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This viewgraph presentation reviews the challenges for the pulsed laser in the following categories: 1. Metal 2. Package 3. Scaling 4. Exotic materials 5. Novel devices 6. Equipment
This presentation gives an overview pulsed laser testing methods and practical examples for radiation hardness assurance in space system electronics.
Temporally shaped laser pulses are desirable in various applications including emittance reduction and beam-driven acceleration. Pulse shaping techniques enable flexible controls over the longitudinal distribution of electron bunches emitted from the photocathode. While direct manipulation and measurement of an ultrashort pulse can be challenging in the time domain, both actions can be performed in the frequency domain. In this paper, we report the study and development of laser shaper and diagnostics at Argonne Wakefield Accelerator (AWA). Simulations of the shaping process for several sought-after shapes are presented along with the temporal diagnosis. Status of the experiment at the AWA facility is also discussed.
Pulsed-laser deposition (PLD) is a powerful technique for growing complex oxides with controlled stoichiometry. To understand growth dynamics therein, it is common to leverage in situ spectroscopies, such as reflection high-energy electron diffraction (RHEED), to monitor surface crystallinity. Most commercial systems rely on video-rate cameras operating at 60-120 Hz that lack sufficient temporal resolution to capture growth dynamics at practical deposition frequencies. Here, a high-speed platform to record in situ dynamics via RHEED at >500 Hz is implemented. An open-source analysis package is designed to fit diffraction spots to 2D Gaussians, allowing single-pulse surface reconstruction kinetics extraction. Using homoepitaxially deposited (001)-oriented SrTiO 3 as a model system, we demonstrate how high-speed RHEED can provide real-time insight into growth processes obscured by slower acquisition systems. By fitting the single-pulse intensity to a set of exponential functions, we observe changes in the characteristic decay time and mechanism correlated to the substrate step width and surface termination. We observe distinct surface effects, with diffraction intensity decaying on lower-energy TiO 2 -terminated surfaces and stabilizing on SrO- or mixed-terminated surfaces. Similarly, using an exponential model, the extracted characteristic time of adatom deposition decreases with increased density of bonding sites associated with mixed termination and narrower step widths. Ultimately, this work shows how increasing RHEED temporal resolution can uncover new insights into growth processes, with practical implications for the design and control of PLD processes. This experimental platform provides new capabilities to enable data-driven machine learning analysis and autonomous control systems to enhance the complexity and fecundity of PLD.
Solar cells may be used as receivers for laser power beaming. To understand the behavior of solar cells when illuminated by a pulsed laser, the time response of gallium arsenide and silicon solar cells to pulsed monochromatic input has been modeled using a finite element solar cell model.
Electron and ion emission from pulsed ruby laser illuminated metallic surface into vacuum, determining application to pulsed ion thrustor
The composition of pulsed-laser-deposited Y-Ba-Cu-O and Ba-K-Bi-O thin films is shown to be strongly affected by target conditioning, gas pressure, and target-substrate distance.
High-efficiency single crystalline silicon (c-Si) solar cells require precise control of dopant diffusion profiles and highly active doping concentrations through thermal annealing. Conventional furnace annealing has been successfully employed for dopant diffusion in aluminum back-surface field (Al-BSF), passivated emitter and rear contact (PERC), and Topcon cells. However, furnace annealing limits some next-generation polycrystalline silicon (poly-Si) on SiOx passivating contacts. This limitation largely affects p-type passivating contacts by not being able to: 1) control the dopant diffusion accurately to prevent B segregation at the SiOx and c-Si interface; and 2) provide highly activated doping concentrations for low contact resistivity. In this contribution, we use a nanosecond excimer laser to examine the passivation quality and electrical performance of both B- and Ga-doped poly-Si/SiOx passivating contacts. The core of this method is to take advantage of the nonequilibrium nature of the anneal through rapid melting and recrystallizing the poly-Si in a short timescale and to achieve doping concentrations above the solid solubility limit. Simulations were performed on polished surfaces to visualize the doping diffusion profiles under different laser conditions, and secondary ion mass spectrometry (SIMS) was used to verify the experimental diffusion profiles post pulsed laser melting (PLM). The results show the dopant diffusion profiles can be tuned precisely through PLM. The electrical analysis using VdP-Hall measurements reveals that the active doping concentration reached 10^21 cm-3 for B and ~2×10^21 cm-3 for Ga in poly-Si, far exceeding their solid solubility limit in Si, with a nearly 100% dopant activation achieved for B, and 20% for Ga. This highly activated dopant profile results in a low contact resistivity of <15 mO·cm^2 for B-doped contacts and <40 mO·cm^2 for Ga-doped contacts. We demonstrate that the passivation quality of the laser annealed contacts shows a linear dependency with the laser energy density and the number of pulses. PLM was also performed on random pyramid textured samples, and we found that preferential melting exists for the tips of pyramids, which can be pursued further for selective pinhole opening. Additionally, we perform thermal stability tests of these hyperdoped passivating contacts and show that under certain laser conditions, the B-doped samples exhibit good thermal stability with near full activation for temperatures up to 800°C. Lastly, we transfer this technique to a larger area by overlapping laser spots and show uniform passivation quality and electrical performance. We are currently implementing this PLM annealed p-type passivating contacts into double-side back-junction poly-Si/SiOx passivating contact devices. Our results show that PLM can not only enable the next generation of high-efficiency c-Si photovoltaics technology but can also benefit the c-Si integrated circuit industry through hyperdoping other semiconductors with atoms that may otherwise have a low solubility.
The scattering of an ultrashort laser pulse by an air bubble in water is investigated by means of the Lorenz-Mie theory and the Debye expansion. A 70 fs, 800 nm pulse is considered as a plane wave with a Gaussian temporal envelope. The transient response is treated with the theory derived from Gouesbet and Gréhan [ Part. Part. Syst. Charact. 17 , 213 –224 ( 2000 ) ], taking now into account chromatic dispersion and absorption of water. It is observed that contrary to the case of water droplet in air, the Debye modes p ≥ 1 start their transient scattering at the same time and the same angle (≈90 ° ) and for a large size parameter, they differentiate as time elapses. A parametric study on the size parameter and the spatial extension of the pulse is performed to identify regimes where the different Debye mode are distinguishable in time. Dependence on the scattering angle is also treated. Finally, by considering pulse chirp, it is shown that the laser/bubble distance has an influence on the separability of modes p = 0 and p = 1.
Methods are presented for locating threshold points by using laser pulse analysis. It was found that there are errors involved in the determination of each of these quantities, and an attempt was made to separate their effects on the overall range correction. Several series of corrected range measurements for fixed reflectors and satellites were obtained. Residuals were computed by fitting the range measurements to either fixed-reflector distances or short arcs of satellite orbits. Root mean square values of these residuals are presented.
A pulsed laser photolysis technique was used to investigate the kinetics of the important stratospheric reaction O + ClO yields Cl + O2 in buffer gas over the temperature and pressure ranges of 231-367 K and 25-500 torr. The results indicate a lack of pressure dependence at 298 K over the 25-500 torr range.
A new and fast data processing technique for pulsed-laser-velocimetry data is described. A simplified cross correlation algorithm was developed which uses the time history information of the recorded particle images. It is shown that, the use of the particle time history information (which can be obtained using an electronic camera to record the particle exposures) facilitates high speed processing and unambiguous velocity vector information. It was found that a complex convection vortex flow can be recorded and completely processed in less than 2 min on a personal computer, producing a two-dimensional map of the flow field containing over 300 velocity vectors.
In this work, the authors report the use of pulsed laser deposition to fabricate nickel oxide layers on silicon and assess the applicability of this structure as a hole selective contact. Films were deposited at temperatures of 300, 500, 700, and 900 °C. Results from reflective high energy electron diffraction patterns indicate increasing crystallinity with temperature up to 500 °C. However, layers deposited at 900 °C are amorphous. Nevertheless, results from atomic force microscopy, contact resistance measurements, and photoluminescence lifetime imaging indicate that films deposited at 900 °C have the best film smoothness, lowest specific contact resistivity, and highest lifetimes, and therefore, they are best suited for hole selective contact applications. Kelvin probe force microscopy and x-ray photoelectron spectroscopy were also carried out to study the effects of deposition temperature.
The accuracy of estimating the duration of single-cycle laser pulses with centre wavelengths of 910 and 780 nm is analysed using a single-shot second-order intensity autocorrelator. It is shown that estimates of the single-cycle pulse duration with an error of less than 5 % require the use of KDP crystals with a thickness of no more than 10 μm for the second harmonic generation. At the same time, to estimate the duration of a transform-limited pulse containing ten optical cycles, the crystal thickness can be up to 1 mm. In this case, at an optimum angle of convergence of the first-harmonic beams, the duration estimation error is less than 2 %. (paper)
Motivated by experiments employing picosecond-long, kilojoule laser pulses, we examined x-ray emission in a finite-length underdense plasma irradiated by such a pulse using two-dimensional particle-in-cell simulations. We found that, in addition to the expected forward emission, the plasma also efficiently emits in the backward direction. Our simulations reveal that the backward emission occurs when the laser exits the plasma. The longitudinal plasma electric field generated by the laser at the density down-ramp turns around some of the laser-accelerated electrons and re-accelerates them in the backward direction. As the electrons collide with the laser, they emit hard x rays. The energy conversion efficiency is comparable to that for the forward emission, but the effective source size is smaller. We show that the picosecond laser duration is required for achieving a spatial overlap between the laser and the backward energetic electrons. At peak laser intensity of 1.4×1020 W/cm2, backward-emitted photons (energies above 100 keV and 10° divergence angle) account for 2×10−5 of the incident laser energy. This conversion efficiency is three times higher than that for similarly selected forward-emitted photons. The source size of the backward photons (5 μm) is three times smaller than the source size of the forward photons.
A system capable of measuring and statistically analyzing wavelength and intensity fluctuations in pulsed laser diode output beams has been developed. The snapshot wavelength-intensity performance of laser diodes emitting discrete short-duration optical pulse is determined by isolating and recording individual pulses. Statistical processing of the resultant data generates information about the magnitude and/or frequency of occurrence of power variations or wavelength fluctuations in narrow optical bands. The system configuration along with plots depicting results based on measurements taken for various laser diodes are presented.
The integration of monolayer (ML) two-dimensional (2D) materials into next-generation microelectronics, optoelectronics, and sensors is hindered by their sensitivity to environmental exposure. Deposition of additional layers for encapsulation or growth on ML 2D materials by versatile but energetic plasma techniques such as pulsed laser deposition (PLD) has not been considered at the monolayer level because of potential damage caused by hyperthermal species with kinetic energies (KEs) exceeding the threshold displacement energy (TDE) of the ML. Here, we describe a general strategy to understand and mitigate damage during PLD by reducing the incident KE of ablated species below the TDE of the 2D monolayer using background gas collisions. Ion flux diagnostics, combined with in situ Raman spectroscopy of monolayer graphene during PLD of amorphous boron nitride (a-BN) as a dielectric encapsulation layer, show that damage is primarily correlated with fast ions that penetrate the background gas in accordance with Beer’s Law and are often overlooked in ICCD imaging due to the dominance of the bright, delayed plasma luminescence. Significantly, if fast ions are eliminated and a ∼2 nm-thick a-BN layer is “soft landed”, the monolayer graphene is effectively protected from damage by high KE species in the boron nitride plasma plume. Deposited a-BN films display a characteristic dielectric constant of 3.6 at 100 kHz and tunable charge injection properties. Our results enable PLD as a viable option for encapsulation and thin film growth onto ML 2D materials, with implications for both fundamental research and device integration.
In this contribution, we examine Ga hyper-doped poly-Si/SiOx contacts realized by pulsed laser melting (PLM). Here, we use Ga as a novel p-type dopant and B as a conventional dopant to induce non-equilibrium doping using an excimer laser. We perform simulations to visualize the maximum melt depth profiles within the poly-Si, with a goal of distributing dopants close to the tunneling oxide, but at the same time preserving the passivation. Hall measurements show that sheet resistance for B is lower than Ga due to its higher solid solubility limit in Si. After comparing the Hall active dopant concentration with the chemical concentration obtained by SIMS measurement, we show nearly 100% activation B activation reaching 10^21 cm-3, while only ~20% activation for Ga. Nevertheless, we achieve active doping concentrations of Ga in poly-Si six times higher than its solid solubility limit in Si (~10^19 cm-3). We compare our Hall mobilities with values in the literature for c-Si and show that B mobilities in laser-treated poly-Si are close to that of the literature value for B, while Ga mobilities are lower, possibly due to additional scattering channels within grain boundaries and deformed lattice. We also compare our results on PLM samples with conventional furnace annealed samples, and we show much higher percent activation and mobilities. Previously, we showed a low contact resistivity of 35.5 +/- 2.4 m..omega..cm2. Here, we further confirm this result by scanning spreading resistance microscopy and Kelvin force nanoprobe microscopy. We demonstrate that our poly-Si: Ga/nCz contact exhibits large drift and diffusion currents under normal cell operating voltage, which widens the laser processing window for a good metal/poly-Si/c-Si contact.