Search NASA⌕ Search

SEARCH · Search NASA

Results for “Hall measurements”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Constraints on the onset of color transparency from quasielastic 12 C ⁡(𝑒,𝑒′⁢𝑝) up to 𝑄 2 = 14.2 (GeV/𝑐) 2

Quasielastic scattering on 12 C ⁡(𝑒,𝑒′⁢𝑝) was measured in Hall C at Jefferson Lab for spacelike four-momentum transfer squared 𝑄 2 in the range of 8–14.2(GeV/𝑐) 2 with proton momenta up to 8.3GeV/𝑐. The experiment was carried out in the upgraded Hall C at Jefferson Lab. It used the existing high-momentum spectrometer and the new super-high-momentum spectrometer to detect the scattered electrons and protons in coincidence. The nuclear transparency was extracted as the ratio of the measured yield to the yield calculated in the plane wave impulse approximation. Additionally, the transparency of the 1⁢𝑠 1/2 and 1⁢𝑝 3/2 shell protons in 12 C was extracted, and the asymmetry of the missing momentum distribution was examined for hints of the quantum chromodynamics prediction of color transparency. Furthermore, all of these results were found to be consistent with traditional nuclear physics and inconsistent with the onset of color transparency.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

Discovery of an Intrinsic Antiferromagnetic Semiconductor EuSc 2 Te 4 With Magnetism‐Driven Nonlinear Transport

Magnetic topological materials have recently emerged as a promising platform for studying quantum geometry by the nonlinear transport in thin film devices. In this work, an antiferromagnetic (AFM) semiconductor EuSc₂Te₄ as the first bulk crystal that exhibits quantum geometry-driven nonlinear transport is reported. This material crystallizes into an orthorhombic lattice with AFM order below 5.2 K and a bandgap of less than 50 meV. The calculated band structure aligns with the angle-resolved photoemission spectroscopy spectrum. The AFM order preserves combined space-time inversion symmetry but breaks both spatial inversion and time-reversal symmetry, leading to the nonlinear Hall effect (NLHE). Nonlinear Hall voltage measured in bulk crystals appears at zero field, peaks near the spin-flop transition as the field increases, and then diminishes as the spin moments align into a ferromagnetic order. This field dependence, along with the scaling analysis of the nonlinear Hall conductivity, suggests that the NLHE of EuSc₂Te₄ involves contributions from quantum metric, in addition to extrinsic contributions, such as spin scattering and junction effects. Furthermore, this NLHE is found to have the functionality of broadband frequency mixing, indicating its potential applications in electronics. This work reveals a new avenue for studying magnetism-induced nonlinear transport in magnetic materials.

36 MATERIALS SCIENCE↗
NASA NTRS1967

Hall Mobility in SrTio (sub 3)

Conductivity and Hall coefficient measurements for electron mobilities in strontium titanate, discussing electron-phonon coupling and cryogenic experiments

ELECTRON MOBILITY↗
DOE OSTI2020

Large tunable anomalous Hall effect in the kagome antiferromagnet U 3 Ru 4 Al 12

The Berry curvature in magnetic systems is attracting interest due to the potential tunability of topological features via the magnetic structure. f electrons, with their large spin-orbit coupling, abundance of noncollinear magnetic structures, and high electronic tunability, are attractive candidates to search for tunable topological properties. In this study, we measure anomalous Hall effect (AHE) in the distorted kagome heavy fermion antiferromagnet U 3 Ru 4 Al 12 . Furthermore, a large intrinsic AHE in high fields reveals the presence of a large Berry curvature. Moreover, the fields required to obtain the large Berry curvature are significantly different between B ∥ a and B ∥ a * , providing a mechanism to control the topological response in this system. Theoretical calculations illustrate that this sensitivity may be due to the heavy fermion character of the electronic structure. These results shed light on the Berry curvature of a strongly correlated band structure in magnetically frustrated heavy fermion materials but also emphasize 5 f electrons as an ideal playground for studying field-tuned topological states.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Complex transport and magnetism in inhomogeneous mixed valence Ce 3 Ir 4 Ge 13

We report the discovery of Ce 3 Ir 4 Ge 13 , a Remeika phase with a complex array of structural, electronic, and magnetic properties. In this work, our single crystal x-ray diffraction measurements show that Ce 3 Ir 4 Ge 13 forms in the tetragonally distorted $I4_1/amd$ space group, which has three distinct rare earth sites. The electrical resistivity is almost temperature independent over three decades in temperature, from 0.4 K to 400 K, while the Hall coefficient measurements are consistent with a low-carrier semimetal. Magnetic susceptibility measurements reveal an effective moment, $μ^\text{exp}_\text{eff} = 1.87μ_B/$Ce, that falls significantly short of the expected value for Ce 3+ , suggesting that two of the rare earth sites are occupied by magnetic Ce 3+ while the third is occupied by nonmagnetic Ce 4+ . Upon cooling, Ce 3 Ir 4 Ge 13 first enters a short range magnetically ordered state below $T_\text{SRO}$ = 10 K, marked by a deviation from Curie-Weiss behavior in susceptibility and a broad field-independent heat capacity anomaly. At lower temperatures, we observe a second, sharper peak in the heat capacity at $T^\ast$ = 1.7 K, concurrent with a splitting of the field-cooled and zero-field-cooled susceptibilities. A small resistivity drop at $T^\ast$ suggests a loss of spin disorder scattering consistent with a magnetic ordering or spin freezing transition. Ce 3 Ir 4 Ge 13 is therefore a rare example of an inhomogeneous mixed valence compound with a complex array of thermodynamic and transport properties.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Universal behavior of the bosonic metallic ground state in a two-dimensional superconductor

Anomalous metallic behavior, marked by a saturating finite resistivity much lower than the Drude estimate, has been observed in a wide range of two-dimensional superconductors. Utilizing the electrostatically gated LaAlO 3 /SrTiO 3 interface as a versatile platform for superconductor-metal quantum phase transitions, we probe variations in the gate, magnetic field, and temperature to construct a phase diagram crossing from superconductor, anomalous metal, vortex liquid, to the Drude metal state, combining longitudinal and Hall resistivity measurements. We find that the anomalous metal phases induced by gating and magnetic field, although differing in symmetry, are connected in the phase diagram and exhibit similar magnetic field response approaching zero temperature. Namely, within a finite regime of the anomalous metal state, the longitudinal resistivity linearly depends on the field while the Hall resistivity diminishes, indicating an emergent particle-hole symmetry. The universal behavior highlights the uniqueness of the quantum bosonic metallic state, distinct from bosonic insulators and vortex liquids.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Physical properties and electronic structure of single-crystal KCo 2 As 2

We present a method for producing high quality KCo 2 As 2 crystals, stable in air and suitable for a variety of measurements. X-ray diffraction, magnetic susceptibility, electrical transport and heat capacity measurements confirm the high quality and an absence of long range magnetic order down to at least 2 K. Residual resistivity values approaching 0.25 µΩ cm are representative of the high quality and low impurity scattering, and a Sommerfeld coefficient γ = 7.3 mJ/mol K 2 signifies weaker correlations than the Fe-based counterparts. Together with Hall effect measurements, angle-resolved photoemission experiments reveal a Fermi surface consisting of electron pockets at the center and corner of the Brillouin zone, in line with theoretical predictions and in contrast to the mixed carrier types of other pnictides with the ThCr 2 Si 2 structure. A large, linear magnetoresistance of 200% at 14 T, together with an observed linear and hyperbolic, rather than parabolic, band dispersions are unusual characteristics of this compound.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2018

Numerical Studies of Hall Thruster Acceleration Region Electron Transport

Azimuthal direction 1-D and azimuthal and axial direction 2-D Particle in Cell (PIC) simulations of the Hall thruster acceleration and near-plume regions are presented. The axial extent of the 2-D computational domain is based on the ExB drift parameter, 𝑫𝑬𝒙𝑩, the number of times around the channel an electron ExB drifts before being scattered. With only high energy main beam ions, the simulations produced a broad potential profile in the acceleration region. The addition of a small amount of ionization in the acceleration domain at a rate consistent with Hall thruster parameters causes the potential profile to develop two distinct regions. In the upstream portion of the computational domain, the potential profile is very steep, typical of Hall thruster acceleration regions. In the downstream portion, the potential profile is almost flat, like potentials in Hall thruster near plume regions. This bifurcation happens naturally; there is no other change in code parameters between the two results. Without the addition of a small amount of ionization in the acceleration region, the axial electron transport is very low. With ionization, the calculated ratio of electron current to ion current is the same order of those measured in Hall thrusters. This suggests that in regions with lower energy electrons and ions, plasma waves are effective in allowing crossfield transport, and axial electric fields are small. In the acceleration region, the plasma waves are less effective at scattering the energetic electrons, and high axial electric fields are needed to produce the observed cross-field electron transport.

Ortega, Alejandro Lopez↗
DOE OSTI2023

Capacitive discharge in flash experiments: A discussion of the charged species

Abstract We report on the discharge of the capacitance formed at the electrodes in flash experiments with yttria stabilized zirconia. The experiments were carried out by disconnecting the current, and, instead, short circuiting the electrodes through a resistor. The time dependent voltage across the resistor was measured; the ratio yielded the discharge current. The current decayed exponentially with time, as expected in an RC circuit, which allowed the measurement of the capacitance. Experiments were carried out in two ways. In one case the specimens were flashed within a glove box filled with Ar (< 1 ppm O 2 ): these yielded electronic conductors. In the other case the specimens were flashed in ambient air: while electronically conducting in‐flash these specimens recover their prior insulating behavior as soon as the current is turned off. The stored charge was two orders of magnitude greater in the Ar experiments. Rather unexpectedly, the sign of the voltage expressed at the electrodes was opposite in experiments carried out in air and in Ar. The capacitance measured in the discharge experiments is attributed to the formation of space charge adjacent to the electrodes. In the case of Ar experiments, the capacitance is very large, approaching 1 F; in this case the space charge is expected to be constituted from ions. In the air experiments the specimen becomes insulating, trapping the electrons as a space charge. Hall effect measurements of the carrier density and X‐ray photoelectron spectroscopy characterization of electronically conducting single crystal specimen of cubic zirconia are reported.

Materials Science↗
DOE OSTI2020

Acoustoelectric drag current in vanadium oxide films

Two different Mott insulator wires, vanadium dioxide and vanadium sesquioxide, were prepared on the piezoelectric LiNbO 3 substrates. Coupling of acoustic waves propagating in LiNbO 3 with free carriers in vanadium oxide gives rise to the acoustoelectric effect that manifests itself as the generation of direct electric current by the acoustic wave. According to a phenomenological model, the value of the effect strongly depends on the wires conductivity, which, for the vanadium-oxide films, changes by a few orders of magnitude. We demonstrated that this yields a significant enhancement of the direct current (DC) current generated in the wires at the metal–insulator transition temperatures. The sign of the generated DC voltage is different for excitations by surface and bulk acoustic wave modes, which may happen due to reverse wave propagation at the substrate surface. For each resonance mode, polarities of the generated DC signal are the same in both wires, despite the signs of charge carriers being different for these materials. It was shown that two complementary techniques (acoustoelectric and Hall effect measurements) yield opposite signs of charge carriers in VO 2 .

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Software Architecture and Hardware Organization in Mu2e Solenoid Field Mapping System

Herein, the Mu2e field mapping system is designed to produce high accuracy field maps of the detector solenoid used in the experiment. The data acquisition system is mobile and uses a self-propelled mapper with rotating arms equipped with 3D Hall probes. The measurements require not only accurate magnetic field readouts, but also accurate locations of all Hall probes while measuring data. The latter is accomplished by using the laser tracker to measure positions of several retroreflectors on the field mapper during data acquisition. The measurement process requires scanning the whole space inside the large solenoid and takes many hours to complete, which necessitates its full automation. The automation software includes control of the mapper, readout of Hall and NMR probes and control of a laser tracker, including prediction of retroreflector positions and execution of quality control checks. The software architecture and data acquisition hardware of the field mapping system are described, with special attention given to control of the laser tracker and its integration with the rest of the system.

3d hall probes↗
DOE OSTI2020

Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control

A defect quasi Fermi level (dQFL) control process based on above bandgap illumination was applied to control H and V N -complexes, which are the main contributors to the passivation and self-compensation, respectively, in Mg:GaN grown via metalorganic chemical vapor deposition. Secondary ion mass spectrometry measurements confirmed that the total Mg incorporation was unaffected by the process. However, the total H concentration was reduced to similar levels obtained by post-growth thermal activation prior to any annealing treatment. Similarly, the 2.8 eV emission in the photoluminescence spectra, attributed to compensating V N and its complexes, was reduced for the dQFL-process samples. After thermal activation and Ni/Au contact deposition, Hall effect measurements revealed lower resistivities (increased mobilities and free hole concentrations) for dQFL-grown samples with Mg doping concentrations above and below 2 × 10 19 cm -3 . All these results demonstrate that the dQFL process can effectively reduce the H-passivation and self-compensation of the Mg:GaN films.

36 MATERIALS SCIENCE↗
NASA NTRS1971

Hall effect study of electron irradiated Si(Li)

Measurement of the Hall coefficient as a function of temperature between 15 and 300 K allows the separate determination of donor and acceptor concentrations in silicon samples which were irradiated at 240 K by 1-MeV electrons and then thermally annealed at 300 K. In both lithium- and phosphorus-doped silicon irradiation increased the acceptor concentration and decreased the donor concentration due to the formation of vacancy donor pairs. Annealing did not change either concentration in phosphorus-doped silicon and caused both concentrations to decrease in silicon doped with moderate amounts of lithium. In addition to this, in both lithium- and phosphorus-doped silicon the concentration and energy level of the A center were measured at each point in the sample's history. This experiment was limited to float-zoned silicon doped with less than 6 x 10 to the 14th power donors per cu cm.

Stannard, J.↗
NASA NTRS1985

The Hall Effect

The experimental procedure consists of the measurement of the Hall coefficient, resistivity, and Hall mobility as a function of temperature of a sample of gallium arsenides before and after irradiation with low and high energy protons. Work has begun on the development of the theory and subsequently experiments will be designed and performed.

Source record↗
DOE OSTI2021

Bulk dissipation in the quantum anomalous Hall effect

Even at the lowest accessible temperatures, measurements of the quantum anomalous Hall (QAH) effect have indicated the presence of parasitic dissipative conduction channels. There is no consensus whether parasitic conduction is related to processes in the bulk or along the edges. Here, we approach this problem by comparing transport measurements of Hall bar and Corbino geometry devices fabricated from Cr-doped (BiSb) 2 Te 3 . We identify bulk conduction as the dominant source of dissipation at all values of temperature and in-plane electric field. Furthermore, we observe identical breakdown phenomenology in both geometries, indicating that breakdown of the QAH phase is a bulk process. The methodology developed in this study could be used to identify dissipative conduction mechanisms in new QAH materials, ultimately guiding material development towards realization of the QAH effect at higher temperatures

36 MATERIALS SCIENCE↗
DOE OSTI2021

Direct TPE measurement via $e^+p/e^-p$ scattering at low $\varepsilon$ in Hall A

The proton elastic form factor ratio can be measured either via Rosenbluth separation in an experiment with unpolarized beam and target, or via the use of polarization degrees of freedom. However, data produced by these two approaches show a discrepancy, increasing with $Q^2$. The proposed explanation of this discrepancy - two-photon exchange - has been tested recently by three experiments. The results support the existence of a small two-photon exchange effect but cannot establish that theoretical treatments at the measured momentum transfers are valid. At larger momentum transfers, theory remains untested, and without further data, it is impossible to resolve the discrepancy. Additionally, a positron beam at Jefferson Lab allows us to directly measure two-photon exchange over an extended $Q^2$ and $\epsilon$ range with high precision. With this, we can validate whether the effect reconciles the form factor ratio measurements, and test several theoretical approaches, valid in different parts of the tested $Q^2$ range. In this proposal, we describe a measurement program in Hall A that combines the Super BigBite, BigBite, and High Resolution Spectrometers to directly measure the two-photon effect. Though the limited beam current of the positron beam will restrict the kinematic reach, this measurement will have very small systematic uncertainties, making it a clean probe of two photon exchange.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2020

Epitaxial growth of rock salt MgZrN 2 semiconductors on MgO and GaN

Ternary nitride compound semiconductors have attracted recent attention as electronic materials since their properties can be tuned by cation stoichiometry and ordering. A recently discovered example is MgZrN 2 , a ternary analog to the rock salt semiconductor ScN. MgZrN 2 has a larger bandgap and stronger dielectric response than the binary compound. Polycrystalline thin films of MgZrN 2 have been studied, but demonstration of high-quality growth is still required to establish its suitability for technological applications. Here, we report on epitaxial growth of MgZrN 2 thin films on (100) and (111) MgO substrates and (001) GaN templates. The MgZrN 2 composition is confirmed by Rutherford backscattering spectrometry, showing no oxygen in the film except for a thin surface oxide layer. Epitaxial growth results in MgZrN 2 with x-ray diffraction rocking curves with a full-width at half-maximum in the range of 0.3–3.0°, depending on the substrate. Transmission electron microscopy analysis of the MgZrN 2 film grown on a (111) MgO substrate confirms epitaxial growth and shows a sharp film/substrate interface. In-plane temperature-dependent Hall effect measurements show that the material is an n-type semiconductor with a relatively high concentration ( n 300K ≈ 10 19 –10 20 cm -3 ) of thermally activated electrons. Room-temperature transport measurements show a conductivity of 25 S cm -1 and a Seebeck coefficient of -80 μ V K -1 . Overall, these results provide an important step toward integration of rock salt MgZrN 2 with other technological nitrides for device applications.

36 MATERIALS SCIENCE↗