SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
An IR and XPS study of the low-pressure, radiofrequency, glow-discharge plasma copolymerization of ethylene (ET) and tetrafluoroethylene (TFE) is presented. The potential for creating Tefzel- or Teflon-like coatings on various polymeric substrates for use in advanced life support systems is examined.
Thin homoepitaxial films of gallium phosphide (GaP) have been grown by remote plasma enhanced chemical vapor deposition utilizing in situ-generated phosphine precursors. The GaP forming reaction is kinetically controlled with an activation energy of 0.65 eV. The increase of the growth rate with increasing radio frequency (RF) power between 20 and 100 W is due to the combined effects of increasingly complete excitation and the spatial extension of the glow discharge toward the substrate; however, the saturation of the growth rate at even higher RF power indicates the saturation of the generation rate of phosphine precursors at this condition. Slight interdiffusion of P into Si and Si into GaP is indicated from GaP/Si heterostructures grown under similar conditions as the GaP homojunctions.
An investigation was conducted to examine the friction and wear behavior of amorphous hydrogenated carbon (a-C:H) films in sliding contact with silicon nitride pins in both dry nitrogen and humid air environments. Amorphous hydrogenated carbon films approximately 0.06 micron thick were deposited on silicon nitride flat substrates by using the 30 kHz ac glow discharge of a planar plasma reactor. The results indicate that an increase in plasma deposition power gives an increase in film density and hardness. The high-density a-C:H films deposited behaved tribologically much like bulk diamond. In the dry nitrogen environment, a tribochemical reaction produced a substance, probably a hydrocarbon-rich layer, that decreased the coefficient of friction. In the humid air environment, tribochemical interactions drastically reduced the wear life of a-C:H films and water vapor greatly increased the friction. Even in humid air, effective lubrication is possible with vacuum-annealed a-C:H films. The vacuum-annealed high-density a-C:H film formed an outermost superficial graphitic layer, which behaved like graphite, on the bulk a-C:H film. Like graphite, the annealed a-C:H film with the superficial graphitic layer showed low friction when adsorbed water vapor was present.
Sulfur removed from nickel-base superalloy used to make gas-turbine blades by heating alloy and simultaneously subjecting it to sputtering by directed Ar(Sup+) ions from ion gun or from glow discharge. Reduction of sulfur content of superalloy by factor of 10 increases lifetime of turbine blade made of alloy by similar factor, because stability of protective surface oxide formed during operation of turbine increased.
Thin homoepitaxial films of gallium phosphide (GaP) were grown by remote plasma enhanced chemical vapor deposition utilizing in situ generated phosphine precursors. The GaP forming reaction is kinetically controlled with an activation energy of 0.65 eV. The increase of the growth rate with increasing radio frequency (rf) power between 20 and 100 W is due to the combined effects of increasingly complete excitation and the spatial extension of the glow discharge toward the substrate, however, the saturation of the growth rate at even higher rf power indicates the saturation of the generation rate of phosphine precursors at this condition. Slight interdiffusion of P into Si and Si into GaP is indicated from GaP/Si heterostructures grown under similar conditions as the GaP homojunctions.
A modified dc-diode ion plating system, by utilizing a metallic screen cage as a cathode, is introduced for coating nonconductors such as ceramics. Screen cage ion plating (SCIP) is used to apply Ag and Au lubricating films on aluminum oxide surfaces. This process has excellent ability to coat around corners to produce three-dimensional coverage of the substrate. A dramatic increase in adhesion is achieved when plating is performed in a reactive 50 percent O2 - 50 percent Ar glow discharge compared to the adhesion when plating is performed in 100 percent Ar. The presence of oxygen ion assistance contributes to the excellent adhesion as measured in a pull-type adhesion tester. The Ag and Au film adhesion is significantly increased (less than 70MPa) and generally exceeds the cohesion of the substrate such that portions of the alumina are pulled out.
Low-temperature photoluminescence (PL) spectra and glow discharge mass spectroscopy (GDMS) were measured on ZnSe starting materials provided by various vendors and on bulk crystals grown from these starting materials by physical vapor transport (PVT) to study the effects of purification and contamination during crystal growth process. The purification effect of pre-growth heat treatments and the PVT process is evidenced from the GDMS results which showed orders of magnitude reduction in the Li and Na concentration and a factor of 3 reduction in the 0 content after growth. The PL spectra showed that the strong emissions associated with Li (or Na) in one of the starting materials disappeared after growth. To evaluate the contamination of the crystal during the high temperature growth process three growth runs were processed using similar growth parameters but with different furnace environments. The GDMS results showed orders of magnitude increase in the Al and Si contents after growth. The PL spectra suggest that the Al contamination was originated from the fused silica ampoule and the Inconel cartridge might have been the cause for the broad Cu green and Cu red bands observed in one of the grown crystal.
ZnSe bulk crystals were grown by self-seeded physical vapor transport technique in horizontal and vertical configurations. The impurities and defects in the grown crystals were studied by glow discharge mass spectroscopy (GDMS) and low temperature photoluminescence (PL) measurements. The PL results on the starting material and the grown crystals are consistent with the low impurity levels measured by GDMS. The crystalline quality of the grown crystals were examined by synchrotron white beam X-ray topography (SWBXT) and high resolution triple X-ray diffraction (HRTXD). The SWBXT shows that, aside from twins, the overall crystalline quality of the vapor grown ZnSe crystals, especially in the contactless grown region, was quite high. The HRTXD results are in line with the SWBXT findings. The comparison between the HRTXD on a chemical-mechanically polished and a cleaved surface seems to indicate that polishing damage can obscure the true microstructure in the as-grown ZnSe crystals.
A new plasma device, the Fisk Plasma Source (FPS), has been developed at Fisk University. This plasma device is used to study the physics of low temperature plasmas and plasma-material interactions. The FPS device is a stainless steel vacuum 6-way cross vacuum vessel with at 10-inch inner diameter. Low temperature argon plasmas are generated using DC glow discharge and thermionic filament techniques. Spatial profiles of the plasma density, plasma potential, and electron temperature are measured using Langmuir probes. We present initial experimental measurements of density and temperature profiles in the FPS device. Experimental and theoretical studies of low frequency oscillations observed in the FPS device are also presented.
The UAH Spinning Terrella Experiment has been modified to include the effect of a second magnet. This is a simple laboratory demonstration of the well-known double-dipole approximation to the Earth's magnetosphere. In addition, the magnet has been biassed $\sim$-400V which generates a DC glow discharge and traps it in a ring current around the magnet. This ring current is easily imaged with a digital camera and illustrates several significant topological properties of a dipole field. In particular, when the two dipoles are aligned, and therefore repel, they emulate a northward IMF Bz magnetosphere. Such a geometry traps plasma in the high latitude cusps as can be clearly seen in the movies. Likewise, when the two magnets are anti-aligned, they emulate a southward IMF Bz magnetosphere with direct feeding of plasma through the x-line. We present evidence for trapping and heating of the plasma, comparing the dipole-trapped ring current to the cusp-trapped population. We also present a peculiar asymmetric ring current produced in by the plasma at low plasma densities. We discuss the similarities and dissimilarities of the laboratory analog to the collisionless Earth plasma, and implications for the interpretation of IMAGE data.
Low-temperature photoluminescence (PL) spectra were measured on ZnSe starting materials provided by various vendors and on bulk crystals grown from these starting materials by physical vapor transport (PVT) to study the effects of purification and contamination during PVT process. The impurity levels in one set of starting material/grown crystal were also measured by glow discharge mass spectroscopy (GDMS). The purification effect of pre-growth heat treatments and the PVT process is evidenced from the GDMS results which showed orders of magnitude reduction in the Li and Na concentration and a factor of 3 reduction in the O content after growth. The PL spectra showed that the strong emissions associated with Li (or Na) in one of the starting materials disappeared after growth. The GDMS results also showed increases in the At and Si contents by orders of magnitude after growth. To evaluate the contamination of the crystal during the high temperature growth process, three growth runs were processed using similar growth parameters but different furnace environments. The PL spectra suggest that the At contamination originated from the fused silica ampoule and that the Inconel cartridge might have been the cause of the broad Cu green and Cu red bands observed in one of the grown crystals.
In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies are being developed at NASA-Ames Research Center using a multi-discipline approach. The first step is to understand the basic physics of the chemical reactions in the area of plasma reactors and processes. Low pressure glow discharges are indispensable in the fabrication of microelectronic circuits. These plasmas are used to deposit materials and also etch fine features in device fabrication. However, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Although a great deal of laboratory-scale research has been performed on many of these processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. Our present research involves the study of such plasmas. An inductively-coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics. This ICP source generates plasmas with higher electron densities and lower operating pressures than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The research goal is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas phase and surface reaction rates, species concentration, temperature, ion energy distribution, and electron number density.
The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions. The following are the research progress in the past two years. In-situ monitoring of partial pressure by optical absorption technique and visual observation of the growing crystal were performed during vapor growth of ZnSe. Low-temperature photoluminescence (PL) spectra and glow discharge mass spectroscopy (GDMS) were measured on ZnSe starting materials provided by various vendors and on bulk crystals grown from these starting materials by physical vapor transport (PVT) to study the effects of purification and contamination during crystal growth process. Optical characterization was performed on wafers sliced from the grown crystals of ZnSe, ZnTe and ZnSe(1-x),Te(x), (0<x<0.4). Energy band gaps at room temperature were determined from optical transmission measurements and a best fit curve to the band gap vs. composition, x, data gives a bowing parameter of 1.45. Low-temperature photoluminescence (PL) spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for the ZnSe(1-x),Te(x), samples, 0.09<x<0.39. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted as being associated with the exciton bound to Te clusters because of the high Te content in these samples. To validate numerical codes, in-situ monitoring during the PVT of HgI2 was designed. Optical absorption spectra of the vapor phase over HgI2 were measured for wavelengths between 200 and 600nm at sample temperatures between 349 and 610K. The Beer's Law constants for 15 wavelengths between 200 and 440 nm were determined. From these constants the vapor pressure of HgI2 was established as a function of temperature for the liquid and the solid Beta-phases To characterize the growth conditions during the PVT growth of In-doped ZnSe the optical absorbance of the vapor phase over the In-Se system were measured and were used to obtain the partial pressures of Se2(g) and In2Se(g).
This Minnowbrook IV 2003 workshop on Transition and Unsteady Aspects of Turbomachinery Flows includes the following topics: 1) Current Issues in Unsteady Turbomachinery Flows; 2) Global Instability and Control of Low-Pressure Turbine Flows; 3) Influence of End Wall Leakage on Secondary Flow Development in Axial Turbines; 4) Active and Passive Flow Control on Low Pressure Turbine Airfoils; 5) Experimental and Numerical Investigation of Transitional Flows as Affected by Passing Wakes; 6) Effects of Freestream Turbulence on Turbine Blade Heat Transfer; 7) Bypass Transition Via Continuous Modes and Unsteady Effects on Film Cooling; 8) High Frequency Surface Heat Flux Imaging of Bypass Transition; 9) Skin Friction and Heat Flux Oscillations in Upstream Moving Wave Packets; 10) Transition Mechanisms and Use of Surface Roughness to Enhance the Benefits of Wake Passing in LP Turbines; 11) Transient Growth Approach to Roughness-Induced Transition; 12) Roughness- and Freestream-Turbulence-Induced Transient Growth as a Bypass Transition Mechanism; 13) Receptivity Calculations as a Means to Predicting Transition; 14) On Streamwise Vortices in a Curved Wall Jet and Their Effect on the Mean Flow; 15) Plasma Actuators for Separation Control of Low Pressure Turbine Blades; 16) Boundary-Layer Separation Control Under Low-Pressure-Turbine Conditions Using Glow-Discharge Plasma Actuators; 17) Control of Separation for Low Pressure Turbine Blades: Numerical Simulation; 18) Effects of Elevated Free-Stream Turbulence on Active Control of a Separation Bubble; 19) Wakes, Calming and Transition Under Strong Adverse Pressure Gradients; 20) Transitional Bubble in Periodic Flow Phase Shift; 21) Modelling Spots: The Calmed Region, Pressure Gradient Effects and Background; 22) Modeling of Unsteady Transitional Flow on Axial Compressor Blades; 23) Challenges in Predicting Component Efficiencies in Turbomachines With Low Reynolds Number Blading; 24) Observations on the Causal Relationship Between Blade Count and Developing Rotating Stall in a Four Stage Axial Compressor; 25) Experimental and Numerical Study of Non-Linear Interactions in Transonic Nozzle Flow; 26) Clocking Effects on a Modern Stage and One-Half Transonic Turbine; 27) DNS and LES of Transition on Turbine Blades; 28) The Use of Cellular Automata in Modeling the Transition; 29) Predicting Unsteady Buffet Onset Using RANS Solutions; 30) Transition Modelling With the SST Turbulence Model and an Intermittency Transport; and 31) Equation Workshop Summary Transcript
In the case of unsealed melt growth of an array of II-VI compounds, namely, CdTe, CdZnTe and ZnSe, there is a tremendous amount of experimental data describing the correlations between melt conditions and crystal quality. The results imply that the crystallinity quality can be improved if the melt was markedly superheated or long-time held before growth. It is speculated that after high superheating the associated complex dissociate and the spontaneous nucleation is retarded. In this study, crystals of CdTe were grown from melts which have undergone different thermal history by the unseeded gradient freeze method using the Universal Multizone Crystallizator (UMC). The effects of melt conditions on the quality of grown crystal were studied by various characterization techniques, including Synchrotron White Beam X-ray Topography (SWSXT), infrared microscopy, chemical analysis by glow discharge mass spectroscopy (GDMS), electrical conductivity and Hall measurements.
Plasma enhanced chemical vapour deposition (PECVD) has been recently used for the production of vertically aligned carbon nanotubedfibers (CN) directly on substrates. These structures are potentially important technologically as electron field emitters (e.g. microguns, microwave amplifiers, displays), nanoelectrodes for sensors, filter media, superhydrophobic surfaces and thermal interface materials for microelectronics. A parametric study on the growth of CN grown by glow discharge dc-PECVD is presented. In this technique, a substrate containing thin film Ni catalyst is exposed to C2H2 and NH3 gases at 700 C. Without plasma, this process is essentially thermal CVD which produces curly spaghetti-like CN as seen in Fig. 1 (a). With the plasma generated by biasing the substrate at -6OOV, we observed that the CN align vertically during growth as shown in Fig. l(b), and that the magnitude of the applied substrate bias affects the degree of alignment. The thickness of the thin film Ni catalyst was found to determine the average diameter and inversely the length of the CN. The yield and density of the CN were controlled by the use of different diffusion barrier materials under the Ni catalyst. Patterned CN growth [Fig. l(c)], with la variation in CN diameter of 4.1% and 6.3% respectively, is achieved by lithographically defining the Ni thin film prior to growth. The shape of the structures could be varied from very straight nanotube-like to conical tip-like nanofibers by increasing the ratio of C2H2 in the gas flow. Due to the plasma decomposition of C2H2, amorphous carbon (a-C) is an undesirable byproduct which could coat the substrate during CN growth. Using a combination of depth profiled Auger electron spectroscopy to study the substrate and in-situ mass spectroscopy to examine gas phase neutrals and ions, the optimal conditions for a-C free growth of CN is determined.
The FY 2005 CDDF projects were selected from the following spaceport and range technology and science areas: fluid system technologies; spaceport structures and materials; command, control, and monitoring technologies; and biological sciences (including support for environmental stewardship). The FY 2005 CDDF research projects involved development of the following: a) Capacitance-based moisture sensors to optimize plant growth in reduced gravity; b) Commodity-free calibration methods; c) Application of atmospheric plasma glow discharge to alter the surface properties of polymers for improved electrostatic dissipation characteristics; d) A wipe-on, wipe-off chemical process to remove lead oxides found in paint; e) A robust metabolite profiling platform for better understanding the "law" of biological regulation; f) An explanation of the excavation processes that occur when a jet of gas impinges on a bed of sand; g) "Smart coatings" to detect and control corrosion at an early stage to prevent further corrosion h) A model that can produce a reliable diagnosis of the quality of a software product; i) The formulation of advanced materials to meet system safety needs to minimize electrostatic charges, flammability, and radiation exposure; j) A lab-based instrument that uses the electro-optic Pockels effect to make static electric fields visible; k) A passive volatile organic compound (VOC) cartridge to filter, identify, and quantify VOCs flowing into or emanating from plant flight experiments.
In this study, crystals of CdTe were grown from melts by the unseeded vertical gradient freeze method. The quality of grown crystal were studied by various characterization techniques including Synchrotron White Beam X-ray Topography (SWBXT), chemical analysis by glow discharge mass spectroscopy (GDMS), low temperature photoluminescence (PL), and Hall measurements. The SWBXT images from various angles show nearly strain-free grains, grains with inhomogeneous strains, as well as twinning nucleated in the shoulder region of the boule. The GDMS chemical analysis shows the contamination of Ga at a level of 3900 ppb, atomic. The low temperature PL measurement exhibits the characteristic emissions of a Ga-doped sample. The Hall measurements show a resistivity of 1 x l0(exp 7) ohm-cm at room temperature to 3 x 10(exp 9) ohm-cm at 78K with the respective hole and electron concentration of 1.7 x 10(exp 9) cm(exp -3) and 3.9 x 10(exp 7) cm(exp -3) at room temperature.