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At least 163 records · Page 9

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NASA NTRS1974

Silicon germanium technology program at JPL

Review of the results of a program aimed at obtaining a better understanding of the long-term performance of a thermoelectric generator using silicon germanium. The results obtained concern the contact resistivity of the thermoelectric couples, the electrical resistance of the multifoil thermal insulation, and the application of resistance coatings to the unicouples in order to prevent the loss of output power due to internal shunting paths.

Stapfer, G.↗

NASA NTRS1975

Sublimation behavior of silicon nitride /Si3N4/ coated silicon germanium /SiGe/ unicouples

For the Multi-Hundred Watt (MHW) Radioisotope Thermoelectric Generator (RTG), the silicon germanium unicouples are coated with silicon nitride to minimize degradation mechanisms which are directly attributable to material sublimation effects. A program is under way to determine the effective vapor suppression of this coating as a function of temperature and gas environment. The results of weight loss experiments, using Si3N4 coated hot shoes (SiMo), operating over a temperature range from 900 C to 1200 C, are analyzed and discussed. These experiments were conducted both in high vacuum and at different pressures of carbon monoxide (CO) to determine its effect on the coating. Although the results show a favorable vapor suppression at all operating temperatures, the pressure of the CO and the thickness of the coating have a decided effect on the useful lifetime of the coating.

Stapfer, G.↗

NASA NTRS1977

Quantitative determination of zero-gravity effects on electronic materials processing germanium crystal growth with simultaneous interface demarcation. Experiment MA-060

Experiment MA-060 was designed to establish the crystal growth and segregation characteristics of a melt in a directional solidification configuration under near zero-g conditions. The interface demarcation technique was incorporated into the experiment since it constitutes a unique tool for recording the morphology of the growth rate throughout solidification, and for establishing an absolute time reference framework for all stages of the solidification process. An extensive study was performed of the germanium crystals grown during the Apollo-Soyuz Test Project mission. It was found that single crystal growth was achieved and that the interface demarcation functioned successfully. There was no indication that convection driven by thermal or surface tension gradients was present in the melt. The gallium segregation, in the absence of gravity, was found to be fundamentally different in its initial and its subsequent stages from that of the ground-based tests. None of the existing theoretical models for growth and segregation can account for the observed segregation behavior in the absence of gravity.

Gatos, H. C.↗

NASA NTRS1977

Germanium-silicon solid solutions

An experiment on melting and directional crystallization of an antimony (Sb) doped germanium silicon (GeSi) solid solution was designed for the Apollo-Soyuz Test Project (ASTP) to study the possibility of using zero-g conditions for obtaining solid-solution monocrystals with uniformly distributed components. Crystallization in the zero-g environment did not occur under ideal stationary growth and segregation conditions. Crystallization under zero-g conditions revealed the heterogeneous nature of Si and Sb distribution in the cross sections of crystals. The presence of the radial thermal gradient in the multipurpose furnace could be one of the reasons for such Si and Sb distribution. The structure of space-grown crystals correlates with the nature of heterogeneities of Si and Sb distribution in crystals. The type of surface morphology and the contour observed in space-grown crystals were never observed in ground-based crystals and indicate the absence of wetting of the graphitized walls of the ampoule by the melt during melting and crystallization.

Zemskov, V. S.↗

NASA NTRS1977

Fabrication and performance of intrinsic germanium photodiodes

The paper presents fabrication details for an intrinsic germanium photodiode developed for study of atmospheric constituents, the airglow and auroras in the 1-2 micron spectral range. Attention is given to cutting of the single crystal, spreading of the lithium dispersion, sputtering of a gold coating, and surface passivation. A wavelength response curve is presented.

Beiting, E. J., III↗

NASA NTRS1977

Fine energy resolution survey of the sky with a germanium gamma-ray spectrometer

A fine-energy-resolution survey (38 to 2700 keV) of the sky has been performed from a spinning polar-orbiting satellite with a cooled germanium spectrometer. The measurements, performed with a fast time resolution (32 ms), permit one to analyze the energy spectra from repeated noon-midnight orbits in selected portions of the local daytime or nighttime sky. During the initial period of the experiment, the sky was surveyed in two broad intervals spanning the galactic plane at longitudes of approximately 255 to 328 deg and 99 to 168 deg, respectively. In the former interval a significant increase in counting rate was observed when the spectrometer viewed the galactic plane. Locally generated backgrounds were removed from the galactic-plane spectrum by subtracting, on a spin-for-spin basis, the contribution measured at a viewing direction with a comparable declination north of the celestial equator. The net spectra from the galactic plane have been examined for evidence of gamma-ray lines. The possible presence of lines near 1121 and 1369 keV emitted from the galactic plane over the galactic longitudinal interval approximately 255 deg to approximately 328 deg is suggested by the data, but better statistics are needed to establish their existence firmly. Comparisons are made with previously reported extraterrestrial lines with assumed normalizations made for the different viewing directions in the two experiments.

Imhof, W. L.↗

NASA NTRS1976

Development of doped-germanium photoconductors for astronomical observations at wavelengths from 30 to 120 micrometers

Technology was developed for production of doped-germanium detectors which have optimized performance in the 30- to 120-micrometer wavelength range and are capable of achieving the objectives of the Infrared Astronomy Satellite space mission. The work of this phase was divided into the following major tasks: (1) growth of Ge:Ga crystals from high-purity starting material with Ga concentrations different from that previously produced, and development of a zone leveling method to produce a uniform Ga doping concentration; (2) growth of uncompensated Ge:Be crystals from high-purity starting material with a range of Be concentrations between 10 to the 14th power and 10 to the 16th power atoms/cubic cm; (3) evaluation of crystals by means of Hall effect and resistance measurements as a function of temperature; (4) fabrication and test of detectors made from both Ge:Be and Ge:Ga crystals to determine the relative performance between different crystals. Correlation of detector test data with material evaluation data and analysis of how to further optimize detector performance.

Bratt, P. R.↗

NASA NTRS1978

Continued development of doped-germanium photoconductors for astronomical observations at wavelengths from 30 to 120 micrometers

The development of doped-germanium detectors which have optimized performance in the 30- to 120-mu m wavelength range and are capable of achieving the objectives of the infrared astronomical satellite (IRAS) space mission is discussed. Topics covered include the growth and evaluation of Ge:Ga and Ge:Be crystals, procedures for the fabrication and testing of detectors, irradiance calculations, detector responsivity, and resistance measurements through MOSFET. Test data are presented in graphs and charts.

Bratt, P. R.↗

NASA NTRS1978

High-energy proton radiation damage of high-purity germanium detectors

Quantitative studies of radiation damage in high-purity germanium gamma-ray detectors due to high-energy charged particles have been carried out; two 1.0 cm thick planar detectors were irradiated by 6 GeV/c protons. Under proton bombardment, degradation in the energy resolution was found to begin below 7 x 10 to the 7th protons/sq cm and increased proportionately in both detectors until the experiment was terminated at a total flux of 5.7 x 10 to the 8th protons/sq cm, equivalent to about a six year exposure to cosmic-ray protons in space. At the end of the irradiation, the FWHM resolution measured at 1332 keV stood at 8.5 and 13.6 keV, with both detectors of only marginal utility as a spectrometer due to the severe tailing caused by charge trapping. Annealing these detectors after proton damage was found to be much easier than after neutron damage.

Pehl, R. H.↗

NASA NTRS1979

Gallium-doped germanium, evaluation of photoconductors, part 1

Gallium-doped germanium far infrared detectors were evaluated at low temperatures and low background simulating the space environment. Signal and noise characteristics were determined for detector temperatures in the 2K to 4K range. Optimum performance occurs at about 2.5K for all devices tested. The minimum average NEP in the 40-130 micron region was found to be approximately 4 x 10 to the minus 17th power watt Hz(-1/2) at a frequency of 1 Hz.

Moore, W. J.↗

NASA NTRS1981

Radiation damage of the HEAO C-1 germanium detectors

The effects of radiation damage from proton bombardment of the four HEAO C-1 high purity germanium detectors have been measured and compared to predictions. Because of the presence of numerous gamma-ray lines in the detector background spectra and because of the relatively long exposure time of the HEAO 3 satellite to cosmic-ray and trapped protons, it has been possible to measure both the energy and time dependence of radiation damage. After 100 d in orbit, each of the four detectors has been exposed to approximately 3 x 10 to the 7th protons/sq cm, and the average energy resolution at 1460 keV had degraded from 3.2 keV fwhm to 8.6 keV fwhm. The lines were all broadened to the low energy side although the line profile was different for each of the four detectors. The damage-related contribution to the degradation in energy resolution was found to be linear in energy and proton influence.

Mahoney, W. A.↗

NASA NTRS1981

Germanium accumulation-mode charge-injection-device process

Gallium doped germanium is suitable for applications in the detection of far infrared radiation. Measurements were made on experimental photoconductors (PCs), accumulation mode charge injection devices (AMCIDs), and the SSPC (a switched, sampled PC alternative to the AMCID). The results indicate that the SSPC, which had a responsivity near 1.5 amp/watt, is desirable for use in two dimensional detector arrays.

Moore, T. G.↗

NASA NTRS1982

Thermophysical properties of germanium for thermal analysis of growth from the melt

The thermal diffusivity of Ge has been measured over a temperature range from 300 C to 1010 C which includes values for the melt. Specific heat has been measured from room temperature to 727 C. Thermal conductivity has been calculated over the same temperature range as the diffusivity measurements. These data are reported along with the best values from the literature for the other parameters which are required to calculate the temperature and convective fields for the growth of germanium by the Bridgman method. These parameters include the specific heat, the viscosity, the emissivity, and the density as a function of temperature.

Crouch, R. K.↗

NASA NTRS1983

Three holes bound to a double acceptor - Be(+) in germanium

A double acceptor binding three holes has been observed for the first time with photoconductive far-infrared spectroscopy in beryllium-doped germanium single crystals. This new center, Be(+), has a hole binding energy of about 5 meV and is only present when free holes are generated by ionization of either neutral shallow acceptors or neutral Be double acceptors. The Be(+) center thermally ionizes above 4 K. It disappears at a uniaxial stress higher than about a billion dyn/sq cm parallel to (111) as a result of the lifting of the valence-band degeneracy.

Haller, E. E.↗

NASA NTRS1984

A position-sensitive germanium detector for gamma-ray astronomy

The critical problem in high-resolution cosmic gamma-ray spectroscopy in the energy range from 0.02 to 10 MeV is the limited spectral sensitivity of the detectors used. This results from the small effective area of the detectors and the high background noise due to induced radioactivity and scattering in the detectors' high-energy particle environment. The effective area can be increased by increasing the number of detectors, but this becomes prohibitive because of the size and expense of the resulting instrument. We have taken a new approach: a segmented large-volume germanium gamma-ray detector which can effectively discriminate against internal background yet maintain the high spectral resolution and efficiency of conventional coaxial Ge detectors. To verify this concept, a planar detector divided into two segments has been fabricated and laboratory measurements agree well with Monte Carlo calculations. A large coaxial detector which will be divided into five segments is being built using the techniques developed for the planar detector. Monte Carlo calculations show that the sensitivity (minimum detectable flux) of the segmented coaxial detector is a factor of 2-3 better than conventional detectors because of the reduction in the internal background.

Varnell, L. S.↗

NASA NTRS1984

Segmentation and pulse shape discrimination techniques for rejecting background in germanium detectors

The possibility of rejecting the internal beta-decay background in coaxial germanium detectors by distinguishing between the multi-site energy losses characteristic of photons and the single-site energy losses of electrons in the range 0.2 - 2 MeV is examined. The photon transport was modeled with a Monte Carlo routine. Background rejection by both multiple segmentation and pulse shape discrimination techniques is investigated. The efficiency of a six 1 cm-thick segment coaxial detector operating in coincidence mode alone is compared to that of a two-segment (1 cm and 5 cm) detector employing both front-rear coincidence and PSD in the rear segment to isolate photon events. Both techniques can provide at least 95 percent rejection of single-site events while accepting at least 80 percent of the multi-site events above 500 keV.

Roth, J.↗

NASA NTRS1986

High-Quality, Thin-Film Germanium Single Crystals

Germanium (Ge) has crystallographic characteristics similar to GaAs and compatible with heteroepitaxial growth of GaAs. Further, since efficient heteroface cells already grown on thick Ge single crystals, Ge is excellent substrate candidate for thin-film cells. Required is single-crystal Ge thin film. Method developed for epitaxially growing highquality 10-um Ge thin films on ,100. NaCl substrates by plasma-enhanced chemical-vapor deposition (PECVD) and then separating Ge films by either melt-away or differential-thermal shear stress techniques. Free-standing films used for growth of AlxGa1-xAs/GaAs heteroface cells by similar techniques.

Outlaw, R. A.↗

NASA NTRS1986

A procedure to visualize the melt-solid interface in Bridgman grown germanium and lead tin telluride

An X-ray and gamma-ray analysis technique has been developed which makes it possible to observe the melt solid interface during semiconductor crystal growth in a Bridgman furnace. Experiments have been carried out to observe the interface movement and shape in germanium as well as in lead tin telluride by means of the new method, and the results are discussed in detail. X-ray and gamma-ray radiographs of the melt-solid interfaces in the two semiconductor crystal specimens, are provided.

Barber, P. G.↗