiconductor ohmic contact signified by a vanishingly thin space-charge region of ~1 nm on the p + -MoS 2 side and a substantial accumulation layer of free holes on the WSe 2 side, which is further verified by additional temperature-dependent and dual-gated measurements of WSe 2 FETs. We attribute the formation of accumulation-type ohmic contacts free of a Schottky barrier to the near absence of Fermi-level pinning at the vdW interface and the work function of p + -MoS 2 being larger than the ionization energy of WSe 2 . This study represents an important step toward achieving low-resistance ohmic contacts to two-dimensional (2D) semiconductors by eliminating the Fermi-level pinning effects, which is expected to have significant implications for next-generation 2D semiconductor-based nanoelectronics.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

Abstract Two-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi 2 Te 4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn -junction diodes and sub-3-nm pin -junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip - and nin -junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.

Chemistry↗

DOE OSTI2020

Gas adsorption and light interaction mechanism in phosphorene-based field-effect transistors

Phosphorene-based field effect transistor (FET) structures were fabricated to study the gas- and photo-detection properties of phosphorene. The interplay between device performance and environmental conditions was probed and analyzed using in situ transport measurements. The device structures were exposed to different chemical and light environments to understand how they perform under different external stimuli. For the gas/molecule detection studies, inert (Ar), as well as, oxidizing (N 2 O), and reducing (H 2 and also N 2 H 4 ) agents were selected. The FET structure was exposed to these different gases, and the effect of each gas on the device resistance was measured. The study showed varying response towards different molecules. Specifically, no significant resistance change was observed upon exposure to Ar, while H 2 and N 2 H 4 were found to decrease the resistance and N 2 O had the opposite effect resulting in an increase in resistance. This work is the first demonstration for the detection of N 2 H 2 and N 2 O using a phosphorene-based system. These phosphorene-based FET structures were also found to be sensitive to light exposure. When such structure was irradiated with light, the current modulation was lost. The observed resistance changes can be explained as a result of the modulation of the Schottky barrier at the phosphorene-electrical contact interface due to the adsorbed molecules and charge transfer, and/or photo-induced carrier generation. Furthermore, the results were consistent with the transfer characteristics of V ds v s . V g .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2025

Expediting field-effect transistor chemical sensor design with neuromorphic spiking graph neural networks

Improving the sensitive and selective detection of analytes in a variety of applications requires accelerating the rational design of field-effect transistor (FET) chemical sensors. Achieving high-performance detection relies on identifying optimal probe materials that can effectively interact with target analytes, a process traditionally driven by chemical intuition and time-consuming trial-and-error methods. To address the difficulties in probe screening for FET sensor development, this work presents a methodology that combines neuromorphic machine learning (ML) architectures, specifically a hybrid spiking graph neural network (SGNN), with an enriched dataset of physicochemical properties through semi-automated data extraction using large language models. Achieving a classification accuracy of 0.89 in predicting sensor sensitivity categories, the SGNN model outperformed traditional ML techniques by leveraging its ability to capture both global physicochemical properties and sparse topological features through a hybrid modeling framework. Next-generation sensor design was informed by the actionable insights into the connections between material properties and sensing performance offered by the SGNN framework. Through virtual screening for the detection of per- and polyfluoroalkyl substances (PFAS) as a use case, the effectiveness of the SGNN model was further validated. Density functional theory simulations confirmed graphene as a promising active material for PFAS detection as suggested by the SGNN framework. By bridging gaps in predictive modeling and data availability, this integrated approach provides a strong foundation for accelerating advancements in FET sensor design and innovation.

Ferreira, Rodrigo Pires [Univ. of Chicago, IL (Uni↗

DOE OSTI2020

Experimental and modeling study of 1/ f noise in multilayer MoS2 and MoSe2 field-effect transistors

In field-effect transistors (FETs) with two-dimensional (2D) transition metal dichalcogenide channels, the dependence of field-effect mobility on atomic layer thickness has been studied and interpreted in terms of interface scattering and interlayer coupling resistance (Rint). However, a model for 1/f noise, such as in MoS2 and in MoSe2 FETs, for various contact metals and layer number thicknesses has not been reported. In this work, we have experimentally studied current–voltage and 1/f noise on MoS2 and MoSe2 FETs with source and drain contacts of high and low work function metals to understand both the mobility and the noise behavior. We have developed a noise model incorporating layer number dependent Hooge parameters and Rint. The noise and mobility models utilize screening lengths for charge, mobility, and Hooge parameter to describe the variation of these quantities with a layer number. Using our single model topology with appropriate fitting parameters for each material and each contact metal, the model captures the experimentally observed layer thickness dependence of the Hooge parameter. Our noise analysis is fully comprehensive and, hence, could be applied to any 2D layered systems.

Kwon, Jiseok↗

DOE OSTI2021

Aligned 2D carbon nanotube liquid crystals for wafer-scale electronics

Semiconducting carbon nanotubes promise faster performance and lower power consumption than Si in field-effect transistors (FETs) if they can be aligned in dense arrays. Here, we demonstrate that nanotubes collected at a liquid/liquid interface self-organize to form two-dimensional (2D) nematic liquid crystals that globally align with flow. The 2D liquid crystals are transferred onto substrates in a continuous process generating dense arrays of nanotubes aligned within ±6°, ideal for electronics. Nanotube ordering improves with increasing concentration and decreasing temperature due to the underlying liquid crystal phenomena. The excellent alignment and uniformity of the transferred assemblies enable FETs with exceptional on-state current density averaging 520 μA μm -1 at only -0.6 V, and variation of only 19%. FETs with ion gel top gates demonstrate subthreshold swing as low as 60 mV decade -1 . Deposition across a 10-cm substrate is achieved, evidencing the promise of 2D nanotube liquid crystals for commercial semiconductor electronics.

42 ENGINEERING↗

DOE OSTI2023

Nanoscale Ferroelectric Control of Novel Electronic States in Layered Two-Dimensional Materials (Final Report)

In this DOE Early Career project “Nanoscale Ferroelectric Control of Novel Electronic States in Layered Two-Dimensional Materials,” the PI’s group has combined ferroelectric field effect with nanoscale domain imaging and writing to design the electronic and optical properties of two-dimensional (2D) van der Waals materials, including graphene and transition metal dichalcogenides MoS2 and ReS2. The van der Waals materials have been prepared into field effect transistor (FET) devices with ferroelectric gates. Through domain patterning in a ferroelectric polymer PVDF-TrEF top-gate via conductive atomic force microscopy, the team has created programmable Schottky junctions in monolayer MoS 2 , where both barrier height and I-V rectifying polarity can be reconfigured. The transport anisotropy of monolayer to few-layer ReS 2 has been mapped out by defining the entire channel into an insulating state and creating nanoscale conducting paths along different directions through domain writing in the ferroelectric top-gate. The result shows that the conductivity along and perpendicular to the Re-chain can differ by >5.5x10 4 . Theoretical modeling points to the band origin of the transport anomaly and reveals the emergence of a flat band in few-layer ReS 2 . The interfacial epitaxial relation between ReS 2 and PVDF-TrFE further promotes the formation of close-packed, highly ordered PVDF-TrFE nanowires with width of 35 nm and 10 nm. Nonvolatile modulation of quantum Hall effect has been achieved in graphene FETs with a ferroelectric oxide Ba 0.4 Sr 0.6 TiO 3 back-gate. Scattering from the remote surface optical phonon in Ba 0.4 Sr 0.6 TiO 3 limits the room temperature mobility of graphene to be about 3x10 4 cm 2 /Vs. Steep-slope switching has been achieved in MoS 2 FETs back-gated by polycrystalline Pb(Zr,Ti)O 3 , which signals a static-state negative capacitance mode without involving an additional dielectric layer. Piezoresponse force microscopy studies show that the sub-threshold swing can be well correlated with the domain wall density in Pb(Zr,Ti)O 3 . The team also observes an unconventional filtering effect of the second harmonic generation response at the MoS 2 /Pb(Zr,Ti)O 3 heterointerface, which can be accounted for by the alignment between one of the polar axes of MoS 2 and the chiral dipole rotation at the surface of domain wall in Pb(Zr,Ti)O 3 . The research supported by this DOE grant has significantly advanced the fundamental understanding and functional design of ferroelectric/2D van der Waals heterostructures for their implementation towards energy applications.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Probing the Electronic and Opto-Electronic Properties of Multilayer MoS 2 Field-Effect Transistors at Low Temperatures

Transition metal dichalcogenides (TMDs)-based field-effect transistors (FETs) are being investigated vigorously for their promising applications in optoelectronics. Despite the high optical response reported in the literature, most of them are studied at room temperature. To extend the application of these materials in a photodetector, particularly at a low temperature, detailed understanding of the photo response behavior of these materials at low temperatures is crucial. Here we present a systematic investigation of temperature-dependent electronic and optoelectronic properties of few-layers MoS 2 FETs, synthesized using the mechanical exfoliation of bulk MoS 2 crystal, on the Si/SiO 2 substrate. Our MoS 2 FET show a room-temperature field-effect mobility μ FE ~40 cm 2 ·V -1 ·s -1 , which increases with decreasing temperature, stabilizing at 80 cm 2 ·V -1 ·s -1 below 100 K. The temperature-dependent (50 K < T < 300 K) photoconductivity measurements were investigated using a continuous laser source λ = 658 nm (E = 1.88 eV) over a broad range of effective illuminating laser intensity, P eff (0.02 μW < P eff < 0.6 μW). Photoconductivity measurements indicate a fractional power dependence of the steady-state photocurrent. The room-temperature photoresponsivity (R) obtained in these samples was found to be ~2 AW -1 , and it increases as a function of decreasing temperature, reaching a maximum at T = 75 K. The optoelectronic properties of MoS 2 at a low temperature give an insight into photocurrent generation mechanisms, which will help in altering/improving the performance of TMD-based devices for various applications.

2D materials↗

NASA NTRS1975

Instrumentation for measurement of aircraft noise and sonic boom

A jet aircraft noise and sonic boom measuring device which converts sound pressure into electric current is described. An electric current proportional to the sound pressure level at a condenser microphone is produced and transmitted over a cable, amplified by a zero drive amplifier and recorded on magnetic tape. The converter is comprised of a local oscillator, a dual-gate field-effect transistor (FET) mixer and a voltage regulator/impedance translator. A carrier voltage that is applied to one of the gates of the FET mixer is generated by the local oscillator. The microphone signal is mixed with the carrier to produce an electrical current at the frequency of vibration of the microphone diaphragm by the FET mixer. The voltage of the local oscillator and mixer stages is regulated, the carrier at the output is eliminated, and a low output impedance at the cable terminals is provided by the voltage regulator/impedance translator.

Zuckerwar, A. J.↗

NASA NTRS1984

Infrared-Responsive Monolithic MOS Circuit

Lead chalcogenide photoresistors integrated with FET amplifiers. Circuit combines voltage divider containing lead chalcogenide photoresistor with FET source follower. Source and drain of FET p-doped regions in underlying n-type silicon wafer. All other structures formed at or deposited above original surface plane of wafer.

Jhabvala, Muzban D.↗

NASA NTRS1983

Equivalent-circuit consideration of dual-gate MESFETs at high frequency

The simplified high-frequency equivalent circuit of a dual-gate FET is described. It is shown that the input impedance is similar to that of a single-gate FET but the output resistance and capacitance (parallel equivalent circuit) are higher. The output resistance and the transconductance decrease as frequency increases. The unilateral gain of a dual-gate FET rolls off 12 dB/octave.

Kim, B.↗

NASA NTRS1983

Recent developments in EHF Satcom technology

The state-of-the-art in EHF Satcom technology is assessed and hardware samples are described. Travelling wave tube amplifiers provide up to 30 percent efficiency for 20 GHz spaceborne operations and up to 20 percent efficiency at 30/44 GHz in ground operations. Solid-state power amplifiers incorporate FET and IMPATT diode technologies for 20-44 GHz transmissions using GaAs FETs and Si or GaAs diodes. Noise is reduced with loss image-enhanced mixers coupled to an IF FET amplifier, resulting ultimately in 6-7 dB noise levels compared to 19 dB gain. Finally, high power varactor upconverters have been developed to provide up to 50 mW RF output at at least 10 percent efficiency at frequencies up to 50 GHz.

Okean, H. C.↗

NASA NTRS1984

The 20 GHz GaAs monolithic power amplifier module development

The development of a 20 GHz GaAs FET monlithic power amplifier module for advanced communication applications is described. Four-way power combing of four 0.6 W amplifier modules is used as the baseline approach. For this purpose, a monolithic four-way traveling-wave power divider/combiner was developed. Over a 20 GHz bandwidth (10 to 30 GHz), an insertion loss of no more than 1.2 dB was measured for a pair of back-to-back connected divider/combiners. Isolation between output ports is better than 20 dB, and VSWRs are better than 21:1. A distributed amplifier with six 300 micron gate width FETs and gate and drain transmission line tapers has been designed, fabricated, and evaluated for use as an 0.6 W module. This amplifier has achieved state-of-the-art results of 0.5 W output power with at least 4 dB gain across the entire 2 to 21 GHz frequency range. An output power of 2 W was achieved at a measurement frequency of 18 GHz when four distributed amplifiers were power-combined using a pair of traveling-wave divider/combiners. Another approach is the direct common-source cascading of three power FET stages. An output power of up to 2W with 12 dB gain and 20% power-added efficiency has been achieved with this approach (at 17 GHz). The linear gain was 14 dB at 1 W output. The first two stages of the three-stage amplifier have achieved an output power of 1.6 W with 9 dB gain and 26% power-added efficiency at 16 GHz.

Source record↗

NASA NTRS1987

Electro-optical characterization of the Tektronix TK512M-011 charge-coupled device

An electrooptical characterization encompassing linearity, blooming, dark-count rate, charge-transfer efficiency (CTE), and quantum efficiency, is presented for a front/side-illuminated CCD with 512x512 format and 27x27-micron pixels. The detailed noise characteristics of the CCD-output FET are reported. While very good low light level CTE is obtained in the parallel-shift direction, CTE problems arise in the serial direction. The output FET noise is equivalent to 5-12 electrons, depending on FET operating conditions and system bandwidth.

Epperson, Patrick M.↗

NASA NTRS1990

AlSb/InAs/AlSb quantum wells

Researchers studied the InAs/AlSb system recently, obtaining 12nm wide quantum wells with room temperature mobilities up to 28,000 cm(exp 2)/V center dot S and low-temperature mobilities up to 325,000 cm(exp 2)/V center dot S, both at high electron sheet concentrations in the 10(exp 12)/cm(exp 2) range (corresponding to volume concentrations in the 10(exp 18)/cm(exp 2) range). These wells were not intentionally doped; the combination of high carrier concentrations and high mobilities suggest that the electrons are due to not-intentional modulation doping by an unknown donor in the AlSb barriers, presumably a stoichiometric defect, like an antisite donor. Inasmuch as not intentionally doped bulk AlSb is semi-insulating, the donor must be a deep one, being ionized only by draining into the even deeper InAs quantum well. The excellent transport properties are confirmed by other observations, like excellent quantum Hall effect data, and the successful use of the quantum wells as superconductive weak links between Nb electrodes, with unprecendentedly high critical current densities. The system is promising for future field effect transistors (FETs), but many processing problems must first be solved. Although the researchers have achieved FETs, the results so far have not been competitive with GaAs FETs.

Kroemer, Herbert↗