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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS2010

Evaluation of a High Temperature SOI Half-Bridge MOSFET Driver, Type CHT-HYPERION

Silicon-On-Insulator (SOI) technology utilizes the addition of an insulation layer in its structure to reduce leakage currents and to minimize parasitic junctions. As a result, SOIbased devices exhibit reduced internal heating as compared to the conventional silicon devices, consume less power, and can withstand higher operating temperatures. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a commercial-off-the-shelf (COTS) SOI half-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Patterson, Richard↗
NASA NTRS2010

Use of a Frequency Divider to Evaluate an SOI NAND Gate Device, Type CHT-7400, for Wide Temperature Applications

Frequency dividers constitute essential elements in designing phase-locked loop circuits and microwave systems. In addition, they are used in providing required clocking signals to microprocessors and can be utilized as digital counters. In some applications, particularly space missions, electronics are often exposed to extreme temperature conditions. Therefore, it is required that circuits designed for such applications incorporate electronic parts and devices that can tolerate and operate efficiently in harsh temperature environments. While present electronic circuits employ COTS (commercial-off- the-shelf) parts that necessitate and are supported with some form of thermal control systems to maintain adequate temperature for proper operation, it is highly desirable and beneficial if the thermal conditioning elements are eliminated. Amongst these benefits are: simpler system design, reduced weight and size, improved reliability, simpler maintenance, and reduced cost. Devices based on silicon-on-insulator (SOI) technology, which utilizes the addition of an insulation layer in the device structure to reduce leakage currents and to minimize parasitic junctions, are well suited for high temperatures due to reduced internal heating as compared to the conventional silicon devices, and less power consumption. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a divide-by-two frequency divider circuit built using COTS SOI logic gates was evaluated over a wide temperature range and thermal cycling to determine suitability for use in space exploration missions and terrestrial fields under extreme temperature conditions.

Patterson, Richard L.↗
NASA NTRS2019

Initial Results from the GEM Challenge on the Spacecraft Surface Charging Environment

Spacecraft surface charging during geomagnetically disturbed times is one of the most important causes of satellite anomalies. Predicting the surface charging environment is one prevalent task of the geospace environment models. Therefore, the Geospace Environment Modeling (GEM) Focus Group "Inner Magnetosphere Crossenergy/Population Interactions" initiated a communitywide challenge study to assess the capability of several inner magnetosphere ring current models in determining surface charging environment for the Van Allen Probes orbits during the 17 March 2013 storm event. The integrated electron flux between 10 and 50 keV is used as the metrics. Various skill scores are applied to quantitatively measure the modeling performance against observations. Results indicate that no model consistently perform the best in all of the skill scores or for both satellites. We find that from these simulations the ring current model with observational flux boundary condition and Weimer electric potential driver generally reproduces the most realistic flux level around the spacecraft. A simple and weaker VollandStern electric field is not capable of effectively transporting the same plasma at the boundary toward the Earth. On the other hand, if the ring current model solves the electric field selfconsistently and obtains similar strength and pattern in the equatorial plane as the Weimer model, the boundary condition plays another crucial role in determining the electron flux level in the inner region. When the boundary flux spectra based on magnetohydrodynamics (MHD) model/empirical model deviate from the shape or magnitude of the observed distribution function, the simulation produces poor skill scores along Van Allen Probes orbits.

Yu, Yiqun↗
NASA NTRS2002

Flip chip packaging of a MEMS neuro-prosthetic system

A joint research team from California Institute of Technology and Jet Propulsion Laboratory is developing a fully miniaturized, smart implantable neuro-prosthetic system, by combining integrated electronics with Micro Electro Mechanical Structure (MEMS) based electrode arrays. The packaging group of this project team has been tasked with designing and fabricating a package to interface electrically between a MEMS electrode array, capable of extracting signals from brain, and an electronic chip, capable of providing on chip conditioning/processing of extracted data, while delivering the output data to a detector located outside the body.

flip↗
NASA NTRS1976

A calculation of the 1S-2S transition in He/+/ induced by electron impact

Integrated cross sections, at electron impact energies of 3.0 to 3.3 Ryd, for the 1S-2S transition in He(+) are in reasonable agreement with experiments by Peart and Dolder (1973). A variant of the distorted-wave procedure is used and briefly described. In addition, the differential cross sections for the 1S-2S transition at impact energies of 3.005, 3.010, and 3.200 Ryd are presented.

Weatherford, C. A.↗
NASA NTRS1965

Electronic ampere-hour integrator is accurate to one percent

Electronic ampere-hour integrator is based on current-to-frequency conversion. It operates on low power and is accurate to one percent. This device can measure the ampere-hour capacity of batteries and can be adapted for other functions.

Paulkovich, J.↗
NASA NTRS1990

ISLE: Intelligent Selection of Loop Electronics. A CLIPS/C++/INGRES integrated application

The Intelligent Selection of Loop Electronics (ISLE) system is an integrated knowledge-based system that is used to configure, evaluate, and rank possible network carrier equipment known as Digital Loop Carrier (DLC), which will be used to meet the demands of forecasted telephone services. Determining the best carrier systems and carrier architectures, while minimizing the cost, meeting corporate policies and addressing area service demands, has become a formidable task. Network planners and engineers use the ISLE system to assist them in this task of selecting and configuring the appropriate loop electronics equipment for future telephone services. The ISLE application is an integrated system consisting of a knowledge base, implemented in CLIPS (a planner application), C++, and an object database created from existing INGRES database information. The embedibility, performance, and portability of CLIPS provided us with a tool with which to capture, clarify, and refine corporate knowledge and distribute this knowledge within a larger functional system to network planners and engineers throughout U S WEST.

Fischer, Lynn↗
NASA NTRS2023

An Examination of Heavy Ion-Induced Persistent Visual Error Signatures in an Electronic Display Driver Integrated Circuit

Heavy ion irradiation of a display driver integrated circuit (DDIC) was performed, and persistent visual error signatures were captured. Based on the heavy ion results, error signatures were localized to configuration registers motivate potential mitigation techniques and observations relating to single event effect susceptibility. DDICs serve as an integral component of integrated display systems that will require the development of single event effects test methodologies in anticipation of extensive use in crewed spacecrafts outside of the Earth’s geomagnetic protection.

Electronic Displays↗
NASA NTRS2005

Integral cross sections for the direct excitation of the A 3 (sigma) u +, B 3 (pi) g, W 3 (delta) u, B' 3 (sigma) u -, a' 1 (sigma) u -, a 1 (pi) g, w 1 (delta) u, and C 3 (pi) u electronic states in

Integral cross sections for electron impact excitation out of the ground state (X 1(sigma)g +) to the A 3(sigma)u +, B 3(pi)g, W 3(delta)u, B' 3(sigma)u -, a' 1(sigma)u -, a 1(pi)g, w 1(delta)u, and states in N2 are reported at incident energies ranging between 10 and 100 eV. These data have been derived by integrating differential cross sections previously reported by this group. New differential cross section measurements for the a 1(pi)g state at 200 eV are also presented to extend the range of the reported integral cross sections for this state, which is responsible for the emissions of the Lyman-Birge-Hopfield band system (a 1(pi)g (rightwards arrow) X 1(sigma)g +). The present results are compared and critically evaluated against existing cross sec In general, the present cross sections are smaller than previous results at low impact energies from threshold through the excitation function peak regions. These lower cross sections have potentially significant implications on our understanding of UV emissions in the atmospheres of Earth and Titan.

Ultraviolet Imaging Spectograph↗
NASA NTRS1976

The 1976 Helios and Pioneer solar conjunctions-continuing corroboration of the link between Doppler noise and integrated signal path electron density

Observed Doppler noise (rms phase jitter) from the 1976 solar conjunctions of the Helios 1 and 2 and the Pioneer 10 and 11 spacecraft was processed with a recently developed Doppler noise model ISEDB. Good agreement is obtained between the observed data and the model. Correlation is shown between deviations from the ISEDB model and sunspot activity, but it is insufficient to be modeled. Correlation is also shown between ISEDB model deviations for (spacecraft) signal paths on the same side of the sun.

Berman, A. L.↗
NASA NTRS1985

Integral functions of electron lateral distribution and their fluctuations in electron-photon cascades

Monte Carlo simulated lateral distribution functions for electrons of EPC developing in lead, at superhigh energies (.1-1 PeV) for depths t or = 60 c.u. delta t=1t. c.u. are presented. The higher moment characteristics, i.e., variation, asymmetry, excess, are presented along with analytical solutions for the same characteristics at fixed observation level calculated to theory approximations A and B by using numerical inversion of the Laplace transformation. The conclusion is made of a complex, usually non-Gaussian shape of the function of the particle number distribution within a circle of given radius at fixed depth.

Ivanenko, I. P.↗
NASA NTRSDate not supplied

Pt/HTCC Alumina based Electronic Packaging System and Integration Processes for High Temperature Harsh Environment Applications

Electronic devices capable of operation at 500°C are required for long term Venus surface missions, as well as for in situ monitoring and control of next generation aeronautical engines. High temperature sensors and electronics can also find many applications in military, and energy and automobile industries. Various silicon carbide (SiC) sensors and electronic devices have been developed for operation at 500 °C, and a compatible packaging system is needed for long term test and deployment of these high temperature devices. High temperature co-fired ceramics (HTCC) alumina with platinum (Pt) conductor was proposed for high temperature electronic packaging. A prototype Pt/HTCC alumina packaging system including chip-level package and circuit board has been briefly reported previously for long-term electrical testing of SiC integrated circuits at 500 °C, and brief testing at much higher temperatures. HTCC alumina is an excellent dielectric material with acceptable dielectric constant and low dielectric loss over wide temperature and frequency ranges. Pt is chemically noble and can be co-fired with HTCC alumina in air ambient producing a viable electronic packaging material system for high temperature applications. This paper presents a more detailed description of this packaging system including prototype low power packages and circuit boards based on HTCC alumina and Pt metallization for 500°C and other harsh environment applications. The key technical considerations for chip-level packaging and circuit board assembly, including materials and processes for 500 °C durable wire-bonding and SiC die attach, and integration of multi-chip circuit boards, are presented. Experimental test results of this packaging approach applied to SiC integrated circuits at 500 °C and 700°C are discussed as well.

electronic packaging↗
NASA NTRSDate not supplied

Pt/HTCC Alumina based Electronic Packaging System and Integration Processes for High Temperature Harsh Environment Applications

Electronic devices capable of operation at 500°C are required for long term Venus surface missions, as well as for in situ monitoring and control of next generation aeronautical engines. High temperature sensors and electronics can also find many applications in military, and energy and automobile industries. Various silicon carbide (SiC) sensors and electronic devices have been developed for operation at 500 °C, and a compatible packaging system is needed for long term test and deployment of these high temperature devices. High temperature co-fired ceramics (HTCC) alumina with platinum (Pt) conductor was proposed for high temperature electronic packaging. A prototype Pt/HTCC alumina packaging system including chip-level package and circuit board has been briefly reported previously for long-term electrical testing of SiC integrated circuits at 500 °C, and brief testing at much higher temperatures. HTCC alumina is an excellent dielectric material with acceptable dielectric constant and low dielectric loss over wide temperature and frequency ranges. Pt is chemically noble and can be co-fired with HTCC alumina in air ambient producing a viable electronic packaging material system for high temperature applications. This paper presents a more detailed description of this packaging system including prototype low power packages and circuit boards based on HTCC alumina and Pt metallization for 500°C and other harsh environment applications. The key technical considerations for chip-level packaging and circuit board assembly, including materials and processes for 500 °C durable wire-bonding and SiC die attach, and integration of multi-chip circuit boards, are presented. Experimental test results of this packaging approach applied to SiC integrated circuits at 500 °C and 700°C are discussed as well.

High temperature↗
NASA NTRS1982

Problems related to the integration of fault tolerant aircraft electronic systems

Problems related to the design of the hardware for an integrated aircraft electronic system are considered. Taxonomies of concurrent systems are reviewed and a new taxonomy is proposed. An informal methodology intended to identify feasible regions of the taxonomic design space is described. Specific tools are recommended for use in the methodology. Based on the methodology, a preliminary strawman integrated fault tolerant aircraft electronic system is proposed. Next, problems related to the programming and control of inegrated aircraft electronic systems are discussed. Issues of system resource management, including the scheduling and allocation of real time periodic tasks in a multiprocessor environment, are treated in detail. The role of software design in integrated fault tolerant aircraft electronic systems is discussed. Conclusions and recommendations for further work are included.

Bannister, J. A.↗
NASA NTRS1988

A molecular shift register based on electron transfer

An electronic shift-register memory at the molecular level is described. The memory elements are based on a chain of electron-transfer molecules and the information is shifted by photoinduced electron-transfer reactions. This device integrates designed electronic molecules onto a very large scale integrated (silicon microelectronic) substrate, providing an example of a 'molecular electronic device' that could actually be made. The design requirements for such a device and possible synthetic strategies are discussed. Devices along these lines should have lower energy usage and enhanced storage density.

Hopfield, J. J.↗
NASA NTRS1977

The effect of 1 to 5 keV electrons on the reproductive integrity of microorganisms

Microorganisms were exposed to simulated space environment in order to assess the effect of electrons in the energy range 1 to 5 keV on their colony-forming ability. The test system consisted of an electron gun and power supply, a dosimetry subsystem, and a vacuum subsystem. The system was capable of current densities ranging from 0.1 nA/sq cm to 5 micro A/sq cm on a 25 sq on target and an ultimate vacuum of 0.0006 N/sq m (0.000004 torr). The results of the experimental program show a significant reduction in microbial reproductive integrity.

Barengoltz, J. B.↗