Strain localization and martensitic transformations at shear bands in a low SFE austenitic stainless steel.
Abstract not provided.
Medlin, Douglas L.↗
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Lithium thiostannate spinels: air-stable cubic semiconductors.
Lithium chalcogenide materials have been studied less than other alkali metal analogs and are of interest as ion conductors and semiconductors capable of thermal neutron detection. Herein, we describe the structural, thermal, magnetic, electronic, and ionic properties of a new family of cubic lithium thiospinels Li2MSn3S8 (M = Mg, Fe, Mn, Ni, Co) and Li1.66CuSn3.33S8. All compounds crystallize in the Fd (3) over barm space group and exhibit site occupancy disorder with Sn and M on the octahedral site for M = Mg, Fe, Mn, Ni, Co. The Li1.66CuSn3.33S8 compound also exhibits occupancy disorder on the tetrahedral sites between Li and Cu, as well as on the octahedral sites between Li and Sn. We demonstrate the ability to tune the physical properties of the compounds by changing their composition. By tuning the identity of the transition metal in the structure, the optical band gaps can vary between 0.91(2) and 2.19(2) eV, and electrical resistivities between 2.8 x 10(3) Omega-cm and 2.2 x 10(7)Omega-cm can be achieved. Density functional theory calculations for Li2MgSn3S8 and Li1.66CuSn3.33S8 suggest that both materials have indirect band gaps and significantly dispersive conduction bands. A bandwidth dispersion of 0.75 and 0.70 eV along the Gamma -> M direction in the conduction band are predicted for Li2MgSn3S8 and Li1.66CuSn3.33S8, respectively, with an electron effective mass of 0.49 and 0.55 m(e) at the Gamma point. The hole effective mass in the valence band is calculated to be 1.25 me at the M point and 0.75 me at the L point for Li2MgSn3S8 and Li1.66CuSn3.33S8, respectively. The ionic/electronic conductivity of each compound was determined using AC electrochemical impedance spectroscopy.
Quintero, Michael A.↗
Doping engineering: Next step toward room temperature performance of terahertz quantum cascade lasers
We hereby offer a comprehensive analysis of various factors that could potentially enable terahertz quantum cascade lasers (THz QCLs) to achieve room temperature performance. We thoroughly examine and integrate the latest findings from recent studies in the field. Our work goes beyond a mere analysis; it represents a nuanced and comprehensive exploration of the intricate factors influencing the performance of THz QCLs. Through a comprehensive and holistic approach, we propose novel insights that significantly contribute to advancing strategies for improving the temperature performance of THz QCLs. This all-encompassing perspective allows us not only to present a synthesis of existing knowledge but also to offer a fresh and nuanced strategy to improve the temperature performance of THz QCLs. We draw new conclusions from prior works, demonstrating that the key to enhancing THz QCL temperature performance involves not only optimizing interface quality but also strategically managing doping density, its spatial distribution, and profile. This is based on our results from different structures, such as two experimentally demonstrated devices: the spit-well resonant-phonon and the two-well injector direct-phonon schemes for THz QCLs, which allow efficient isolation of the laser levels from excited and continuum states. In these schemes, the doping profile has a setback that lessens the overlap of the doped region with the active laser states. Our work stands as a valuable resource for researchers seeking to gain a deeper understanding of the evolving landscape of THz technology. Furthermore, we present a novel strategy for future endeavors, providing an enhanced framework for continued exploration in this dynamic field. This strategy should pave the way to potentially reach higher temperatures than the latest records reached for T max of THz QCLs.
47 OTHER INSTRUMENTATION↗
Improved Representations of Longwave Surface Emissivity to Reduce Surface and Atmospheric Heating Biases in Earth System Models
Abstract Many Earth system models (ESMs) approximate surface emissivity as a broadband constant. This approximation reduces the computational burden, yet omits the spectral structure of emissivity and atmospheric absorption. Neglecting spectral variation in surface emission introduces biases in longwave (LW) atmospheric fluxes and heating. Biases are strongest over surfaces with strongly varying emissivity and minimal atmospheric opacity. We examine these biases over water, ice, and snow surfaces. We partition spectral emissivity into the 16 spectral bands utilized by a single‐column atmospheric radiative transfer model (RRTMG_LW) commonly used in ESMs. We quantify flux and heating biases introduced by broadband assumptions relative to the spectrally resolved case for standard atmospheric profiles over each surface type. Current assumptions tend to overestimate upwelling surface fluxes; for example, the greybody assumption overestimates flux by 1.6 W/m 2 (0.52%) at the bottom of a mid‐latitude winter atmosphere over ice, and by 2.33 (1.0%) at the top of atmosphere. The blackbody assumption tends to artificially cool Earth's surface, stabilizing the lower troposphere. Interestingly, the optimal broadband emissivity can deviate from the Planck‐weighted mean by up to 3% depending on surface type and atmospheric profile. We investigate bias sensitivity to surface temperature, cloud water path, and atmospheric water vapor. Bias is most sensitive to water vapor content, and least sensitive to cloud water path. Lastly, we show that a modified greybody method with updated broadband values can reduce total surface flux bias up to 1.69 , comparable to a five‐band approach and at a fraction of the computational cost.
Manzo, L. [Department of Earth System Science Univ↗
Photoinduced Dirac semimetal in ZrTe5
Abstract Novel phases of matter with unique properties that emerge from quantum and topological protection present an important thrust of modern research. Of particular interest is to engineer these phases on demand using ultrafast external stimuli, such as photoexcitation, which offers prospects of their integration into future devices compatible with optical communication and information technology. Here, we use MeV Ultrafast Electron Diffraction (UED) to show how a transient three-dimensional (3D) Dirac semimetal state can be induced by a femtosecond laser pulse in a topological insulator ZrTe 5 . We observe marked changes in Bragg diffraction, which are characteristic of bond distortions in the photoinduced state. Using the atomic positions refined from the UED, we perform density functional theory (DFT) analysis of the electronic band structure. Our results reveal that the equilibrium state of ZrTe 5 is a topological insulator with a small band gap of ~ 25 meV, consistent with angle-resolved photoemission (ARPES) experiments. However, the gap is closed in the presence of strong spin-orbit coupling (SOC) in the photoinduced transient state, where massless Dirac fermions emerge in the chiral band structure. The time scale of the relaxation dynamics to the transient Dirac semimetal state is remarkably long, τ ~ 160 ps, which is two orders of magnitude longer than the conventional phonon-driven structural relaxation. The long relaxation is consistent with the vanishing density of states in Dirac spectrum and slow spin-repolarization of the SOC-controlled band structure accompanying the emergence of Dirac fermions.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Lifetime measurements of 0 + states in Er 168 with the Doppler-shift attenuation method
Here, the lowest-lying shape oscillations of deformed nuclei have been described as quadrupole in nature (λ = 2), resulting in two types of vibrations or oscillations: β vibrations with oscillations along the symmetry axis (K π = 0 + ) and γ vibrations breaking axial symmetry with a projection of K π = 2 + on the symmetry axis. The γ vibration seems to be well characterized as the first K π = $2^+_1$ (or $2^+_γ$) band in deformed nuclei and exhibits a systematic behavior across the region. The nature of the K π = 0 + excitations, however, has remained poorly understood and has been open to debate for some decades. The goal of this work is to understand the nature of 0 + states observed in 168 Er through measurements of the lifetimes of these states and to determine if they are consistent with oscillations built on a deformed ground state, the minima of other coexisting shapes, single-particle states, or a mixture of effects. Lifetimes of excited states in the 168 Er nucleus were measured with the Doppler Shift Attenuation Method (DSAM) and the inelastic neutron scattering reaction, (n, n'γ), at the University of Kentucky Accelerator Laboratory. Numerous 0 + states had been observed by the (p, t) reaction. We confirm the 0 + states at 1217.2, 1421.5, 1833.6, 2364.9, 2392.1, and 2643.0 keV in 168 Er. We could not, however, support the previous assignments of 0 + levels at 2114.1, 2200.6, 2572.5, and 2617.4 keV. We report measured lifetimes for six confirmed 0 + excitations and additional members of 0 + bands. The results for 168 Er show that it is the third excited K π = 0 + ($0^+_4$) excitation that carries the collective strength and, therefore, the potential to be an oscillation on the ground state. This result is similar to the case in 166 Er, where it was also the $0^+_4$ state that exhibited greater collectivity than the first excited K π = 0 + band. The Delaroche et al. prediction for a collective K π = 0 + band is at E T =1.818 MeV which corresponds the third excited K π = 0 + band.
73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
Orbital Motion, Variability, and Masses in the T Tauri Triple System
We present results from adaptive optics imaging of the T Tauri triple system obtained at the Keck and Gemini Observatories in 2015−2019. We fit the orbital motion of T Tau Sb relative to Sa and model the astrometric motion of their center of mass relative to T Tau N. Using the distance measured by Gaia, we derived dynamical masses of M{sub Sa}=2.05±0.14 M {sub ⊙} and M {sub Sb} = 0.43 ± 0.06 M{sub ⊙}. The precision in the masses is expected to improve with continued observations that map the motion through a complete orbital period; this is particularly important as the system approaches periastron passage in 2023. Based on published properties and recent evolutionary tracks, we estimate a mass of ∼2 M {sub ⊙} for T Tau N, suggesting that T Tau N is similar in mass to T Tau Sa. Narrowband infrared photometry shows that T Tau N remained relatively constant between late 2017 and early 2019 with an average value of K = 5.54 ± 0.07 mag. Using T Tau N to calibrate relative flux measurements since 2015, we found that T Tau Sa varied dramatically between 7.0 and 8.8 mag in the K band over timescales of a few months, while T Tau Sb faded steadily from 8.5 to 11.1 mag in the K band. Over the 27 yr orbital period of the T Tau S binary, both components have shown 3–4 mag of variability in the K band, relative to T Tau N.
79 ASTRONOMY AND ASTROPHYSICS↗
Evaluation of PbTe and SnTe as Ohmic Contact Layers in CdTe Solar Cell Devices
For solar cells based on CdTe, the choice of a suitable back contact material is limited by CdTe's deep work function. Here, we explored p-type PbTe and SnTe as ohmic contacts to CdTe. These contact layers were grown on single crystal CdTe substrates by molecular beam epitaxy, and the valence band offset between film and substrate was measured using X-ray photoemission spectroscopy. Polycrystalline device structures were also grown by sublimation to assess performance improvements. Doping was achieved in PbTe by thallium incorporation. Only the highest Tl doped PbTe resulted in a desirable band alignment with the CdTe, forming an electron reflector and no hole barrier. Time-resolved photoluminescence measurements also revealed significant photocarrier lifetime improvements for only the highest doped PbTe. Consequentially, devices incorporating the highest doped PbTe layers showed increased power conversion efficiency, primarily from increased fill factor. Doping of the PbTe was measured via Hall effect with variable magnetic field, which was required due to the formation of an n-type parasitic interface layer. To properly interpret the variable field Hall measurements, we derived an expression for the magnetic field-dependent conductivity tensor of an L-valley semiconductor.
anisotropic band valley↗
Debris Disk Results from the Gemini Planet Imager Exoplanet Survey's Polarimetric Imaging Campaign
We report the results of a ∼4 yr direct imaging survey of 104 stars to resolve and characterize circumstellar debris disks in scattered light as part of the Gemini Planet Imager (GPI) Exoplanet Survey. We targeted nearby (≲150 pc), young (≲500 Myr) stars with high infrared (IR) excesses (L {sub IR}/L {sub ⋆} > 10{sup −5}), including 38 with previously resolved disks. Observations were made using the GPI high-contrast integral field spectrograph in H-band (1.6 μm) coronagraphic polarimetry mode to measure both polarized and total intensities. We resolved 26 debris disks and 3 protoplanetary/transitional disks. Seven debris disks were resolved in scattered light for the first time, including newly presented HD 117214 and HD 156623, and we quantified basic morphologies of five of them using radiative transfer models. All of our detected debris disks except HD 156623 have dust-poor inner holes, and their scattered-light radii are generally larger than corresponding radii measured from resolved thermal emission and those inferred from spectral energy distributions. To assess sensitivity, we report contrasts and consider causes of nondetections. Detections were strongly correlated with high IR excess and high inclination, although polarimetry outperformed total intensity angular differential imaging for detecting low-inclination disks (≲70°). Based on postsurvey statistics, we improved upon our presurvey target prioritization metric predicting polarimetric disk detectability. We also examined scattered-light disks in the contexts of gas, far-IR, and millimeter detections. Comparing H-band and ALMA fluxes for two disks revealed tentative evidence for differing grain properties. Finally, we found no preference for debris disks to be detected in scattered light if wide-separation substellar companions were present.
79 ASTRONOMY AND ASTROPHYSICS↗
Quasiparticle self-consistent GW band structures and phase transitions of LiAlO 2 in tetrahedrally and octahedrally coordinated structures
In this work, a first-principles computational study is presented of various phases of LiAlO 2 . The relative total energies and equations of state of the α, β, and γ phases are determined after structural relaxation of each phase. The β and γ tetrahedral phases are found to be very close in energy and lattice volume with the γ phase having the lowest energy. The octahedral α phase is a high-pressure phase and the transition pressure from the γ and β phases to α is determined to be about 1 GPa. The electronic band structures of each phase at their own equilibrium volume are determined using the quasiparticle self-consistent (QS) GW method as well as using the 0.8 Σ approach in which the QS GW self-energy is reduced by a factor of 0.8 to correct for the underscreening of W in QS GW. The effective masses of the band edges and the nature of the band gaps are presented. The lowest energy γ phase is found to have a pseudodirect gap of 7.69 eV. The gap is direct at Γ but corresponds to a dipole forbidden transition. The imaginary part of the dielectric function and the absorption coefficient are calculated in the long-wavelength limit and the random phase approximation, without local field or electron-hole interaction effects for each phase, and their anisotropies are discussed. Si doping on the Al site is investigated as a possible n-type dopant in γ-LiAlO 2 using a 128-atom supercell corresponding to 3.125% Si on the Al sublattice in the generalized gradient approximation and a smaller 16-atom cell with 25% Si in the QS GW approximation. The Si is found to significantly perturb the conduction band and lower the gap but a clearly separated deep donor defect level is not found. However, the donor binding energy is still expected to be relatively deep, on the order of a few tenths eV in the hydrogenic effective mass approximation.
36 MATERIALS SCIENCE↗
Constraining AGN Torus Sizes with Optical and Mid-infrared Ensemble Structure Functions
We propose a new method to constrain the size of the dusty torus in broad-line active galactic nuclei (AGNs) using optical and mid-infrared (MIR) ensemble structure functions (SFs). Because of the geometric dilution of the torus, the MIR response to optical continuum variations has suppressed variability with respect to the optical that depends on the geometry (e.g., size, orientation, opening angle) of the torus. More extended tori have steeper MIR SFs with respect to the optical SFs. We demonstrate the feasibility of this SF approach using simulated AGN light curves and a geometric torus model. While it is difficult to use SFs to constrain the orientation and opening angle due to the insensitivity of the SF on these parameters, the size of the torus can be well determined. Applying this method to the ensemble SFs measured for 587 SDSS quasars, we measure a torus R–L relation of $\mathrm{log}\,{R}_{\mathrm{eff}}(\mathrm{pc})={0.51}_{-0.04}^{+0.04}\times \mathrm{log}({{L}}_{\mathrm{bol}}/{10}^{46}\,\mathrm{erg}\ {{\rm{s}}}^{-1})-{0.38}_{-0.01}^{+0.01}$ in the WISE W1 band and sizes ~1.4 times larger in the W2 band, which are in good agreement with dust reverberation mapping measurements. Compared with the reverberation mapping technique, the SF method is much less demanding in data quality and can be applied to any optical+MIR light curves for which a lag measurement may not be possible, as long as the variability process and torus structure are stationary. While this SF method does not extract all information contained in the light curves (i.e., the transfer function), it provides an intuitive interpretation for the observed trends of AGN MIR SFs compared with optical SFs.
79 ASTRONOMY AND ASTROPHYSICS↗
Landau quantization in tilted Weyl semimetals with broken symmetry
Broken symmetry and tilting effects are ubiquitous in Weyl semimetals (WSMs). Therefore, it is crucial to understand their impacts on the materials’ electronic and optical properties. Here, using a realistic four-band model for WSMs, which incorporates both the symmetry breaking and tilting effects, we study its Landau quantization and the associated magneto-absorption spectrum. We show that the Landau bands in tilted WSMs can be obtained by considering a non-tilt Hamiltonian through Lorentz boost. Furthermore, broken symmetry effects can generate an additional term in the Hamiltonian, which equivalently lead to band reconstruction. Our work provides a more realistic view of the magnetic field response of WSMs that shall be taken into account in relevant future device applications.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Electronic structure of Humble defects in Ge and Ge 0.8 Si 0.2
The group-IV diamond-structure elements are known to host a variety of planar defects, including {001} planar defects in C and {001}, {111}, and {113} planar defects in Si and Ge. Among the {001} planar defects, the Humble defect, known for some time to occur in Ge, has recently also been observed in Si-Ge alloys, but the details of its electronic structure remain poorly understood. Here, in this work, we perform first-principles density-functional calculations to study Humble defects in both Ge and Ge 0.8 Si 0.2 . We also measure the Si L 2,3 -edge electron energy-loss spectra both at the defect and in a bulk-like region far from the defect and compare with theoretical calculations on corresponding Si sites in our first-principles calculations. We find that inclusion of core-hole effects in the theory is essential for reproducing the observed L 2,3 edge spectra, and that once they are included, the results provide a set of fingerprints for different types of local atomic bonding environments in Ge 0.8 Si 0.2 . Our first-principles calculations reveal that the Humble defects have a tendency to enlarge the electronic band gap, which may have potential uses in band engineering. The use of hybrid functionals for an improved description of the band gap in these systems is also discussed.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Two-Dimensional Violet Phosphorus P 11 : A Large Band Gap Phosphorus Allotrope
Not provided.
Chemistry↗
Optical constants of polycrystalline Al 0.25 Ga 0.75 P and Al 0.9 Ga 0.1 As determined by variable-angle spectroscopic ellipsometry
The optical constants of single-crystal Al x Ga 1-x P and Al x Ga 1-x As have been widely studied at various Al compositions but have not yet been thoroughly investigated as polycrystalline materials. Using variable-angle spectroscopic ellipsometry, we estimate and analyze the optical constants of polycrystalline Al 0.25 Ga 0.75 P and Al 0.9 Ga 0.1 As that were non-epitaxially deposited at deposition temperatures of either 250 or 420 °C, and with various dopant species, dopant concentrations, and V/III flux ratios. Here, for wavelengths of 350–400 nm, decreasing the V/III ratio increases the refractive index of Be-doped polycrystalline Al 0.25 Ga 0.75 P. For wavelengths >500 nm, as the targeted Be dopant concentration increases for polycrystalline Al 0.25 Ga 0.75 P, the amount the extinction coefficient increases and the indirect bandgap decreases depends on the V/III ratio. Furthermore, Si-doped polycrystalline Al 0.25 Ga 0.75 P has significantly smaller extinction coefficient values than when it is Be-doped, for the same V/III ratio and targeted doping concentration, at wavelengths >500 nm. Based on our findings, we hypothesize that the dopant species, dopant concentration, and the V/III ratio dictate various types of defect concentrations, which then affect the optical constants and indirect bandgap of polycrystalline Al 0.25 Ga 0.75 P. Additionally, for wavelengths >500 nm, we find that polycrystalline Al 0.25 Ga 0.75 P and Al 0.9 Ga 0.1 As have the lowest extinction coefficient values when deposited at 420 °C, as opposed to 250 °C. Thus, we hypothesize that the deposition temperature is the most significant factor in dictating the optical constants of these polycrystalline III-Vs. Ultimately, this work demonstrates alternative methods to tune the optical constants of polycrystalline Al 0.25 Ga 0.75 P and Al 0.9 Ga 0.1 As, as opposed to tuning the Al composition.
42 ENGINEERING↗
Two-well injector direct-phonon terahertz quantum cascade lasers
We present an experimental study on a terahertz quantum cascade laser (THz QCL) design that combines both two-well injector and direct-phonon scattering schemes, i.e., a so-called two-well injector direct-phonon design. As a result of the two-well injector direct-phonon scheme presented here, the lasers benefit from both a direct phonon scattering scheme for the lower laser level depopulation and a setback for the doping profile that reduces the overlap of the doped region with active laser states. Additionally, our design also has efficient isolation of the active laser levels from excited and continuum states as indicated by negative differential resistance behavior all the way up to room temperature. This scheme serves as a good platform for improving the temperature performance of THz QCLs as indicated by the encouraging temperature performance results of the device with a relatively high doping level of 7.56 × 10 10 cm −2 and T max ∼ 167 K. With the right optimization of the molecular beam epitaxy growth and interface quality, the injection coupling strength, and the doping density and its profile, the device could potentially reach higher temperatures than the latest records reached for the maximum operating temperature (T max ) of THz QCLs.
47 OTHER INSTRUMENTATION↗
Measurement of Conduction and Valence Bands g -Factors in a Transition Metal Dichalcogenide Monolayer
The electron valley and spin degree of freedom in monolayer transition-metal dichalcogenides can be manipulated in optical and transport measurements performed in magnetic fields. The key parameter for determining the Zeeman splitting, namely, the separate contribution of the electron and hole g factor, is inaccessible in most measurements. Here we present an original method that gives access to the respective contribution of the conduction and valence band to the measured Zeeman splitting. It exploits the optical selection rules of exciton complexes, in particular the ones involving intervalley phonons, avoiding strong renormalization effects that compromise single particle g -factor determination in transport experiments. These studies yield a direct determination of single band g factors. We measure g c1 = 0.86 ± 0.1, g c2 = 3.84 ± 0.1 for the bottom (top) conduction bands and g v = 6.1 ± 0.1 for the valence band of monolayer WSe 2 . These measurements are helpful for quantitative interpretation of optical and transport measurements performed in magnetic fields. In addition, the measured g factors are valuable input parameters for optimizing band structure calculations of these 2D materials.
36 MATERIALS SCIENCE↗
The Critical Role of AlInP Window Design in III–V Rear-Emitter Solar Cells
This article highlights the critical role of window design on short circuit carrier collection in rear-emitter solar cells, as demonstrated through modeling and experiment using metamorphic GaAs y P 1-y . Ultimately, if the window design is not carefully considered, surface depletion caused by Fermi level pinning at the window/air interface can extend into regions of active collection resulting in a large increase in effective window/base interface recombination velocity. This was experimentally shown here to result in a potential AM1.5G photocurrent loss of 8.1 mA/cm 2 , or nearly 50%, based on integrated internal quantum efficiency (IQE). Associated IQE modeling and curve fitting indicate that the effective IRV at the GaAs 0.75 P 0.25 /Al 0.64 In 0.36 P interface is increased by multiple orders of magnitude when the window is not sufficiently thick or doped to fully contain the surface depletion to within the window layer. Calculations of the surface depletion depth as a function of doping and the surface Fermi pinning energy level provides insight into the fundamental limits of window thickness. As a result, this allows the estimation of the Al 0.64 In 0.36 P surface pinning level to be at least 1.25 eV below the conduction band edge, or in the bottom half of the bandgap.
14 SOLAR ENERGY↗