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A unique IF measurement procedure for evaluating mixer performance and identifying optimum circuit boundary conditions is presented. The technique is applied to a scalable mm-wave single-sideband (image-sum enhanced) mixer design which provides 3.5 to 5 dB typical conversion loss from conventional, packaged devices.
The feasibility of designing a digital, complex, baseband mixer with a 50 MHz sampling rate is explored. The baseband filter must provide passbands with linear phase response to minimize intersymbol interference. The effects of signal quantization, filter coefficient quantization, dynamic range, filter response characteristics, and the performance of the mixer when used for cross correlation and autocorrelation pulse detection techniques are discussed. This filter was designed for use in the high speed data acquisition system (HSDAS), an advanced experimental system in the Deep Space Network.
A prototype 700 GHz subharmonically pumped superconductor-insulator-superconductor (SIS) mixer integrated with a tapered slot antenna on a silicon substrate is described. Imaging using integrated SIS-mixer-antenna chips is discussed.
A waveguide Schottky barrier diode mixer, which in preliminary tests has yielded a single sideband receiver noise temperature of 4300 K at 692 GHz, when cooled to 77 K is presented. Further refinements and operation at 20 K should produce a significant improvement in performance. From a system point of view, the very high efficiency of the radiation pattern produced by the conical feedhorn with cylindrical corrector mirror enhances the effective sensitivity by a factor of 1.5 to 2 compared to open-structure corner-reflector systems. A second-harmonic mixer for 557 GHz, also in the fundamental mode rectangular waveguide was developed. When combined with a frequency-tripled Gunn oscillator, this makes an extremely compact and lightweight submillimeter radiometer.
An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated and tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.
A Josephson effect heterodyne mixer for the millimeter wave band was investigated employing high-T(c) GdBaCuO point contacts. Mixer performance was in qualitative agreement with theory. A mixing response was observed up to 55 K, the highest operating temperature achieved for such a device to date. The voltage separation of RF-induced steps gave a value of h/2e = 2.08 x 10 to the -15th V s, which is in excellent agreement with the value expected for Cooper pairs. In addition, the temperature dependence of the I(0)R product was found to agree with Bardeen-Cooper-Schrieffer theory in the weak coupling limit.
An aero/acoustic model test of a mixer-ejector nozzle was conducted at the 9 x 15 foot low-speed acoustic wind tunnel at NASA Lewis Research Center. The objective of the test was to get a preliminary assessment of ejector pumping and noise reduction potential of this device for possible application in the exhaust system of an advanced supersonic civil transport. The results of the test showed that goal levels of pumping were achieved. Exit pressure/temperature traverse data showed that there was good mixing between the primary and secondary streams. Acoustics data were dominated by shock noise; jet mixing noise levels were low because of a facility limit on primary temperature. The mixer-ejector did significantly reduce shock noise relative to the baseline conic nozzle. Because the relative magnitudes of jet mixing noise and shock noise were not in the correct proportion to properly model engine noise, an Effective Perceived Noise Level (EPNL) assessment was precluded.
The development of submicron area mixer elements for operation in the submillimeter wave range is discussed. High-current-density NbN/MgO/NbN tunnel junctions with areas down to 0.1 sq microns have been fabricated in both planar and edge geometries. The planar junctions were fabricated from in situ deposited trilayers using electron-beam lithography to pattern submicron area mesas. Modifications of fabrication techniques used in larger-area NbN tunnel junctions are required and are discussed. The NbN/MgO/NbN edge junction process using sapphire substrates has been transferred to technologically important quartz substrates using MgO buffer layers to minimize substrate interactions. The two junction geometries are compared and contrasted in the context of submillimeter wave mixer applications.
Superconducting tunnel diode (SIS) mixers are used for radio astronomy from 100 to 500 GHz. They are being considered for NASA spaceborne astronomy at frequencies near 1000 GHz. Measurements of gain and noise in SIS mixers at 230 and 492 GHz are reported. Relatively high gain and noise associated with Josephson currents are measured that have not been previously reported. These measurements show that Josephson currents are increasingly important as operating frequencies are raised. The techniques used to make these measurements are discussed. Measurements made with hot and cold black-bodies are shown to be inaccurate at high frequencies.
Over the last few years, considerable progress have been made in the development of techniques for fabricating high-quality superconducting circuits, and this success, together with major advances in the theoretical understanding of quantum detection and mixing at millimeter and submillimeter wavelengths, has made the development of CAD techniques for superconducting nonlinear circuits an important new enterprise. For example, arrays of quasioptical mixers are now being manufactured, where the antennas, matching networks, filters and superconducting tunnel junctions are all fabricated by depositing niobium and a variety of oxides on a single quartz substrate. There are no adjustable tuning elements on these integrated circuits, and therefore, one must be able to predict their electrical behavior precisely. This requirement, together with a general interest in the generic behavior of devices such as direct detectors and harmonic mixers, has lead us to develop a range of CAD tools for simulating the large-signal, small-signal, and noise behavior of superconducting tunnel junction circuits.
The Planar Doped Barrier (PDB) diode is a device consisting of a p(+) doping spike between two intrinsic layers and n(+) ohmic contacts. This device has the advantages of controllable barrier height, diode capacitance and forward to reverse current ratio. A symmetrically designed PDB has an anti-symmetric current vs. voltage characteristic and is ideal for use as millimeter wave subharmonic mixers. We have fabricated such devices with barrier heights of 0.3, 0.5 and 0.7 volts from GaAs and InGaAs using a multijunction honeycomb structure with junction diameters between one and ten microns. Initial RF measurements are encouraging. The 0.7 volt barrier height 4 micron GaAs devices were tested as subharmonic mixers at 202 GHz with an IF frequency of 1 GHz and had 18 dB of conversion loss. The estimated mismatch loss was 7 dB and was due to higher diode capacitance. The LO frequency was 100.5 GHz and the pump power was 8 mW.
Near-ideal GaAs Schottky barrier diodes especially designed for mixing applications in the THz frequency range are presented. A diode fabrication process for submicron diodes with near-ideal electrical and noise characteristics is described. This process is based on the electrolytic pulse etching of GaAs in combination with an in-situ platinum plating for the formation of the Schottky contacts. Schottky barrier diodes with a diameter of 1 micron fabricated by the process have already shown excellent results in a 650 GHz waveguide mixer at room temperature. A conversion loss of 7.5 dB and a mixer noise temperature of less than 2000 K have been obtained at an intermediate frequency of 4 GHz. The optimization of the diode structure and the technology was possible due to the development of a generalized Schottky barrier diode model which is valid also at high current densities. The common diode design and optimization is discussed on the basis of the classical theory. However, the conventional fomulas are valid only in a limited forward bias range corresponding to currents much smaller than the operating currents under submillimeter mixing conditions. The generalized new model takes into account not only the phenomena occurring at the junction such as current dependent recombination and drift/diffusion velocities, but also mobility and electron temperature variations in the undepleted epi-layer. Calculated diode I/V and noise characteristics are in excellent agreement with the measured values. Thus, the model offers the possibility of optimizing the diode structure and predicting the diode performance under mixing conditions at THz frequencies.
Experimental characteristics of monolithic InAlAs/InGaAs HEMT mixers are presented together with a theoretical analysis. Experiments at W-band show a maximum conversion gain of 0.9 dB with 2 dBm of LO power level. This is the first demonstration of a monolithic HEMT mixer with conversion gain at W-band. The conversion gain dependence on LO power, RF frequency and gate bias is measured and compared with the theoretical predictions. Good agreement between the theory and experiment could be found.
We have determined that the multi-pin 'microprocessor style' packages in which current Blocked Impurity Band (BIB) devices are mounted will not meet our IF bandwidth spec of greater than 2 GHz for a practical mixer. Hence we have started to repackage the Ga:Ge BIB devices in new microwave compatible packages. The smaller size of the microwave package mount necessitates cutting the BIB array down to include only the 3 smallest detectors: 0.2, 0.4, and 0.6 mm sq. A FIR beam incident at f/1.5 can be focussed on the smallest element for wavelengths shorter than 100 microns. A more typical (easier) beam convergence of f/3 will require 0.4 mm elements at 100 microns and 0.6 mm elements at 170 microns wavelength. Since the device capacitance (parasitic loss) scales with detector size, there is a tradeoff of speed of response and optical convenience. Our existing optics produce only the slower convergence beam, so we need to redesign the optical layout and are looking at long focal length all-reflective microscope objectives. BIB detectors and the edge-coupled microbolometers have restricted IF bandwidths, an order of magnitude less than what is possible with the Schottky-diode mixers we currently use for astronomical observations. Consequently the frequencies of the FIR laser lines must be close to the astronomical line of interest to be an effective Local Oscillator (LO). We have therefore begun a coordinated effort to discover and measure new FIR laser transition lines in close frequency coincidence with important astrophysical lines. Most of this effort involves pumping isotopic variants of known good laser molecules with laser lines from isotopic variants of CO2. We have been most successful in detecting new FIR lines in deuterated ammonia. One line in particular is very close to the frequency of HD rotational line at 2675 GHz.
The present invention generally relates to providing an improved jet mixer noise suppressor for high speed jets that rapidly mixes high speed air flow with a lower speed air flow, and more particularly, relates to an improved jet mixer noise suppressor that uses feedback of acoustic waves produced by the interaction of shear flow instability waves with an obstacle downstream of the jet nozzle.
A laser Doppler velocimeter (LDV) system developed for the Aeroacoustic Propulsion Laboratory (APL) at the NASA Lewis Research Center is described. This system was developed to acquire detailed flow field data which could be used to quantify the effectiveness of internal exhaust gas mixers (IEGM's) and to verify and calibrate computational codes. The LDV was used as an orthogonal, three component system to measure the flow field downstream of the exit of a series of IEGM's and a reference axisymmetric splitter configuration. The LDV system was also used as a one component system to measure the internal axial flow within the nozzle tailpipe downstream of the mixers. These IEGM's were designed for low-bypass ratio turbofan engines. The data were obtained at a simulated low flight speed, high-power operating condition. The optical, seeding, and data acquisition systems of the LDV are described in detail. Sample flow field measurements are provided to illustrate the capabilities of the system at the time of this test, which represented the first use of LDV at the APL. A discussion of planned improvements to the LDV is also included.
A heterodyne mixer with a micromachined horn antenna and a superconductor-insulator- superconductor (SIS) tunnel junction as mixing element is tested in the W-band (75-115 GHz) frequency range. Micromachined integrated horn antennas consist of a dipole antenna suspended on a thin Si(3)N(4) dielectric membrane inside a pyramidal cavity etched in silicon. The mixer performance is optimized by using a backing plane behind the dipole antenna to tune out the capacitance of the tunnel junction. The lowest receiver noise temperature of 30 +/- 3 K (without any correction) is measured at 106 GHz with a 3-dB bandwidth of 8 GHz. This sensitivity is comparable to the state-of-the-art waveguide and quasi-optical SIS receivers, showing the potential use of micromachined horn antennas in imaging arrays.
The jet mixing noise from two fan/core mixer nozzles is studied. Acoustic data from two fan/core mixer nozzles are analyzed to determine the properties of the noise signatures. It was assumed that there were three major contributors to the total noise signature: noise from mixing of the fan and core streams internal to the nozzle; noise from residual mixing of the fan and core streams external to the nozzle; and the noise associated with the fully mixed jet. In general, the low frequency portion of the noise spectra can be associated with the fully mixed jet and can be predicted using an empirical correlation for single round nozzle jet noise. The properties of the noise in excess of the fully mixed levels are studied.