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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

Photoluminescence Study of Long Wavelength Superlattice Infrared Detectors

In this paper, the relation between the photoluminescence (PL) intensity and the PL peak wavelength was studied. A linear decrease of the PL intensity with increasing cut-off wavelength of long wavelength infrared CBIRDs was observed at 77 K and the trend remained unchanged in the temperature range 10 - 77 K. This relation between the PL intensity and the peak wavelength can be favorably used for comparison of the optical quality of samples with different PL peak wavelengths. A strong increase of the width of the PL spectrum in the studied temperature interval was observed, which was attributed to thermal broadening.

superlattice↗
NASA NTRS1977

Multilayered (Hg,Cd)Te infrared detector

Multilayered mercury-cadmium telluride photoconductive detectors were developed which are capable of providing individual coverage of three separate spectral wavelength bands without the use of beam splitters. The multilayered "three-color" detector on a single dewar takes the place of three separate detector/filter/dewar units and enables simpler and more reliable mechanical and optical designs for multispectral scanners and radiometers. Wavelength channel design goals (in micrometers) were: 10.1 to 11.0, 11.0 to 12.0, and 13.0. Detectivity for all channels was 1 x 10 to the 10th power cm-Hz 1/2/Watt. A problem occurred in finding an epoxy layer which had good infrared transmission properties and which also was chemically and mechanically compatible with HgCdTe processing techniques. Data on 6 candidate bonding materials are surveyed and discussed.

Rae, W. G.↗
NASA NTRS1990

InAs/Ga(1-x)In(x)Sb superlattices for infrared detector applications

The successful growth of InAs/Ga(1-x)In(x)Sb superlattices and their optical and structural characterization is discussed. Samples were grown by molecular beam epitaxy at fairly low substrate temperatures (less than 400 C). Structural quality was assessed by reflection high energy electron difrraction, transmission electron microscopy, and x ray diffraction. Excellent structures were achieved for growth on thick, strain relaxed GaSb buffer layers on GaAs substrates, despite a residual threading dislocation density of 10(exp 9)cm(exp -2) originating at the GaSb/GaAs interface. Despite a lattice mismatch of 1.7 percent, InAs/Ga(0.75)In(0.25)Sb superlattices are observed to be free of misfit dislocations at the thicknesses examined here, owing to the close lattice match between the superlattice and GaSb, which evenly distributes compressive and tensile stresses between the InAs and Ga(0.75)In(0.25)Sb layers. Photoluminescence and photoconductivity measurements indicate that the energy gaps of the strain-layer superlattices are smaller than those of InAs/GaSb superlattices with the same layer thicknesses, and are in agreement with the theoretical predictions of Smith and Mailhiot. Energy gaps of 80 to 250 meV (15 to 5 microns) have been measured for InAs/Ga(0.75)In(0.25)Sb superlattices with 45 to 25 A/25 A layer thickness. Results demonstrate that far-infrared cutoff wavelengths are compatible with the thin superlattice layers required for strong optical absorption in type-II superlattices.

Miles, Richard H.↗
NASA NTRS1966

Twin helix system produces fast scan in infrared detector

Two rotating wheels in orthogonal relationship with helicoidal reflecting surfaces mounted on their outer rims achieve a linear speed without normal time loss in their return motion. The pitch of the helicoidal surfaces equals the displacement that the mirrors must traverse.

Vanzetti, R.↗
NASA NTRS1972

Advances in pyroelectric infrared detectors.

Recent improvements in the pyroelectric detector have been due to the development of locked-in polarization, further reduction of the FET leakage current, and reduction of short circuit noise. The pyroelectric detector has been successfully employed in these typical applications: (1) thermograph using a single detector and X-Y scanner, (2) focal plane reticle scanner, (3) linear array thermal imaging system, (4) pyroelectric image tube, (5) radiometers (vertical temperature profile radiometer, carbon dioxide sensor), (6) high speed spectrometer, and (7) laser detector.

Beerman, H. P.↗
NASA NTRS1976

Infrared detector Dewars - Increased LN2 hold time and vacuum jacket life spans

IR detector Dewars commonly suffer from shorter than desired LN2 hold times and insulation jacket vacuum corruption over relatively short time periods. In an attempt to solve this problem for a 9144 detector Dewar, small 1 liter/s appendage ion pumps were selected for continuous pumping of the vacuum jackets. This procedure extended LN2 hold times from 20 to 60 h and virtually eliminated vacuum jacket corruption. Thus the detector systems are usable continuously over periods of 6 months or more.

Jennings, D. E.↗
NASA NTRS1979

Ge photocapacitive MIS infrared detectors

An undoped Ge photocapacitive detector is reported which has peak normalized detectivities at wavelengh 1.4 microns and chopping frequencies 13-1000 Hz of 9 x 10 to the 12th, 4 x 10 to the 9th cm Hz to the 1/2th/W operating respectively at temperatures 77, 195, and 295 K. The observed temperature, spectral, and frequency response of the signal and noise are explained in terms of the measured space charge and interface state properties of the device.

Binari, S. C.↗
NASA NTRS1980

Advanced methods for preparation and characterization of infrared detector materials

Mercury cadmium telluride crystals were prepared by the Bridgman method with a wide range of crystal growth rates and temperature gradients adequate to prevent constitutional supercooling under diffusion-limited, steady state, growth conditions. The longitudinal compositional gradients for different growth conditions and alloy compositions were calculated and compared with experimental data to develop a quantitative model of the crystal growth kinetics for the Hg(i-x)CdxTe alloys, and measurements were performed to ascertain the effect of growth conditions on radial compositional gradients. The pseudobinary HgTe-CdTe constitutional phase diagram was determined by precision differential thermal analysis measurements and used to calculate the segregation coefficient of Cd as a function of x and interface temperature. Computer algorithms specific to Hg(1-x)CdxTe were developed for calculations of the charge carrier concentrations, charge carrier mobilities, Hall coefficient, optical absorptance, and Fermi energy as functions of x, temperature, ionized donor and acceptor concentrations, and neutral defect concentrations.

Lehoczky, S. L.↗
NASA NTRS1981

Advanced methods for preparation and characterization of infrared detector materials

Differential thermal analysis data were obtained on mercury cadmium telluride alloys in order to establish the liquidus temperatures for the various alloy compositions. Preliminary theoretical analyses was performed to establish the ternary phase equilibrium parameters for the metal rich region of the phase diagram. Liquid-solid equilibrium parameters were determined for the pseudobinary alloy system. Phase equilibrium was calculated and Hg(l-x) Cd(x) Te alloys were directionally solidified from pseudobinary melts. Electrical resistivity and Hall coefficient measurements were obtained.

Lehoczky, S. L.↗