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Results for “Integrated photonics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Synchronous micromechanically resonant programmable photonic circuits

Abstract Programmable photonic integrated circuits (PICs) are emerging as powerful tools for control of light, with applications in quantum information processing, optical range finding, and artificial intelligence. Low-power implementations of these PICs involve micromechanical structures driven capacitively or piezoelectrically but are often limited in modulation bandwidth by mechanical resonances and high operating voltages. Here we introduce a synchronous, micromechanically resonant design architecture for programmable PICs and a proof-of-principle 1×8 photonic switch using piezoelectric optical phase shifters. Our design purposefully exploits high-frequency mechanical resonances and optically broadband components for larger modulation responses on the order of the mechanical quality factor Q m while maintaining fast switching speeds. We experimentally show switching cycles of all 8 channels spaced by approximately 11 ns and operating at 4.6 dB average modulation enhancement. Future advances in micromechanical devices with high Q m , which can exceed 10000, should enable an improved series of low-voltage and high-speed programmable PICs.

42 ENGINEERING↗
DOE OSTI2024

Ion trap with in-vacuum high numerical aperture imaging for a dual-species modular quantum computer

Photonic interconnects between quantum systems will play a central role in both scalable quantum computing and quantum networking. Entanglement of remote qubits via photons has been demonstrated in many platforms; however, improving the rate of entanglement generation will be instrumental for integrating photonic links into modular quantum computers. We present an ion trap system that has the highest reported free-space photon collection efficiency for quantum networking. We use a pair of in-vacuum aspheric lenses, each with a numerical aperture of 0.8, to couple 10(1)% of the 493 nm photons emitted from a 138Ba+ ion into single-mode fibers. We also demonstrate that proximal effects of the lenses on the ion position and motion can be mitigated.

Instruments & Instrumentation↗
DOE OSTI2024

Search for photons above 10 18 eV by simultaneously measuring the atmospheric depth and the muon content of air showers at the Pierre Auger Observatory

The Pierre Auger Observatory is the most sensitive instrument to detect photons with energies above 1 0 17 eV . It measures extensive air showers generated by ultrahigh energy cosmic rays using a hybrid technique that exploits the combination of a fluorescence detector with a ground array of particle detectors. The signatures of a photon-induced air shower are a larger atmospheric depth of the shower maximum ( X max ) and a steeper lateral distribution function, along with a lower number of muons with respect to the bulk of hadron-induced cascades. In this work, a new analysis technique in the energy interval between 1 and 30 EeV ( 1 EeV = 1 0 18 eV ) has been developed by combining the fluorescence detector-based measurement of X max with the specific features of the surface detector signal through a parameter related to the air shower muon content, derived from the universality of the air shower development. No evidence of a statistically significant signal due to photon primaries was found using data collected in about 12 years of operation. Thus, upper bounds to the integral photon flux have been set using a detailed calculation of the detector exposure, in combination with a data-driven background estimation. The derived 95% confidence level upper limits are 0.0403, 0.01113, 0.0035, 0.0023, and 0.0021 km − 2 sr − 1 yr − 1 above 1, 2, 3, 5, and 10 EeV, respectively, leading to the most stringent upper limits on the photon flux in the EeV range. Compared with past results, the upper limits were improved by about 40% for the lowest energy threshold and by a factor 3 above 3 EeV, where no candidates were found and the expected background is negligible. The presented limits can be used to probe the assumptions on chemical composition of ultrahigh energy cosmic rays and allow for the constraint of the mass and lifetime phase space of super-heavy dark matter particles. Published by the American Physical Society 2024

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2022

Integrated freeform optical couplers

Reflecting light beams off of microscale three-dimensional (3D) freeform surfaces can yield highly efficient coupling into and out of optical waveguides, optical fibers, and photonic chips. The structure of the 3D freeform reflective surface determines the shape of the reflected beam. This allows freeform reflectors to control the mode profile, rotation angle, and divergence angle of light beams. Control of beam shape enables mode matching between source output mode and target input mode, which results in low-loss optical coupling. An inventive freeform reflective surface can direct light beams in plane or out of plane via specular reflection or total internal reflection. A photonic integrated circuit with this type of freeform optical coupler can operate with a bandwidth range of at least 400 nm, potentially encompassing all visible or telecommunications wavelengths, and can be volume manufactured in photonic chips.

Yu, Shaoliang↗
DOE OSTI2020

Integrated dispersion compensated mode-locked quantum dot laser

Quantum dot lasers are excellent on-chip light sources, offering high defect tolerance, low threshold, low temperature variation, and high feedback insensitivity. Yet a monolithic integration technique combining epitaxial quantum dot lasers with passive waveguides has not been demonstrated and is needed for complex photonic integrated circuits. We present here, for the first time to our knowledge, a monolithc offset quantum dot integration platform that permits formation of a laser cavity utilizing both the robust quantum dot active region and the versatility of passive GaAs waveguide structures. This platform is substrate agnostic and therefore compatible with the quantum dot lasers directly grown on Si. As an illustration of the potential of this platform, we designed and fabricated a 20 GHz mode-locked laser with a dispersion-engineered on-chip waveguide mirror. Due to the dispersion compensation effect of the waveguide mirror, the pulse width of the mode-locked laser is reduced by a factor of 2.8.

Zhang, Zeyu (ORCID:0000000271576272)↗
DOE OSTI2020

Characterization of an architecture for front-end pixel binning in an integrating pixel array detector

Optimization of an area detector involves compromises between various parameters like frame rate, read noise, dynamic range and pixel size. We have implemented and tested a novel front-end binning design in a photon-integrating hybrid pixel array detector using the MM-PAD- 2.0 pixel architecture. In this architecture, the pixels can be optionally binned in a 2 x 2 pixel configuration using a network of switches to selectively direct the output of 4 sensor pixels to a single amplifier input. Doing this allows a trade-off between frame rate and spatial resolution. Tests show that the binned pixels perform well, but with some degradation on performance as compared to an un-binned pixel. The increased parasitic input capacitance does reduce the signal collected per x-ray as well as increases the noise of the pixel. Here, the increase in noise is, however, less than the factor of 2 increase one would observe for binning in post-processing. Spatial scans across the binned pixels show that no measured signal intensity is lost at the inner binning unit boundaries. In the high flux regime, at a 2 x 2 pixel wide beam spot (FWHM) size, binned mode responds linearly up to a photon flux of 10 7 x-rays/s, and performs comparably with un-binned mode up to a photon flux of 10 8 x-rays/s. While this study demonstrates a proof of concept for front-end binning in integrating detectors, we also identify changes to this early-stage prototype which can further improve the performance of binning pixel structures.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Control of light-matter interactions in hybrid structured environments with novel nanomaterials of different dimensionalities

The project calls for exploration of individual nanomaterials and the ability to fabricate functional structures without degrading the properties of components. The rich photophysics of novel semiconductors like transition metal dichalcogenides (TMDs), lead halide perovskites (LHPs) and nanocrystal quantum dots (NQDs) can be gainfully exploited in integrated photonic structures alongside conventional semiconducting and dielectric materials. Realization of the prospects of such hybrid structures crucially depends on the ability to fabricate these “designer” assemblies while preserving and enhancing the optoelectronic properties of individual components. We study emission properties of these materials at both bulk and single particles levels to elucidate their intrinsic photophysical properties in order to minimize energy losses and facilitate their judicious integration via control of energy/charge flows and photon-exciton interconversions.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Classifying topology in photonic crystal slabs with radiative environments

Abstract In the recent years, photonic Chern materials have attracted substantial interest as they feature topological edge states that are robust against disorder, promising to realize defect-agnostic integrated photonic crystal slab devices. However, the out-of-plane radiative losses in those photonic Chern slabs has been previously neglected, yielding limited accuracy for predictions of these systems’ topological protection. Here, we develop a general framework for measuring the topological protection in photonic systems, such as in photonic crystal slabs, while accounting for in-plane and out-of-plane radiative losses. Our approach relies on the spectral localizer that combines the position and Hamiltonian matrices of the system to draw a real-picture of the system’s topology. This operator-based approach to topology allows us to use an effective Hamiltonian directly derived from the full-wave Maxwell equations after discretization via finite-elements method (FEM), resulting in the full account of all the system’s physical processes. As the spectral FEM-localizer is constructed solely from FEM discretization of the system’s master equation, the proposed framework is applicable to any physical system and is compatible with commonly used FEM software. Moving forward, we anticipate the generality of the method to aid in the topological classification of a broad range of complex physical systems.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

A Search for Photons with Energies Above 2 × 10 17 eV Using Hybrid Data from the Low-Energy Extensions of the Pierre Auger Observatory

Ultra-high-energy photons with energies exceeding 10 17 eV offer a wealth of connections to different aspects of cosmic-ray astrophysics as well as to gamma-ray and neutrino astronomy. The recent observations of photons with energies in the 10 15 eV range further motivate searches for even higher-energy photons. In this paper, we present a search for photons with energies exceeding 2 × 10 17 eV using about 5.5 yr of hybrid data from the low-energy extensions of the Pierre Auger Observatory. The upper limits on the integral photon flux derived here are the most stringent ones to date in the energy region between 10 17 and 10 18 eV.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2024

Scalable free-space photonic antennas in foundry SOI silicon photonic platforms

We present a flexible, scalable, and low-noise design scheme for coupling free-space light into a silicon-on-insulator (SOI) electronic-photonic integrated circuit. The proposed scheme utilizes arrays of grating couplers with compact, inverse-designed power combining networks to couple a distributed optical collection area to a single output waveguide, forming a photonic antenna. Fabrication density compliance is maintained regardless of the antenna size, and the collection area can be scaled while maintaining a fixed noise floor. Using experimental grating array antennas fabricated in the GF45CLO platform, we demonstrate up to a 6.7× increase in the signal-to-noise ratio (SNR) of a lens-less monolithic free-space photonic receiver using a 4×4 grating array.

Rollinson, John (ORCID:0000000157130832)↗
DOE OSTI2021

Self-Isolated Raman Lasing with a Chiral Dielectric Metasurface

The light sources that power photonic networks are small and scalable, but they also require the incorporation of optical isolators that allow light to pass in one direction only, protecting the light source from damaging backreflections. Unfortunately, the size and complex integration of optical isolators makes small-scale and densely integrated photonic networks infeasible. Here, we overcome this limitation by designing a single device that operates both as a coherent light source and as its own optical isolator. Our design relies on high-quality-factor dielectric metasurfaces that exhibit intrinsic chirality. By carefully manipulating the geometry of the constituent silicon metaatoms, we design three-dimensionally chiral modes that act as optical spin-dependent filters. Using spin-polarized Raman scattering together with our chiral metacavity, we demonstrate Raman lasing in the forward direction, while the lasing action is suppressed by over an order of magnitude for reflected light. Our high-$\textit{Q}$ chiral metasurface design presents a new approach toward compactly isolating integrated light sources by directly tailoring the emission properties of the light source itself.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Er : Li Nb O 3 with High Optical Coherence Enabling Optical Thickness Control

Integrated photonics capable of incorporating rare-earth ions with high optical coherence is desirable for realizing efficient quantum transducers, compact quantum memories, and hybrid quantum systems. Here we describe a photonic platform based on the SmartCut erbium-doped lithium niobate thin film, and explore its stable optical transitions at telecom wavelength in a dilution refrigerator. Optical coherence time of up to 180μs, rivaling the value of bulk crystals, is achieved in optical ridge waveguides and ring resonators. With this integrated platform, we demonstrate tunable light-ion interaction and flexible control of optical thickness by exploiting long waveguides, whose lengths are in principle variable. This unique ability to obtain high optical density using low-concentration ions further leads to the observation of multiecho pulse trains in centimeter-long waveguides. Our results establish a promising photonic platform for quantum information processing with rare-earth ions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Monolithically Integrated $\varepsilon$-Ge/In x Ga 1-x As Quantum Well Laser Design: Experimental and Theoretical Investigation

Here, we have analyzed the electrical and optical phenomenon occurring in a $\varepsilon$-Ge/In x Ga 1-x -Ge/In x Ga 1-x As quantum well (QW) laser through self-consistent physical solvers calibrated using in-house experimental results. A separate confinement heterostructure QW design is proposed to enable lasing from tensile strained germanium ($\varepsilon$-Ge/In x Ga 1-x -Ge) in the range of 1.55 um to 4 um wavelengths as a function of QW thickness and indium (In) composition. Different recombination mechanisms were analyzed as a function of tensile strain in $\varepsilon$-Ge/In x Ga 1-x -Ge QW. Minority carrier lifetime and band alignment are key attributes of a QW laser, which were measured using microwave photoconductive decay and x-ray photoelectron spectroscopy (as a function of In composition), respectively. The transition point of Ge to a direct bandgap material is re-affirmed to be at $\varepsilon$-Ge/In x Ga 1-x = 1.6% (In ~24%) and the transition from type I to type II for $\varepsilon$-Ge/In x Ga 1-x -Ge/In x Ga 1-x As QW is found to be at In ~55%. Also, the transition to a TM mode dominant laser is identified at In ~15%. Using a tunable waveguide design to optimize confinement as a function of In composition, strain, wavelength, QW thickness, refractive index, and geometry, the $\varepsilon$-Ge/In x Ga 1-x -Ge QW laser design provided a net material gain of ~2000 cm -1 and a threshold current density of ~5 kA/cm 2 , which is an improvement over existing Ge based lasers. In conclusion, the impact of In composition and QW thickness on the band structure, polarized gain spectra, and various lasing metrics were analyzed to show $\varepsilon$-Ge/In x Ga 1-x -Ge/InGaAs QW lasers as promising for integrated photonics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Nonreciprocal Dissipation Engineering via Strong Coupling with a Continuum of Modes

Optical nonreciprocity plays a key role in almost every optical system, directing light flow and protecting optical components from backscattered light. Controllable forms of on-chip nonreciprocity are needed for the robust operation of increasingly sophisticated photonic integrated circuits (PICs) in the context of classical and quantum computation, networking, communications, and sensing. However, it has been challenging to achieve wideband, low-loss optical nonreciprocity on-chip. In this paper, we demonstrate strong coupling and Rabi-like energy exchange between photonic bands, possessing a continuum of modes, to unlock nonreciprocity and frequency translation over wide optical bandwidths in silicon. Using a traveling-wave phonon field to drive indirect interband photonic transitions, we demonstrate band hybridization that enables an intriguing form of nonreciprocal dissipation engineering. Using the converted mode to create a nonreciprocal dissipation channel, we demonstrate a frequency-neutral, low-loss (less than 1 dB) isolator with high nonreciprocal contrast (more than 14 dB) and broad operating bandwidth (more than 59 GHz). Additionally, through the implementation of complete interband conversion, we demonstrate a high extinction (more than 55 dB) optical frequency translation operation with near-unity efficiency.

Zhou, Yishu↗
DOE OSTI2026

Sub-Doppler Cooling of a Trapped Ion in a Phase-Stable Polarization Gradient

Trapped ions provide a highly controlled platform for quantum sensors, clocks, simulators, and computers, all of which depend on cooling ions close to their motional ground state. Existing methods like Doppler, resolved sideband, and dark resonance cooling balance trade-offs between the final temperature and cooling rate. A traveling polarization gradient has been shown to cool multiple modes quickly and in parallel, but utilizing a stable polarization gradient can achieve lower ion energies, while also allowing tailorable light-matter interactions in the sub-wavelength regime. In this Letter, we demonstrate cooling of a trapped ion below the Doppler limit using a phase-stable polarization gradient created using trap-integrated photonic devices. At an axial frequency of 2⁢𝜋×1.45 MHz we achieve ⟨𝑛⟩=1.56±0.07 in 150 μ⁢s and cooling rates of ∼0.3 quanta/μ⁢s. Here, we examine ion dynamics under different polarization gradient phases, detunings, and intensities, showing reasonable agreement between experimental results and a multilevel model. Cooling is fast and power efficient, with lower average motional Fock state occupation when compared to simulated operation under the corresponding running wave configuration. Our results demonstrate a well-controlled test bed for studying the dynamics of multilevel atomic systems in a phase-stable polarization gradient.

Atom & ion cooling↗
DOE OSTI2025

On-chip frequency-bin quantum photonics

Abstract Frequency-bin encoding furnishes a compelling pathway for quantum information processing systems compatible with established lightwave infrastructures based on fiber-optic transmission and wavelength-division multiplexing. Yet although significant progress has been realized in proof-of-principle tabletop demonstrations, ranging from arbitrary single-qubit gates to controllable multiphoton interference, challenges in scaling frequency-bin processors to larger systems remain. In this Perspective, we highlight recent advances at the intersection of frequency-bin encoding and integrated photonics that are fundamentally transforming the outlook for scalable frequency-based quantum information. Focusing specifically on results on sources, state manipulation, and hyperentanglement, we envision a possible future in which on-chip frequency-bin circuits fulfill critical roles in quantum information processing, particularly in communications and networking.

electro-optic modulators↗
DOE OSTI2024

Linear-frequency conversion with time-varying metasurfaces

Frequency conversion is a hallmark of nonlinearity. The spectral manifestations, emergent within a system, can typically be attributed to a marked nonlinearity within the material properties, complex geometric configurations, and/or the unique functional form of interactions taking place in the constitutive subsystems. These phenomena, irrespective of their origins, have been harnessed and exploited in applications ranging from the generation of entangled photons, a cornerstone in quantum technologies, to nanomechanical frequency mixing, advancing subsurface scanning probe microscopy. Here, we propose a frequency conversion mechanism based on time-varying metasurfaces, an emerging frontier in metamaterial research. We show how temporal properties of metasurfaces can effectively emulate a nonlinear medium, thereby facilitating frequency conversion. The proposed material configuration has the potential not only to advance integrated photonics and quantum optics, but also to create opportunities in quantum sensing, quantum materials, and crucially quantum communications. Published by the American Physical Society 2024

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Wafer-scale waveguide sidewall roughness scattering loss characterization by image processing

Photonic integrated circuits (PICs) are vital for developing affordable, high-performance optoelectronic devices that can be manufactured at an industrial scale, driving innovation and efficiency in various applications. Optical loss of modes in thin film waveguides and devices is a critical measure of their performance. Thin film growth, lithography, masking, and etching processes are imperfect processes that introduce significant sidewall and top-surface roughness and cause dominating optical losses in waveguides and photonic structures. This roughness, as perturbations couple light from guided to far-field radiation modes, leads to scattering losses that can be estimated from theoretical models. Typically, with UV-based lithography, sidewall roughness is significantly larger than wafer-top surface roughness. Atomic force microscopy (AFM) imaging measurement gives a 3D and high-resolution roughness profile, but the measurement is inconvenient, costly, and unscalable for large-scale PICs and at wafer-scale. Here, we evaluate the sidewall roughness profile based on 2D high-resolution scanning electron microscope (SEM) imaging. We characterized the loss on two homemade nitride and oxide films on 3-inch silicon wafers with 12 waveguide devices on each and correlated the scattering loss estimated from a 2D image-based sidewall profile and theoretical Payne model. The lowest loss of guided fundamental transverse electric (TE 0 ) mode is found at 0.075 dB/cm at 633 nm across 24 devices, a record at visible wavelength. Our work shows 100% success (edge continuity span exceeding 95% of image width/height) in edge detection in image processing of all images to estimate autocorrelation function and optical mode loss. These demonstrations offer valuable insights into waveguide sidewall roughness and a comparison of experimental and 2D SEM image processing based loss estimations with applications in loss characterization at wafer-scale PICs.

Khurana, Mohit (ORCID:0000000207898672)↗