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At least 163 records · Page 9

Factors which influence the behavior of turbofan forced mixer nozzles

A finite difference procedure was used to compute the mixing for three experimentally tested mixer geometries. Good agreement was obtained between analysis and experiment when the mechanisms responsible for secondary flow generation were properly modeled. Vorticity generation due to flow turning and vorticity generated within the centerbody lobe passage were found to be important. Results are presented for two different temperature ratios between fan and core streams and for two different free stream turbulence levels. It was concluded that the dominant mechanisms in turbofan mixers is associated with the secondary flows arising within the lobe region and their development within the mixing section.

Anderson, B. H.↗

QCGAT mixer compound exhaust system design and static big model test report

A mixer exhaust system was designed to meet the proposed performance and exhaust jet noise goals for the AiResearch QCGAT engine. Some 0.35 scale models of the various nozzles were fabricated and aerodynamically and acoustically tested. Preliminary optimization, engine cycle matching, model test data and analysis are presented. A final mixer exhaust system is selected for optimum performance for the overall flight regime.

Blackmore, W. L.↗

Factors which influence the behavior of turbofan forced mixer nozzles

A finite difference procedure was used to compute the mixing for three experimentally tested mixer geometries. Good agreement was obtained between analysis and experiment when the mechanisms responsible for secondary flow generation were properly modeled. Vorticity generation due to flow turning and vorticity generated within the centerbody-lobe passage were found to be important. Results are presented for two different temperature ratios between fan and core streams and for two different free-stream turbulence levels. It was concluded that the dominant mechanisms in turbofan mixers is associated with the secondary flows arising within the lobe region and their development within the mixing section.

Anderson, B. H.↗

The design and development of a mixer compound exhaust system for a quiet clean general aviation turbofan

Lower engine fuel consumption has become a dominant factor in turbofan engine design due to rapidly increasing fuel costs. One engine component with a large impact on engine performance is the exhaust system. Previous exhaust system studies have demonstrated the significant exhaust system efficiency gains available through mixing of the core and bypass flows. Typically, a large, costly rig and engine program are required to develop and optimize these gains. The purpose of this paper is to present the results of the low-cost design system used for the quiet, clean general aviation turbofan mixer nozzle design and development. The scale model and full-scale engine test results confirm the predicted 3 to 5% reduction in cruise fuel consumption. This unique design system, which is based on integrating advanced three-dimensional viscous numerical methods with empirical optimization techniques, is summarized and detailed comparisons with test data are presented. The ability to accurately predict relative performance of mixer systems with substantially reduced development time and cost savings is demonstrated.

Blackmore, W. L.↗

Three-dimensional compressible viscous analysis of mixer nozzles

An analysis-based design procedure for compound-mixer exhaust nozzles is presented and compared to test data. The design approach is based on two numerical solutions to the 3-D viscous compressible Navier-Stokes equations: an equation splitting technique used for the analysis of the core and bypass flow, and a parabolic marching scheme used in the analysis of the mixing duct. The selection of the analytical methods through test data comparisons and their coupling into an integrated design system are discussed. NASA test data is used to demonstrate the validity of the computations from the exhaust system rating station, upstream of the mixer lobe, to the nozzle throat. An estimate is made of the savings in development time and cost utilizing the new procedure.

Goyal, R. K.↗

Image-optimized, frequency-scalable mixers for millimeter-wave applications

A unique IF measurement procedure for evaluating mixer performance and identifying optimum circuit boundary conditions is presented. The technique is applied to a scalable mm-wave single-sideband (image-sum enhanced) mixer design which provides 3.5 to 5 dB typical conversion loss from conventional, packaged devices.

Peterson, D. F.↗

High-speed Digital Baseband Mixer

The feasibility of designing a digital, complex, baseband mixer with a 50 MHz sampling rate is explored. The baseband filter must provide passbands with linear phase response to minimize intersymbol interference. The effects of signal quantization, filter coefficient quantization, dynamic range, filter response characteristics, and the performance of the mixer when used for cross correlation and autocorrelation pulse detection techniques are discussed. This filter was designed for use in the high speed data acquisition system (HSDAS), an advanced experimental system in the Deep Space Network.

Chan, F. P.↗

Waveguide submillimeter mixers

A waveguide Schottky barrier diode mixer, which in preliminary tests has yielded a single sideband receiver noise temperature of 4300 K at 692 GHz, when cooled to 77 K is presented. Further refinements and operation at 20 K should produce a significant improvement in performance. From a system point of view, the very high efficiency of the radiation pattern produced by the conical feedhorn with cylindrical corrector mirror enhances the effective sensitivity by a factor of 1.5 to 2 compared to open-structure corner-reflector systems. A second-harmonic mixer for 557 GHz, also in the fundamental mode rectangular waveguide was developed. When combined with a frequency-tripled Gunn oscillator, this makes an extremely compact and lightweight submillimeter radiometer.

Goldsmith, Paul F.↗

30 GHz monolithic balanced mixers using an ion-implanted FET-compatible 3-inch GaAs wafer process technology

An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated and tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.

Bauhahn, P.↗

A millimeter wave Josephson mixer employing a high-T(c) GdBaCuO point contact

A Josephson effect heterodyne mixer for the millimeter wave band was investigated employing high-T(c) GdBaCuO point contacts. Mixer performance was in qualitative agreement with theory. A mixing response was observed up to 55 K, the highest operating temperature achieved for such a device to date. The voltage separation of RF-induced steps gave a value of h/2e = 2.08 x 10 to the -15th V s, which is in excellent agreement with the value expected for Cooper pairs. In addition, the temperature dependence of the I(0)R product was found to agree with Bardeen-Cooper-Schrieffer theory in the weak coupling limit.

Olsson, H. K.↗

Mixer-ejector nozzle for jet noise suppression

An aero/acoustic model test of a mixer-ejector nozzle was conducted at the 9 x 15 foot low-speed acoustic wind tunnel at NASA Lewis Research Center. The objective of the test was to get a preliminary assessment of ejector pumping and noise reduction potential of this device for possible application in the exhaust system of an advanced supersonic civil transport. The results of the test showed that goal levels of pumping were achieved. Exit pressure/temperature traverse data showed that there was good mixing between the primary and secondary streams. Acoustics data were dominated by shock noise; jet mixing noise levels were low because of a facility limit on primary temperature. The mixer-ejector did significantly reduce shock noise relative to the baseline conic nozzle. Because the relative magnitudes of jet mixing noise and shock noise were not in the correct proportion to properly model engine noise, an Effective Perceived Noise Level (EPNL) assessment was precluded.

Lord, W. K.↗

Submicron area NbN/MgO/NbN tunnel junctions for SIS mixer applications

The development of submicron area mixer elements for operation in the submillimeter wave range is discussed. High-current-density NbN/MgO/NbN tunnel junctions with areas down to 0.1 sq microns have been fabricated in both planar and edge geometries. The planar junctions were fabricated from in situ deposited trilayers using electron-beam lithography to pattern submicron area mesas. Modifications of fabrication techniques used in larger-area NbN tunnel junctions are required and are discussed. The NbN/MgO/NbN edge junction process using sapphire substrates has been transferred to technologically important quartz substrates using MgO buffer layers to minimize substrate interactions. The two junction geometries are compared and contrasted in the context of submillimeter wave mixer applications.

Leduc, H. G.↗

Josephson effect gain and noise in SIS mixers

Superconducting tunnel diode (SIS) mixers are used for radio astronomy from 100 to 500 GHz. They are being considered for NASA spaceborne astronomy at frequencies near 1000 GHz. Measurements of gain and noise in SIS mixers at 230 and 492 GHz are reported. Relatively high gain and noise associated with Josephson currents are measured that have not been previously reported. These measurements show that Josephson currents are increasingly important as operating frequencies are raised. The techniques used to make these measurements are discussed. Measurements made with hot and cold black-bodies are shown to be inaccurate at high frequencies.

Wengler, Michael J.↗

Recent advances in superconducting-mixer simulations

Over the last few years, considerable progress have been made in the development of techniques for fabricating high-quality superconducting circuits, and this success, together with major advances in the theoretical understanding of quantum detection and mixing at millimeter and submillimeter wavelengths, has made the development of CAD techniques for superconducting nonlinear circuits an important new enterprise. For example, arrays of quasioptical mixers are now being manufactured, where the antennas, matching networks, filters and superconducting tunnel junctions are all fabricated by depositing niobium and a variety of oxides on a single quartz substrate. There are no adjustable tuning elements on these integrated circuits, and therefore, one must be able to predict their electrical behavior precisely. This requirement, together with a general interest in the generic behavior of devices such as direct detectors and harmonic mixers, has lead us to develop a range of CAD tools for simulating the large-signal, small-signal, and noise behavior of superconducting tunnel junction circuits.

Withington, S.↗

Planar doped barrier subharmonic mixers

The Planar Doped Barrier (PDB) diode is a device consisting of a p(+) doping spike between two intrinsic layers and n(+) ohmic contacts. This device has the advantages of controllable barrier height, diode capacitance and forward to reverse current ratio. A symmetrically designed PDB has an anti-symmetric current vs. voltage characteristic and is ideal for use as millimeter wave subharmonic mixers. We have fabricated such devices with barrier heights of 0.3, 0.5 and 0.7 volts from GaAs and InGaAs using a multijunction honeycomb structure with junction diameters between one and ten microns. Initial RF measurements are encouraging. The 0.7 volt barrier height 4 micron GaAs devices were tested as subharmonic mixers at 202 GHz with an IF frequency of 1 GHz and had 18 dB of conversion loss. The estimated mismatch loss was 7 dB and was due to higher diode capacitance. The LO frequency was 100.5 GHz and the pump power was 8 mW.

Lee, T. H.↗

New approach to the design of Schottky barrier diodes for THz mixers

Near-ideal GaAs Schottky barrier diodes especially designed for mixing applications in the THz frequency range are presented. A diode fabrication process for submicron diodes with near-ideal electrical and noise characteristics is described. This process is based on the electrolytic pulse etching of GaAs in combination with an in-situ platinum plating for the formation of the Schottky contacts. Schottky barrier diodes with a diameter of 1 micron fabricated by the process have already shown excellent results in a 650 GHz waveguide mixer at room temperature. A conversion loss of 7.5 dB and a mixer noise temperature of less than 2000 K have been obtained at an intermediate frequency of 4 GHz. The optimization of the diode structure and the technology was possible due to the development of a generalized Schottky barrier diode model which is valid also at high current densities. The common diode design and optimization is discussed on the basis of the classical theory. However, the conventional fomulas are valid only in a limited forward bias range corresponding to currents much smaller than the operating currents under submillimeter mixing conditions. The generalized new model takes into account not only the phenomena occurring at the junction such as current dependent recombination and drift/diffusion velocities, but also mobility and electron temperature variations in the undepleted epi-layer. Calculated diode I/V and noise characteristics are in excellent agreement with the measured values. Thus, the model offers the possibility of optimizing the diode structure and predicting the diode performance under mixing conditions at THz frequencies.

Jelenski, A.↗

Experimental characteristics and performance analysis of monolithic InP-based HEMT mixers at W-band

Experimental characteristics of monolithic InAlAs/InGaAs HEMT mixers are presented together with a theoretical analysis. Experiments at W-band show a maximum conversion gain of 0.9 dB with 2 dBm of LO power level. This is the first demonstration of a monolithic HEMT mixer with conversion gain at W-band. The conversion gain dependence on LO power, RF frequency and gate bias is measured and compared with the theoretical predictions. Good agreement between the theory and experiment could be found.

Kwon, Youngwoo↗