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Results for “Nanofabrication”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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157 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Temperature-dependent collective magnetization reversal in a network of ferromagnetic nanowires

The collective behavior of geometrically frustrated magnetization in connected networks of ferromagnetic nanowires, known as artificial spin ice, leads to complex magnetotransport behavior in those structures. Here, we present temperature- and current-dependent magnetotransport studies on a connected square artificial spin-ice system and correlate our observations to micromagnetic simulations. We find that the field at which the lattice magnetization collectively switches increases as the temperature is lowered. Our experimental findings highlight the importance of the global and local temperatures for the onset of a collective magnetization reversal in the connected system. These studies may also provide useful insights into novel storage concepts and applications in neuromorphic computing.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Nanometer-thick ultraflat cantilever resonators

Nanomechanical devices made from ultrathin materials are transforming diverse fields, including sensing, signal processing, and quantum technologies. However, as these materials become thinner, their low bending rigidity poses significant fabrication challenges, and achieving nanometer-thick flat cantilevers with consistent and predictable mechanical responses has remained elusive despite decades of research. Here we present nanometer-thick, ultraflat cantilever resonators fabricated using atomic layer deposition. By effectively mitigating the effects of uncontrollable built-in strain and geometric disorder, the ultraflat nanocantilevers exhibit resonance frequencies closely aligned with thin-plate theory predictions and display low sample-to-sample variability. These cantilevers maintain mechanical stability in both vacuum and air environments, even at large length-to-thickness ratios of up to 3000. The ultraflat nanocantilevers are approaching the thickness limit, beyond which thermal fluctuations at room temperature can spontaneously induce random ripples in otherwise flat films.

nanofabrication↗
DOE OSTI2020

Fabrication of field-effect transistors with transfer-free nanostructured carbon as semiconducting channel material

Carbon nanostructures as active channel material in field effect transistors (FETs) are appealing in microelectronics for their improved performance such as high speed and low energy dissipation. However, these devices require the incorporation of nanostructure transfer steps in the fabrication process flow, which makes difficult its application in large scale integration circuits. Here we present a novel method for the fabrication of FETs with nanostructured carbon in the channel with p-type semiconducting properties and intermediate drain-source current (IDS) on/off ratio. The method is based on the use of Ni nanoparticles in the source-drain gap region as seed material for the formation of carbon nanostructures in the FET channel. FETs without Ni nanoparticles in the channel showed no modulation of IDS as a function of gate voltage. The device fabrication process does not require any carbon nanostructure transfer steps since it directly forms carbon nanostructures electrically connected to the device's source and drain electrodes via electron-beam evaporation of carbon and conventional lithographic processes. Since all device fabrication steps are compatible with Si technology processes, they are capable of being further optimized following process development protocols practiced by the semiconductor industry.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Optimizing superconducting Nb film cavities by mitigating medium-field Q -slope through annealing

Niobium films are of interest in applications in various superconducting devices, such as superconducting radiofrequency cavities for particle accelerators and superconducting qubits for quantum computing. In this study, we address the persistent medium-field Q-slope issue in Nb film cavities, which, despite their high-quality factor at low RF fields, exhibit a significant Q-slope at medium RF fields compared to bulk Nb cavities. Traditional heat treatments, effective in reducing surface resistance and mitigating the Q-slope in bulk Nb cavities, are challenging for Nb-coated copper cavities. To overcome this challenge, we employed DC bias high-power impulse magnetron sputtering to deposit Nb film onto a 1.3 GHz single-cell elliptical bulk Nb cavity, followed by annealing treatments aimed at modifying the properties of the Nb film. In-situ annealing at 340 °C increased the quench field from 10.0 to 12.5 MV m −1 . Vacuum furnace annealing at 600 °C and 800 °C for 3 h resulted in a quench field increase of 13.5 and 15.3 MV m −1 , respectively. Further annealing at 800 °C for 6 h boosted the quench field to 17.5 MV m −1 . Additionally, the annealing treatments significantly reduced the field dependence of the surface resistance. However, increasing the annealing temperature to 900 °C induced a Q-switch phenomenon in the cavity. The analysis of RF performance and material characterization before and after annealing has provided critical insights into how the microstructure and impurity levels in Nb films influence the evolution of the Q-slope in Nb film cavities. Our findings highlight the significant roles of hydrides, high local misorientation, and lattice and surface defects in driving field-dependent losses. By strategically optimizing film properties and controlling impurity levels, we demonstrate a promising pathway to mitigate the medium-field Q-slope, paving the way for more efficient superconducting RF technologies.

Nb film↗
DOE OSTI2022

Fabrication of ultrathin suspended membranes from atomic layer deposition films

In this report, ultrathin films suspended as freestanding membranes are critical to many microelectronic and materials science applications. However, fabrication methods are currently limited in either their flexibility, due to material selectivity issues during the final membrane release, or their scalability. Here, we demonstrate a novel fabrication process for suspending ultrathin films with thicknesses as low as 4 nm and lateral dimensions up to 20 x 1000 μm from a variety of materials grown by atomic layer deposition. A silicon nitride membrane serves as the support for a sacrificial polymer layer and an ultrathin atomic layer deposition film which, after plasma etching, will form the membrane. The high chemical selectivity between atomic layer deposition-grown transition metal nitrides and oxides and the sacrificial polymer means that ultrathin films of a variety of materials can be released without damage using a single process. Electrically conductive titanium nitride membranes can be produced by this method and are of significant interest for electron microscopy applications. Electron transparency of titanium nitride membranes was found to be ~14% higher than silicon nitride of the same thickness, and of similar conductivity to graphite, meaning that ultrathin, conductive, and electron transparent membranes can be fabricated at scale. These membranes are ideal supports for electron and photon characterization techniques, as well as microelectromechanical system applications that require a conductive membrane.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Operando XPS in reactive plasmas: The importance of the wall reactions

In this article, advancements in differential pumping and electron optics over the past few decades have enabled x-ray photoelectron spectroscopy (XPS) measurements at (near-)ambient pressures, bridging the pressure gap for characterizing realistic sample chemistries. Recently, we have demonstrated the capabilities of an ambient pressure XPS setup for in situ plasma environment measurements, allowing plasma-surface interactions to be studied in operando rather than using the traditional before-and-after analysis approach. This new “plasma-XPS” technique facilitates the identification of reaction intermediates critical for understanding plasma-assisted surface processes relevant to semiconductor nanomanufacturing, such as physical vapor deposition, etching, atomic layer deposition, and many other plasma applications. In this paper, we apply the plasma-XPS approach to monitor real-time surface chemical changes on a model Ag(111) single crystal exposed to oxidizing and reducing plasmas. We correlate surface-sensitive data with concurrent gas-phase XPS measurements and residual gas mass-spectrum analysis of species generated during plasma exposure, highlighting the significant role of plasma-induced chamber wall reactions. Ultimately, we demonstrate that plasma-XPS provides comprehensive insights into both surface and gas-phase chemistry, establishing it as a versatile and dynamic characterization tool with broad applications in microelectronics research. Finally, we outline potential enhancements and future metrology directions to advance plasma-XPS investigations further.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Review of metal-containing resists in electron beam lithography: perspectives for extreme ultraviolet patterning

Background: Metal-containing resists entered the mainstream semiconductor industry process flow to mitigate the low absorbance of extreme ultraviolet (EUV) radiation by thin films of organic resists that lead to poor sensitivity and their inability to handle rigors of development and etching conditions. Aim: The long and rich history of using metal-containing resists in electron beam lithography can offer interesting lessons, pointers, and insights to the relatively newcomer EUV lithography, which is slightly over a decade old. Approach: Electron beam lithography has been enjoying a considerable amount of freedom in the choice of resist materials for close to 50 years; especially the use of metal-containing resists to attain not only single digit nanometer resolution, higher sensitivity, and etch resistance but also lower line-edge roughness. Here, we make a comprehensive historical review of the progress made in the patterning of metal-containing resists in electron beam lithography and derive insights that can be potentially useful in EUV patterning. Perspectives: Small molecular weight resists are proven to be crucial for achieving higher resolution with low line-edge roughness. Simplifying process flow by reducing etch-stack-layers is conceivable with metal-containing resists, along with direct-patterning of functional materials for heterogeneous integration. Efficient contact hole patterning at tighter pitches may be incumbent on progress in positive-tone resist research.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

A universal metasurface transfer technique for heterogeneous integration

Metasurfaces offer a versatile platform for engineering the wavefront of light using nanostructures with subwavelength dimensions and hold great promise for dramatically miniaturizing conventional optical elements due to their small footprint and broad functionality. However, metasurfaces so far have been mainly demonstrated on bulky and planar substrates that are often orders of magnitude thicker than the metasurface itself. Conventional substrates not only nullify the reduced footprint advantage of metasurfaces, but also limit their application scenarios. The bulk substrate also determines the metasurface dielectric environment, with potentially undesired optical effects that undermine the optical performance. Here we develop a universal polymer-assisted transfer technique to tackle this challenge by decoupling the substrate employed on the fabrication of metasurfaces from that used for the target application. As an example, Huygens’ metasurfaces with 120 nm thickness in the visible range (532 nm) are demonstrated to be transferred onto a 100 nm thick freestanding SiN x membrane while maintaining excellent structural integrity and optical performance of diffraction-limited focusing. This transfer method not only enables the thinnest dielectric metalens to the best of our knowledge, but also opens up new opportunities in integrating cascaded and multilayer metasurfaces, as well as the heterogeneous integration with nonconventional substrates and various electronic/photonic devices.

42 ENGINEERING↗
DOE OSTI2023

Multiport High-pressure Fluid Cell (MHPFC) for Photon and Electron Beams

A multiport high-pressure fluid cell was developed based on an engineered thin film membrane solution with a reinforced frame of boron-doped silicon, optimized to withstand better pressure with an increase of 17.6% in average burst pressure over similar membranes without frame. The novel cells (patent pending) have 8 microfluidic ports, two intra-cavity electrodes and two pressure sensors on a 8 mm x 8 mm Si chip. The prototypes resisted up to 60 bar with 50-nm-thick silicon nitride membranes of size 70 nm x 70 nm. The cells can be used for testing reactions in fluids in medium-high pressure (up to 300 bar) using X-rays (primary application), electron beams, IR or visible light. Improvements in the pressure sensing setup and customization for applications are supposed to follow.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Nanomanufacturing of Nanophononic Devices: Ultra-high ZT Thermoelectrics for Efficient Conversion of Waste Heat

Fabrication and Characterization Summary: For this program, the team fabricated and tested silicon thermoelectric test structures that experimentally demonstrated record thermal conductivity reduction (> 85 %) without changes in electrical properties (conductivity and Seebeck coefficient). We also demonstrated the highest ever reported energy conversion efficiency for silicon thermoelectric devices. The team developed a design for 1 cm 2 die with thousands of nanophononic metamaterial structures in the form of nanowalled membranes but were unable to solve all fabrication challenges before the end of the program. Multiple aspects of the design were submitted for patent protection. Primary challenges were related to silicon-on-insulator material quality and high-aspect-ratio etching.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2023

Enhanced Photoluminescence and Prolonged Carrier Lifetime through Laser Radiation Hardening and Self-Healing in Aged MAPbBr3 Perovskites Encapsulated in NiO Nanotubes

Organic-inorganic perovskites hold great promise as optoelectronic semiconductors for pure color light emitting and photovoltaic devices. However, challenges persist regarding their photostability and chemical stability, which limit their extensive applications. This paper investigates the laser radiation hardening and self-healing-induced properties of aged MAPbBr3 perovskites encapsulated in NiO nanotubes (MAPbBr3@NiO) using photoluminescence (PL) and fluorescence lifetime imaging (FLIM). After deliberately subjecting the MAPbBr3@ NiO to atmospheric conditions for two years, the sample remains remarkably stable. It exhibits no changes in PL wavelength during UV laser irradiation and self-healing. Furthermore, exposure to UV light at 375 nm enhances the PL of the self-healed MAPbBr3@NiO. FLIM analysis sheds light on the mechanism behind photodegradation, self-healing, and PL enhancement. The results indicate the involvement of many carrier-trapping states with low lifetime events and an increase in peak lifetime after self-healing. The formation of trapping states at the perovskite/nanotube interface is discussed and tested. This study provides new insights into the dynamics of photo-carriers during photodegradation and self-healing in organic-inorganic perovskites.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Reactive Oxygen Ion Beam-Induced Deposition for Concurrent Purification of Platinum Nanostructures

Oxygen-focused ion beam induced deposition (O-FIBID) enables the direct-write fabrication of Pt nanostructures while simultaneously enhancing purity concurrently through reactive oxygen–deposit interactions. By systematically varying the dwell time, accelerating voltage, and precursor pressure, the Pt content and conductivity can be controlled. Under optimum conditions, the Pt content reached 63 at.%. Across the dwell-time range used for resistivity measurements, the Pt content increased from 20 to 33 at.%, while the resistivity decreased from 2.9 × 10 4 μΩ·cm to 1.2 × 10 3 μΩ·cm, which is consistent with enhanced percolation through Pt grains and the lower intrinsic resistivity of the purer Pt deposit. The simulation results support a purification mechanism driven by the beam-induced activation of implanted oxygen balanced against the preferential sputtering of Pt. These results demonstrate O-FIBID as a viable method for the nanoscale direct write of conductive Pt without post-processing, and some deviations from conventional FIBID wisdom are observed. These results serve as a foundation for exploring nascent, reactive focused ion beam-induced deposition processes.

deposit purification↗